EP1496554A3

Organic thin film transistor and method of manufacturing the same

Abstract

The invention seeks to provide an organic thin film transistor whose threshold voltage can be easily controlled without changing the material forming an organic semiconductor film, and a method of manufacturing the same. An organic thin film transistor includes a gate electrode 12, a gate insulating film 14, a source electrode 16, a drain electrode 18, and an organic semiconductor film 20, and has a threshold voltage controlling film 22 between the gate insulating film 14 and the organic semiconductor film 20.

EP1496554A3, drawing sheet 1
Sheet 1 of 1

Term

Term ended

Projected expiry passed 6 July 2024, 2.2 years ago.

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1 sheet

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