EP1496551A3

Semiconductor light emitting device and method of manufacturing the same

Abstract

There are provided a light emitting device that is capable of achieving a high-electric power and high-optical power device, a method of manufacturing the same, as well as a highly reliable lighting equipment thanks to improved heat release capability. In a light emitting device with a heat-release metallic part 5 made of metal and a packaging ceramic part 1 made of ceramics bonded to the metallic part 5 via an adhesive, the adhesive is a hot melt 6 that melts with heat at a melting temperature higher than a given temperature and has flexibility when it has been hardened and formed a bond, and the ceramic part 1 has pores h at least in a given bonding surface region so that the hot melt 6 is impregnated into the pores h.

EP1496551A3, drawing sheet 1 — Sheet 1 of 1

Term

Term ended

Projected expiry passed 8 July 2024, 2.2 years ago.

1 sheet

Sheet 1

Every citation, both ways

Citations
Document	Relation	Office	Category	Cited during	Relevant claims
US2002175621A1	Cites	United States of America	A	Search report	6,17
US5742007A	Cites	United States of America	Y	Search report	1-10,15-20
US6051652A	Cites	United States of America	A	Search report	1
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 15 6 April 2001 (2001-04-06)	Non-patent	–	–	Search report	–
PATENT ABSTRACTS OF JAPAN vol. 006, no. 180 (C - 125) 14 September 1982 (1982-09-14)	Non-patent	–	–	Search report	–

13 members in 4 offices; this record represents the family

This recordMember, by publication datePriority claim

Priority claims4

Priority claims
Document	Office	Kind	Date
2003272307	Japan	–	2003-07-09
2003272307	Japan	A	2003-07-09
2003357944	Japan	–	2003-10-17
2003357944	Japan	A	2003-10-17

Members13

Family members, oldest first
Document	Office	Kind
EP1496551A2	European Patent Office (EPO)	A2	2005-01-12
US2005007783A1	United States of America	A1	2005-01-13
CN1577907A	China	A	2005-02-09
JP2005044777A	Japan	A	2005-02-17
JP2005123457A	Japan	A	2005-05-12
EP1496551A3This record	European Patent Office (EPO)	A3	2006-10-18
US7211835B2	United States of America	B2	2007-05-01
CN100353574C	China	C	2007-12-05
CN101097984A	China	A	2008-01-02
JP4274032B2	Japan	B2	2009-06-03
CN100541845C	China	C	2009-09-16
JP4348684B2	Japan	B2	2009-10-21
EP1496551B1	European Patent Office (EPO)	B1	2013-08-21

37 legal events, as 4 offices reported them to INPADOC

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Events

Legal events, newest first
	Event	Code	Office
2024-10-31	Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25	PG25	EP
2024-10-14	Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25	PG25	EP
2024-07-31	Patent expired after termination of 20 yearsExpiredPE20	PE20	GB
2024-07-10	Patent expired because of reaching the maximum lifetime of a patentExpiredMK	MK	NL
2024-07-08	Expiry of rightR071	R071	DE
2023-11-30	Annual fee paid to national office [announced via postgrant information from national office to epo]GrantedPGFP	PGFP	EP
2023-10-31	Annual fee paid to national office [announced via postgrant information from national office to epo]GrantedPGFP	PGFP	EP
2023-07-31	Annual fee paid to national office [announced via postgrant information from national office to epo]GrantedPGFP	PGFP	EP
2023-06-28	Opt-out of the competence of the unified patent court (upc) registeredP01	P01	EP
2014-09-04	No opposition filed against granted patent, or epo opposition proceedings concluded without decisionGrantedR097	R097	DE
2014-07-30	No opposition filedOpposition26N	26N	EP
2014-06-27	No opposition filed within time limitOppositionORIGINAL CODE: 0009261PLBE	PLBE	EP
2014-06-27	Information on the status of an ep patent application or granted ep patentGrantedSTATUS: NO OPPOSITION FILED WITHIN TIME LIMITSTAA	STAA	EP
2013-12-11	Translation filed for an european patent granted for nl, confirming art. 52 par. 1 or 6 of the patents act 1995GrantedT3	T3	NL
2013-10-17	Dpma publication of mentioned ep patent grantGrantedR096	R096	DE
2013-08-21	Designated contracting statesAK	AK	EP
2013-08-21	European patent grantedGrantedFG4D	FG4D	GB
2013-07-19	(expected) grantORIGINAL CODE: 0009210GRAA	GRAA	EP
2013-06-07	Grant fee paidORIGINAL CODE: EPIDOSNIGR3GRAS	GRAS	EP
2013-05-08	Information on inventor provided before grant (corrected)RIN1	RIN1	EP
2013-03-06	Information provided on ipc code assigned before grantRIC1	RIC1	EP
2013-03-06	Information provided on ipc code assigned before grantRIC1	RIC1	EP
2013-03-06	Information provided on ipc code assigned before grantRIC1	RIC1	EP
2013-03-06	Information provided on ipc code assigned before grantRIC1	RIC1	EP
2013-03-06	Information provided on ipc code assigned before grantRIC1	RIC1	EP
2013-03-06	Information provided on ipc code assigned before grantRIC1	RIC1	EP
2013-03-01	Despatch of communication of intention to grant a patentORIGINAL CODE: EPIDOSNIGR1GRAP	GRAP	EP
2013-01-25	Amendment of ipc main classPREVIOUS MAIN CLASS: H01L0033000000R079	R079	DE
2007-06-27	Designation fees paidAKX	AKX	EP
2007-06-20	First examination report despatched17Q	17Q	EP
2007-02-21	Request for examination filed17P	17P	EP
2006-10-18	Designated contracting statesAK	AK	EP
2006-10-18	Request for extension of the european patentAX	AX	EP
2006-09-15	Search report despatchedORIGINAL CODE: 0009013PUAL	PUAL	EP
2005-01-12	Designated contracting statesAK	AK	EP
2005-01-12	Request for extension of the european patentAX	AX	EP
2004-11-26	Public reference made under article 153(3) epc to a published international application that has entered the european phaseORIGINAL CODE: 0009012PUAI	PUAI	EP

Semiconductor light emitting device and method of manufacturing the same

Abstract

Term

Priority claims4

Members13

Over the term

Events

Numbers

Titles3

Classification

Designated states2