EP1247876A3
Method for manufacturing a semiconductor device
Abstract
The present invention relates to a manufacturing method of a semiconductor device on which a barrier insulating film that coats a wiring, particularly a copper wiring, is formed. The configuration of the method includes the steps of: transforming film forming gas containing tetraethoxysilane (TEOS) and nitrogen monoxide (N2O) into plasma to cause reaction; and forming a barrier insulating film 35a, 39 that coats a copper wiring 34, 38 on a substrate 31 where the copper wiring 34, 38 is exposed on a surface thereof.
Term
Term ended
Projected expiry passed 28 March 2022, 4.5 years ago.
- Priority
- Filed
- Published
- Projected expiry
- Today
4 sheets
Sheet 1 Sheet 2 Sheet 3 Sheet 4
Every citation, both ways
| Document | Relation | Office | Category | Cited during | Relevant claims |
|---|---|---|---|---|---|
| EP0935283A2 | Cites | European Patent Office (EPO) | A | Search report | 3-6 |
| US5869394A | Cites | United States of America | Y | Search report | 1,2 |
| US6070550A | Cites | United States of America | A | Search report | 3-6 |
| US6184158B1 | Cites | United States of America | X | Search report | 1,2 |
| PATENT ABSTRACTS OF JAPAN vol. 016, no. 441 (E - 1264) 14 September 1992 (1992-09-14) | Non-patent | – | – | Search report | – |
6 members in 5 offices; this record represents the family
Priority claims2
| Document | Office | Kind | Date |
|---|---|---|---|
| 2001106689 | Japan | – | |
| 2001106689 | Japan | A |
Members6
| Document | Office | Kind | |
|---|---|---|---|
| EP1247876A2 | European Patent Office (EPO) | A2 | |
| US2002151175A1 | United States of America | A1 | |
| JP2002305242A | Japan | A | |
| KR20020079412A | Republic of Korea | A | |
| EP1247876A3This record | European Patent Office (EPO) | A3 | |
| TWI300606B | Taiwan Province of China | B |
14 legal events, as the office reported them to INPADOC
Over the term
Point at a mark for the eventEvents
| Event | Code | |
|---|---|---|
| Application deemed to be withdrawnWithdrawn18D | 18D | |
| Information on the status of an ep patent application or granted ep patentGrantedSTATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWNSTAA | STAA | |
| Designation fees paidAKX | AKX | |
| Request for examination filed17P | 17P | |
| Designated contracting statesAK | AK | |
| Request for extension of the european patentAX | AX | |
| Information provided on ipc code assigned before grantRIC1 | RIC1 | |
| Information provided on ipc code assigned before grantRIC1 | RIC1 | |
| Information provided on ipc code assigned before grantRIC1 | RIC1 | |
| Information provided on ipc code assigned before grantRIC1 | RIC1 | |
| Search report despatchedORIGINAL CODE: 0009013PUAL | PUAL | |
| Designated contracting statesAK | AK | |
| Request for extension of the european patentAL;LT;LV;MK;RO;SIAX | AX | |
| Public reference made under article 153(3) epc to a published international application that has entered the european phaseORIGINAL CODE: 0009012PUAI | PUAI |
Numbers
- Publication
- 1247876
- Application
- 20072492
Titles3
- German
- Verfahren zur Herstellung einer Halbleitervorrichtung
- English
- Method for manufacturing a semiconductor device
- French
- Procédé de fabrication d'un dispositif semiconducteur
Classification
- CPC, 3
- C23C16/30
- H10P14/60
- H10W20/077
- IPC, 4
- C23C16 30
- H10P14 692
- H10P14 694
- H10P14 60
Designated states2
- Contracting states, 1
- Türkiye
- Extension states, 1
- Slovenia