Apparatus and method for etching semiconductor wafers
Abstract
A batch-type etching device and a method, which enable a stable process with high reproducibility by preventing contamination of CVD equipment by effectively removing H2O, CH3OH or CH3COOH and byproducts adsorbing and remaining on the surface of a semiconductor wafer after etching is completed, are provided. The device comprises a reaction chamber (1), an exhaust port (5) for evacuating the air inside the reaction chamber, a wafer-supporting boat (2) for supporting at least one batch of semiconductor wafers (4) inside the reaction chamber, a gas inlet port (3) for introducing a reaction gas into the reaction chamber, and a microwave generator (11). The microwave generator is adapted to introduce microwaves into reaction chamber so that substances which adsorb and remain on the semiconductor wafers are desorbed and removed after etching is completed.

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Projected expiry passed 11 February 2022, 4.6 years ago.
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1 sheet
Sheet 1
Every citation, both ways
| Document | Relation | Office | Category | Cited during | Relevant claims |
|---|---|---|---|---|---|
| US4804431A | Cites | United States of America | X | Search report | 1,3 |
| US4910042A | Cites | United States of America | X | Search report | 1 |
| US5023056A | Cites | United States of America | XA | Search report | 1 |
| US5489362A | Cites | United States of America | A | Search report | 6 |
| US5795831A | Cites | United States of America | A | Search report | 1,6 |
| US5954911A | Cites | United States of America | A | Search report | 6 |
| WESTON D F ET AL: "HF VAPOR PHASE ETCHING (HF/VPE): PRODUCTION VIABILITY FOR SEMICONDUCTOR MANUFACTURING AND REACTION MODEL", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY, NEW YORK, NY, US, vol. 17, no. 1, 1980, pages 466 - 469, XP000575722, ISSN: 0022-5355 | Non-patent | – | – | Search report | – |
8 members in 4 offices; this record represents the family
Priority claims2
| Document | Office | Kind | Date |
|---|---|---|---|
| 2001056685 | Japan | – | |
| 2001056685 | Japan | A |
Members8
| Document | Office | Kind | |
|---|---|---|---|
| EP1237177A2 | European Patent Office (EPO) | A2 | |
| KR20020070820A | Republic of Korea | A | |
| JP2002261081A | Japan | A | |
| US2002164880A1 | United States of America | A1 | |
| US2004105671A1 | United States of America | A1 | |
| US6764572B2 | United States of America | B2 | |
| EP1237177A3This record | European Patent Office (EPO) | A3 | |
| US6914208B2 | United States of America | B2 |
11 legal events, as the office reported them to INPADOC
Over the term
Point at a mark for the eventEvents
| Event | Code | |
|---|---|---|
| Application deemed to be withdrawnWithdrawn18D | 18D | |
| Information on the status of an ep patent application or granted ep patentGrantedSTATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWNSTAA | STAA | |
| First examination report despatched17Q | 17Q | |
| Designation fees paidAKX | AKX | |
| Request for examination filed17P | 17P | |
| Designated contracting statesAK | AK | |
| Request for extension of the european patentAX | AX | |
| Search report despatchedORIGINAL CODE: 0009013PUAL | PUAL | |
| Designated contracting statesAK | AK | |
| Request for extension of the european patentAL;LT;LV;MK;RO;SIAX | AX | |
| Public reference made under article 153(3) epc to a published international application that has entered the european phaseORIGINAL CODE: 0009012PUAI | PUAI |
Numbers
- Publication
- 1237177
- Application
- 22509277
Titles3
- German
- Vorrichtung und Verfahren zum Ätzen von Halbleiterscheiben
- English
- Apparatus and method for etching semiconductor wafers
- French
- Dispositif et méthode de gravure de plaquettes semiconductrices
Classification
- CPC, 3
- H10P72/0421
- H10P50/242
- H01J37/32192
- IPC, 1
- H10P95 00
Designated states2
- Contracting states, 1
- Türkiye
- Extension states, 1
- Slovenia