EP1168437A3
Semiconductor device
Abstract
An integrated circuit device with a low stress, thin film, protective overcoat having enhanced adhesion both to polymeric materials used in packaging semiconductor devices, and within the passivating film layers, including the following sequence of materials deposited by PECVD processing: a thin film of silicon dioxide, a layer of silicon nitride, oxy-nitride or silicon carbide, and a very thin topmost layer of silicon oxide.

Term
Term ended
Projected expiry passed 22 June 2021, 5.3 years ago.
- Priority
- Filed
- Published
- Projected expiry
- Today
1 sheet
Sheet 1
Every citation, both ways
| Document | Relation | Office | Category | Cited during | Relevant claims |
|---|---|---|---|---|---|
| EP0856886A1 | Cites | European Patent Office (EPO) | X | Search report | 1,5-10,15-17 |
| US5760453A | Cites | United States of America | XA | Search report | 1,5-10,15-17 |
| US5821174A | Cites | United States of America | A | Search report | 1-17 |
10 members in 6 offices; this record represents the family
Priority claims2
| Document | Office | Kind | Date |
|---|---|---|---|
| 213300P | United States of America | – | |
| 21330000 | United States of America | P |
Members10
| Document | Office | Kind | |
|---|---|---|---|
| EP1168437A2 | European Patent Office (EPO) | A2 | |
| KR20020002446A | Republic of Korea | A | |
| CN1331492A | China | A | |
| US2002011656A1 | United States of America | A1 | |
| JP2002075981A | Japan | A | |
| TW502377B | Taiwan Province of China | B | |
| US6580170B2 | United States of America | B2 | |
| US2003205812A1 | United States of America | A1 | |
| US6787397B2 | United States of America | B2 | |
| EP1168437A3This record | European Patent Office (EPO) | A3 |
10 legal events, as the office reported them to INPADOC
Over the term
Point at a mark for the eventEvents
| Event | Code | |
|---|---|---|
| Application deemed to be withdrawnWithdrawn18D | 18D | |
| Information on the status of an ep patent application or granted ep patentGrantedSTATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWNSTAA | STAA | |
| Designation fees paidAKX | AKX | |
| Designated contracting statesAK | AK | |
| Request for extension of the european patentAX | AX | |
| Search report despatchedORIGINAL CODE: 0009013PUAL | PUAL | |
| Request for examination filed17P | 17P | |
| Designated contracting statesAK | AK | |
| Request for extension of the european patentAL;LT;LV;MK;RO;SIAX | AX | |
| Public reference made under article 153(3) epc to a published international application that has entered the european phaseORIGINAL CODE: 0009012PUAI | PUAI |
Numbers
- Publication
- 1168437
- Application
- 12024170
Titles3
- German
- Halbleitervorrichtung
- English
- Semiconductor device
- French
- Dispositif semiconduteur
Classification
- CPC, 11
- H10W74/01
- H10W74/43
- H10W74/147
- H10W74/137
- H10W72/075
- H10W72/951
- H10W72/536
- H10W72/5363
- H10W90/756
- H10W74/00
- H10W72/551
- IPC, 6
- H01L23 29
- H01L23 31
- H01L23 522
- H10P14 69
- H10P14 692
- H10W74 01
Designated states2
- Contracting states, 1
- Türkiye
- Extension states, 1
- Slovenia