EP1168426A3
Method of plasma depositing a low dielectric constant insulating film
Abstract
The present invention discloses a film forming method for forming an insulating film having a low dielectric constant. This method comprises the steps of adding at least one diluting gas of an inert gas and a nitrogen gas (N2) to a major deposition gas component consisting of siloxane and N2O, converting the resultant deposition gas into plasma, causing reaction in the plasma, and forming an insulating film 25,27, or 28 on a substrate targeted for film formation.
Term
Term ended
Projected expiry passed 8 June 2021, 5.3 years ago.
- Priority
- Filed
- Published
- Projected expiry
- Today
1 sheet
Sheet 1
Every citation, both ways
| Document | Relation | Office | Category | Cited during | Relevant claims |
|---|---|---|---|---|---|
| EP0664560A2 | Cites | European Patent Office (EPO) | XY | Search report | 1-5,8 |
| EP1113489A2 | Cites | European Patent Office (EPO) | E | Search report | 1-10 |
| EP1148539A2 | Cites | European Patent Office (EPO) | E | Search report | 1-4,7-10 |
| DE19654737A1 | Cites | Germany | XY | Search report | 1-10 |
| WO9941423A2 | Cites | World Intellectual Property Organization (WIPO) | XY | Search report | 1-10 |
8 members in 5 offices; this record represents the family
Priority claims2
| Document | Office | Kind | Date |
|---|---|---|---|
| 2000188287 | Japan | – | |
| 2000188287 | Japan | A |
Members8
| Document | Office | Kind | |
|---|---|---|---|
| EP1168426A2 | European Patent Office (EPO) | A2 | |
| KR20020001532A | Republic of Korea | A | |
| JP2002009069A | Japan | A | |
| US2002013068A1 | United States of America | A1 | |
| EP1168426A3This record | European Patent Office (EPO) | A3 | |
| TW531835B | Taiwan Province of China | B | |
| US6645883B2 | United States of America | B2 | |
| KR20040065193A | Republic of Korea | A |
11 legal events, as the office reported them to INPADOC
Over the term
Point at a mark for the eventEvents
| Event | Code | |
|---|---|---|
| Application deemed to be withdrawnWithdrawn18D | 18D | |
| Information on the status of an ep patent application or granted ep patentGrantedSTATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWNSTAA | STAA | |
| First examination report despatched17Q | 17Q | |
| Designation fees paidAKX | AKX | |
| Request for examination filed17P | 17P | |
| Designated contracting statesAK | AK | |
| Request for extension of the european patentAL;LT;LV;MK;RO;SIAX | AX | |
| Search report despatchedORIGINAL CODE: 0009013PUAL | PUAL | |
| Designated contracting statesAK | AK | |
| Request for extension of the european patentAL;LT;LV;MK;RO;SIAX | AX | |
| Public reference made under article 153(3) epc to a published international application that has entered the european phaseORIGINAL CODE: 0009012PUAI | PUAI |
Numbers
- Publication
- 1168426
- Application
- 11129913
Titles3
- German
- Vefahren zur Plasmaabscheidung einer Isolierschicht mit niedriger Dielektrizitätskonstante
- English
- Method of plasma depositing a low dielectric constant insulating film
- French
- Méthode de dépôt par plasma d'un film isolant à constante diélectrique faible
Classification
- CPC, 4
- C23C16/401
- H10P14/6922
- H10P14/6686
- H10P14/6336
- IPC, 7
- C23C16 40
- C23C16 511
- H01L23 522
- H10P14 24
- H10P14 60
- H10P14 68
- H10P14 692
Designated states2
- Contracting states, 1
- Türkiye
- Extension states, 1
- Slovenia