EP1069659A4
Semiconductor laser and semiconductor laser module using the same
14 sheets
Sheet 1 Sheet 2 Sheet 3 Sheet 4 Sheet 5 Sheet 6 Sheet 7 Sheet 8 Sheet 9 Sheet 10 Sheet 11 Sheet 12 Sheet 13 Sheet 14
Every citation, both waysCites: the store holds 4 of 5
| Document | Relation | Office | Category | Cited during | Relevant claims |
|---|---|---|---|---|---|
| EP0800243A2 | Cites | European Patent Office (EPO) | A | Search report | 7 |
| US5189679A | Cites | United States of America | X | Search report | 1-7,16 |
| US5737474A | Cites | United States of America | X | Search report | 1-7,16 |
| EP0800243A | Cites | European Patent Office (EPO) | – | – | – |
| KAMIJOH T ET AL: "IMPROVED OPERATION CHARACTERISTICS OF LONG-WAVELENGTH LASERS USING STRAINED MQW ACTIVE LAYERS", IEEE JOURNAL OF QUANTUM ELECTRONICS, IEEE INC. NEW YORK, US, vol. 30, no. 2, 1 February 1994 (1994-02-01), pages 524 - 532, XP000449502, ISSN: 0018-9197 | Non-patent | – | – | Search report | – |
| CHEN T R: "CAVITY LENGTH DEPENDENCE OF THE WAVELENGTH OF STRAINED-LAYER INGAAS/GAAS LASERS", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 57, no. 23, 3 December 1990 (1990-12-03), pages 2402 - 2403, XP000216290, ISSN: 0003-6951 | Non-patent | – | – | Search report | – |
| See also references of WO 0046893A1 | Non-patent | – | – | Search report | – |
24 members in 6 offices
Priority claims14
| Document | Office | Kind | Date |
|---|---|---|---|
| 2647699 | Japan | A | |
| 2647699 | Japan | A | |
| 2647699 | Japan | – | |
| 12386899 | Japan | A | |
| 12386899 | Japan | A | |
| 12386899 | Japan | – | |
| 0000590 | Japan | W | |
| 0000590 | Japan | W | |
| 12386899 | – | – | – |
| 2647699 | – | – | – |
| JP0000590 | – | – | – |
| JP19990026476 | – | – | – |
| JP19990123868 | – | – | – |
| WO2000JP00590 | – | – | – |
Members24
| Document | Office | Kind | |
|---|---|---|---|
| CA2326723A1 | Canada | A1 | |
| WO0046893A1 | World Intellectual Property Organization (WIPO) | A1 | |
| EP1069659A1 | European Patent Office (EPO) | A1 | |
| CA2369507A1 | Canada | A1 | |
| WO0157976A1 | World Intellectual Property Organization (WIPO) | A1 | |
| US2001048702A1 | United States of America | A1 | |
| EP1168538A1 | European Patent Office (EPO) | A1 | |
| JP2002050828A | Japan | A | |
| JP2002118325A | Japan | A | |
| CA2370359A1 | Canada | A1 | |
| EP1233490A2 | European Patent Office (EPO) | A2 | |
| US2002136254A1 | United States of America | A1 | |
| CN1379562A | China | A | |
| JP2002374037A | Japan | A | |
| EP1069659A4This record | European Patent Office (EPO) | A4 | |
| US6567447B1 | United States of America | B1 | |
| US6614822B2 | United States of America | B2 | |
| EP1233490A3 | European Patent Office (EPO) | A3 | |
| US6870871B2 | United States of America | B2 | |
| EP1168538A4 | European Patent Office (EPO) | A4 | |
| EP1603206A2 | European Patent Office (EPO) | A2 | |
| EP1603206A3 | European Patent Office (EPO) | A3 | |
| JP2006210951A | Japan | A | |
| JP5074645B2 | Japan | B2 |
8 legal events, as the office reported them to INPADOC
Over the term
Point at a mark for the eventEvents
| Event | Code | |
|---|---|---|
| Application deemed to be withdrawnWithdrawn18D | 18D | |
| Information on the status of an ep patent application or granted ep patentGrantedSTATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWNSTAA | STAA | |
| Designated contracting states (corrected)RBV | RBV | |
| First examination report despatched17Q | 17Q | |
| Supplementary search report drawn up and despatchedA4 | A4 | |
| Request for examination filed17P | 17P | |
| Designated contracting statesAK | AK | |
| Public reference made under article 153(3) epc to a published international application that has entered the european phaseORIGINAL CODE: 0009012PUAI | PUAI |
Numbers
- Publication
- 1069659
- Publication, DOCDB
- 1069659
- Publication, EPODOC
- EP1069659
- Application
- 902073
- Application, DOCDB
- 00902073
- Application, EPODOC
- EP20000902073
Titles3
- German
- HALBLEITERLASER UND DIESE VERWENDENDE HALBLEITERLASERMODULE
- English
- SEMICONDUCTOR LASER AND SEMICONDUCTOR LASER MODULE USING THE SAME
- French
- LASER A SEMICONDUCTEUR ET MODULE DE LASER A SEMICONDUCTEUR UTILISANT LEDIT LASER
Classification
- CPC, 10
- H01S5/34
- B82Y20/00
- H01S5/02216
- H01S5/02415
- H01S5/02492
- H01S5/028
- H01S5/1039
- H01S5/146
- H01S5/3403
- H01S5/02251
- IPC, 6
- H01S5 022
- H01S5 024
- H01S5 028
- H01S5 10
- H01S5 14
- H01S5 34
Designated states1
- Contracting states, 1
- Sweden
