EP0949731A3

Nitride semiconductor laser device

Abstract

The nitride semiconductor laser device of the present invention includes: a nitride semiconductor laser diode (100); and a protective layer (20a,20b) formed on at least one facet of the nitride semiconductor laser diode. The protective layer is made of Al1-x-y-zGaxInyBzN (where 0≦x, y, z≦1 and 0≦x+y+z≦1), which is transparent to light emitted from the laser diode (100).

EP0949731A3, drawing sheet 1 — Sheet 1 of 1

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Projected expiry passed 6 April 2019, 7.5 years ago.

1 sheet

Sheet 1

Every citation, both waysCites: the store holds 1 of 2

Citations
Document	Relation	Office	Category	Cited during	Relevant claims
US5321713A	Cites	United States of America	A	Search report	1,3,5
NAKAMURA S: "RT-CW Operation of InGaN multi-quantum-well structure laser diodes", MATERIALS SCIENCE AND ENGINEERING B,CH,ELSEVIER SEQUOIA, LAUSANNE, vol. 50, no. 1-3, pages 277-284, XP004119149, ISSN: 0921-5107	Non-patent	–	–	Search report	–
PATENT ABSTRACTS OF JAPAN vol. 015, no. 482 (E - 1142) 6 December 1991 (1991-12-06)	Non-patent	–	–	Search report	–
PATENT ABSTRACTS OF JAPAN vol. 010, no. 329 (E - 452) 8 November 1986 (1986-11-08)	Non-patent	–	–	Search report	–
PATENT ABSTRACTS OF JAPAN vol. 016, no. 550 (E - 1292) 19 November 1992 (1992-11-19)	Non-patent	–	–	Search report	–
PATENT ABSTRACTS OF JAPAN vol. 018, no. 673 (E - 1647) 19 December 1994 (1994-12-19)	Non-patent	–	–	Search report	–
PATENT ABSTRACTS OF JAPAN vol. 008, no. 091 (E - 241) 26 April 1984 (1984-04-26)	Non-patent	–	–	Search report	–
PATENT ABSTRACTS OF JAPAN vol. 007, no. 186 (E - 193) 16 August 1983 (1983-08-16)	Non-patent	–	–	Search report	–
PATENT ABSTRACTS OF JAPAN vol. 1996, no. 11 29 November 1996 (1996-11-29)	Non-patent	–	–	Search report	–
PATENT ABSTRACTS OF JAPAN vol. 014, no. 374 (E - 0964) 13 August 1990 (1990-08-13)	Non-patent	–	–	Search report	–

12 members in 5 offices

This recordMember, by publication datePriority claim

Priority claims12

Priority claims
Document	Office	Kind	Date
9308698	Japan	A	1998-04-06
9308698	Japan	–	1998-04-06
13944398	Japan	A	1998-05-21
13944398	Japan	–	1998-05-21
14899698	Japan	A	1998-05-29
14899698	Japan	–	1998-05-29
13944398	–	–	–
14899698	–	–	–
9308698	–	–	–
JP19980093086	–	–	–
JP19980139443	–	–	–
JP19980148996	–	–	–

Members12

Family members, oldest first
Document	Office	Kind
EP0949731A2	European Patent Office (EPO)	A2	1999-10-13
EP0949731A3This record	European Patent Office (EPO)	A3	2000-01-26
JP2000049410A	Japan	A	2000-02-18
TW419872B	Taiwan Province of China	B	2001-01-21
US6249534B1	United States of America	B1	2001-06-19
EP0949731B1	European Patent Office (EPO)	B1	2002-03-06
DE69900953D1	Germany	D1	2002-04-11
DE69900953T2	Germany	T2	2002-07-04
JP2008211234A	Japan	A	2008-09-11
JP2008252138A	Japan	A	2008-10-16
JP4598841B2	Japan	B2	2010-12-15
JP4598845B2	Japan	B2	2010-12-15

32 legal events, as 4 offices reported them to INPADOC

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	Event	Code	Office
2019-04-06	Expiry of rightR071	R071	DE
2018-07-31	Annual fee paid to national office [announced via postgrant information from national office to epo]GrantedPGFP	PGFP	EP
2018-05-31	Annual fee paid to national office [announced via postgrant information from national office to epo]GrantedPGFP	PGFP	EP
2018-03-27	Fee paymentPLFP	PLFP	FR
2017-03-13	Fee paymentPLFP	PLFP	FR
2016-03-09	Fee paymentPLFP	PLFP	FR
2015-01-30	Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25	PG25	EP
2014-12-24	Gb: european patent ceased through non-payment of renewal feeCeasedGBPC	GBPC	EP
2013-07-31	Annual fee paid to national office [announced via postgrant information from national office to epo]GrantedPGFP	PGFP	EP
2003-02-26	No opposition filedOpposition26N	26N	EP
2003-01-11	No opposition filed within time limitOppositionORIGINAL CODE: 0009261PLBE	PLBE	EP
2003-01-11	Information on the status of an ep patent application or granted ep patentGrantedSTATUS: NO OPPOSITION FILED WITHIN TIME LIMITSTAA	STAA	EP
2002-08-02	Fr: translation filedET	ET	EP
2002-04-11	Corresponds to:REF	REF	EP
2002-03-06	Designated contracting statesAK	AK	EP
2002-01-18	(expected) grantORIGINAL CODE: 0009210GRAA	GRAA	EP
2002-01-01	European patent in force as of 2002-01-01IF02	IF02	GB
2001-12-05	Despatch of communication of intention to grant a patentORIGINAL CODE: EPIDOS IGRAGRAH	GRAH	EP
2001-09-12	Party data changed (applicant data changed or rights of an application transferred)RAP1	RAP1	EP
2001-09-11	Despatch of communication of intention to grantORIGINAL CODE: EPIDOS AGRAGRAG	GRAG	EP
2001-09-11	Despatch of communication of intention to grant a patentORIGINAL CODE: EPIDOS IGRAGRAH	GRAH	EP
2001-06-27	First examination report despatched17Q	17Q	EP
2001-05-07	Despatch of communication of intention to grantORIGINAL CODE: EPIDOS AGRAGRAG	GRAG	EP
2001-04-25	Information provided on ipc code assigned before grant7H 01S 5/323 A, 7H 01S 5/343 B, 7H 01S 5/028 BRIC1	RIC1	EP
2000-10-04	Designation fees paidDE FR GBAKX	AKX	EP
2000-08-23	Request for examination filed17P	17P	EP
2000-01-26	Designated contracting statesAK	AK	EP
2000-01-26	Request for extension of the european patentAL;LT;LV;MK;RO;SIAX	AX	EP
1999-12-11	Search report despatchedORIGINAL CODE: 0009013PUAL	PUAL	EP
1999-10-13	Designated contracting statesAK	AK	EP
1999-10-13	Request for extension of the european patentAL;LT;LV;MK;RO;SIAX	AX	EP
1999-08-27	Public reference made under article 153(3) epc to a published international application that has entered the european phaseORIGINAL CODE: 0009012PUAI	PUAI	EP

Nitride semiconductor laser device

Abstract

Term

Priority claims12

Members12

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