EP0949685A3
Semiconductor element and its manufacturing method
Abstract
In a semiconductor element comprising microcrystalline semiconductor, a semiconductor junction is provided within a microcrystal grain. Further, in a semiconductor element comprising microcrystalline semiconductor, providing microcrystal grains of different grain diameters as a mixture to form a semiconductor layer. Thereby, discontinuity of a semiconductor junction is improved to improve the characteristics, durability, and heat resisting properties of a semiconductor element. Distortion in a semiconductor layer is also reduced.

Term
Term ended
Projected expiry passed 15 March 2019, 7.5 years ago.
- Priority
- Filed
- Published
- Projected expiry
- Today
1 sheet
Sheet 1
Every citation, both ways
| Document | Relation | Office | Category | Cited during | Relevant claims |
|---|---|---|---|---|---|
| EP0656664A1 | Cites | European Patent Office (EPO) | X | Search report | 23 |
| EP0675551A2 | Cites | European Patent Office (EPO) | X | Search report | 20-23,10,11 |
| DE4333416A1 | Cites | Germany | A | Search report | 20,21 |
| US4434318A | Cites | United States of America | X | Search report | 23 |
| US4600801A | Cites | United States of America | X | Search report | 25 |
| US5006180A | Cites | United States of America | XA | Search report | 10,13,14,17,19,25 |
| US5456762A | Cites | United States of America | X | Search report | 10-14,17-19,25 |
| US5486237A | Cites | United States of America | XA | Search report | 1,2,4,6 |
| JPH09199426A | Cites | Japan | X | Search report | 24 |
| JPS5969920A | Cites | Japan | X | Search report | 10,11,13,17,19 |
| JPS63258078A | Cites | Japan | X | Search report | 10,11,17,19 |
| MEIER J ET AL: "Towards high-efficiency thin-film silicon solar cells with the "micromorph" concept", SOLAR ENERGY MATERIALS AND SOLAR CELLS,NL,ELSEVIER SCIENCE PUBLISHERS, AMSTERDAM, vol. 49, no. 1-4, 1 December 1997 (1997-12-01), pages 35 - 44, XP004099569, ISSN: 0927-0248 | Non-patent | – | – | Search report | – |
| YI J ET AL: "AMORPHOUS AND MICRO-CRYSTALLINE SILICON FOR PHOTOVOLTAIC APPLICATION", PROCEEDINGS OF THE PHOTOVOLTAIC SPECIALISTS CONFERENCE,US,NEW YORK, IEEE, vol. CONF. 23, 1993, pages 977 - 980, XP000486901, ISBN: 0-7803-1220-1 | Non-patent | – | – | Search report | – |
13 members in 4 offices; this record represents the family
Priority claims4
| Document | Office | Kind | Date |
|---|---|---|---|
| 6528798 | Japan | – | |
| 6528798 | Japan | A | |
| 6685498 | Japan | – | |
| 6685498 | Japan | A |
Members13
| Document | Office | Kind | |
|---|---|---|---|
| JPH11261094A | Japan | A | |
| JPH11266030A | Japan | A | |
| CN1231518A | China | A | |
| EP0949685A2 | European Patent Office (EPO) | A2 | |
| US6303945B1 | United States of America | B1 | |
| US2001030321A1 | United States of America | A1 | |
| US6635899B2 | United States of America | B2 | |
| CN1163972C | China | C | |
| CN1532942A | China | A | |
| US2005173704A1 | United States of America | A1 | |
| US7001460B2 | United States of America | B2 | |
| EP0949685A3This record | European Patent Office (EPO) | A3 | |
| CN100362667C | China | C |
9 legal events, as the office reported them to INPADOC
Over the term
Point at a mark for the eventEvents
| Event | Code | |
|---|---|---|
| Application withdrawnWithdrawn18W | 18W | |
| Designated contracting statesAK | AK | |
| Request for extension of the european patentAX | AX | |
| Information on the status of an ep patent application or granted ep patentGrantedSTATUS: THE APPLICATION HAS BEEN WITHDRAWNSTAA | STAA | |
| Search report despatchedORIGINAL CODE: 0009013PUAL | PUAL | |
| Information provided on ipc code assigned before grant7H 01L 31/036 A, 7H 01L 31/0376 B, 7H 01L 31/20 B, 7H 01L 31/075 B, 7H 01L 31/18 B, 7H 01L 31/0368 BRIC1 | RIC1 | |
| Designated contracting statesAK | AK | |
| Request for extension of the european patentAL;LT;LV;MK;RO;SIAX | AX | |
| Public reference made under article 153(3) epc to a published international application that has entered the european phaseORIGINAL CODE: 0009012PUAI | PUAI |
Numbers
- Publication
- 0949685
- Application
- 991052531
Titles3
- German
- Halbleiter-Bauelement und sein Herstellungsverfahren
- English
- Semiconductor element and its manufacturing method
- French
- Composant semiconducteur and son procédé de fabrication
Classification
- CPC, 9
- H10F10/172
- Y02E10/548
- Y02E10/52
- Y02E10/545
- Y02P70/50
- H10F77/1645
- H10F77/1648
- H10F77/48
- H10F71/107
- IPC, 9
- H01L31 036
- H01L31 0376
- H01L31 20
- H01L31 075
- H01L31 18
- H01L31 0368
- H01L31 052
- H01L31 076
- H10P14 24
Designated states2
- Contracting states, 1
- Sweden
- Extension states, 1
- Slovenia