EP0907967A2
Soi-transistor circuitry employing soi-transistors and method of manufacture thereof
Abstract
This record has no abstract on file.
Term
Term ended
Projected expiry passed 18 June 2017, 9.3 years ago.
- Priority
- Filed
- Published
- Projected expiry
- Today
Every citation, both ways
| Document | Relation | Office | Cited during |
|---|---|---|---|
| EP0472726A1 | Cites | European Patent Office (EPO) | Third party observation |
| US5298780A | Cites | United States of America | Third party observation |
18 members in 6 offices
Priority claims3
| Document | Office | Kind | Date |
|---|---|---|---|
| 19960668388 | United States of America | – | |
| 66838896 | United States of America | A | |
| 9710591 | United States of America | W |
Members18
| Document | Office | Kind | |
|---|---|---|---|
| WO9749134A2 | World Intellectual Property Organization (WIPO) | A2 | |
| AU3492997A | Australia | A | |
| WO9749134A3 | World Intellectual Property Organization (WIPO) | A3 | |
| EP0907967A2This record | European Patent Office (EPO) | A2 | |
| US5929476A | United States of America | A | |
| JP2000513502A | Japan | A | |
| US2002048883A1 | United States of America | A1 | |
| US6404008B1 | United States of America | B1 | |
| US6459610B1 | United States of America | B1 | |
| US6586304B2 | United States of America | B2 | |
| KR20040000407A | Republic of Korea | A | |
| JP2004104135A | Japan | A | |
| JP3545768B2 | Japan | B2 | |
| KR100519127B1 | Republic of Korea | B1 | |
| JP2008124519A | Japan | A | |
| JP2012138604A | Japan | A | |
| JP5476619B2 | Japan | B2 | |
| JP5629872B2 | Japan | B2 |
6 legal events, as the office reported them to INPADOC
Over the term
Point at a mark for the eventEvents
| Event | Code | |
|---|---|---|
| Application refused18R | 18R | |
| Information on the status of an ep patent application or granted ep patentGrantedSTATUS: THE APPLICATION HAS BEEN REFUSEDSTAA | STAA | |
| First examination report despatched17Q | 17Q | |
| Request for examination filed17P | 17P | |
| Designated contracting statesAK | AK | |
| Public reference made under article 153(3) epc to a published international application that has entered the european phaseORIGINAL CODE: 0009012PUAI | PUAI |
Numbers
- Publication
- 0907967
- Application
- 979312500
Titles3
- English
- SOI-TRANSISTOR CIRCUITRY EMPLOYING SOI-TRANSISTORS AND METHOD OF MANUFACTURE THEREOF
- French
- CIRCUIT CONSTITUE DE TRANSISTORS A SEMICONDUCTEURS-SUR-ISOLATEURS ET SON PROCEDE DE FABRICATION
- German
- SOI-TRANSISTOR, SCHALTUNGSANWENDUNGEN VON SOI-TRANSISTOREN UND DEREN HERSTELLUNGSVERFAHREN
Classification
- CPC, 5
- H10D86/201
- H10B12/00
- Y10S257/905
- H10D86/01
- H10D30/6728
- IPC, 7
- H01L21 8242
- H01L21 336
- H01L21 84
- H01L27 108
- H01L27 12
- H01L29 786
- H10B12 00
Designated states18
- Contracting states, 18
- Austria
- Belgium
- Switzerland
- Germany
- Denmark
- Spain
- Finland
- France
- United Kingdom
- Greece
- Ireland
- Italy
- Liechtenstein
- Luxembourg
- Monaco
- Netherlands (Kingdom of the)
- Portugal
- Sweden