Semiconductor light source and method of fabrication

0001The invention relates to a semiconductor light source with a epitaxially grown layer stack according to the preamble of claim 1 and a method for their preparation.

0002Examples of light sources of the type mentioned are transparent Infrared emitting diodes (IREDs) and light emitting diodes (LEDs). The Layers of the layer stack of such light sources are on a growth substrate in the form of a crystal epitaxially grown successively. A portion of the generated in the layer stack Photons from the stack toward the growth substrate emitted and absorbed there.

0003For such semiconductor light sources the highest possible optical Performance is attempted, the absorption in the growth substrate to largely avoid. Central to this are - except the possible in a few cases, use of the photons transparent growth substrates - inserted Bragg reflectors of semiconductor material between the growth substrate and the grown layer stack or the subsequent a transparent mounting for the photon Supporting body to the stack of layers, for example by wafer bonding.

0004During the subsequent attachment of the transparent support body the stack of layers of the supporting body is flat and such intimately with the side facing away from the growth substrate surface connected to the layer stack, that the supporting body similar is directly fixed to the layer stack, as the growth substrate itself. This direct attachment is beispiesweise by melting or growth of transparent supporting body made to the layer stack. After attaching the growth substrate from Layer stack is removed, after the layer stack and transparent Supporting body together as a similar uniform composite body as before layer stack and growth substrate present and the transparent support body the layer stack now as originally supported the growth substrate. In this state, the stack of layers is electrically contacted.

0005The features specified in claim 1 the invention is the object, a semiconductor light source with low photon absorption provide that both structurally simpler than also easier to manufacture.

0006In the semiconductor light source according to the invention is advantageously neither a photon absorbing growth substrate , a support body for supporting the stack of layers No, the one direction as the stack of layers to connected unitary composite component and the layer stack Photons produced is transparent and the building and the production of the light source complicated.

0007The light source according to the invention consists essentially only nor of the stack of layers of a small total thickness of not more than 50 microns alone, of the electrical contact and mechanical stability at a separate carrier body arranged and a little effort erforderndes separate Connection means is connected to this body. A producing complicating intimate area connection between the surface of this thin layer stack and a transparent support body is advantageously not longer required.

0008Due to the design of the light source according to the invention can a the support body-facing surface of the layer stack be a refracting surface of an optical medium with respect to a refractive index of the layer stack significantly smaller refractive index, for example air, and borders due to the relatively large refractive index jump in layer stack Photons generated partly reflected that not then pass out of the stack of layers in the carrier body, but contribute to the optical power of the light source.

0009It is particularly advantageous if the support body at the facing surface of the layer stack reflector means for reflecting the generated in the layer stack and in this area be taken back into photons the stack of layers is formed (claim 2).

0010This has the advantage on the one hand, that all the layer stack generated photons impinging on the reflector device, not enter the separate carrier body, but in Direction from the carrier body are reflected away and the optical help power the inventive light source can, on the other hand, that the separate carrier body even at Light sources high optical power from any Material may consist, in particular a stack of layers in the Photons produced absorbent material.

0011As reflector means all are reflective acting Means suitable, on said facing the carrier body Surface of the layer stack may be formed as for example a coating applied to the surface reflective formed layer or in this surface reflective optical grating, for example a Bragg mirror.

0012In a preferred and advantageous embodiment of the invention Light source, the reflector means one on the support body-facing surface of the Layer stack arranged reflective contact (Claim 3). This contact can for electrically connecting the stack of layers are used on the carrier body, and because it has a reflective effect, no additional reflective acting means necessary. This simplifies producing the inventive light source.

0013The stack of layers of the light source according to the invention can advantageously only from the function of the semiconductor light source Only necessary epitaxially grown Layers.

0014A typical total thickness of grown on growth substrates and only the details necessary for the function of the light source epitaxially grown layers alone existing Layer stacks known diode light sources such as LEDs and IREDs insbesonderer high optical power ranges between 3 microns and 15 microns. With the invention may advantageously Such diode light sources with such a thin layer stacks be realized and accordingly, in Light source advantageously the sole invention Layer stack such small overall thickness in the range of only 3 microns to 15 microns (claim 4).

0015In particular, the invention advantageously provides for the realization Suitable of IRED and LED high optical power and accordingly in this case, the stack of layers of Light source according to the invention, the layer stack of IRED (Claim 5) or an LED (claim 6), wherein in this Case is also advantageous to use a reflector device according to Claim 2 to use.

0016However, the invention is not limited to such Diodenlichquellen, but also to other semiconductor light sources, For example, semiconductor laser applicable, which may generated the problem of leakage of the layer stack Photons by the support body-facing surface may be insignificant, so that measures to prevent dispensed of such withdrawal from the outset can be.

0017Fit the separate connecting means for each other of the layer stack and a separate carrier body is preferably from a fixed connection between the Layer stack and this support body manufacturing adhesive (Claim 7), preferably an adhesive (claim 8) and / or a solder (claim 9).

0018Lot and / or electrically conductive adhesive are preferably used where an electrically conductive connection does not interfere with or required, electrically insulating Adhesive where an electrically conductive connection to is avoided.

0019Other connection means, for example a clamp connection, can be used.

0020A diode light source according to the invention, in particular a Source high optical power, can advantageously such be structurally simple manner that the layer stack<ul><li>Layers of semiconductor material different from each other having conductivity type, between which is an optically active Transition from one to another type of conductivity to Generating the photon is formed, and</li><li>Semiconductor material of a conductivity type of the layer stack and semiconductor material of the other conductivity type another electrically contacted separately to the support body are (claim 10).</li></ul>

0021In this case it is expedient if the support body<ul><li>an electrical contact to the semiconductor material of a is connected conductivity type of the layer stack, and</li><li>an electrical contact of the other a separate Contact has, to the semiconductor material of the other conductivity type the layer stack is connected (Claim 11).</li></ul>

0022An electrical connection from the semiconductor material of the layer stack the inventive light source to a contact the carrier body is preferably a semiconductor material of this directly contacting semiconductor Contact connected to this contact of the carrier body (claim 12).

0023The semiconductor contact is preferably an ohmic contact, can also be a Schottky contact may however.

0024To connect a contact of the carrier body with a is semiconductor contact preferably solder and / or senior Adhesive used.

0025For diode light sources, the layers of semiconductor material are mutually different conductivity type, between where the optically active transition from one to which different other conductivity type is formed, usually parallel to a plane of the layers one above the other arranged so as to be perpendicular to this plane different sides of the transition are. According must in such a diode light source of a semiconductor material Conductivity type on one side and the semiconductor material of the of this one conductivity type different other Conductivity type contacted on the other side of the junction and to the electrically separated contacts of the carrier body are connected.

0026Semiconductor material of one conductivity type and semiconductor material of which various other conductivity type of Layer stack of the light source of the invention may in such a case, advantageously on the same Side of the junction, but electrically separated from each other to the electrically separate contacts of the carrier body be connected, if<ul><li>the stack of layers in a to a plane of the layers substantially parallel surface has a depression, extending perpendicularly from the surface in the direction to the plane of the layers by a transition from semiconductor material one conductivity type to the semiconductor material of the one conductivity type various other conductivity type the stack of layers extending therethrough, and if</li><li>the semiconductor material of a conductivity type a Contact of the carrier body and the semiconductor material of the other conductivity type in the well of an electrically of this contact of the carrier body separate other contact of the carrier body is connected (claim 13).</li></ul>

0027The layer stack is preferably such flat on arranged to the carrier body, that the surface of the layer stack, in which the recess is formed, the carrier body faces (claim 14).

0028The connection of the semiconductor materials different from each other Conductivity type of the layer stack to one another separate contacts of the support may in this prepared case advantageously in a particularly short path , when the electrically mutually separated contacts facing the carrier body on a the layer stack Surface of the carrier body are arranged, preferably as follows:

0029On the support body-facing surface of the layer stack are a semiconductor contact between these Surface and the optically active transition befindliches Semiconductor material of the stack immediately contacted, and arranged another contact that is electrically isolated from this Semiconductor contact and the semiconductor material between the isolated surface and the optically active transition of the stack is.

0030The semiconductor contact is a contact of the carrier body and the other contact of the layer stack to an electrically of this contact of the carrier body separate connected other contact of the carrier body, for example, by direct touch.

0031In the depression a semiconductor contact is arranged, the Semiconductor material of the layer stack, which by itself on the Support body side facing away from the optically active transition the stack is contacted immediately. This semiconductor contact in the recess is electrically from the semiconductor material the one conductivity type on the substrate body facing side of the optically active transition of the said material contacting semiconductor contact and connected to that port Contact the carrier body separated, on the other hand electrically to the other contact the stack of layers connected.

0032The connected to the semiconductor contact in the depression other contact of the layer stack and an electrical connection these two contacts can be made of advantageously the same material as the semiconductor contact made, wherein the compound is applied to a side wall of the recess can be.

0033Preferably, it is so arranged that the stack of layers two spaced remote from and at an angle to the plane of Layers standing end surfaces, which surface the the stack of layers in which the recess is formed, limit on mutually opposite sides, and in that the depression in the surface of an end face to other stretches (claim 15).

0034On the side facing away from the support body side of the optically active Transition befindliches semiconductor material of the layer stack preferably has a high electrical conductivity perpendicular to the plane of the layers of the layer stack to (claim 16).

0035The output of the inventive light source optical Power is generated in the stack of layers and passes through the Surface of the layer stack. To this optical power If possible, all produced in the layer stack Photons contribute. It should firstly necessary that möglichtst little of these photons are absorbed in the stack, ie, the stack should be transparent for these photons as possible be, on the other hand should as many of these photons best all through the surface of the layer stack leak ..

0036Maximum transparency of the layer stack is achieved, if the layers of the layer stack, possibly excluding in a range of an optically active transition, for in Layer stack photons produced are transparent (claim 17).

0037In order to promote the escape of generated in the layer stack Photons from the stack of layers is expediently a means for facilitating an escape of the Layer stack generated photons from the layer stack provided (claim 18).

0038As means for facilitating the escape of photons any means is suitable that the outlet of the photons promotes by the surface of the layer stack. For example can such means a coating applied to the surface be antireflection layer to the refractive index jump the optically refracting surface of a higher refractive index in Inside the stack to a lower refractive index outside the Stack lowers, thus facilitating the exit of the photons.

0039However, the application of an additional reflective layer often undesirable, for example, because the production the light source is not negligible consuming and expensive becomes.

0040A way to a simple realization of a device for Facilitate the escape of photons is to avoid of plane-parallel reflective surface portions the stack of layers, ie, facing away from each other, Surface portions are not planar and / or parallel to each other be. Such surface portions may be used alone by geometric Gestaltgebung of the layer stack and thus be implemented without great expense.

0041Plane parallel reflective surface sections can be avoided if the means for facilitating the is formed exit of photons so that they<ul><li>obliquely to each other at an angle arranged surface portions comprising (claim 19) and / or</li><li>a formed on the surface of the layer stack Relief comprises (Claim 20), the preferably finely structured is.</li></ul>

0042Obliquely to each other at an angle disposed surface portions For example, two facing away from each and standing at an angle to the plane of the layers of end faces, the angle in this plane at an angle to each other extend and / or of which at least one end face obliquely is disposed at an angle to the plane.

0043A formed on the surface of the layer stack finely textured relief may by roughening the surface or by an uneven microstructuring the surface be generated. Such relief is preferably on the side facing away from the support surface of the layer stack formed, but can also on the carrier body whose facing surface and on all other Oberflächenabschhnitten be provided.

0044Obliquely at an angle to the plane of the layers arranged Surface portions of the layer stack, including one, several or all end faces of the stack and / or at least a wall surface of a recess are preferably at angles less than 30 ° at unshed and smaller than 40 ° at inclined shed light sources according to the invention to the plane, wherein the direction of inclination is arbitrary.

0045In general, in an angle to the plane of the layers arranged shaped surface regions of the layer stack as desired be. The shape of the base or the outline the stack of layers in a perpendicular projection on to a Plane of the layers parallel plane is generally desired selectable.

0046Advantageously, the layer stack according to the invention have conventionally III-V semiconductor material (Claim 21), including all common III-V compounds of In, Ga, Al, As, P, N on GaAs, InP, GaP or GaN-based.

0047An optically active junction, a pn or pin junction be. Advantageously, the layer stack according to the invention be formed in a conventional manner, that the optically active transition from one between two layers Semiconductor material mutually different conductivity type the stack of layers arranged active layer has, in the photons are produced (claim 22). To on the active layer, all other layers of semiconductor material the stack of layers as transparent as possible.

0048The support body is advantageously made of a material, which has a similar thermal expansion coefficient as dersch maybe stack having (claim 23), ie, the thermal Expansion coefficients of the materials of the carrier body and the stack of layers soft at the temperatures which during operation of the semiconductor light source according to the invention occur or which is exposed to the source, at most so low apart from that no harmful temperature-related Deformations of the layer stack occur affecting its optical quality and optical and / or long-term mechanical stability of the invention may affect light source.

0049The support body is preferably made of a good heat conducting Material (claim 24) having a good heat dissipation guaranteed by the layer stack continues.

0050A highly suitable for the support body material whose thermal expansion coefficient well to the stack of layers adapted and good thermal conductivity which is silicon.

0051The electrical connection of the light source according to the invention from the outside via the electrically separated from each other Contacts of the carrier body, for example by bonding wires and / or solder. If the carrier body made of electrically conductive Material can distinguish two advantageous variants will:<sl><li>a1) Electrically separated contacts of the carrier body consist of the electrically conductive surface of the Carrier body isolated contacts, or</li><li>a2) a contact is advantageously an electrically from the conductive surface of the carrier and isolated contact an electrically separate from that contact other contact is formed from the surface of the support itself (Claim 25).</li></sl>

0052In each case, the contacts are advantageously a stack of layers on the facing surface of the carrier body arranged to give a particularly short and simple connection of different semiconductor materials Conductivity type of the layer stack on both sides its optically active transition to these contacts result then, when these materials on the facing the carrier body Surface of the stack are contacted because then the contacts on the surface of the support body and these semiconductor materials contacting semiconductor contacts on this surface-facing surface of the layer stack directly opposite each other and can touch.

0053A2 in case it may be advantageous if the electrical connection the light source of the invention from outside via the electrically separate contacts on the carrier body is carried out so that the one of the electrically isolated his contact of the carrier body and the other of the surface the carrier body itself formed contact indirectly by the electrically conductive base body from the outside therethrough is contacted, preferably so that from a layer stack contacted remote from the surface of the carrier body (Claim 26).

0054The light source of the invention is preferably and advantageously manufactured so that on a Wachstumssinbstrat epitaxially of certain for the light source grown layers stack connected to the growth substrate Layer stack on the carrier body, the electrically the separate contacts having arranged and secured to the connecting means and electrically contacted is, and then the fastened on the carrier body in such a way Layer sequence is separated from the growth substrate (Claim 27).

0055This process is in relation to the separation of the layer stack the growth substrate preferably adapted that epitaxially on the growth substrate, an intermediate layer is grown of a material that selectively with a acting etchant is etched, which Materialiden the the layers of the layer stack is not or less strong attack, as the material of the intermediate layer, that on the intermediate layer epitaxially layers of the layer stack be grown, and that for separating the layer stack from the growth substrate, the intermediate layer with the selective acting etchant is etched. (Claim 28). This The method can, for example, from a growth substrate GaAs, a stack of layers on the basis of InGaAlAs, a Intermediate layer of AlAs and a hydrofluoric acid etchant be carried out from.

0056In the production of the semiconductor light sources according to the invention is advantageously proceeded in that several Layer stack in the wafer assembly as islands or in Meseten Raster several support bodies are prepared, the Form the base of each layer stack selected as desired is preferably an acute angle to each other child pages.

0057The invention will in the following description with reference to the figures described in closer detail. Show it:<dl tsize="8"><dt>figure 1</dt><dd>a side view of an embodiment of a Semiconductor light source according to the invention,</dd><dt>figure 2</dt><dd>a plan view of the embodiment of FIG 1,</dd><dt>figure 3</dt><dd>a modification of the embodiment of the Figures 1 and 2 in the side view of Figure 1 and</dd><dt>figure 4</dt><dd>the layer stack and the carrier body of the embodiment according to Figures 1 and 2 in a side view according to FIG 1, wherein the stack of layers still intimately linked to the growth substrate, and more is not fixed on the carrier body.</dd></dl>

0058The figures are schematic and not to scale.

0059In the figures, the stack of layers 1 and the carrier body designated by the second The layers of the layer stack 1 are parallel to a plane defined 100 of the layers arranged. The layer stack 1 comprises two mutually averted Surfaces 14 and 14 ', between which the total thickness d of the stack 1 measured.

0060is essential to the invention that the layer stack 1 in the Total thickness d of at most 50 microns alone, ie without a Growth substrate and / or other direction as the stack 1 associated support body to the separate, electrically separate contacts 21 and 22 having the support body 2 is arranged, and in that the layer stack 1 and the support body 2 to each other by a separate connection means 3 are attached.

0061The layer stack 1 can successively every structure of epitaxially have grown layers to a semiconductor light source may have.

0062In the embodiments shown, the semiconductor light source is in particular, a diode light source, wherein the layer stack 1 of epitaxially grown successively Layers of semiconductor material different from each other Conductivity type, between which at least a photon producing optically active transition from one is formed on the other conductivity type, Semiconductor material of one conductivity type and semiconductor material the other conductivity type of the layer stack 1 are mutually separated electrically contacted.

0063A typical total thickness d of a layer stack 1 of conventional Diode light sources is in the range between 3 microns and 15 microns. Even with a Diodenlichquelle invention has alone on separate carrier body 2 angeordnet1 Layer stack 1 advantageously has an overall thickness d in Range from 3 .mu.m to 15 .mu.m.

0064As with conventional diode light sources is also at a Diode light source of the invention the optically active transition usually at least one active layer of the layer stack assigned 1, the photons generated in this transition will.

0065is at the diode light sources shown in the figures a simple form of a layer stack 1 is assumed. This consists of a layer 11 of semiconductor material of one conductivity type, a layer 13 of semiconductor material the other conductivity type and an active Layer 12 for the generation of photons between the Layer 11 and layer 13 is arranged.

0066When the plane 100 arranged in parallel layers 11, 12 and 13 is a central plane of the active layer Layer taken 12th

0067The layer stack 1 is shown in Figures 1, 3 and 4 in such a way that the plane 100 of the layers horizontal and perpendicular and to the drawing plane in FIG 2 in parallel to the drawing plane is arranged.

0068The photon producing optically active transition with 10 designates, is located between the layer 11 and the Layer 13 and extends parallel to the plane 100 of the Layers. To junction 10, the active layer is to include 12th

0069The number of epitaxially grown layers of the layer stack 1 is not limited to three and may be greater. For example, the layers 11, 12 and 13 may each laminated be.

0070The semiconductor material of the layers 11 and 13 of the layer stack 1 chosen such that it in between these Layers 11 and 12 arranged active layer 12 produced Photon is transparent.

0071In the illustrated examples carrier body 2 and Stack of layers 1 relative to each other such that a the stack 1-facing surface 24 of the carrier body 2 and the level 100 of the layers of the stack 1 is substantially are parallel to each other. Of the two mutually averted Surfaces located 14 and 14 'of the support body 2, the Surface 14 of the surface 24 of the support body 2 opposite.

0072The electrically separate contacts 21 and 22 of the The carrier body 2 are in the example according to Figures 1, 2 and 4 metal layers between the opposed and substantially parallel surfaces 14 arranged and 24 of the layer stack 1 and carrier body 2 and are mounted on the surface 24 of the support body second

0073If the carrier body 2 of electrically conductive material, for example metal, the contacts must be 21 and 22 of the Surface 24 may be isolated. In any case, they are obliged to be connected to the surface 24, for example by means Adhesive or by vapor deposition.

0074The layer stack 1 is arranged, for example, that the layer 11 between the base body 2 and the optically active transition is 10, said surface 24 of the carrier body 2 opposite surface 14 of the Layer stack 1 from the semiconductor material of this layer 11 there.

0075On this surface 14 of the layer stack 1 are a Semiconductor contact 15, of the semiconductor material of the layer 11 of the stack 1 directly contacted, and another Contact 160 electrically from the semiconductor contact 15 and the Semiconductor material of the layer 11 is separately arranged. The semiconductor contact 15 is preferably an ohmic contact, but could, depending on the structure of the layer stack 1 also for example be a Schottky contact.

0076The semiconductor contact 15 is located directly on the contact 21 and the other contact 160 of the directly on the contact 22 Carrier body 2. It could be also vice versa.

0077In the surface 14 of the stack 1, a recess 17 formed, which r of this surface 14 in the direction perpendicular to the plane 100 of the layers in the depth of Layer stack 1 extends into the layer 13, ie in the semiconductor material of the one conductivity type of Semiconductor material of the layer 11, various other Conductivity type in Unterschiched to which between the surface 14 and the junction 10 of the stack 1 located ends of the semiconductor material layer 11 on the of this surface 14 side remote from the optically active Junction 10 is.

0078In the recess 17, a semiconductor contact 16 is arranged, the semiconductor material of the other conductivity type of Layer 13 directly contacted, for example, on a Bottom surface 170 of the recess 17, and a preferably ohmic contact is. This semiconductor contact 16 is electrically connected to the other contact 160, for example, by an electrical connecting line 161st

0079The semiconductor contact 16, the electrical connecting line 161 and the other contact 160 must be electrically from the semiconductor material the layer 11, the contacting this material Semiconductor terminal contact 15 and the contact 21 of the his support body 2 separately.

0080The other contact 160 and the electrical connection line 161 may advantageously consist of the same material as the semiconductor contact 16 are made. The electrical connection line 161 may on one of the side wall surfaces 171 of the recess to be deposited 17th

0081The electrical isolation of the other contact 160 and the Connecting line 161 from the semiconductor material of the layer 11 of the stack 1, by an electrically insulating adhesive layer 162 between the layer 11 and the other contact be 160 and the connecting line 161 realized, which is also the firm connection of the other contact 160 with produces the layer stack.

0082In the examples shown, the layer 11 consists of p-doped semiconductor material, ie material of conductivity type p, and the layer 13 of n-doped semiconductor material, ie material of conductivity type n. It could also be reversed, ie, the layer 11 of n-doped and the Layer 13 made of p-doped semiconductor material.

0083In any case, the semiconductor material of the layer 13 should on the side facing away from the carrier body 2 side of the junction 10 the layer stack 1, a higher electrical conductivity perpendicular to the plane of the layers 100 than the semiconductor material the layer 11 between the junction 10 and the carrier body. 2

0084The separate connecting means 3 for fixing the thin Layer stack 1 on the support body 2 is, for example, consisting essentially of an electrically conductive adhesive and / or a solder connected with the the layer 11 Semiconductor contact 15 of the layer stack 1 firmly with the associated contact 21 of the support body 2 and also fixed 11 associated with the layer another contact 160 the stack 1 firmly to the associated contact 22 of the carrier body 2 connects. Prerequisite in this preferred Type of preparing a solid connection between the layer stack 1 and support body 2 is about contacts that given fixed connection of the semiconductor contact 15 and other contact 160 with the layer stack 1 and the contacts 21 and 22 with the support body second

0085The attachment of the layer stack 1 to the support body 2 need not be made through contacts. For example could be the opposite surfaces 14 and 24 the stack 1 and carrier body 2 to contact vacancies directly through a connection means 3, for example, a suitable adhesive to be fixed together.

0086The layer stack 1 comprises two facing away from each and vertically or obliquely at an angle to the plane 100 of the Layers standing end faces 19 which surface the 14 of the layer stack 1, in which is formed the recess 17 is limit on mutually opposite sides, and the recess 17 extends in the surface 14 of one of these two end surfaces 19 across the whole Layer stack 1 to the other end face 19th

0087For example, forms the recess 17 an elongated trench, which is parallel to the plane 100 of the layers in a longitudinal direction r1 between the end faces 19 extends, which is perpendicular in Figures 1, 3 and 4 to the drawing plane. These figures show a vertical surface 24 and to the plane parallel side surface 26 of the carrier body 2 and the end surface 19 of the layer stack 1, which in the figure 2 are arranged in each case below

0088In the embodiment according to Figures 1, 2 and 4, the Depression 17 preferably through a gap 17 'between the separate contacts 21 and 22 of the carrier body 2 are arranged so that these contacts 21 and 22 and correspondingly the contacts 15 and 160 of the layer stack 1 on opposite sides of the recess 17 are located. In the case of the recess 17 in the form of in the same direction r1 extending trench extending this gap 17 likewise r1 in this direction.

0089One at the carrier body 2 zingekehrten surface 14 of the Layer stack 1 formed reflector means 4 Reflecting generated in layer stack 4 and in this Area 4 impinging photons back into the layer stack 4 consists for example of the semiconductor contact 15, on the of the carrier body 2 facing surface 14 of the layer stack 1 is formed and which has a reflective effect, ie its the layer stack 1 facing flat side 150 is a reflecting surface. This contact 15 should the Support body 2 facing surface 14 of the layer stack 1 cover as large an area, so that as much photons reflected and as little as possible is lost.

0090A device 6 to facilitate the escape of the Layer stack 1 generated photons from the layer stack 1 has inclined at an angle relative to each other arranged Surface portions which in example of an angle an angle α to the plane of the layers 100 arranged end faces 18, 18 of the layer stack 1, perpendicular to the plane 100, the layers arranged side wall surfaces 171, 171 of the recess 17 and in the plane 100 of the layers angle β at an angle to each other and extending at an angle or arranged perpendicular to the plane 100 of the layers of end faces 19, 19 of the layer stack 1 are made and each associated in pairs two inclined at an angle form relatively arranged surface portions.

0091However, this is only a specific example, the end faces 18, 18, 19, 19 and wall surfaces 171, 171 may be in any other Fashion inclined at an angle relative to each other be arranged. Anyway, should two apart facing away from surface sections - end faces and / or wall surfaces - Obliquely to each other at an angle. The latter is ensured when facing away from each other two Surface portions of at least one inclined at an angle and the other in a different angle to this arranged angle oblique or perpendicular to the plane 100 of the layers and / or both of these surface portions in the plane 100 of the layers inclined at an angle to each other extend.

0092In addition, the means 6 to facilitate egress of a photon on the surface of the layer stack 1 trained finely textured relief on 61.

0093Under surface of the layer stack 1 is the entire to understand surface from facing the carrier body 2 Surface 14 which faces away from the carrier body 2 Surface 14 'and all other surface portions 18, 19, 170, 171 is. The relief 61 can run on any of these Surface portions 18, 19, 170, 171 may be formed, but should in the Figure 2 fragmentarily indicated at least on the side facing away from the carrier body 2 surface 14 ' be provided.

0094The angle α, in which an end face 18, 19 obliquely to Level 100 is disposed of the layers is preferably less than 30 ° at unshed and less than 40 ° with shed light sources according to the invention, the direction the inclination is arbitrary. Also, a wall surface 171 of the Recess 17 can in an angle α at an angle to Plane 100 of the layers may be arranged inclined.

0095When the layer stack 1 of III-V semiconductor material and the support body 2 is made of silicon, both have a sufficiently similar coefficients of thermal expansion and the support body 2 is sufficiently good thermal conductivity.

0096The carrier body 2 may consist of electrically insulating material, For example, undoped or semi-insulating semiconductor material such as silicon, or of electrically conductive material, For example, conducting semiconductor material such as silicon or metal.

0097In the case of the embodiment according to Figures 1, 2 and 4 need for conductive support body 2 all electrically from each other separate contacts 21 and 22 of the carrier body 2 of this can be electrically insulated.

0098In the figure 3 is a modified embodiment with a support body 2 shown of electrically conductive material, which differs from the embodiment according to Figures 1, 2 and 4, characterized discriminates that one of the contacts 21 and 22 of The support body 2, for example, the contact 22, the support body 2 electrically insulated and electrically of this Contact 22 separate other contact 21 by the material of Support body 2 itself is formed. In the figure 3, parts with the parts of the embodiment of Figures 1 and 2 match, designated by the same reference numerals.

0099In the example of Figure 3 the contact 22 of the carrier body 2 by an electrically insulating layer 23, for example, an adhesive layer of from the surface 24 Carrier body 2 insulated and electrically conductive through a Vebindungsmittel 3, for example, solder or electrically conductive Glue, with the other contact 160 of the layer stack 1 connected. The contact 21 of the carrier body 2 is formed by the surface 24 itself and by a electrically conductive Vebindungsmittel 3, for example, Lot or electrically conductive adhesive, directly to the semiconductor contact 15 of the layer stack 1 is connected.

0100Unlike the embodiment according to Figures 1, 2 and 4, wherein each of the electrically separate contacts 21 and facing 22 of the carrier body 2 on which the layer stack 1 Surface 24, each with an outer terminal contact 210 or 220, for example, a bonding wire is provided is in the example of Figure 3 of the electrically from the support body 2 insulated contact 22 on the surface 24 with a external terminal contact 220, and a surface 24 of this and thus facing away from the layer stack 1 of the surface 25 Support body 2 provided with an external connection contact 210, so that in this case, the semiconductor light source of the Rear side of the carrier body 2 and through the latter of is contacted outside.

0101The preparation of the semiconductor light source according to the invention is made with reference to the Figure 4 such that on a Growth substrate 5 of the epitaxially specific for the light source Layer stack 1 is grown, the substrate with the growth 5 associated layer stack 1 on which the electrically having separated contacts 21, 22 Carrier body 2 is placed and secured to the connecting means 3 and thereafter the fixed body 2 in such a way on the carrier Layer stack 1 separated from the growth substrate 5 becomes.

0102Accordingly, the said support body 2 facing surface 14 the layer stack 1 which is remote from the growth substrate 5 free surface of the layer stack 1, the separation before 1 of the layer stack from the growth substrate 5 are patterned and contacted, for example with the recess 17 and the contacts 15, 16 and 160 provided including interconnection 161 becomes.

0103In the figure 4, a carrier body 2 is according to the figures 1 and 2 believed it could just as well a support body 2 of Figure be used. 3

0104To separate the layer stack 1 from the growth substrate 5 is expediently so doing that epitaxial before Grow the layers of the layer stack 1 on the Growth substrate 5 epitaxially an intermediate layer 51 is grown of a material that selectively interacts with a is caustic etch that the material of each epitaxially to growing layer of the layer stack 1, in the example each of the layers 11, 12 and 13, do not or less strong attack, as the material of the intermediate layer 51 that epitaxially on the intermediate layer 51, the layers of the Layer stack 1 are grown and that for separating the Layer stack 1 from the growth substrate 5, the interlayer 51 is etched with the selectively acting etchant.

0105For example, a growth substrate 5 of GaAs, a Stack of layers 1 on the basis of InGaAlAs, an intermediate layer 51 used from AlAs and a flußsäurehaltiges etchant.

0106In the production of the semiconductor light sources according to the invention is advantageously proceeded in that several Layer stack 1 in the wafer assembly as islands or Meseten 50 be prepared in a grid of several carrier body 2, which the shape of the base of each layer stack 1 arbitrarily is selected, preferably with an acute angle to each other arranged side end surfaces 19. In Figure 4 is a single island 50 is shown extending from a base 52 a wafer fragmentary illustrated rises, of the Growth substrate 5 forms altogether. The intermediate layer 51 is on the raised surface 53 of the island or of Mesa 50 arranged.

0107To form the Meseten or islands 50 is preferably a procedure in which on the surface of the wafer, the intermediate layer 51 and the layers of the layer stack 1 over the entire surface epitaxially grown and then coated from the Surface the islands are 50 etched.