Nonvolatile semiconductor memory device
Abstract
A nonvolatile memory increases the number of times that data can be written and the length of time that data can be stored through use of architectural and addressing features. A principal feature lies in setting as a high reliability region a specific memory sector (first sector) among a plurality of memory sectors. Within the high reliability sector, two or more memory cells are written with the same data. During reading, the simultaneously written memory cells are read simultaneously, increasing current flow through the parallel current paths. This nonvolatile memory allows the size of the high reliability sector to be adjusted using signals supplied from external to the nonvolatile memory.

Term
Term ended
Projected expiry passed 11 September 2018, 8 years ago.
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1 sheet
Sheet 1
Every citation, both ways
| Document | Relation | Office | Category | Cited during | Relevant claims |
|---|---|---|---|---|---|
| EP0463580A2 | Cites | European Patent Office (EPO) | A | Search report | 1-21 |
| US4758988A | Cites | United States of America | Y | Search report | 1-21 |
| US5367484A | Cites | United States of America | Y | Search report | 1-21 |
| US5535162A | Cites | United States of America | A | Search report | 1-21 |
13 members in 6 offices
Priority claims8
| Document | Office | Kind | Date |
|---|---|---|---|
| 25359497 | Japan | A | |
| 25359497 | Japan | – | |
| 26714297 | Japan | A | |
| 26714297 | Japan | – | |
| 25359497 | – | – | – |
| 26714297 | – | – | – |
| JP19970253594 | – | – | – |
| JP19970267142 | – | – | – |
Members13
| Document | Office | Kind | |
|---|---|---|---|
| EP0903749A2 | European Patent Office (EPO) | A2 | |
| JPH1196781A | Japan | A | |
| JPH11110980A | Japan | A | |
| KR19990029930A | Republic of Korea | A | |
| TW397982B | Taiwan Province of China | B | |
| EP0903749A3This record | European Patent Office (EPO) | A3 | |
| US6256702B1 | United States of America | B1 | |
| KR100313065B1 | Republic of Korea | B1 | |
| JP3258945B2 | Japan | B2 | |
| JP3263636B2 | Japan | B2 | |
| EP0903749B1 | European Patent Office (EPO) | B1 | |
| DE69828669D1 | Germany | D1 | |
| DE69828669T2 | Germany | T2 |
31 legal events, as 4 offices reported them to INPADOC
Over the term
Point at a mark for the eventEvents
| Event | Code | Office | |
|---|---|---|---|
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Patent expired after termination of 20 yearsExpiredPE20 | PE20 | GB | |
| Patent expired because of reaching the maximum lifetime of a patentExpiredMK | MK | NL | |
| Expiry of rightR071 | R071 | DE | |
| Annual fee paid to national office [announced via postgrant information from national office to epo]GrantedPGFP | PGFP | EP | |
| Annual fee paid to national office [announced via postgrant information from national office to epo]GrantedPGFP | PGFP | EP | |
| Annual fee paid to national office [announced via postgrant information from national office to epo]GrantedPGFP | PGFP | EP | |
| Annual fee paid to national office [announced via postgrant information from national office to epo]GrantedPGFP | PGFP | EP | |
| Change of applicant/patenteeR081 | R081 | DE | |
| Change of representativeR082 | R082 | DE | |
| Assignments of patentsSD | SD | NL | |
| Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)REGISTERED BETWEEN 20150312 AND 20150318732E | 732E | GB | |
| Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)REGISTERED BETWEEN 20150305 AND 20150311732E | 732E | GB | |
| No opposition filedOpposition26N | 26N | EP | |
| No opposition filed within time limitOppositionORIGINAL CODE: 0009261PLBE | PLBE | EP | |
| Information on the status of an ep patent application or granted ep patentGrantedSTATUS: NO OPPOSITION FILED WITHIN TIME LIMITSTAA | STAA | EP | |
| Corresponds to:REF | REF | EP | |
| Designated contracting statesAK | AK | EP | |
| European patent grantedGrantedFG4D | FG4D | GB | |
| (expected) grantORIGINAL CODE: 0009210GRAA | GRAA | EP | |
| Grant fee paidORIGINAL CODE: EPIDOSNIGR3GRAS | GRAS | EP | |
| Despatch of communication of intention to grant a patentORIGINAL CODE: EPIDOSNIGR1GRAP | GRAP | EP | |
| First examination report despatched17Q | 17Q | EP | |
| Designation fees paidDE FI GB NLAKX | AKX | EP | |
| Request for examination filed17P | 17P | EP | |
| Designated contracting statesAK | AK | EP | |
| Request for extension of the european patentAL;LT;LV;MK;RO;SIAX | AX | EP | |
| Search report despatchedORIGINAL CODE: 0009013PUAL | PUAL | EP | |
| Designated contracting statesAK | AK | EP | |
| Request for extension of the european patentAL;LT;LV;MK;RO;SIAX | AX | EP | |
| Public reference made under article 153(3) epc to a published international application that has entered the european phaseORIGINAL CODE: 0009012PUAI | PUAI | EP |
Numbers
- Publication
- 0903749
- Publication, DOCDB
- 0903749
- Publication, EPODOC
- EP0903749
- Application
- 98117244
- Application, DOCDB
- 98117244
- Application, EPODOC
- EP19980117244
Titles3
- German
- Nichtflüchtige Halbleiterspeicheranordnung
- English
- Nonvolatile semiconductor memory device
- French
- Dispositif de mémoire à semiconducteur non-volatile
Classification
- CPC, 3
- G11C29/74
- G11C16/0441
- G11C16/3495
- IPC, 2
- G11C16 04
- G11C29 00
Designated states2
- Contracting states, 1
- Sweden
- Extension states, 1
- Slovenia