EP0903748A3
Nonvolatile semiconductor memory device
Abstract
A nonvolatile memory increases the number of times that data can be written and the length of time that data can be stored. A feature of the memory sets as a high reliability region a specific memory sector (for example, "0000" to "00FF") among a plurality of memory sectors. Within the high reliability sector, two or more memory cells are simultaneously written with the same data. During reading, the simultaneously written memory cells are read simultaneously, increasing current flow through the parallel current paths.

Term
Term ended
Projected expiry passed 11 September 2018, 8 years ago.
- Priority
- Filed
- Published
- Projected expiry
- Today
1 sheet
Sheet 1
Every citation, both waysCites: the store holds 3 of 4
| Document | Relation | Office | Category | Cited during | Relevant claims |
|---|---|---|---|---|---|
| EP0463580A2 | Cites | European Patent Office (EPO) | XY | Search report | 1-7 |
| US5029130A | Cites | United States of America | YA | Search report | 8 |
| US5535162A | Cites | United States of America | X | Search report | 1,2,4-7 |
4 priority claims, no other members on record
Priority claims4
| Document | Office | Kind | Date |
|---|---|---|---|
| 25359197 | Japan | A | |
| 25359197 | Japan | – | |
| 25359197 | – | – | – |
| JP19970253591 | – | – | – |
29 legal events, as 3 offices reported them to INPADOC
Over the term
Point at a mark for the eventEvents
| Event | Code | Office | |
|---|---|---|---|
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal feeWithdrawnR119 | R119 | DE | |
| Gb: european patent ceased through non-payment of renewal feeCeasedGBPC | GBPC | EP | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal feeWithdrawnR119 | R119 | DE | |
| Annual fee paid to national office [announced via postgrant information from national office to epo]GrantedPGFP | PGFP | EP | |
| Annual fee paid to national office [announced via postgrant information from national office to epo]GrantedPGFP | PGFP | EP | |
| Annual fee paid to national office [announced via postgrant information from national office to epo]GrantedPGFP | PGFP | EP | |
| Annual fee paid to national office [announced via postgrant information from national office to epo]GrantedPGFP | PGFP | EP | |
| No opposition filedOpposition26N | 26N | EP | |
| No opposition filed within time limitOppositionORIGINAL CODE: 0009261PLBE | PLBE | EP | |
| Information on the status of an ep patent application or granted ep patentGrantedSTATUS: NO OPPOSITION FILED WITHIN TIME LIMITSTAA | STAA | EP | |
| Corresponds to:REF | REF | EP | |
| Designated contracting statesAK | AK | EP | |
| European patent grantedGrantedFG4D | FG4D | GB | |
| (expected) grantORIGINAL CODE: 0009210GRAA | GRAA | EP | |
| Grant fee paidORIGINAL CODE: EPIDOSNIGR3GRAS | GRAS | EP | |
| Despatch of communication of intention to grant a patentORIGINAL CODE: EPIDOSNIGR1GRAP | GRAP | EP | |
| First examination report despatched17Q | 17Q | EP | |
| Designation fees paidDE FI GB NLAKX | AKX | EP | |
| Request for examination filed17P | 17P | EP | |
| Designated contracting statesAK | AK | EP | |
| Request for extension of the european patentAL;LT;LV;MK;RO;SIAX | AX | EP | |
| Search report despatchedORIGINAL CODE: 0009013PUAL | PUAL | EP | |
| Designated contracting statesAK | AK | EP | |
| Request for extension of the european patentAL;LT;LV;MK;RO;SIAX | AX | EP | |
| Public reference made under article 153(3) epc to a published international application that has entered the european phaseORIGINAL CODE: 0009012PUAI | PUAI | EP |
Numbers
- Publication
- 0903748
- Publication, DOCDB
- 0903748
- Publication, EPODOC
- EP0903748
- Application
- 98117243
- Application, DOCDB
- 98117243
- Application, EPODOC
- EP19980117243
Titles3
- German
- Nichtflüchtige Halbleiterspeicheranordnung
- English
- Nonvolatile semiconductor memory device
- French
- Dispositif de mémoire à semiconducteur non-volatile
Classification
- CPC, 3
- G11C16/3495
- G11C16/349
- G11C2216/28
- IPC, 3
- G11C16 02
- G11C16 06
- G11C16 34
Designated states25
- Contracting states, 19
- Austria
- Belgium
- Switzerland
- Cyprus
- Germany
- Denmark
- Spain
- Finland
- France
- United Kingdom
- Greece
- Ireland
- Italy
- Liechtenstein
- Luxembourg
- Monaco
- Netherlands (Kingdom of the)
- Portugal
- Sweden
- Extension states, 6
- Albania
- Lithuania
- Latvia
- North Macedonia
- Romania
- Slovenia