Method for fabricating thermally stable contacts
Abstract
In order to provide a thermally stable diffusion barrier for a contact, a layer of titanium (11) is formed on the patterned substrate (10). A layer of tungsten nitride (12) is formed on the titanium layer (11). After an annealing step, an interfacial layer (11') and a layer of titanium nitride (12') are formed between the substrate (10) and a tungsten layer (13'). These layers provide a diffusion barrier which is more thermally stable than a titanium nitride layer applied directly on the substrate and which permits the formation of a contact structures that can withstand subsequent high temperature steps.

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5 sheets
Sheet 1 Sheet 2 Sheet 3 Sheet 4 Sheet 5
Every citation, both waysCites: the store holds 3 of 4
| Document | Relation | Office | Category | Cited during | Relevant claims |
|---|---|---|---|---|---|
| US5429989A | Cites | United States of America | A | Search report | 1,5,6,10 |
| US5567652A | Cites | United States of America | A | Search report | – |
| US5633200A | Cites | United States of America | A | Search report | 1,3 |
| PATENT ABSTRACTS OF JAPAN vol. 012, no. 030 (E - 578) 28 January 1988 (1988-01-28) | Non-patent | – | – | Search report | – |
| PATENT ABSTRACTS OF JAPAN vol. 095, no. 009 31 October 1995 (1995-10-31) | Non-patent | – | – | Search report | – |
| UCHIBORI C J ET AL: "In/sub x/Ga/sub 1-x/As-based Ohmic contacts to n-type GaAs with W-nitride barrier prepared by radio frequency sputtering", 2ND INTERNATIONAL SYMPOSIUM ON CONTROL OF SEMICONDUCTOR INTERFACES, KARUIZAWA, JAPAN, 28 OCT.-1 NOV. 1996, vol. 117-118, Applied Surface Science, June 1997, Elsevier, Netherlands, pages 347 - 351, XP000852515, ISSN: 0169-4332 | Non-patent | – | – | Search report | – |
| UCHIBORI C J ET AL: "In/sub x/Ga/sub 1-x/As ohmic contacts to n-type GaAs with a tungsten nitride barrier", JOURNAL OF ELECTRONIC MATERIALS, APRIL 1997, TMS, USA, vol. 26, no. 4, pages 410 - 414, XP000852518, ISSN: 0361-5235 | Non-patent | – | – | Search report | – |
4 members in 3 offices
Priority claims5
| Document | Office | Kind | Date |
|---|---|---|---|
| 920303 | United States of America | – | |
| 92030397 | United States of America | A | |
| 92030397 | United States of America | A | |
| 920303 | – | – | – |
| US19970920303 | – | – | – |
Members4
| Document | Office | Kind | |
|---|---|---|---|
| EP0899779A2 | European Patent Office (EPO) | A2 | |
| JPH11135455A | Japan | A | |
| US5913145A | United States of America | A | |
| EP0899779A3This record | European Patent Office (EPO) | A3 |
12 legal events, as the office reported them to INPADOC
Over the term
Point at a mark for the eventEvents
| Event | Code | |
|---|---|---|
| Application deemed to be withdrawnWithdrawn18D | 18D | |
| Information on the status of an ep patent application or granted ep patentGrantedSTATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWNSTAA | STAA | |
| First examination report despatched17Q | 17Q | |
| Designation fees paidDE FR GB IT NLAKX | AKX | |
| Request for examination filed17P | 17P | |
| Designated contracting statesAK | AK | |
| Request for extension of the european patentAL;LT;LV;MK;RO;SIAX | AX | |
| Search report despatchedORIGINAL CODE: 0009013PUAL | PUAL | |
| Information provided on ipc code assigned before grant6H 01L 21/285 A, 6H 01L 21/768 BRIC1 | RIC1 | |
| Designated contracting statesAK | AK | |
| Request for extension of the european patentAL;LT;LV;MK;RO;SIAX | AX | |
| Public reference made under article 153(3) epc to a published international application that has entered the european phaseORIGINAL CODE: 0009012PUAI | PUAI |
Numbers
- Publication
- 0899779
- Publication, DOCDB
- 0899779
- Publication, EPODOC
- EP0899779
- Application
- 98306924
- Application, DOCDB
- 98306924
- Application, EPODOC
- EP19980306924
Titles3
- German
- Herstellungsverfahren von thermisch stabilen Kontakten
- English
- Method for fabricating thermally stable contacts
- French
- Méthode de fabrication de contacts thermiquement stables
Classification
- CPC, 5
- H10W20/047
- C23C16/08
- C23C16/16
- Y10S438/927
- H10W20/033
- IPC, 4
- C23C16 08
- C23C16 16
- H01L21 28
- H01L21 768
Designated states2
- Contracting states, 1
- Sweden
- Extension states, 1
- Slovenia