Lateral or vertical DMOSFET with high breakdown voltage

The present invention relates to semiconductor devices and more particularly to a DMOS transistor as defined in the preamble of Claim 1.

DMOS transistors are double-diffused MOS (metal-oxide semiconductor) field-effect transistors and are used predominantly in power applications. LDMOS transistors, that is, those with lateral current conduction and VDMOS transistors, that is, those with vertical current conduction, belong to this class of transistors.

Figures 1 and 2 show, in plan and in section, respectively, a portion of an LDMOS transistor with a conventional interdigitated structure. The transistor is formed on a monocrystalline silicon substrate 10 of which a portion defined by a major surface 9 is shown in the drawing and comprises: <ul id="ul0001" list-style="none"><li>a first region 11 which has n-type conductivity, is a portion of an epitaxial layer, and constitutes the drain region of the transistor,</li><li>a second region 12 which has p-type conductivity, is produced by implantation and subsequent diffusion of doping impurities in the first, or drain region 11, has elongate portions or fingers (only one of which is shown in the drawing), forms a p-n junction with the drain region 11, and constitutes the body region of the transistor,</li><li>a strongly-doped third region 13 which has n-type conductivity (indicated n+ in the drawing), and which constitutes the source region of the transistor and, with the edges of the body region 12, defines a portion 16 of the body region which constitutes the channel of the transistor,</li><li>a strongly-doped fourth region 14 which has p-type conductivity (indicated p+ in the drawing) and which, in the embodiment shown, is composed of various elemental parts (all indicated 14 in Figure 1) which extend from the major surface 9 and through the source region 13, establishing contact with the body region 12,</li><li>a first electrode 17, for example, of doped polycrystalline silicon, which is insulated from the monocrystalline silicon surface 9 by a thin dielectric layer, preferably of silicon dioxide, overlies the channel 16, and is connected to the gate terminal G of the transistor,</li><li>a second electrode 18, for example of aluminium, which is in electrical contact with the third and fourth regions 13 and 14, respectively, on the major surface 9 and thus electrically interconnects the source region 13 and the body region 12 on the surface, and which is connected to a terminal, indicated S in the drawing, of the transistor,</li><li>a third electrode 19, for example, also of aluminium, in electrical contact with the first or drain region 11 on the major surface 9 through a strongly-doped n-type region 21 which favours an ohmic contact between aluminium and silicon, and constituting the drain terminal D of the transistor.</li></ul>

An important electrical characteristic of transistors of the type described above is reverse conduction between source and drain with the body, source and gate short-circuited. As is known, conduction starts when the voltage V_DS between the drain and source reaches a value such as to bring about reverse conduction in the junction between the body region 12 and the drain region 11. This value, which is indicated as the breakdown voltage BV_DSS, is determined by the physical and geometrical characteristics of the transistor. For the transistor to operate correctly in these conditions, the voltage V_DS must remain constant irrespective of the drain current I_D, as shown in Figure 3. In certain cases, however, the characteristic <maths id="math0001"><math display="inline"><mrow><msub><mrow><mtext>V</mtext></mrow><mrow><mtext>DS</mtext></mrow></msub><msub><mrow><mtext>=f(I</mtext></mrow><mrow><mtext>D</mtext></mrow></msub><mtext>)</mtext></mrow></math><img file="EP0841702A1_D0001.tif" /></maths> deviates considerably from the desired characteristic since, as shown in Figure 4, the voltage V_DS remains substantially constant at the value BV_DSS only for relatively low drain currents and decreases significantly and rapidly for higher currents. This phenomenon, known as "snap-back" considerably limits the field of use of the transistor.

The known behaviour described above is attributed to the switching-on of a parasitic bipolar (NPN) transistor which has the source region 13 as an emitter, the body region 12 as a base and the drain region 11 as a collector. A transistor of this type is shown by broken lines and indicated Tp in Figure 2. In operation, the current I_D which passes through the body region 12 during the breakdown of the body-drain junction in fact causes a voltage drop within the body region 12 because of its distributed resistance represented by a resistor Rd in series with the base of the transistor Tp; when this voltage drop exceeds the direct conduction threshold of the base-emitter junction, the parasitic transistor starts to conduct so that the voltage V_DS decreases suddenly.

To prevent or attenuate this problem, that is, to shift the switching-on of the parasitic transistor towards higher current values I_D, the doping of the body region 12 is normally increased in order thus to reduce the distributed resistance of this region. In certain cases, however, it is impossible or undesirable to increase this doping in order not to forego other characteristics of the transistor or in order not to complicate the normal manufacturing process with additional operations.

The object of the present invention is to propose a DMOS transistor in which the phenomenon described above does not occur or occurs only at very high currents.

This object is achieved, according to the invention, by the provision of the transistor defined and characterized in general in Claim 1.

The invention will be understood better from the following detailed description of two embodiments thereof given by way of non-limiting example with reference to the appended drawings, in which <ul id="ul0002" list-style="none"><li>Figure 1 shows, in plan, a portion of a known LDMOS transistor,</li><li>Figure 2 is a section taken on the line II-II of Figure 1,</li><li>Figure 3 is a graph showing a theoretical electrical characteristic of an LDMOS transistor with its source, body and gate short-circuited,</li><li>Figure 4 is a graph showing an actual electrical characteristic of a known LDMOS transistor,</li><li>Figure 5 shows, in plan, a portion of an LDMOS transistor according to a first embodiment of the invention,</li><li>Figure 6 is a section taken on the line VI-VI of Figure 5,</li><li>Figure 7 is a section taken on the line VII-VII of Figure 5,</li><li>Figure 8 shows, in plan, a portion of an LDMOS transistor according to a second embodiment of the invention,</li><li>Figure 9 is a section taken on the line IX-IX of Figure 8.</li></ul>

The invention is based upon the realisation that the switching-on of the parasitic transistor Tp is triggered in the vicinity of the edge portions of the p-n junction between the body region 12 and the drain region 11 in which the radius of curvature is smallest. In the structure shown in Figures 1 and 2, these edge portions are the corners of the elongate body region, shown by circles drawn in chain line and indicated 20 in Figure 1. In fact, it is known that the electric field which is established in the depletion region of a p-n junction polarized in reverse is more intense in the regions in which the radius of curvature between the p and n regions is smallest so that reverse conduction through this region starts at a voltage lower than that necessary to initiate reverse conduction of the straight portions of the junction.

With reference to Figures 5, 6 and 7, in which parts identical or corresponding to those of the known transistor shown in Figures 1 and 2 are indicated by the same reference numerals; according to the invention, a strongly doped p-type region, indicated 30, is associated with the corners 20 of the elongate body region. This region 30 extends into the body region 12 taking the place of the end portion of the n source region 13 of the known transistor of Figures 1 and 2 and is in surface electrical contact with the second electrode 18. As can be seen, the region 30 is closer to the aforementioned corners than any part of the source region 13. When the transistor is polarized as described above with reference to Figures 3 and 4, the current I_D which passes through the body-drain junction is collected by the body and source electrode 18 directly through the region 30 and a voltage drop sufficient to trigger the switching-on of the NPN parasitic transistor formed by the source, body and drain regions cannot therefore develop in the body region 12. The characteristic <maths id="math0002"><math display="inline"><mrow><msub><mrow><mtext>V</mtext></mrow><mrow><mtext>DS</mtext></mrow></msub><msub><mrow><mtext>=f(I</mtext></mrow><mrow><mtext>D</mtext></mrow></msub><mtext>)</mtext></mrow></math><img file="EP0841702A1_D0002.tif" /></maths> will therefore be very similar to the theoretical one shown in Figure 3.

It should be noted that the region 30 can be formed without operations additional to the normal process for the manufacture of the transistor. In fact, it can be produced simply by modification of the masks necessary for the formation of the regions 13 and 14 and, precisely, by modification of the mask for the region 13 so as to prevent n+ doping in the end portion of the elongate portion 12 and modification of the mask for the region 14 so as to permit p+ doping both in the areas intended for the body contact regions and in the end portion which is protected against n+ doping.

The second embodiment of the invention differs from that described above solely in that the structure of the transistor is not interdigitated but composite, that is, it is constituted by a plurality of elemental LDMOS transistors connected in parallel with one another. Figures 8 and 9 show an elemental LDMOS transistor which, in this embodiment, is square. Parts identical or corresponding to those of the first embodiment are indicated by the same reference numerals so that a detailed description of the drawings is not necessary. It suffices to point out that each of the four edge regions of the body-source junction which have small radii of curvature and which are also shown by circles drawn in chain line in this embodiment, is associated with a strongly doped p-type region which has the same function as the region 30 of the first embodiment and is therefore indicated by the same reference numeral. Moreover, in this embodiment, the p+ body contact region coincides with the region 30, region 30 meaning the four regions indicated by this numeral in Figures 8 and 9, taken in combination.

In both of the embodiments described above, the source region 13 and the region 30 are advantageously formed with the use of the gate electrode 17 as a mask so that they have an edge substantially aligned with the inner edge of the gate electrode.

Although only two embodiments of the invention have been described and illustrated, clearly many variations and modifications are possible within the scope of the same inventive concept. For example, the p+ region 30 of the first embodiment could be limited solely to the portions of the source region 13 which are directly facing the edge portions of the body-drain junction having small radii of curvature and could thus be constituted by two regions similar to those provided at the corners of the square which delimits the source region in the second embodiment (Figure 8). Moreover, the invention applies not only to LDMOS transistors, but also to VDMOS transistors, that is, those with vertical current flow, and can be implemented with the same advantages in a dual version of the devices shown and described, that is, with n regions in place of the p regions and p regions in place of the n regions.