EP0822584A3
Method of surface treatment of semiconductor substrates
Abstract
A method of depositing a side wall passivation layer on an etched feature in a semiconductor substrate, comprising placing the substrate in a vacuum chamber, striking a plasma, and introducing a hydrocarbon deposition gas to deposit a carbon or hydrocarbon layer.
Term
Term ended
Projected expiry passed 28 July 2017, 9.2 years ago.
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1 sheet
Sheet 1
Every citation, both ways
| Document | Relation | Office | Category | Cited during | Relevant claims |
|---|---|---|---|---|---|
| US4795529A | Cites | United States of America | A | Search report | 8-10,13-16,18,19 |
| US5079178A | Cites | United States of America | XY | Search report | 1,5 |
| US5368685A | Cites | United States of America | A | Search report | 11,12 |
| US5478437A | Cites | United States of America | XY | Search report | 1,5 |
| WO9414187A1 | Cites | World Intellectual Property Organization (WIPO) | YD | Search report | 8,11 |
| LAW ET AL: "Alkane based plasma etching of GaAs", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B., vol. 9, no. 3, June 1991 (1991-06-01), NEW YORK US, pages 1449 - 1455, XP000367929 | Non-patent | – | – | Search report | – |
| PATENT ABSTRACTS OF JAPAN vol. 7, no. 264 (E - 212) 24 November 1983 (1983-11-24) | Non-patent | – | – | Search report | – |
| PATENT ABSTRACTS OF JAPAN vol. 14, no. 242 (C - 721) 23 May 1990 (1990-05-23) | Non-patent | – | – | Search report | – |
11 members in 6 offices; this record represents the family
Priority claims2
| Document | Office | Kind | Date |
|---|---|---|---|
| 9616225 | United Kingdom | – | |
| 9616225 | United Kingdom | A |
Members11
| Document | Office | Kind | |
|---|---|---|---|
| GB9616225D0 | United Kingdom | D0 | |
| EP0822584A2 | European Patent Office (EPO) | A2 | |
| EP0822584A3This record | European Patent Office (EPO) | A3 | |
| JPH10144654A | Japan | A | |
| US6261962B1 | United States of America | B1 | |
| EP0822584B1 | European Patent Office (EPO) | B1 | |
| AT346379T | Austria | T | |
| ATE346379T1 | Austria | T1 | |
| DE69736969D1 | Germany | D1 | |
| DE69736969T2 | Germany | T2 | |
| JP4237281B2 | Japan | B2 |
51 legal events, as 7 offices reported them to INPADOC
Over the term
Point at a mark for the eventEvents
| Event | Code | Office | |
|---|---|---|---|
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Patent expired after termination of 20 yearsExpiredPE20 | PE20 | GB | |
| Expiry of rightR071 | R071 | DE | |
| Annual fee paid to national office [announced via postgrant information from national office to epo]GrantedPGFP | PGFP | EP | |
| Annual fee paid to national office [announced via postgrant information from national office to epo]GrantedPGFP | PGFP | EP | |
| Annual fee paid to national office [announced via postgrant information from national office to epo]GrantedPGFP | PGFP | EP | |
| Fee paymentPLFP | PLFP | FR | |
| Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)REGISTERED BETWEEN 20151022 AND 20151028732E | 732E | GB | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Patent ceasedCeasedPL | PL | CH | |
| Lapsed because of non-payment of the annual feeLapsedV1 | V1 | NL | |
| Be: lapsedLapsedBERE | BERE | EP | |
| Annual fee paid to national office [announced via postgrant information from national office to epo]GrantedPGFP | PGFP | EP | |
| Annual fee paid to national office [announced via postgrant information from national office to epo]GrantedPGFP | PGFP | EP | |
| Annual fee paid to national office [announced via postgrant information from national office to epo]GrantedPGFP | PGFP | EP | |
| Annual fee paid to national office [announced via postgrant information from national office to epo]GrantedPGFP | PGFP | EP | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| No opposition filedOpposition26N | 26N | EP | |
| No opposition filed within time limitOppositionORIGINAL CODE: 0009261PLBE | PLBE | EP | |
| Information on the status of an ep patent application or granted ep patentGrantedSTATUS: NO OPPOSITION FILED WITHIN TIME LIMITSTAA | STAA | EP | |
| Fr: translation filedET | ET | EP | |
| New agentNV | NV | CH | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Corresponds to:REF | REF | EP | |
| European patents granted designating irelandGrantedFG4D | FG4D | IE | |
| European patent takes effect as a national patent in ch/liEP | EP | CH | |
| Designated contracting statesAK | AK | EP | |
| European patent grantedGrantedFG4D | FG4D | GB | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| (expected) grantORIGINAL CODE: 0009210GRAA | GRAA | EP | |
| Grant fee paidORIGINAL CODE: EPIDOSNIGR3GRAS | GRAS | EP | |
| Despatch of communication of intention to grant a patentORIGINAL CODE: EPIDOSNIGR1GRAP | GRAP | EP | |
| Party data changed (applicant data changed or rights of an application transferred)RAP1 | RAP1 | EP | |
| Party data changed (applicant data changed or rights of an application transferred)RAP1 | RAP1 | EP | |
| First examination report despatched17Q | 17Q | EP | |
| Designation fees paidAT BE CH DE DK ES FI FR GB IE IT LI NL SEAKX | AKX | EP | |
| Designated contracting states (corrected)RBV | RBV | EP | |
| Request for examination filed17P | 17P | EP | |
| Designated contracting statesAK | AK | EP | |
| Request for extension of the european patentAL;LT;LV;RO;SIAX | AX | EP | |
| Search report despatchedORIGINAL CODE: 0009013PUAL | PUAL | EP | |
| Designated contracting statesAK | AK | EP | |
| Request for extension of the european patentAL;LT;LV;RO;SIAX | AX | EP | |
| Public reference made under article 153(3) epc to a published international application that has entered the european phaseORIGINAL CODE: 0009012PUAI | PUAI | EP |
Numbers
- Publication
- 0822584
- Application
- 973056419
Titles3
- German
- Verfahren zur Behandlung der Oberfläche von halbleitenden Substraten
- English
- Method of surface treatment of semiconductor substrates
- French
- Traitement de surface de substrats semi-conducteurs
Classification
- CPC, 4
- H10P50/244
- H10P14/683
- H10P14/6336
- H10P50/695
- IPC, 3
- H10P14 60
- H10P14 68
- C23F4 00
Designated states2
- Contracting states, 1
- Sweden
- Extension states, 1
- Slovenia