EP0803916A3

Light emitting device and manufacturing method thereof

Abstract

A light emitting device includes a cladding layer composed of a III-V group nitride system semiconductor of a first conductivity type, an active layer formed on the cladding layer of the first conductivity type and composed of a III-V group nitride system semiconductor containing In, an undoped cap layer formed on the active layer and composed of a III-V group nitride system semiconductor, and a cladding layer formed on the cap layer and composed of a III-V group nitride system semiconductor of a second conductivity type.

EP0803916A3, drawing sheet 1
Sheet 1 of 1

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Term ended

Projected expiry passed 7 April 2017, 9.5 years ago.

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