Thin film capacitor and method of manufacturing the same.

0001The invention relates to a thin film capacitor and a method of manufacturing the same.

0002Barium titanate (BaTiO₃) ceramics having a perovskite crystal structure have been widely used as capacitor materials and the like, since they have high resistivities and superior dielectric properties. Strontium titanate (SrTiO₃) becomes cubical at about a temperature higher than 110K, and is paraelectric. Ceramics mainly made from strontium titanate have lower dielectric constants than do the barium titanate ceramics. However, the strontium titanate ceramics have better temperature characteristics and less dielectric loss than do the barium titanate ceramics.

0003The curie points of ceramics can be shifted by employing an additive such as barium, lead or the like, thus providing paraelectric ceramics with a high dielectric constant at room temperature. These ceramics have been widely used for high frequency range and high voltage capacitors. Because complex perovskite compounds such as Pb(Mg_1/3, Nb_2/3)O₃ and Pb{(Mg_1/3, Nb_2/3)_1-YTi_Y}O₃ have higher dielectric constants and better direct current biases than do barium titanate dielectrics, they are used for small multilayer capacitors with high capacitance and the like.

0004As the demand for small, lightweight electronic components and highly integrated semiconductor devices increases, research in forming thin films of oxide materials having a perovskite structure and large dielectric constants such as barium titanate dielectric materials, strontium titanate dielectric materials, Pb{(Mg_1/3, Nb_2/3)_1-YTi_Y}O₃ dielectric materials and the like has been actively carried out in order to manufacture small high-volume capacitors.

0005As a method of forming thin layers, a sputtering method has been conventionally applied. (For example, the method is disclosed in K. Iijima et al., J. Appl. Phys., vol. 60, No.1, pp.361-367 (1986).) However, this method is slow in forming layers (<10nm/min), requires expensive monocrystal substrates such as MgO and is poor in controlling the compositions of layers.

0006A sol-gel method, which has been intensively researched recently, on the other hand, is excellent in controlling the compositions of layers and suitable for forming multicomponent thin layers. However, this method provides layers with poor quality and coverage over uneven surfaces so that it cannot be applied as an industrial manufacturing technique.

0007A CVD (chemical vapor deposition) method is excellent in controlling the compositions of layers, and can form layers on substrates having large surface areas. The method also has a good property of covering uneven surfaces. Therefore, this method can be applied as a method of forming perovskite dielectric thin layers. (<u>See</u> M. Okada et al., Jpn. J. Appl. Phys., vol. 28, No. 6, pp.1030-1034 (1989).) Compared with the sputtering method, the CVD method can form layers at high speed. However, the speed of forming a dielectric thin layer by the CVD method is still about 3 µm/h. For instance, in order to form a 2 µm thick dielectric layer (for example, BaTiO₃), the method takes about 40 minutes. (<u>See</u> B.S. Kwak et al., J. Appl. Phys., vol. 69, No. 2, pp.767-772 (1991).)

0008Layers should be formed at a higher speed so that a thin film capacitor can be manufactured at lower cost. When a dielectric thin layer is directly formed on a metal electrode substrate or a metal thin layer by a sputtering method or a CVD method, a layer with poor crystallinities (initial growth layer) is formed in the early stages of film growth. Due to the formation of the initial growth layer, the electric characteristics of the thin film capacitor are lowered as the capacity of the capacitor is increased by thinning the dielectric thin layer.

0009On the other hand, a plasma-enhanced CVD method making use of plasma activity and CVD reaction can form layers at low temperature and high speed by dissolving and enhancing source materials with an active plasma. (For instance, <u>see</u> E. Fujii et al., Jpn. J. Appl. Phys., vol. 32, No. 10B, pp.1527-1529 (1993) and A. Tomozawa et al., Journal of Magnetic Society of Japan, vol. 17, No. 2, pp.319-322 (1993).) However, like the sputtering method and the CVD method, the plasma-enhanced CVD method forms a layer with poor crystallinity (initial growth layer) in the early stages of film growth when a dielectric layer is directly formed on a metal electrode substrate or a metal thin layer.

0010Thus, it is the object of the invention to overcome the disadvantages in the prior art and to provide a small thin film capacitor with high capacitance and to provide a method of manufacturing the same.

0011This object has been accomplished by a thin film capacitor comprising:    a lower electrode directly or indirectly formed on a metal substrate (electrode) or a nonelectrode substrate;    a dielectric thin layer directly or indirectly formed on the surface of the lower electrode; and    an upper electrode formed on the dielectric thin layer.

0012The indirect formation of a lower electrode on a substrate, or a dielectric thin layer on the lower electrode is due to the formation of at least one intervening oxide thin layer in between; conversely, direct formation allows for no intervening layers.

0013The dielectric thin layer is a perovskite type dielectric thin layer oriented to (100) face. Anywhere below the dielectric thin layer, at least one of an NaCl type oxide thin layer oriented to (100) face and a spinel type oxide thin layer oriented to (100) face may additionally be formed. Hereinafter, the perovskite type oxide, NaCl type oxide and spinel type oxide is also called perovskite oxide, NaCl oxide and spinel oxide.

0014The orientations of the perovskite dielectric thin layer, the NaCl oxide thin layer and the spinel oxide thin layer to (100) face refer to the growth of the (100) face of a perovskite, NaCl and spinel crystal structure in a parallel orientation to the substrate surface.

0015It is preferable in this composition that at least one    of the NaCl oxide thin layer oriented to (100) face and the spinel oxide thin layer oriented to (100) face is formed between the lower electrode and the perovskite dielectric thin layer.

0016It is also preferable in this composition that the perovskite dielectric thin layer is (Ba_1-XSr_X)TiO₃ (0≦X≦1.0) or Pb{(Mg_1/3, Nb_2/3)_1-YTi_Y}O₃ (0≦Y≦1.0).

0017It is further preferable in this composition that the NaCl oxide thin layer is a magnesium oxide thin layer, a cobalt oxide thin layer, and/or a nickel oxide thin layer.

0018It is preferable in this composition that the spinel oxide thin layer is an oxide thin layer mainly comprising at least one of the elements iron, cobalt and aluminum.

0019It is also preferable in this composition that the thin film capacitor has the lower electrode directly formed on the nonelectrode substrate, the NaCl oxide thin layer oriented to (100) face on the lower electrode, the perovskite dielectric thin layer oriented to (100) face on the NaCl oxide thin layer, and the upper electrode on the perovskite dielectric thin layer.

0020It is preferable in this composition that the thin film capacitor has the lower electrode directly formed on the nonelectrode substrate, the spinel oxide thin layer oriented to (100) face on the lower electrode, the NaCl oxide thin layer oriented to (100) face on the spinel oxide thin layer, the perovskite dielectric thin layer oriented to (100) face on the NaCl oxide thin layer, and the upper electrode on the perovskite dielectric thin layer.

0021It is preferable in this composition that the thin film capacitor has the NaCl oxide thin layer oriented to (100) face on the nonelectrode substrate, the lower electrode on the NaCl oxide thin layer, the perovskite dielectric thin layer on the lower electrode, and the upper electrode on the perovskite dielectric thin layer.

0022It is also preferable in this composition that the thin film capacitor has the spinel oxide thin layer oriented to (100) face on the nonelectrode substrate, the lower electrode on the spinel oxide thin layer, the perovskite dielectric thin layer on the lower electrode, and the upper electrode on the perovskite dielectric thin layer.

0023A method of manufacturing the thin film capacitor of the invention comprises the steps of:    forming a lower electrode directly or indirectly on a metal substrate (electrode) or a nonelectrode substrate by a sputtering method, a vacuum deposition method, a CVD method, and/or a plasma-enhanced CVD method;    forming a dielectric thin layer directly or indirectly on the lower electrode; and    forming an upper electrode on the dielectric thin layer by a sputtering method, a vacuum deposition method, a CVD method, and/or a plasma-enhanced CVD method.

0024At least one of a NaCl oxide thin layer oriented to (100) face and a spinel oxide thin layer oriented to (100) face is formed on the top or the bottom surface of the lower electrode by a plasma-enhanced CVD method. A perovskite dielectric thin layer oriented to (100) face is formed below the upper electrode by a plasma-enhanced CVD method.

0025It is preferable in this method that at least one    of the NaCl oxide thin layer oriented to (100) face and the spinel oxide thin layer oriented to (100) face is formed on the lower electrode by a plasma-enhanced CVD method, and that the perovskite dielectric thin layer is formed on the NaCl oxide thin layer or the spinel oxide thin layer.

0026It is also preferable in this method that the perovskite dielectric thin layer is (Ba_1-XSr_X)TiO₃ (0≦X≦1.0) or Pb{(Mg_1/3, Nb_2/3)_1-YTi_Y}O₃ (0≦Y≦1.0).

0027It is preferable in this method that the NaCl oxide thin layer is a magnesium oxide thin layer, a cobalt oxide thin layer, and/or a nickel oxide thin layer.

0028It is preferable in this method that the spinel oxide thin layer is an oxide thin layer mainly comprising at least one of the elements iron, cobalt and aluminum.

0029The reduction of electric characteristics due to the presence of the initial growth layer in the early stages of film growth can be significantly prevented in this invention. A dielectric thin layer with good crystallinity can be formed at the early stages of film growth since the crystallinity of the layer is influenced by the crystal arrangements of a lower platinum layer oriented to (100) face, which is formed on the top or the bottom surface of a NaCl oxide thin layer oriented to (100) face or a spinel oxide thin layer oriented to (100) face. By using a plasma-enhanced CVD method, the oriented NaCl oxide thin layer or spinel oxide thin layer can be formed, regardless of the kinds of substrates. Therefore, it is not necessary to use an expensive monocrystal substrate in the invention. Since the invention applies a plasma-enhanced CVD method instead of a sputtering method or a CVD method to form a dielectric thin layer, the invention can significantly reduce the time and cost of forming a layer.

0030It is preferable in this method that the thickness of the perovskite dielectric thin layer is 0.1-3 µm, and that the thickness of the NaCl oxide thin layer and the spinel oxide thin layer is 20nm-3 µm.

0031Fig. 1 shows a cross-sectional view of a thin film capacitor of one embodiment of the invention.

0032Fig. 2 shows a schematic side view of a plasma-enhanced CVD apparatus of one embodiment of the invention.

0033Fig. 3 shows a cross-sectional view of a thin film capacitor of one embodiment of the invention.

0034Fig. 4 shows a cross-sectional view of a thin film capacitor of one embodiment of the invention.

0035Fig. 5 shows a cross-sectional view of a thin film capacitor of one embodiment of the invention.

0036Fig. 6 shows a cross-sectional view of a thin film capacitor of one embodiment of the invention.

0037Fig. 7 shows a perspective view of a thin film capacitor of one embodiment of the invention.

0038The invention will be explained specifically with reference to the following illustrative embodiments.

Example 1

0039Fig. 1 shows a thin film capacitor having a platinum layer 2 (metal electrode) on a Si substrate 1, a NiO layer 3 (NaCl oxide thin layer oriented to (100) face) on platinum layer 2, Ba_0.7Sr_0.3TiO₃ layer 4 (perovskite dielectric thin layer oriented to (100) face) on NiO layer 3 and a platinum layer 5 (metal electrode) on Ba_0.7Sr_0.3TiO₃ layer 4.

0040Inside a reaction chamber 6 shown in Fig. 2, an electrode 7 with a built-in substrate heater, to which a substrate rotating mechanism 12 is attached, is set opposite an electrode 8 to where a high frequency power source (of 13.56 MHz) 9 is connected. A substrate 10, which is Si substrate 1 formed with platinum layer 2 (metal electrode) on the surface, is attached to the bottom of electrode 7. An exhaust system 11 is fixed to one side of reaction chamber 6 to keep the chamber at low pressure.

0041Carburetors 13-18 containing materials of this example are connected to an argon bomb 31 containing carrier gas through valves 19-24. By opening and closing valves 25-30, the introduction of the gas along with carrier gas into reaction chamber 6 can be controlled. An oxygen bomb 32 is connected to a pipe which has its open end between electrode 8 and substrate 10.

0042More specifically, the thin film capacitor of this example was manufactured as follows.

0043A 100nm thick Pt layer was formed on the Si substrate by a sputtering treatment with a rf magnetron sputtering apparatus at 50W plasma power, 600°C substrate temperature and 1.4 Pa gas pressure for 14 minutes. The Si substrate formed with the Pt layer (Pt layer/Si substrate) was attached to the bottom of electrode 7 shown in Fig. 2, and heated to 600°C. An NaCl oxide thin layer and a perovskite dielectric thin layer were then formed on the surface of the Pt layer as follows:    inserting dehydrated nickel acetylacetonate, {Ni(acac)₂· H₂O, acac=C₅H₇O₂}, into carburetor 17 and heating it to 160°C;    inserting barium dipivaloylmethane, {Ba(DPM)₂, DPM=C₁₁H₁₉O₂}, into carburetor 13 and heating it to 235°C;    inserting strontium dipivaloylmethane, {Sr(DPM)₂}, into carburetor 14 and heating it to 240°C;    inserting titanium tetraisopropoxide,{Ti(C₃H₇O)₄}, into carburetor 15 and heating it to 40°C;    opening valves 23 and 29 to introduce vaporized nickel acethyl acetate along with argon carrier gas at a 20 SCCM (standard cubic centimeters per minute) flow rate and oxygen at a 10 SCCM flow rate to reaction chamber 6 depressurized with exhaust system 11;    generating a reaction at 5 Pa with 1.4W/cm² electric power plasma for one minute in reaction chamber 6, thereby forming a 20nm thick NiO layer on the surface of substrate 10, which was heated to 600°C and rotated 120 times per minute;    closing valves 23 and 29;    opening valves 19, 20, 21, 25, 26 and 27 to introduce vaporized barium dipivaloylmethane, strontium dipivaloylmethane and titanium tetraisopropoxide along with argon carrier gas, which entered into carburetors 13, 14 and 15 at 25 SCCM, 25 SCCM and 5 SCCM respectively, into reaction chamber 6;    reacting the gas with oxygen, which entered in the chamber at a 10 SCCM flow rate, with 1.4W/cm² electric power plasma at 7 Pa for 16 minutes in the chamber, thus forming a 2 µm thick Ba_1-XSr_XTiO₃ layer on the surface of the NiO layer (Ba_1-XSr_XTiO₃/NiO); and    forming a 100nm thick counter-electrode (platinum layer) on the Ba_1-XSr_XTiO₃/NiO by a sputtering method with 50W plasma power, at 600°C substrate temperature and gas pressure 1.5 Pa for 15 minutes.

0044As a result, a thin film capacitor (1-a) was manufactured.

0045As a comparison, another thin film capacitor (1-b) was manufactured by forming a Ba_1-XSr_XTiO₃ layer directly on a platinum layer, which was formed on a Si substrate by a plasma-enhanced CVD method, and then a counter-electrode (platinum) by a sputtering method.

0046The film compositions of thin film capacitors (1-a) and (1-b) were analyzed with an electron probe X-ray microanalyzer. According to the analyses, the dielectric layers of these capacitors were Ba_0.7Sr_0.3TiO₃.

0047The dielectric constant and dielectric loss (1kHz, 1V) of thin film capacitor (1-a) at room temperature measured by a LCR (inductance-capacitance-resistance) meter were 4,200 and 1.4%. Thin film capacitor (1-b), on the other hand, had a 2,800 dielectric constant and 1.8% dielectric loss. The insulation resistance of these capacitors was higher than 10⁹Ω · cm. Thin film capacitor (1-a) had 1.8MV/cm direct current breakdown voltage while the capacitor (1-b) had 1.4MV/cm.

0048A NiO layer, a Ba_0.7Sr_0.3TiO₃ layer, and a Ba_0.7Sr_0.3TiO₃/NiO film were individually formed on Si substrates. The crystal structures and the crystal orientations of the layers and the film were analyzed by reflection high-energy electron diffraction (RHEED) and X-ray diffraction. According to the analyses, the NiO layer was oriented to (100) face. The Ba_0.7Sr_0.3TiO₃ layer formed on the oriented NiO layer (Ba_0.7Sr_0.3TiO₃ layer of the Ba_0.7Sr_0.3TiO₃/NiO film) showed stronger (100) orientation and higher crystallinity than the Ba_0.7Sr_0.3TiO₃ layer formed directly on the substrate.

0049The cross section and the surface of the Ba_0.7Sr_0.3TiO₃/NiO film were observed with a high resolution scanning electron microscope. According to the observation, the Ba_0.7Sr_0.3TiO₃ layer of the film was significantly dense, and its particle size was about 0.20 µm.

0050Experiments were conducted by using not only Ni oxide layers but also a Co oxide layer or a Mg oxide layer as a NaCl oxide layer, and applying Ba_1-XSr_XTiO₃ layers of different compositions or a Pb{Mg_1/3, Nb_2/3)_1-YTi_YO₃ layer as a dielectric thin film. As clearly shown in the following Table 1, thin film capacitors having dielectric thin layers formed on NaCl oxide layers had better characteristics than the ones having dielectric thin layers formed directly on electrodes. <tables id="tabl0001" num="0001"><img file="EP0617439A2_D0001.tif" /></tables><tables id="tabl0002" num="0002"><img file="EP0617439A2_D0002.tif" /></tables>

0051β-diketone metal complex was used as a source material for a NaCl oxide layer. In order to form a perovskite dielectric thin layer, Ba(DPM), Sr(DPM)₂, Ti(C₃H₇O)₄ or Ti(DPM)₂·(C₃H₇O)₂, Pb(DPM)₂ or Pb(C₂H₅)₄, Mg(DPM)₂ or Mg(acac)₂, and Nb(C₂H₅O)₅ or Nb(DPM)₂·Cl₃ were used.

0052Besides Pt, nickel, palladium, silver/palladium alloy, copper or the like can be used for a metal electrode. The characteristics of a thin film capacitor are the same with any of the methods including a sputtering method, vacuum deposition method, CVD method and plasma-enhanced CVD method.

Example 2

0053Fig. 3 shows a thin film capacitor of this example having a platinum layer 36 (metal electrode), a Ni_0.5Fe_2.5O₄ layer 37 (spinel oxide thin layer oriented to (100) face), a Ba_0.8Sr_0.2TiO₃ layer 38 (perovskite dielectric thin layer oriented to (100) face) and a platinum layer 39 (metal electrode) sequentially laminated on the surface of a Si substrate 35.

0054More specifically, the thin film capacitor of this example was manufactured as follows.

0055A 100nm thick Pt layer was formed on Si substrate 35 by a sputtering treatment with a rf magnetron sputtering apparatus at 50W plasma power, 600°C substrate temperature and 1.4 Pa gas pressure for 14 minutes. Then, Si substrate 35 formed with the Pt layer (Pt layer/Si substrate) was attached to the bottom surface of electrode 7 shown in Fig. 2, and heated to 600°C. A NaCl oxide thin layer and a perovskite dielectric body thin layer were formed on the surface of Pt layer/Si substrate as follows:    inserting dehydrated nickel acetylacetonate, {Ni(acac)₂·H₂O, acac=C₅H₇O₂}, into a carburetor 17 and heating it to 160°C;    inserting iron acetylacetonate, {Fe(acac)₃}, into a carburetor 18 and heating it to 130°C;    inserting barium dipivaloylmethane, {Ba(DPM)₂, DPM=C₁₁H₁₉O₂}, into carburetor 13 and heating it to 235°C ;    inserting strontium dipivaloylmethane, {Sr(DPM)₂}, into carburetor 14 and heating it to 235°C;    inserting titanium tetraisopropoxide,{Ti(C₃H₇O)₄}, into carburetor 15 and heating it to 40°C;    opening valves 23, 24, 29 and 30 to introduce nickel acetylacetonate and iron acetylacetonate along with argon carrier gas, which entered into carburetors 17 and 18 at 20 and 30 SCCM flow rates respectively, to reaction chamber 6;    reacting vaporized nickel acetylacetonate and iron acetylacetonate with oxygen, which entered into reaction chamber 6 at a 15 SCCM flow rate, in the chamber depressurized by exhaust system 11;    carrying out the reaction with a 1.4W/cm² electric power plasma at 5 Pa for two minutes, thus forming a 50nm thick Ni_XFe_1-XO₄ layer (0≦X≦1.0) on the substrate, which was heated to 550°C and rotated 120 times per minute;    closing valves 23, 24, 29 and 30;    opening valves 19, 20, 21, 25, 26 and 27 to introduce vaporized barium dipivaloylmethane, strontium dipivaloylmethane and titanium tetraisopropoxide to reaction chamber 6 by argon carrier gas flowing into carburetors 13, 14 and 15 at 25, 30 and 5 SCCM flow rates respectively;    reacting the materials with oxygen of a 10 SCCM flow rate in reaction chamber 6 by a 1.4W/cm² electric power plasma at 7 Pa for 15 minutes, thus forming a 1.6 µm thick Ba_1-XSr_XTiO₃ layer on the surface of the Ni_XFe_3-XO₄ layer (Ba_1-XSr_XTiO₃/Ni_XFe_3-XO₄ film);    taking the substrate formed with the Ba_1-XSr_XTiO₃/Ni_XFe_3-XO₄ film out of the reaction vacuum chamber; and    forming a 100nm thick counter-electrode (platinum layer) on the substrate by a sputtering method at 60W plasma power, 550°C substrate temperature and 2 Pa gas pressure for 15 minutes, thus manufacturing a thin film capacitor (2-a).

0056On the surface of a platinum layer formed on a Si substrate, a Ba_1-XSr_XTiO₃ layer was formed directly by a plasma-enhanced CVD method, and a counter-electrode (platinum) was formed on the Ba_1-XSr_XTiO₃ layer by a sputtering method. As a result, a thin film capacitor (2-b) was manufactured.

0057The film compositions of thin film capacitors (2-a) and (2-b) were analyzed with an electron probe X-ray microanalyzer. According to the analyses, the foundation layer of the capacitor (2-a) was Ni_0.5Fe_2.5O₄, and the dielectric layers of capacitors (2-a) and (2-b) were Ba_0.8Sr_0.2TiO₃.

0058The dielectric constant and the dielectric loss (1kHz, 1V) of the capacitor (2-a) at room temperature measured by a LCR meter were 3,100 and 2.0% while those of the capacitor (2-b) were 2,800 and 2.9%. The insulation resistance of the capacitors (2-a) and (2-b) was above 10⁹Ω · cm. The direct current breakdown voltage of the capacitor (2-a) was 1.7 MV/cm while that of the capacitor (2-b) was 1.2 MV/cm.

0059A platinum layer, a Ni_0.5Fe_2.5O₄ layer, a Ba_0.8Sr_0.2TiO₃ layer, and a Ba_0.8Sr_0.2TiO₃/Ni_0.5Fe_2.5O₄ film were individually formed on Si substrates. Then, the crystal structures and the crystal orientations of the layers and the film were observed by RHEED and X-ray diffraction. According to the observation, the Ni_0.5Fe_2.5O₄ layer was oriented to (100) face. The Ba_0.8Sr_0.2TiO₃ layer formed on the oriented Ni_0.5Fe_2.5O₄ layer (Ba_0.8Sr_0.2TiO₃ layer of the Ba_0.8Sr_0.2TiO₃/Ni_0.5Fe_2.5O₄ film) had better (100) orientation and crystallinity than the Ba_0.8Sr_0.2TiO₃ layer directly formed on the substrate.

0060The cross section and the surface of the Ba_0.8Sr_0.2TiO₃/Ni_0.5Fe_2.5O₄ film were observed by a high resolution scanning electron microscope. According to the observation, the Ba_0.8Sr_0.2TiO₃ layer of the film was significantly dense, and the particle size was about 0.22 µm.

0061As shown in the following Table 2, thin film capacitors having dielectric thin layers formed on spinel oxide layers (foundation layers) showed better capacitor characteristics than the capacitors having dielectric thin layers formed directly on the electrodes. <tables id="tabl0003" num="0003"><img file="EP0617439A2_D0003.tif" /></tables><tables id="tabl0004" num="0004"><img file="EP0617439A2_D0004.tif" /></tables>

0062β-diketone metal complex was used as a source material for a spinel oxide layer. A perovskite dielectric layer was formed by using Ba(DPM)₂, Sr(DPM)₂, Ti(C₃H₇O)₄ or Ti(DPM)₂· (C₃H₇O)₂, Pb(DPM)₂ or Pb(C₂H₅)₄, Mg(DPM)₂ or Mg(acac)₂ and Nb(C₂H₅O)₅ or Nb(DPM)₂Cl₃.

0063In addition to Pt, other metals such as nickel, palladium, silver/palladium alloy, copper or the like can be used as a metal electrode. The properties of thin film capacitors are the same with any of these methods including a sputtering method, a vacuum deposition method, a CVD method, and a plasma-enhanced CVD method.

Example 3

0064Fig. 4 shows a thin film capacitor of this example having a NiO layer 42 (NaCl oxide thin layer oriented to (100) face), a platinum layer 43 (metal electrode), a Ba_0.5Sr_0.5TiO₃ layer 44 (perovskite dielectric thin layer oriented to (100) face) and a platinum layer 45 (metal electrode) sequentially laminated on a Si substrate 41.

0065More specifically, the thin film capacitor of this example were manufactured as follows.

0066Dehydrated nickel acetylacetonate, barium dipivaloylmethane, strontium dipivaloylmethane, and titanium tetraisopropoxide were inserted into carburetors 17, 13, 14 and 15 shown in Fig. 2, and heated to 160°C, 235°C, 240°C and 40°C respectively. After opening valves 23 and 29, vaporized nickel acetylacetonate along with argon carrier gas having a 20 SCCM flow rate and oxygen having a 10 SCCM flow rate entered into reaction chamber 6 depressurized by exhaust system 11. Reaction was carried out in the chamber with 1.4W/cm² electric power plasma, at 5 Pa for three minutes. As a result, a 60nm thick NiO layer was formed on substrate 10, which was heated to 600°C and rotated 120 times per minute. Then, valves 23 and 29 were closed. After cooling the NiO layer/Si substrate to room temperature, it was removed from the chamber. Due to a sputtering treatment with a rf magnetron sputtering apparatus at 40W plasma, 1.0 Pa gas pressure and 600°C substrate temperature for 20 minutes, a 80nm thick platinum thin layer was formed on the surface of the NiO layer (Pt layer/NiO layer/Si substrate).

0067The Pt layer/NiO layer/Si substrate was taken out of the sputtering apparatus after being cooled to room temperature. Then, it was fixed to the bottom surface of electrode 7 of the plasma-enhanced CVD device shown in Fig. 2. The pressure inside the reaction chamber was reduced by exhaust system 11, and the Pt layer/NiO layer/Si substrate was heated to 600°C in the chamber. After opening valves 19, 20, 21, 25, 26 and 27, vaporized barium dipivaloylmethane, strontium dipivaloylmethane and titanium tetraisopropoxide were introduced to the reaction chamber by argon carrier gas, which entered carburetors 13, 14 and 15 at 25 SCCM, 3 030 SCCM and 5 SCCM flow rates respectively. Oxygen was also introduced to reaction chamber 6 at a 10 SCCM flow rate, thus generating reaction with 1.4W/cm² electric power plasma at 7 Pa for 15 minutes in the chamber. As a result, a 2.2 µm thick Ba_1-XSr_XTiO₃ layer was formed on the surface of the Pt layer. The Si substrate formed with the Ba_1-XSr_XTiO₃/Pt/NiO film was removed from the vacuum reaction chamber, and a 100nm thick counter-electrode (platinum layer) was formed on the surface of the Si substrate by a sputtering treatment at 50W plasma power, 1.4 Pa gas pressure and 600°C substrate temperature for 15 minutes. As a result, a thin film capacitor (3-a) was manufactured.

0068A Pt layer was directly formed on a Si substrate by a sputtering method without forming a NiO layer between the Pt layer and the substrate. Then, a Ba_1-XSr_XTiO₃ layer was formed on the Pt layer by a plasma-enhanced CVD method, and a counter-electrode (platinum) was formed on the Ba_1-XSr_XTiO₃ layer by a sputtering method. Thus, a thin film capacitor (3-b) was manufactured.

0069According to an electron probe X-ray microanalysis (EPMA), the compositions of dielectric layers of the capacitors (3-a) and (3-b) were Ba_0.5Sr_0.5TiO₃. The dielectric constant and the dielectric loss (1kHz, 1V) of the capacitor (3-a) at room temperature were 4,000 and 1.7% respectively by a LCR meter, and those of the capacitor (3-b) were 2,100 and 1.8%. The insulation resistance of the capacitors (3-a) and (3-b) was above 10⁹Ω · cm. The direct current breakdown voltage of the capacitor (3-a) was 1.8MV/cm while that of the capacitor (3-b) was 1.5MV/cm.

0070A NiO layer, a Pt layer, a Pt/NiO film, a Ba_0.5Sr_0.5TiO₃ layer, and a Ba_0.5Sr_0.5TiO₃/Pt/NiO film were individually formed on Si substrates. The crystal compositions and the crystal orientations of the layers and the film were observed by RHEED and X-ray diffraction. According to the observation, it was found that the NiO layer was oriented to (100) face. The Pt layer, on the other hand, showed no orientation. The Pt layer of the Pt/NiO film was oriented to (100) face. The Ba_0.5Sr_0.5TiO₃ layer formed on the oriented Pt layer (Ba_0.5Sr_0.5TiO₃ layer of the Ba_0.5Sr_0.5TiO₃/Pt/NiO film) showed a stronger (100) orientation property and crystallinity than the Ba_0.5Sr_0.5TiO₃ layer directly formed on the substrate.

0071The cross section and the surface of the Ba_0.5Sr_0.5TiO₃/Pt/NiO film were observed with a high resolution scanning electron microscope. According to the observation, the Ba_0.5Sr_0.5TiO₃ layer of the film was highly dense, and the particle size was about 0.2 µm.

0072As shown in the following Table 3, thin film capacitors having dielectric thin layers formed on NaCl oxide layers (foundation layers) showed better characteristics than the capacitors having dielectric thin layers formed directly on the electrodes. <tables id="tabl0005" num="0005"><img file="EP0617439A2_D0005.tif" /></tables><tables id="tabl0006" num="0006"><img file="EP0617439A2_D0006.tif" /></tables>

0073β-diketone metal complex was used as a source material for a NaCl oxide layer. A perovskite dielectric thin layer was formed by using Ba(DPM)₂, Sr(DPM)₂, Ti(C₃H₇O)₄ or Ti(DPM)₂· (C₃H₇O)₂, Pb(DPM)₂ or Pb(C₂H₅)₄, Mg(DPM)₂ or Mg(acac)₂ and Nb(C₂H₅O)₅ or Nb(DPM)₂Cl₃.

0074Besides Pt, other metals such as nickel, palladium, silver/palladium alloy, copper or the like can be used for a metal electrode. The properties of thin film capacitors remain the same with any of methods including a sputtering method, a vacuum deposition method, a CVD method, and a plasma-enhanced CVD method.

Example 4

0075Fig. 5 shows a thin film capacitor of this example having a Ni_0.5Fe_2.5O₄ layer 52 (spinel oxide thin layer oriented to (100) face), a platinum layer 53 (metal electrode), a Ba_0.6Sr_0.4TiO₃ layer 54 (perovskite dielectric thin layer oriented to (100) face) and a platinum layer 55 (metal electrode) sequentially laminated on a Si substrate 51.

0076More specifically, the thin film capacitor was manufactured as follows.

0077Dehydrated nickel acetylacetonate {Ni(acac)₂·H₂O, acac=C₅H₇O₂}, iron acetylacetonate {Fe(acac)₃}, barium dipivaloylmethane {Ba(DPM)₂, DPM=C₁₁H₁₉O₂}, strontium dipivaloylmethane {Sr(DPM)₂} and titanium tetraisopropoxide {Ti(C₃H₇O)₄} were inserted into carburetors 17, 18, 13, 14 and 15 shown in Fig. 2, and heated to 160°C, 130°C, 235°C, 235°C and 40°C respectively. After opening valves 23, 24, 29 and 30, vaporized nickel acetylacetonate and iron acetylacetonate along with argon carrier gas, which entered carburetors 17 and 18 at 20SCCM and 30 SCCM flow rates respectively, and oxygen at a 15 SCCM flow rate entered into reaction chamber 6. The reaction was carried out for four minutes in the chamber, depressurized to 5 Pa, with 1.4W/cm² electric power plasma and at 550°C substrate temperature. The substrate was also rotated 120 times per minute. As a result, a 90nm thick Ni_XFe_3-XO₄ layer was formed on the substrate. Valves 23, 24, 29 and 30 were then closed.

0078After cooling the Si substrate formed with the Ni_XFe_3-XO₄ layer to room temperature, it was removed from the chamber. Due to a sputtering treatment with a rf magnetron sputtering apparatus at 40W plasma power, 1.0 Pa gas pressure and 600°C substrate temperature for 25 minutes, a 100nm thick Pt layer was formed on the surface of the Ni_XFe_3-XO₄ layer.

0079The Si substrate formed with Pt/Ni_XFe_3-XO₄ film was taken out of the sputtering apparatus after being cooled to room temperature. Then, the substrate was fixed to the bottom surface of electrode 7 shown in Fig. 2. The pressure inside the reaction chamber was reduced by exhaust system 11, and the Si substrate was heated to 600°C in the chamber. After opening valves 19, 20, 21, 25, 26 and 27, vaporized barium dipivaloylmethane, strontium dipivaloylmethane and titanium tetraisopropoxide were introduced to the reaction chamber by argon carrier gas, which entered carburetors 13, 14 and 15 at 25, 30 and 5 SCCM flow rates respectively. Oxygen was also introduced to reaction chamber 6 at a 10 SCCM flow rate, thus generating reaction at 1.4W/cm² electric power plasma and 7 Pa for 15 minutes in the chamber. As a result, about a 1.9 µm thick Ba_1-XSr_XTiO₃ layer was formed on the surface of the Pt/Ni_XFe_3-XO₄ film. The Si substrate formed with the Ba_1-XSr_XTiO₃/Pt/Ni_XFe_3-XO₄ film was taken out of the vacuum reaction chamber, and a 100nm thick counter-electrode (platinum layer) was formed on the surface of the Si substrate by a sputtering treatment at 50W plasma power, 1.4 Pa gas pressure and 600°C substrate temperature for 15 minutes. As a result, a thin film capacitor (4-a) was manufactured.

0080A Ba_1-XSr_XTiO₃ layer was directly formed on a Si substrate by a plasma-enhanced CVD method without forming a Pt/Ni_XFe_3-XO₄ layer in between. Then, a counter-electrode (platinum) was formed on the surface of the Ba_1-XSr_XTiO₃ layer by a sputtering method at 50W plasma power, 1.4Pa gas pressure and 600°C substrate temperature for 15 minutes. Thus, a thin film capacitor (4-b) was manufactured.

0081According to an EPMA, the compositions of dielectric layers of the capacitors (3-a) and (3-b) were Ba_0.6Sr_0.4TiO₃. The composition of the spinel oxide thin layer of the capacitor (4-a) was Ni_0.5Fe_2.5O₄.

0082The dielectric constant and the dielectric loss (1kHz, 1V) of the capacitor (4-a) at room temperature measured by a LCR meter were 4,100 and 1.8% and those of the capacitor (4-b) were 2,100 and 1.8%. The insulation resistance of the capacitors (4-a) and (4-b) was above 10⁹Ω · cm. The direct current breakdown voltage of the capacitor (4-a) was 1.7MV/cm while that of the capacitor (4-b) was 1.2MV/cm.

0083A Ni_0.5Fe_2.5O₄ layer, a Pt layer, a Ba_0.6Sr_0.4TiO₃ layer and a Ba_0.6Sr_0.4TiO₃/Pt/Ni_0.5Fe_2.5O₄ film were individually formed on Si substrates. The crystal compositions and the crystal orientations of the layers and the film were observed by RHEED and X-ray diffraction. According to the observation, it was found that the Ni_0.5Fe_2.5O₄ layer was oriented to (100) face. The Pt layer showed no orientation. The Ba_0.6Sr_0.4TiO₃ layer formed on the Pt/Ni_0.5Fe_2.5O₄ film (Ba_0.6Sr_0.4TiO₃ layer of the Ba_0.6Sr_0.4TiO₃/Pt/Ni_0.5Fe_2.5O₄ film) showed higher (100) orientation and crystallinity than the Ba_0.6Sr_0.4TiO₃ layer directly formed on the substrate surface.

0084The cross section and the surface of the Ba_0.6Sr_0.4TiO₃/Pt/Ni_0.5Fe_2.5O₄ film were observed by a high resolution scanning electron microscope. According to the observation, the Ba_0.6Sr_0.4TiO₃ layer of the film was highly dense, and the particle size was about 0.22 µm.

0085As shown in the following Table 4, thin film capacitors having dielectric thin layers formed on spinel oxide layers (foundation layers) showed better characteristics than the capacitors having dielectric thin layers formed directly on the electrodes. <tables id="tabl0007" num="0007"><img file="EP0617439A2_D0007.tif" /></tables><tables id="tabl0008" num="0008"><img file="EP0617439A2_D0008.tif" /></tables>

0086β-diketone metal complex was used as a source material for a spinel oxide layer. A perovskite dielectric thin layer was formed by using Ba(DPM)₂, Sr(DPM)₂, Ti(C₃H₇O)₄ or Ti(DPM)₂· (C₃H₇O)₂, Pb(DPM)₂ or Pb(C₂H₅)₄, Mg(DPM)₂ or Mg(acac)₂ and Nb(C₂H₅O)₅ or Nb(DPM)₂Cl₃.

0087In addition to Pt, other metals such as nickel, palladium, silver/palladium alloy, copper or the like can be used for a metal electrode. The properties of thin film capacitors are the same with any of the methods including a sputtering method, a vacuum deposition method, a CVD method, and a plasma-enhanced CVD method.

Example 5

0088As shown in Fig. 6, a NiO layer 62 (NaCl oxide thin layer oriented to (100) face), a Ba_0.7Sr_0.3TiO₃ layer 63 (perovskite dielectric thin layer oriented to (100) face) and a platinum layer 64 (metal electrode) were sequentially laminated on the surface of a platinum substrate 61.

0089More specifically, the thin film capacitor of this example was manufactured as follows. A platinum substrate (Pt layer/Si substrate) was attached to the bottom surface of electrode 7 shown in Fig. 2, and heated to 600°C. A NaCl oxide thin layer and a perovskite dielectric thin layer were formed on the surface of the Pt layer/Si substrate as follows:    inserting dehydrated nickel acetylacetonate, {Ni(acac)₂·H₂O, acac=C₅H₇O₂}, into a carburetor 17 and heating it to 160°C;    inserting barium dipivaloylmethane, {Ba(DPM)₂, DPM=C₁₁H₁₉O₂}, into carburetor 13 and heating it to 235°C;    inserting strontium dipivaloylmethane, {Sr(DPM)₂}, into carburetor 14 and heating it to 240°C;    inserting titanium tetraisopropoxide, {Ti(C₃H₇O)₄}, into carburetor 15 and heating it to 40°C;    opening valves 23 and 29 to introduce vaporized nickel acethyl acetate along with argon carrier gas, which entered into carburetors 17 at a 20 SCCM flow rate, to reaction chamber 6;    reacting vaporized nickel acethyl acetate with oxygen, which entered into reaction chamber 6 at a 10 SCCM flow rate, in the chamber depressurized by exhaust system 11;    carrying out the reaction with a 1.4W/cm² electric power plasma at 5 Pa for one minute, thus forming a 20nm thick NiO layer on substrate 10, which was heated to 600°C and rotated 120 times per minute;    closing valves 23 and 29;    opening valves 19, 20, 21, 25, 26 and 27 to introduce vaporized barium dipivaloylmethane, strontium dipivaloylmethane and titanium tetraisopropoxide to reaction chamber 6 by argon carrier gas flowing into carburetors 13, 14 and 15 at 25, 25 and 5 SCCM flow rates respectively;    reacting the materials with oxygen of a 10 SCCM flow rate in reaction chamber 6 by a 1.4W/cm² electric power plasma at 7 Pa for 16 minutes, thus forming a 2 µm thick Ba_1-XSr_XTiO₃ layer on the surface of the NiO layer (Ba_1-XSr_XTiO₃/NiO film);    taking the substrate formed with the Ba_1-XSr_XTiO₃/NiO film out of the reaction vacuum chamber; and    forming a 100nm thick counter electrode (platinum layer) on the substrate by a sputtering method at a 50W plasma power, 600°C substrate temperature and 1.5 Pa gas pressure for 15 minutes, thus manufacturing a thin film capacitor (6-a).

0090As a comparison, a Ba_1-XSr_XTiO₃ layer was formed directly on a Si substrate by a plasma-enhanced CVD method, and a counter-electrode (platinum) was formed on the Ba_1-XSr_XTiO₃ layer by a sputtering method. As a result, a thin film capacitor (6-b) was manufactured.

0091The film compositions of thin film capacitors (6-a) and (6-b) were analyzed with an electron probe X-ray microanalyzer. According to the analyses, the dielectric layers of capacitors (6-a) and (6-b) were Ba_0.7Sr_0.3TiO₃.

0092The dielectric constant and the dielectric loss (1kHz, 1V) of the capacitor (6-a) at room temperature measured by a LCR meter were 4,300 and 1.5% respectively while those of the capacitor (6-b) were 2,700 and 1.9%. The insulation resistance of the capacitors (6-a) and (6-b) was above 10⁹Ω · cm. The direct current breakdown voltage of the capacitor (6-a) was 1.9 MV/cm while that of the capacitor (6-b) was 1.6 MV/cm.

0093A NiO layer, a Ba_0.7Sr_0.3TiO₃ layer and a Ba_0.7Sr_0.3TiO₃/NiO film were individually formed on platinum substrates. Then, the crystal structures and the crystal orientations of the layers and the film were observed by RHEED and X-ray diffraction. According to the observation, the NiO layer was oriented to (100) face. The Ba_0.7Sr_0.3TiO₃ layer formed on the oriented NiO layer (Ba_0.7Sr_0.3TiO₃ layer of the Ba_0.7Sr_0.3TiO₃/NiO film) had better (100) orientation and crystallinity than the Ba_0.7Sr_0.3TiO₃ layer directly formed on the substrate.

0094The cross section and the surface of the Ba_0.7Sr_0.3TiO₃/NiO film were observed with a high resolution scanning electron microscope. According to the observation, the Ba_0.7Sr_0.3TiO₃ layer of the film was significantly dense, and the particle size was about 0.20 µm.

0095As shown in the following Table 5, thin film capacitors having dielectric thin layers formed on NaCl oxide layers (foundation layers) showed better capacitor characteristics than the capacitors having dielectric thin layers formed directly on the electrodes. <tables id="tabl0009" num="0009"><img file="EP0617439A2_D0009.tif" /></tables><tables id="tabl0010" num="0010"><img file="EP0617439A2_D0010.tif" /></tables>

0096β-diketone metal complex was used as a source material for a NaCl oxide layer and a spinel oxide layer. A perovskite dielectric layer was formed by using Ba(DPM)₂, Sr(DPM)₂, Ti(C₃H₇O)₄ or Ti(DPM)₂·(C₃H₇O)₂, Pb(DPM)₂ or Pb(C₂H₅)₄, Mg(DPM)₂ or Mg(acac)₂ and Nb(C₂H₅O)₅ or Nb(DPM)₂Cl₃.

0097In addition to Pt, other metals such as nickel, palladium, silver/palladium alloy, copper or the like can be used as the metal electrode. The properties of thin film capacitors are the same with any of these methods including a sputtering method, a vacuum deposition method, a CVD method, and a plasma-enhanced CVD method.

0098Fig. 7 shows a perspective view of a thin film capacitor. This thin film capacitor was manufactured by the method of this example as described above. Then, the substrate was cut to 3.3mm × 1.6mm; metal cables 75 were soldered to the surface of each metal electrode; and epoxy resin 76 was molded over the entire surface. The capacity of this thin film capacitor was 100pF. In Fig. 7, 71 indicates a metal electrode (platinum substrate); 72 shows a NaCl oxide thin layer or a spinel oxide thin layer; 73 is a perovskite dielectric thin layer; and 74 indicates a metal electrode (platinum layer).

0099The invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The embodiments disclosed in this application are to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are intended to be embraced therein.