EP0488264A3

Method of manufacturing a semiconductor device with improved electromigration resistance

Abstract

To improve electromigration resistance and stress migration resistance, when a film is formed by depositing Al or Al alloy on a semiconductor substrate (11), the film (13, 14) is formed stepwise by stepwise changing the heating temperature of the semiconductor substrate at at least two stages.

EP0488264A3, drawing sheet 1
Sheet 1 of 1

Term

Term ended

Projected expiry passed 28 November 2011, 14.8 years ago.

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1 sheet

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