EP0488264A3
Method of manufacturing a semiconductor device with improved electromigration resistance
Abstract
To improve electromigration resistance and stress migration resistance, when a film is formed by depositing Al or Al alloy on a semiconductor substrate (11), the film (13, 14) is formed stepwise by stepwise changing the heating temperature of the semiconductor substrate at at least two stages.

Term
Term ended
Projected expiry passed 28 November 2011, 14.8 years ago.
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1 sheet
Sheet 1
Every citation, both ways
| Document | Relation | Office | Category | Cited during |
|---|---|---|---|---|
| EP0107259A2 | Cites | European Patent Office (EPO) | X | Search report |
| EP0451571A2 | Cites | European Patent Office (EPO) | XP | Search report |
| US4837183A | Cites | United States of America | A | Search report |
| SOLID STATE TECHNOLOGY. vol. 33, no. 3, March 1990, WASHINGTON US pages 73 - 79; D. PRAMANIK & A.N. SAXENA: 'ALUMINIUM METALLISATION FOR ULSI' | Non-patent | – | – | Search report |
5 members in 4 offices; this record represents the family
Priority claims4
| Document | Office | Kind | Date |
|---|---|---|---|
| 33606290 | Japan | – | |
| 33606290 | Japan | A | |
| 29603591 | Japan | – | |
| 29603591 | Japan | A |
Members5
| Document | Office | Kind | |
|---|---|---|---|
| EP0488264A2 | European Patent Office (EPO) | A2 | |
| EP0488264A3This record | European Patent Office (EPO) | A3 | |
| JPH04363024A | Japan | A | |
| US5407863A | United States of America | A | |
| KR950014267B1 | Republic of Korea | B1 |
13 legal events, as the office reported them to INPADOC
Over the term
Point at a mark for the eventEvents
| Event | Code | |
|---|---|---|
| Appeal reference modifiedAppealORIGINAL CODE: EPIDOSCREFNEAPAF | APAF | |
| Application refused18R | 18R | |
| Information on the status of an ep patent application or granted ep patentGrantedSTATUS: THE APPLICATION HAS BEEN REFUSEDSTAA | STAA | |
| Appeal reference recordedAppealORIGINAL CODE: EPIDOS REFNEAPAD | APAD | |
| Appeal reference recordedAppealORIGINAL CODE: EPIDOS REFNEAPAD | APAD | |
| Appeal dossier modifiedAppealORIGINAL CODE: EPIDOS NOAPEAPAB | APAB | |
| Appeal dossier modifiedAppealORIGINAL CODE: EPIDOS NOAPEAPAB | APAB | |
| First examination report despatched17Q | 17Q | |
| Designated contracting statesAK | AK | |
| Request for examination filed17P | 17P | |
| Designated contracting statesAK | AK | |
| Search report despatchedORIGINAL CODE: 0009013PUAL | PUAL | |
| Public reference made under article 153(3) epc to a published international application that has entered the european phaseORIGINAL CODE: 0009012PUAI | PUAI |
Numbers
- Publication
- 0488264
- Application
- 911203545
Titles3
- German
- Verfahren zum Herstellen einer Halbleitervorrichtung mit verbesserten Elektromigrationswiderstand
- English
- Method of manufacturing a semiconductor device with improved electromigration resistance
- French
- Méthode de fabrication d'un dispositif semi-conducteur à résistance contre l'électromigration améliorées
Classification
- CPC, 4
- H10P14/44
- Y10S438/927
- H10P14/412
- H10W20/4405
- IPC, 3
- H01L23 52
- H01L23 532
- H10P14 40
Designated states1
- Contracting states, 1
- United Kingdom