Nova Patents
EP0484665A3

Pattern shift measuring method

Abstract

A method of measuring pattern shift on a diffused semiconductor wafer after an epitaxial process comprising: measuring a ratio between the line width of a linear pattern vertical to an orientation flat and line width of a linear pattern parallel to the orientation flat to determine the shift between these patterns.

EP0484665A3, drawing sheet 1
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Term

Term ended

Projected expiry passed 23 September 2011, 15 years ago.

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