Laser apparatus with means for detecting the laser power level

The present invention relates generally to lasers. More particularly, the invention relates to laser apparatus with means for detecting the level of laser power output.

One technique used to detect the power of a laser is an in-line external detector which interrupts light that emanates directly from the front or back facet of the laser. In the case of an independently addressable laser array, this in-line detector monitors the light emanating from the facets of all of the lasers in the array. The result of such a detection technique is that independent power control of each laser element is not possible. Therefore complicated methods involving the use of imaging optics to split light off from the forward or backward laser beam have been resorted to. However, the result is a cumbersome, inelegant, and delicate package that is not suitable for use in more integrated situations. Other disadvantages of in- line detection techniques exist. For example, the operation of the laser is directly interfered with as part of the beam must be channelled into the detector. This translates into reduced output efficiency.

In addition to in-line detection techniques, there have also been detectors implemented with reflectors to emit light from the laser in a direction vertical to the horizontal active layer of a semiconductor laser. For example, Scifres, et al., U. S. Patent No. 4,633,476, discloses internal mirrors placed in the light path of the laser causing light to be reflected upwards and out of the semiconductor substrate. The light is then detected at the surface of the semiconductor device where it can be used to provide data regarding the power level of the laser.

Kobayashi, U. S. Patent No. 4,674,100 is similar to Scifres in that it includes a detector which receives light diffracted from within the laser and then uses the level of this light to determine the power of the laser. However, like Scifres, Kobayashi provides the detector in a different level of the semiconductor material than that of the laser. Therefore, the laser and the detector have differing layer designs and also must be fabricated at different times.

JP-A-61 168 282 describes the use of the cleaved surface of a semiconductor as a mirror of a resonator by disposing the resonator of a laser and a photodetector in parallel. Most of the light enclosed in an active layer is propagated and emitted to a resonator direction, but part is propagated to both sides of the resonator.

JP-A-59 048 975 describes an integrated laser and photodetector, wherein a grating couples light from the laser laterally into the photodetector.

The present invention provides apparatus for detecting single or multistriped laser outputs. A light detector is integrated in the same semiconductor substrate, preferably in the same semiconductor layer, as the laser itself. Light leaking laterally, or at least in a non-axial direction, from the laser cavity is detected by the detector. The data collected by the detector can then be used to monitor the output of the laser. Since the photon energy of the laser light is always slightly larger than the band gap of the material in the active region of the laser, and the active region of the detector is back biased, the laser and the detector can have identical layer design. This permits the laser and the detector to be formed simultaneously in a semiconductor device. A typical technique used in fabricating the semiconductor to contain both a laser and a detector is impurity induced disordering. This technique is described in Thornton, U.S. Patent No. 4,802,182.

In particular the present invention provides an apparatus for providing a laser and detecting the output power of the laser, comprising: <ul id="ul0001" list-style="none" compact="compact"><li>a semiconductor substrate;</li><li>a plurality of semiconductor heterostructure layers formed on said substrate;</li><li>at least one first active region formed in at least one of said plurality of semiconductor heterostructure layers, said at least one first active region being capable of axial light amplification and lasing beam propagation under lasing conditions and biased to provide a laser; wherein light propogates along a first path, said first path including a perturbation providing controlled leakage of light from the laser in a lateral direction towards a second active region (19); and</li><li>at least one second active region formed in at least one of said plurality of semiconductor heterostructure layers substantially close to said at least one first active region, said at least one second active region being biased to define a detector for detecting an amount of light emanating in the lateral direction from the laser, the detector being within the evanescent field of the optical mode produced at the perturbation in the laser waveguide.</li></ul>

In a further aspect of the present invention, a semiconductor substrate contains multiple lasers. Each laser is provided with a separate detector. This is possible because the detector element is small enough to be included with each laser element in an independently adjustable array. This allows independent control of each laser by a feedback loop connected to its corresponding detector.

For a more complete understanding of the invention, reference should be made to the ensuing detailed description of embodiments of the invention taken in conjunction with the accompanying drawings, in which: <ul id="ul0002" list-style="none" compact="compact"><li>Fig. 1 is a diagram showing a top-down view of a laser and a detector on a semiconductor substrate,</li><li>Fig. 2 is a diagram showing a top-down view of multiple lasers with corresponding detectors on a single semiconductor substrate;</li><li>Fig. 3 is a diagram showing a top-down view of a laser and its corresponding detector wherein the laser contains a square indentation;</li><li>Fig. 4A is a diagram showing a top-down view of a laser and its corresponding detector wherein the laser contains a square indentation and the corresponding detector contains a square protrusion which fits within the square indentation of the laser.</li><li>Fig. 4B is a diagram showing a top-down view of a plurality of lasers and their corresponding detectors wherein the plurality of lasers contain a square indentation and the corresponding detectors contain a square protrusion which fits within the square indentation of the plurality of lasers;</li><li>Fig. 5 is a diagram showing a top-down view of a laser and its corresponding detector on a semiconductor substrate wherein the laser contains a narrowed section and the detector contains a squared protrusion fitting within one side of narrowed section of the laser; and</li><li>Fig. 6 is a circuit diagram of the feedback circuit connected between the laser cavity and the detector cavity for controlling the output of the laser.</li></ul>

Fig. 1 is a diagram of a semiconductor substrate 11 having a layer containing a laser cavity 13 with a front facet 15 and a back facet 17 through which light is emitted. In the same layer on semiconductor 11, and running parallel to laser cavity 13, is a detector cavity 19. Laser cavity 13 and detector cavity 19 are active regions in the structure on semiconductor substrate 11. These cavities are typically formed on semiconductor substrate 11 through the use of a technique known as impurity induced disordering described in Thornton US Patent No. 4 802 182, mentioned above. Laser cavity 13 is then forward biased until laser operation occurs and detector cavity 19 is reverse biased to act as a light detector.

In operation, most of the light flowing through laser cavity 13 emanates from front facet 15 and rear facet 17 of laser 13. However, a small amount of evanescent light from laser cavity 13 enters detector cavity 19. Therefore, detector 19 can be used to detect and with external circuitry (not shown) control the output power of laser cavity 13.

Laser cavity 13 and detector cavity 19 are parallel regions on semiconductor substrate 11. These regions should be placed at a distance which depends on the modal function created in laser cavity 13. Another factor which must be considered in determining the distance between laser cavity 13 and detector cavity 19 is the length of detector cavity 19. This factor is important because the longer the length of detector cavity 19, the more light absorbed from laser cavity 13. Therefore, if detector cavity 19 is lengthened, the amount of light emanating from laser cavity 13 through front facet 15 and rear facet 17 is reduced for the same current. This effect can be limited by moving detector cavity 19 to a greater distance away from laser cavity 13. Typically, detector cavity 19 should be placed at a point such that a one percent light detection is achieved. In practice, a preferred distance between laser cavity 13 and detector cavity 19 has been found to be between one and two micrometers.

Fig. 2 is a diagram showing semiconductor substrate 11 containing multiple laser cavities 13A-13D, along with corresponding detector cavities 19A-19D. Each laser cavity/detector cavity pair works similarly to the laser cavity/detector cavity pair shown in Fig. 1.

Figs. 3, 4A and 4B each show semiconductor substrate 11 having laser cavity 13 and detector cavity 19 formed thereon. In each of these figures, laser cavity 13 contains a perturbation 25, which takes the form of an indentation or a narrowing in laser cavity 13. In each case, detector cavity 19 has a shape complementary to, and aligned with, the indentation/narrowing in the laser cavity: in Fig. 3, the detector cavity has a rectangular shape and in Figs 4A and 4B it takes a roughly "T" shaped planform. In each figure, the modal field of the light transmitted through laser cavity 13 is altered by the perturbation and detected by detector cavity 19. In Fig. 4B a multiplicity of laser cavities 13A-C and corresponding detector cavities 19A-C are shown.

Fig. 5 illustrates an embodiment of the invention in which a waveguide having weaker optical confinement is introduced as the perturbation 25 in laser cavity 13. By making the composition of the active layer approach the concentration of the cladding layer, the light can be altered as it moves through perturbation 25. This enhances the light in the detector by reducing the refraction index and makes it easier to detect in detector cavity 19. Reduction in the refraction index is achieved by decreasing the concentration of aluminium in the active layer during formation. A similar effect can be achieved by narrowing the waveguide in perturbation 25.

Fig. 6 is a circuit diagram of the feedback circuit used to detect the output of the laser and adjust it to a desired level. Laser cavity 13 and detector cavity 19 are the same as those shown in the above-discussed figures. An amplifier 51 amplifies the detected output level and feeds it to a differential amplifier 53. The signal is compared to a set control signal input on output power set control line 55. The difference between the two signals is input to a gain control 57. Gain control 57 sets an adjustment signal which is fed through a current amplifier 59 for driving laser 13. Input modulation line 61 is used to adjust the current level in response to the information input signal.

It will be apparent that various changes can be made to the embodiments described above. For instance, the orientation and positioning of laser cavities 13 and detection cavities 19 may assume various configurations. Further, the shape and length of perturbation 25 and detection cavity 19 may assume an unlimited number of permutations. Further, the spacing of laser cavity 13 from detection cavity 19 is not fixed to one measurement.

The following advantages are offered by the embodiments of the invention described above. First, the laser and the detector can be formed simultaneously on the same semiconductor substrate. This is because the detector and the laser are formed in the same layer with identical layer design. A second advantage is that the design of the detector has a minimal effect on the performance of the laser itself. Since there is no need for the detector to be placed in line where it can obstruct the ultimate path of the light, the detector does not interfere with the beam being provided by the laser. Third, there is no need to implement imaging optics as required in other laser detectors, which may be cumbersome, inelegant and delicate and which may not be suitable for use in integrated circuits. Finally, in a semiconductor device containing multiple lasers, each laser is provided with a separate detector.