Semiconductor laser and manufacture method therefor.

[Technical Field]

0001This invention relates to a semiconductor laser which is used as an electro-optic convertor and the manufacture method therefor.

0002This invention is suitable for use as a light source for optical communication systems, optical information processing systems, optical memory systems, optical measur­ing instruments and other opto-electronic devices.

[Background Technology]

0003There is widely known a distributed feedback semiconductor laser which causes its active layer to generate stimulated emissions by light distribution feedback with a diffraction grating formed close to said active layer. Since the distributed feedback semiconductor laser relatively easily provides stimulated emission with excellent lasing spectral characteristics, and the lasing wavelength can be controlled by the pitch of the diffraction grating, its use is promising as the light source of long-distance and large-capacity optical communication systems and other opto-electronic devices which either utilize single mode optical fibers or wavelength division multiplexing.

0004Light distributed feedback in the conventional lasers is given by forming a transparent light guiding layer proximal to an active layer, forming corrugated shapes having a cross section substantially similar to triangular waves on the other surface thereof than the side near the active layer, and changing the apparent refractive index of the guiding layer periodically. The structure is popularly known and is described, for instance, in Denshi-Joho-­Tsushin Handbook, pp. 984 - 985, a general handbook published by Ohm Sha, Japan 1988. The semiconductor laser of this structure, however, cannot conduct adequate feedback in optical phase in respect of lights of Bragg wavelength generated corresponding to the period of changes in layer thickness in the light guiding layer to thereby cause stop bands in the zone of Bragg wavelength. FIG. 1 shows this phenomenon.

0005More specifically, FIG. 1 is a graph which plots lasing wavelength in normalized value on the horizontal axis and spectral intensity in relative value on the vertical axis. The graph shows that there is a phenomenon which causes two isolated longitudinal mode lasings at two wavelengths substantially symmetrical on both sides of the Bragg wavelength. There has been empirically known from various tests that it is difficult to design and manufacture practical semiconductor lasers in a manner to cause either one of the two longitudinal mode lasings or to preset either one of them. Production yield cannot be increased due to the above reason.

0006In order to solve the problem, there has been proposed a structure which shifts the iffraction grating in phase by one quarter of a wavelength at about the center thereof. This increases the difference in gain between two longitudinal modes at two wavelengths to thereby enable setting the lasing mode at one. But the structure requires a special manufacture process because of the complicated form of diffraction grating. The structure is further detrimental as it needs anti-reflection coating on the facet of a laser diode to thereby increase the number of manufacture steps and push up the production cost. The semiconductor laser of this sturucture is also described in said handbook.

0007"Coupled-Wave Theory of distributed Feedback Lasers" by <u style="single">Kogelnik</u> et al., Journal of Applied Physics, 1972, vol. 43, pp. 2327 - 2335 presents a basic theory that although a stop band is created in Bragg wavelength zone when light distributed feedback is given by index coupling as above, if the light distributed feedback is conducted by gain coupling based on periodic perturbation of gain coefficient longitudinal mode lasing of completely single wavelength should be obtained without generating any stop band. The paper is a theoretical one and gives no description on the structure of semiconductor lasers nor the manufacture method to embody such gain coupling.

0008Some of the present inventors filed a patent appli­cation for a novel semiconductor laser, an application of the basic theory by said <u style="single">Kogelnik</u> et al. on July 30, 1988 (JPA Sho 63-189593) (referred to as a prior application herein)

0009The technology of the prior application teaches to provide an untransparent semiconductor layer near an active layer, form diffraction grating on the untransparent layer and give distributed feedback based on periodic perturbation of loss coefficient of the untransparent layer.

0010The above structure embodies the device which satisfies the theory of <u style="single">Kogelnik</u> et al., but as this method forms an untransparent layer near the active layer for feedback, and as the untransparent layer has absorption loss of energy, the energy required for generation of stimulated emission becomes inconveniently large.

0011It would be optimal to form a diffraction grating on one of the surfaces of the active layer and to change the thickness of the layer in accordance with the corrugation of the diffraction grating in the direction of the light waves in order to give distributed feedback in a manner to cause periodic perturbation of gain coefficients based on the above theory. A paper by Nakamura et al. entitled "GaAs-GaAlAs Doublehetero Structure Distributed Feedback Diode Lasers", Applied Physics Letters, 1974, vol. 25, pp. 487 - 488, reports on the result of experiment to etch diffraction grating directly on the active layer of a semiconductor laser, although it was not for the purpose of realizing gain coupling. However, when the active layer is etched to have a corrugation as diffraction grating, a series of processes for forming the corrugation, i.e. suspending the growth, etching the layer, and resuming the growth, will cause defects in the semiconductor crystal in the layer. The defect in the semiconductor crystal increases non-light-emitting recombination to remarkably reduce the stimulated emission, thus producing semiconductor laser of inferior efficiency which is not practically usable.

0012This invention was conceived in order to eliminate such defects encountered in the prior art, and aims to realize a semiconductor laser which can give light distributed feedback by gain coupling mainly based on the periodic perturbation of gain coefficients in accordance with the theory by <u style="single">Kogelnik</u> et al. instead of index coupling which tends to entail formation of stop bands. This invention also aims to embody a semiconductor laser without loss in energy absorption as is caused in the untransparent layer in the prior application and further without defects in the semiconductor crystal structure even if the active layer is directly formed with diffraction grating.

0013More particularly, this invention aims to provide a semiconductor laser which has a stable and single lasing mode instead of two lasing modes, which is capable or setting the single lasing mode in advance, is simple in structure and manufacture process, is expected to have an excellent production yield, is low in cost, has no loss in energy absorption unlike the prior application laser, is free of defects in semiconductor crystal structure which is to become an active layer even if diffraction grating is formed thereon, and which can efficiently produce stimulated emission, and a manufacture method therefor.

[Disclosure of the Invention]

0014This invention is characterized by the steps of etching a corrugation corresponding to a diffraction grating on the surface of a semiconductor layer which will become a substrate for growing an active layer, growing first a thin semiconductor buffer layer on the surface of said semiconductor layer maintaining the corrugation intact, and growing an active layer on the surface thereof in a manner to fill the dents thereon as much as possible.

0015More particularly, the first aspect of this inven­tion relates to the structure of a semiconductor laser wherein one surface of an active layer is formed with a corrugation as diffraction grating, a thin semi­conductor buffer layer is formed in contact with the one surface of the active layer, the shape of the buffer layer is substantially congruent with the corrugated forms of its both sides.

0016The manufacture process would be simpler if the thickness of the buffer layer is made uniform so that the corrugated form on both surfaces thereof are parallel to each other, but they do not have to be necessarily precisely parallel to each other.

0017The active layer is grown upon the corrugation on the buffer layer in a manner to fill in the dents, and as a result, the other surface of the active layer is formed flat. However, the other surface of the active layer does not have to be necessarily precisely flat but may be left with slight corrugation from the buffer layer.

0018The active layer may be a single quantum well layer or a multi quantum well layer. In such a case, the active layer has a structure formed with a quantum well layer sandwiched with graded index layers (GRIN-layer or GI-­layer) from both sides, for instance. As epitaxial growth rate is larger in dents than in projections, the width of a quantum well on the dents becomes relatively larger than that on projections consequently.

0019The second aspect of this inventon lies in the manufacture method of a semiconductor laser which is characterized by the production steps of etching a corrugation with dents and projections corresponding to a diffraction grating on a surface of a semiconductor layer, growing a thin buffer layer on the surface of the semiconductor layer while reserving the corrugated form thereof, and growing an active layer upon the corrugation in a manner to fill in the dents for emission of stimulated light.

0020More particularly, according to this invention, d iffraction grating is formed on the active layer itself via a buffer layer so as to form the active layer with distribution of the thickness in accordance with the corrugated form thereof. Moreover as the active layer is not directly etched to form the corrugated pattern , the active layer is free of defects latent to the semiconductor crystal structure. Therefore, the thickness of the buffer layer may be determined to be sufficiently thin so that the corrugation on the surface which contacts with the active layer may serve as a diffraction grating but thick enough to cover the defects of the crystal structure on the semiconductor surface. The thickness thereof may be 0.01 - 1 µm.

0021The method to control the growth rate may be one of the methods suitable to grow a buffer layer with the corrugated pattern thereof maintained and to grow an active layer in a manner to fill in the dents of the buffer layer.

0022The process to grow a buffer layer is preferably the metal organic vapor phase epitaxy (MOVPE) but is not limited to it. The present inventors noted the efficacy of the molecular beam epitaxy method (MBE) and are now in process of study. There may be various other methods to grow a layer with its corrugation preserved, and any one of them may realize this invention.

0023The corrugated pattern corresponding to the diffraction grating may be directly etched on a cladding layer which is provided to enclose light or etched on another semiconductor layer provided on a surface of the cladding layer.

0024The method to etch the corrugated pattern on said semi­conductor layer may preferably be the interference exposure method or electron beam exposure method and anisotropic etching method.

0025It is preferably to emphasize the dents and the projections of the corrugation in growing the buffer layer by setting a condition under which there is no growth or less growth on, for instance, {111} B face.

0026The third aspect of this invention relates to the structure of the semiconductor laser wherein one surface of an active layer is formed with a corrugated pattern as diffraction grating, a thin semiconductor buffer layer is formed contacting with the corrugation formed on the one surface of the active layer, and the buffer layer has a structure epitaxially grown to transfer the corrugated pattern formed by etching on the semiconductor layer with which the other surface of the buffer layer contacts to the corrugated pattern formed on said active layer.

0027The fourth aspect of this invention relates to a manufacture method of semiconductor laser which includes a step of etching a corrugated pattern corresponding to a diffraction grating on a surface of a semiconductor layer, a step of growing a thin buffer layer on the surface of the semiconductor layer with the corrugated pattern maintained as they are, and a step of growing an active layer for stimulated emission upon the corrugated pattern appearing on the buffer layer using the patterns as a diffraction grating in a manner to fill in the dents of the patterns, and which is characterized in that the step of growing the buffer layer includes a step of growing a first buffer layer in a manner to reshape the patterns etched on the semiconductor surface so as to emphasize the dent/­projection patterns and a step of growing a second buffer layer upon the first buffer layer in the form suitable for a diffraction grating formed on a surface of the active layer.

0028The active layer itself may be formed with diffractive grating by forming the active layer with a quantum well layer sandwiched therein and disordering the quantum well layer in a period corresponding to the active grating.

0029The fifth aspect of this invention relates to a semiconductor laser having the structure comprising an active layer for stimulated emission and a diffraction grating provided on the active layer for light distributed feedback, which is characterized in that said active layer includes a quantum well layer, and said diffraction grating is produced as the result of disordering of said quantum well layer in accordance with the period of the diffraction grating to eliminate the same.

0030The term disordering herein means homogenization of a locally non-uniform composition in a substance by mutual diffusion, and the process may remarkably be accelerated by ion implantation or other methods.

0031The sixth aspect of this invention relates to a manufacture method for the semiconductor laser comprising a first step for growing a first cladding layer, a second step for growing an active layer on the first cladding layer, and a third step for growing a second cladding layer upon the active layer, the second step including the step of forming an active layer having a quantum well layer, which is characterized in that between said second and third steps there is provided a step of disordering said quantum well layer in accordance with the period of diffraction grating.

0032Said disordering step comprises a step of forming masks over the locations on the active layer formed by the second step in accordance with the period and a step of ion implantation from above the active layer which is partly covered with the masks.

0033The disordering step may be conducted by a method of emitting focused ion beams (FIB) intermittently in accordance with the period of the diffraction grating from above the active layer formed by the second step.

0034The semiconductor laser according to any one of the first to fourth aspects mentioned above periodically changes the thickness of the active layer in the direction of advancing light waves in the corrugated pattern with dents and projections of the diffraction grating. The semiconductor laser according to the fifth and sixth aspects has a quantum well layer of the active layer which is disordered in accordance with the period of the diffraction grating in the direction of advancing light waves. Light distributed feedback is conducted by gain coupling based on the periodic perturbation of gain factors in the theory of <u style="single">Kogelnik</u> et al. Therefore, the device can conduct a stable single mode lasing which is simply determinable with the period of diffraction grating without generating stop bands in specific wavelength zone nor producing longitudinal mode lasings at two wavelengths above and below the wavelength zone. The stable and singular mode lasing wavelength may be set in advance as it corresponds to the Bragg wave­length, and the laser may be designed and manufactured accordingly.

0035The semiconductor laser according to this invention forms a diffraction grating substantially on the active layer per se. The technology disclosed in the prior application mentioned above is essentially different from this invention as the prior application technology provides an untransparent semiconductor layer proximally to an active layer and conducts light distributed feedback with the diffraction grating thereon although both technologies conduct light distributed feedback by gain coupling based on the periodic perturbation of gain factors taught by the theory of <u style="single">Kogelnik</u> et al. while the prior application technology is defective because of light energy absorption into the untransparent semiconductor layer, the semi­conductor laser according to this invention does not have any thing equivalent to the untransparent layer and is free of such defect as optical energy absorption, and therefore has a higher efficiency in excitation energy.

0036This invention can achieve a remarkable improvement compared with the conventional structure which has diffraction grating etched directly on the active layer. More particularly, according to the conventional technology, after growing an active layer, the growth is suspended temporarily to allow a diffraction grating to be etched thereon, and then a semiconductor layer as a cladding layer is grown again thereon to produce defects in the semiconductor crystal structure of the active layer. Conversely, in this invention, either one of the following processes is employed: (1) A semiconductor which will be the substrate for growing an active layer is etched with a corrugated pattern corresponding to a diffraction grating, a thin buffer layer is grown upon the corrugated pattern maintaining the corrugated pattern as it is, an active layer is formed upon the corrugated pattern of the buffer layer, and (2) a quantum well layer on the active layer is disordered to form a diffraction grating. In the former case, the defects in the semiconductor crystal structure caused by a series of operation before and after etching will gradually be covered with the buffer layer which is grown thereupon to form a diffraction grating with the corrugated pattern free of defects on a surface of the acitve layer. In the latter case, the active layer is formed with a diffraction grating without defects of semiconductor crystal structure.

0037In the former case, the growth of the active layer is controlled so as to fill in the dents of the corrugated pattern . Consequently, the obtained active layer has the thickness distributed according to the corrugated pattern. This causes a desired perturbation in the light confinement factor and carrier density of the active layer in the direction of the laser resonator axis. Ultimately, gain coefficient for the light waves transmitting in the direction of the resonator axis changes in the period which is coincidental to the period of the diffraction grating to realize light distributed feedback by gain coupling. In the latter case, a desired perturbation is caused in the structure and carrier density of the active layer in the direction of laser resonator axis, and ultimately, gain factor for the light waves transmitting in the direction of the resonator axis changes at the period which is coincidental to the period of the diffraction grating to realize distributed feedback by gain coupling.

0038As the position of standing waves within the resonator is fixed coincidentally to the period of the changes in gain coefficients in this invention structure, it becomes less prone to the influence of reflection from the facet of a laser diode, and the device does not necessarily require an anti-reflection coating procedure in order to obtain single longitudinal mode lasing. Compared to the structure which shifts the phase of the diffraction grating by one quarter of the wavelength mentioned above, this invention laser becomes remarkably simpler in structure, less in the number of manufacture processes, and higher in production yield.

0039It is preferable to select a method for growing a thin buffer layer with a corrugated pattern preserved as it is in a manner to minimize filling of the dents by the growth. As a practical method, above mentioned metal organic vapor phase epitaxy method is highly preferable. This invention can be realized even if the corrugated pattern formed on one surface of the active layer is not completely congruent with the corrugated pattern formed before the growth of the buffer layer so long as the corrugated pattern on the active layer substantially serves as a diffraction grating and defects in the semiconductor crystal structure are limited within the practical scope. So far as the thickness of the buffer layer and the growth rate are suitably selected, various methods other than above mentioned metal organic vapor phase epitaxy method may realize the present invention.

0040The method to periodically disorder the quantum well layer is preferably ion implantation method. when masks are arranged on the surface of an active layer in the pattern corresponding to the period of the diffraction grating and ion is implanted uniformly over the surface thereof, quantum well layer will remain as it is at the portions covered with the masks, but will disappear due to disordering at the portions which are not covered with masks so that an intermittent quantum well layer which is periodically disordered is formed.

0041Alternatively, such quantum well structure may be periodically disordered by scanning the surface of the active layer with focused ion beams and by intermittently supplying or generating the ion beams coincidentally to the period of the diffraction grating.

[Brief Description of Drawings]

0042<ul id="ul0001" list-style="none"><li>FIG. 1 is a graph to show the emission spectrum characteristics of a conventional laser device.</li><li>FIG. 2 is a structural view of the first embodiment of this invention.</li><li>FIG. 3 is a view to show the result of observation of the section of the first embodiment of this invention by a scanning electron microscope (SEM).</li><li>FIG. 4 is a graph to show the emission spectrum characteristics of the first embodiment of this invention.</li><li>FIG. 5 is a graph to show temperature charac­teristics of the first embodiment of this invention.</li><li>FIG. 6 is a structural view to show the second embodiment of this invention.</li><li>FIG. 7 is a structural view to show the third embodiment of this invention.</li><li>FIG. 8 is a structural view to show the fourth embodiment of this invention.</li><li>FIG. 9 is sectional views to show the manufacture procedure of the fourth embodiment of this invention.</li><li>FIG. 10 is a structural view to show the fifth embodiment of this invention.</li><li>FIG. 11 is a structural view to show the sixth embodiment of this invention.</li><li>FIG. 12 is sectional views to show the manufacture procedure of the seventh embodiment of this invention.</li><li>FIG. 13 is sectional views to show the manufacture procedure of the eighth embodiment of this invention.</li><li>FIG. 14 is a view to show an application of this invention.</li></ul>

[Optimal Mode to Realize the Invention]

0043The present invention will now be described in more detail referring to preferred embodiments shown in attached drawings. FIG. 2 is a structural view to show the first embodiment of a semiconductor laser according to this invention wherein respective layers of semiconductor laser diodes of double hetero junction structure are continuously grown on an n⁺-GaAs substrate 1 in two stages by an epitaxial growth device by metal organic vapor phase epitaxy method.

0044In the first stage, on the substrate 1 are continuously and successively grown an n⁺-GaAs layer 2 of 0.5 µm thickness, an n-Al_0.45Ga_0.55As cladding layer 3 of 1 µm thickness, and an n-Ga_0.94Al_0.06As semiconductor layer 4 (said semiconductor epitaxial layer) of 0.2 µm thickness by metal organic vapor phase epitaxy method. Then, the semiconductor layer 4 which is the top of the grown layers is etched by interference exposure method and chemical etching capable of anisotropic etching to expose facets of (111) and (1<o ostyle="single">11</o>) in the corrugated pattern 5 corresponding to the diffraction grating of the period of 255 nm. In the second stage of epitaxial growth, upon the semiconductor layer 4 which has been etched with the diffraction grating 5 is grown an n-Al_0.40Ga_0.60As buffer layer 6 of the average thickness of 0.15 µm, upon which a non-doping GaAs active layer 7 of the average thickness of 0.1 µm, a p-Al_0.45Ga_0.55As cladding layer 8 of the thickness of 1 µm, and a p⁺-GaAs contact layer 9 of the thickness of 0.5 µm are successively and continuously grown by metal organic vapour phase epitaxy to complete a double hetero junction structure.

0045Then, an SiO₂ insulation layer 12 is deposited on the upper surface of the p-type contact layer 9 to form windows in stripe in the width of ca. 10 µm, for instance, and an Au-Zn electrode layer 11 of the positive side is vapor-deposited over the whole surface. Au-Ge electrode layer 10 of the negative side is vapor-deposited on the lower surface of the n-type substrate 1. The semiconductor block having the above structure is cleaved to complete semiconductor laser diodes respectively.

0046In the embodiment shown in FIG. 2, there is provided especially a semiconductor layer 4 upon the cladding layer 3 and a corrugated pattern corresponding to the diffraction grating is etched on the semiconductor layer 4. A buffer layer 6 is grown upon the semiconductor layer 4 above the corrugated pattern by metal organic vapor phase epitaxy with the pattern of the diffraction grating maintained intact. Then an active layer 7 is grown upon the buffer layer 6 in a manner to fill in the dents of the corrugated pattern. This enables fabrication of the diffraction grating on the underside of the active layer 7. As described above, in growing the buffer layer 6, the dents of the corrugated pattern are preserved while in the growth of the active layer 7 the dents are filled. Such growth is achieved by the control to vary the growth rate and/or other factors.

0047The control of the growth factors is relative, though. It would suffice if only the active layer 7 is formed on a surface thereof with a corrugated pattern which can substantially act as diffraction grating, the other surface of which is formed substantially flat, and a buffer layer 6 is grown on the corrugated pattern in a manner to protect the corrugated pattern of the active layer 7 which acts as the diffraction grating from the effect of the defects in the semiconductor crystal structure caused by etching.

0048FIG. 3 shows the result of observation by a scanning electron microscope of the section of a diode fabricated as above. The presence of the semiconductor layer 4, the buffer layer 6 and the active layer 7 is observed in the SEM pattern. It is obvious from FIG. 3 that a diffraction grating is formed on the lower surface of the active layer 7. The diffraction grating thus formed on the active layer 7 causes periodic changes in gain coefficient and enables fabrication of a semiconductor laser which can produce single mode lasing at Bragg wavelength corresponding to the period of the changes in gain coefficient due to light distributed feedback based on the perturbation of gain coefficients.

0049In the above embodiment, the semiconductor layer 4 is formed upon the cladding layer 3 and the layer 4 is etched in a corrugated pattern. This is because if the cladding layer 3 is directly etched to form the corrugated pattern, aluminum in the layer 3 might be oxidized to impair re-growing as the cladding layer 3 has a high aluminum compositional ratio. Therefore, a semiconductor layer 4 having a smaller compositional ratio of aluminum is provided thinly upon the cladding layer 3 and the corrugated pattern is etched thereon. When InP is used as the material for the cladding layer 3, the layer 3 may directly be etched, which case will be described in more detail later.

0050FIG. 4 shows the result of measurement of emission spectrum characteristics of the first embodiment of the distributed feedback semiconductor laser according to this invention.

0051FIG. 4 shows schematically the wavelength distribu­tion characteristics (a) (b) and (c) of the spectrum obtained when lasing current is increased stepwise from 0.97 I^th to I^th and 1.1 I^th on a trial laser having the structure shown in FIG. 2 which has the threshold current I^th = 230 mA at the temperature of 10°C.

0052Upon noting the spectrum characteristics (a) of the present invention laser at the lasing current of 0.97 I^th near the threshold in FIG. 4, it is obvious that stop bands centering around the Bragg wavelength shown in FIG. 1 do not appear and the spectrum characteristics show substantially symmetrical patterns vertically in respect of the main mode lasing wavelength of 871 nm. Such spectrum characteristics indicate that the first embodiment of this invention distributed feedback semiconductor laser shown in FIG. 2 performs light distributed feedback in which gain coupling is more dominant than index coupling in accordance with the wave coupling theory of <u style="single">Kogelnik</u> et al. due to the periodic perturbation of gains generated by forming the diffraction grating on the active layer. In this invention distributed feedback semiconductor laser, there is only one main mode existing at the center of the spectrum characteristics shown in FIG. 4 as a longitudinal node which would be brought to lasing by injected current close to threshold. This invention laser therefore realized a completely single longitudinal mode lasing true to the coupled wave theory of <u style="single">Kogelnik</u> et al.

0053FIG. 5 shows an example of temperature dependent characteristics of lasing wavelength and threshold current of the first embodiment of this invention distributed feedback semiconductor laser having the above mentioned structure. The temperature dependent characterisitcs were studied by actually measuring the changes in lasing wavelength and threshold current as against the temperature of a heat sink made of the material having a high thermal conductivity to which the laser is attached in order to prevent a rise in the temperature of the semiconductor laser. It is obvious from the temperature dependent characteristics shown in FIG. 5, this invention laser does not cause mode hopping even by the changes of temperature by 50°C but operates at a single longitudianl mode with lasing wavelength and threshold changing smoothly and continuously.

0054The temperature dependent characteristics are comparable to the conventional distributed feedback semi­conductor laser of this type, and therefore, it is obvious that due to the gain coupling by diffraction grating provided on the active layer of the semiconductor laser a sufficient distributed feedback which is different from that obtained by the conventional index coupling is effected.

0055An example of the metal organic vapor phase epitaxy which is directly relevant to this invention among the manufacture methods applicable to above embodiment will now be described in more detail. The example simply illus­trates a case which achieved the optimal result and does not limit this invention scope. Conditions disclosed herein may be suitably changed to realize the invention according to the know-how possessed by the experts of this field about the manufacture systems, usable materials and semiconductor production. <tables id="tabl0001" num="0001"><table frame="all"><title>Table 1</title><tgroup cols="5" colsep="1" rowsep="0"><colspec colnum="1" colname="col1" colwidth="31.50mm" /><colspec colnum="2" colname="col2" colwidth="31.50mm" /><colspec colnum="3" colname="col3" colwidth="31.50mm" /><colspec colnum="4" colname="col4" colwidth="31.50mm" /><colspec colnum="5" colname="col5" colwidth="31.50mm" /><thead valign="top"><row rowsep="1"><entry namest="col1" nameend="col5" align="center"><u style="single">Conditions of Manufacture Process</u></entry></row><row rowsep="1"><entry namest="col1" nameend="col1" /><entry namest="col2" nameend="col2" /><entry namest="col3" nameend="col3" align="center">substrate temperature (°C)</entry><entry namest="col4" nameend="col4" align="center">growth rate (µm/min)</entry><entry namest="col5" nameend="col5" align="center">V/III ratio</entry></row></thead><tbody valign="top"><row><entry namest="col1" nameend="col1" morerows="2" rowsep="1" align="left">first growth</entry><entry namest="col2" nameend="col2" align="left">buffer layer 2</entry><entry namest="col3" nameend="col3" align="right">780</entry><entry namest="col4" nameend="col4" align="char" char=".">0.09</entry><entry namest="col5" nameend="col5" align="right">40</entry></row><row><entry namest="col2" nameend="col2" align="left">cladding layer 3</entry><entry namest="col3" nameend="col3" align="right">780</entry><entry namest="col4" nameend="col4" align="char" char=".">0.15</entry><entry namest="col5" nameend="col5" align="right">30</entry></row><row rowsep="1"><entry namest="col2" nameend="col2" align="left">semiconductor layer 4</entry><entry namest="col3" nameend="col3" align="right">780</entry><entry namest="col4" nameend="col4" align="char" char=".">0.10</entry><entry namest="col5" nameend="col5" align="right">40</entry></row><row><entry namest="col1" nameend="col1" morerows="3" rowsep="1" align="left">second growth</entry><entry namest="col2" nameend="col2" align="left">buffer layer 6</entry><entry namest="col3" nameend="col3" align="right">750</entry><entry namest="col4" nameend="col4" align="char" char=".">0.14</entry><entry namest="col5" nameend="col5" align="right">30</entry></row><row><entry namest="col2" nameend="col2" align="left">active layer 7</entry><entry namest="col3" nameend="col3" align="right">750</entry><entry namest="col4" nameend="col4" align="char" char=".">0.05</entry><entry namest="col5" nameend="col5" align="right">40</entry></row><row><entry namest="col2" nameend="col2" align="left">cladding layer 8</entry><entry namest="col3" nameend="col3" align="right">750</entry><entry namest="col4" nameend="col4" align="char" char=".">0.15</entry><entry namest="col5" nameend="col5" align="right">30</entry></row><row rowsep="1"><entry namest="col2" nameend="col2" align="left">contact layer 9</entry><entry namest="col3" nameend="col3" align="right">680</entry><entry namest="col4" nameend="col4" align="char" char=".">0.09</entry><entry namest="col5" nameend="col5" align="right">40</entry></row><row><entry namest="col1" nameend="col5" align="justify">[Materials] arsine AsH₃</entry></row><row><entry namest="col1" nameend="col5" align="justify">trimethylgallium (CH₃)₃Ga</entry></row><row><entry namest="col1" nameend="col5" align="justify">trimethylaluminum (CH₃)₃Al</entry></row><row><entry namest="col1" nameend="col5" align="justify">monosilane SiH₄</entry></row><row><entry namest="col1" nameend="col5" align="justify">diethylzinc (C₂H₅)₂Zn</entry></row></tbody></tgroup><tgroup cols="5" colsep="1" rowsep="0"><colspec colnum="1" colname="col1" colwidth="31.50mm" /><colspec colnum="2" colname="col2" colwidth="31.50mm" /><colspec colnum="3" colname="col3" colwidth="31.50mm" /><colspec colnum="4" colname="col4" colwidth="31.50mm" /><colspec colnum="5" colname="col5" colwidth="31.50mm" /><thead valign="top"><row><entry namest="col1" nameend="col1" align="left">[Conditions]</entry><entry namest="col2" nameend="col2" /><entry namest="col3" nameend="col3" /><entry namest="col4" nameend="col4" /><entry namest="col5" nameend="col5" /></row></thead><tbody valign="top"><row><entry namest="col1" nameend="col5" align="justify">Pressure 100 Torr</entry></row><row rowsep="1"><entry namest="col1" nameend="col5" align="justify">Total flow volume 10 slm (hydrogen carrier)</entry></row></tbody></tgroup></table></tables>

0056FIG. 6 shows another structure of the embodiment or this invention wherein no semiconductor layer is provided additionally for etching of the corrugated pattern corresponding to the diffraction grating, but the substrate 1 which acts as a cladding layer is directly etched to grow a buffer layer 6 with the corrugated pattern.

0057In this structure, InP is used for the substrate 1, InGaP for the buffer layer 6 and InGaAsP for the active layer 7. This structure is suitable for a semiconductor laser which lases either at 1.3 µm or 1.5 µm. This structure is characterized in that only one crystal growing step is required after etching the corrugated pattern on the substrate 1. The buffer layer 6 is preferably formed by metal organic vapor phase epitaxy also in this case.

0058The above metal organic vapor phase epitaxy method is very promising as a method for forming a buffer layer 6 while maintaining the corrugated pattern as it is.

0059FIG. 7 is a structural view to show the third embodiment of the semiconductor laser according to this invention. In the figure, respective layers of semi­conductor laser diodes of quantum well structure are grown in two stages continuously on an n⁺-GaAs substrate 1 by metal organic vapor phase epitaxy.

0060More specifically, in the first stage, an n-type cladding layer 3 is grown on the substrate 1, and an n-AlGaAs semiconductor layer 4 is grown thereon further by metal organic vapor phase epitaxy. Then, the semiconductor layer 4 or the topmost layer of the grown layers is etched to form a corrugated pattern 5 with exposing the (111) face correspond­ing to the diffraction grating of 125 nm period by interference exposure method and chemical etching which is capable of anisotropic etching.

0061In the second stage, an n-AlGaAs buffer layer 6 of the average thickness of 0.1 µm is grown on the semi­conductor layer 4 which has been etched with the diffraction grating pattern similarly by metal organic vapor phase epitaxy. It is preferable to use a super-­lattice of AlGaAs having AlAs compositional ratio of 0.3 and 0.6 for the buffer layer 6. An n-AlGaAs graded index layer 7G is grown continuously upon the buffer layer 6 in an average thickness of 0.15 nm so as to allow AlAs compositional ratio to change smoothly from 0.6 to 0.3, an extremely thin GaAs quantum well 7W is grown thereupon in an average thickness of 10 nm, and then a p-AlGaAs graded index layer 7G′ wherein AlAs compositional ratio smoothly changes from 0.3 to 0.6 to grown thereon in an average thickness of 0.15 µm.

0062Further, a p-AlGaAs layer is grown thereon as a cladding layer 8 in the thickness of 1.5 µm. A p-GaAs capping layer 9 is grown in the thickness of 0.4 µm. Upon the capping layer 9 are vapor-deposited an insulation layer 12 and an electrode 11.

0063The structures of respective layers of this embodiment are shown in Table 2. <tables id="tabl0002" num="0002"><table frame="all"><title>Table 2</title><tgroup cols="4" colsep="1" rowsep="0"><colspec colnum="1" colname="col1" colwidth="39.37mm" /><colspec colnum="2" colname="col2" colwidth="39.37mm" /><colspec colnum="3" colname="col3" colwidth="39.37mm" /><colspec colnum="4" colname="col4" colwidth="39.37mm" /><thead valign="top"><row rowsep="1"><entry namest="col1" nameend="col1" align="left">No.</entry><entry namest="col2" nameend="col2" align="center">name of layer</entry><entry namest="col3" nameend="col3" align="center">aluminum compositional ratio</entry><entry namest="col4" nameend="col4" align="center">thickness</entry></row></thead><tbody valign="top"><row><entry namest="col1" nameend="col1" align="left">9</entry><entry namest="col2" nameend="col2" align="left">p-capping layer</entry><entry namest="col3" nameend="col3" align="left">0</entry><entry namest="col4" nameend="col4" align="left">0.4 µm</entry></row><row><entry namest="col1" nameend="col1" align="left">8</entry><entry namest="col2" nameend="col2" align="left">p-cladding layer</entry><entry namest="col3" nameend="col3" align="left">0.6</entry><entry namest="col4" nameend="col4" align="left">1.5 µm</entry></row><row><entry namest="col1" nameend="col1" align="left">7G′</entry><entry namest="col2" nameend="col2" align="left">graded index layer (p-type)</entry><entry namest="col3" nameend="col3" align="left">0.6 - 0.3</entry><entry namest="col4" nameend="col4" align="left">0.15 µm</entry></row><row><entry namest="col1" nameend="col1" align="left">7W</entry><entry namest="col2" nameend="col2" align="left">quantum well layer</entry><entry namest="col3" nameend="col3" align="left">0</entry><entry namest="col4" nameend="col4" align="left">ca. 10 nm</entry></row><row><entry namest="col1" nameend="col1" align="left">7G</entry><entry namest="col2" nameend="col2" align="left">graded index layer (n-type)</entry><entry namest="col3" nameend="col3" align="left">0.3 - 0.6</entry><entry namest="col4" nameend="col4" align="left">0.15 µm</entry></row><row><entry namest="col1" nameend="col1" align="left">6</entry><entry namest="col2" nameend="col2" align="left">buffer layer</entry><entry namest="col3" nameend="col3" align="left">0.6 (or SL)</entry><entry namest="col4" nameend="col4" align="left">1.5 µm</entry></row><row><entry namest="col1" nameend="col1" align="left">4</entry><entry namest="col2" nameend="col2" align="left">n-type layer</entry><entry namest="col3" nameend="col3" align="left">0.3</entry><entry namest="col4" nameend="col4" align="left">0.15 µm</entry></row><row><entry namest="col1" nameend="col1" align="left">3</entry><entry namest="col2" nameend="col2" align="left">n-cladding layer</entry><entry namest="col3" nameend="col3" align="left">0.6</entry><entry namest="col4" nameend="col4" align="left">1.5 µm</entry></row><row rowsep="1"><entry namest="col1" nameend="col1" align="left">1</entry><entry namest="col2" nameend="col2" align="left">substrate</entry><entry namest="col3" nameend="col3" align="left">0</entry><entry namest="col4" nameend="col4" align="left">-</entry></row></tbody></tgroup></table></tables>

0064The method for forming above mentioned active layer 7 including graded index layers and a quantum well is taught by R. Bhat et al. in the paper, "Patterned Quantum Well Heterostructures Grown by OMCVD on Non-planar Substrates: Applications to Extremely Narrow SQW Lasers", Journal of Crystal Growth 93 (1988) pp. 850 - 856, Amsterdam, and those layers may be manufactured by the above description.

0065The semiconductor laser of quantum well structure is described in the paper by Asada, "Gain Characteristics of Quantum Well Laser and Possibility of Minimizing Threshold by Quantization in High Dimension ", Journal of Applied Physics, Vol. 57, No. 5 (1988).

0066The above mentioned quantum well 7W may be a multiple quantum well (MQW) alternating plural quantum well layers and barrier layers.

0067FIG. 8 shows the fourth embodiment of this invention semiconductor laser in structure wherein various layers of semiconductor laser diodes of double hetero junction structure are grown on an n⁺-GaAs substrate 1 continuously in two stages by metal organic vapor phase epitaxy.

0068FIG. 9 shows the manufacture procedure of the fourth embodiment of this invention laser. In the first stage, for instance, an n-Al_0.45Ga_0.55 As cladding layer 3 of the thickness of 1.5 µm and an n-Al_0.3Ga_0.7As semiconductor layer 4 of the thickness of 0.2 µm are continuously and successively grown on a substrate 1 ({100} substrate) by metal organic vapor phase epitaxy. The semiconductor layer 4 or the topmost layer is etched by interference exposure method and chemical etching capable of anisotropic etching to form a corrugated pattern 5 corresponding to the diffraction grating of the period of 255 nm.

0069Etching is conducted in a manner to form substantially rectangular grooves and the angle ϑ shown in FIG. 9(b) is preferably an angle more than 75° and less than 125°. The depth of a groove is ca. 0.15 µm.

0070In the second stage of the epitaxial growth, a first buffer layer 6a of n-Al_0.3Ga_0.7As is grown in the average thickness of 0.1 µm on the semiconductor layer 4 which has been etched with said diffraction grating pattern. The growth is conducted under the conditions which would not grow or have slow growth in {111} B face. As a result, the dents in the etched diffraction grating in FIG. 9(c) are filled while projections are shaped to be triangular to form the first buffer layer 6a. The conditions to make the growth slow on the {111} B face or to eliminate the growth thereon will be described later in detail.

0071A second buffer layer 6b is grown with n-­Al_0.3Ga_0.7As of the average thickness of 0.1 µm on the first buffer layer 6a. The second buffer layer 6b is grown under the normal conditions rather than the above mentioned conditions. The cross section of the second buffer layer 6b becomes a form suitable as the diffraction grating and as the plane suitable to grow an active layer thereon as shown in FIG. 9(d). Upon the second buffer layer 6b are grown a GaAs active layer 7 without impurity doping in the average thickness of 0.1 µm, a p-Al_0.45Ga_0.55As cladding layer 8 in the thickness of 1.5 µm and a p⁺-GaAs contacting layer 9 in the thickness of 0.5 µm continuously and successively by metal organic vapor phase epitaxy to complete the double hetero junction structure.

0072An insulation layer 12 with SiO₂ is deposited on the upper surface of the p-type contact layer 9 to form windows in stripe of ca. 10 µm width, and Au-Zn electrode layer 11 of the positive side is deposited all over the surface, and Au-Ge electrode layer 10 of the negative side is deposited on the lower surface of the n-type substrate 1. The semi conductor block of the above structure is cleaved to complete individual semiconductor laser diodes.

0073In the embodiment shown in FIG. 8, an additional semi conductor layer 4 is provided on the cladding layer 3 and the corrugated pattern corresponding to the diffraction grating is etched on the semiconductor layer 4. A buffer layer 6 is grown on the etched semiconductor layer 4 by metal organic vapor phase epitaxy so as to exaggerate the form of the diffraction grating. Then, an active layer 7 is grown upon the buffer layer 6 in a manner to fill the dents in the pattern. This enables formation of the diffraction grating on the lower surface of the layer 7. In the growth of the buffer layer 6 the triangular shapes of the projection are exaggerated while in the growth of the active layer 7, the dents are filled. Such growth is performed by changing growth rate and other factors to properly shape the pattern.

0074The control over the growth conditions is relative, however. It would suffice only if the corrugated pattern is formed on one surface of the active layer 7 to act substantially as the diffraction grating, the other surface thereof is made substantially flat, and a buffer layer 6 is grown in a manner to protect the corrugated pattern on the layer 7 from the effect of defects in the semiconductor crystal structure caused by etching.

0075In this embodiment, the following conditions were experimentally confirmed to be those which make selective growth without causing the growth on aforementioned {111} B face. More specifically, by MOCVD method, growth is conducted under the following conditions: TMG, TMA, AsH₃ group Pressure 100 Torr, Total flow volume 10 slm Temperature of substrate 650 - 750°C Growth rate 0.005 - 0.15 µm/min V/III ratio 20 - 45

0076Another experiment confirmed that when the substrate temperature was increased to 750°C or more, the growth on {111} B face was slowed.

0077The conditions which are suitable to selectively cause semiconductor growth to emphasize the currugated pattern are described by some examples by Yoshilkawa et al. in "A Self Aligned Ridge Substrate Laser Fabricated by Single-Step MOVPE" Journal of Crystal Growth 93 (1988) pp. 834 - 849. This invention will be effectively realized by setting such conditions as described in the examples.

0078The aforementioned examples of the conditions, composition and thickness of respective layers of the above mentioned embodiment structures are illustrative of the invention and may be modified by an expert in this field having knowledge and experience thereof.

0079FIG. 10 shows the fifth embodiment of this invention. The structure of this embodiment is formed by growing a buffer layer 6 under the condition that no growth occurs on the {111} B face and growing an active layer 7 in the dents produced consequently. The active layer 7 formed is in the shape divided in the direction of the advancing light according to the period of the diffraction grating, and a guiding layer 14 is grown over the separated pieces of the active layer 7 in a manner to bridge them. On the guiding layer 14 is grown a cladding layer 8. Conditions of essential parts of the respective layers are noted in the figure. The conditions for the other layers are similar to the first embodiment.

0080FIG. 11 shows the sixth embodiment in structure. Similar to the fifth embodiment, the active layer 7 is divided in this embodiment, and is bridged by a guiding layer 14. But in this embodiment, the semiconductor layer 4 which is to be etched with the corrugation of the diffraction grating is grown slightly thinnly, and a semiconductor layer 4b with a higher resistance is grown over it. The semiconductor layer 4b may be, for example, intrinsic Al_0.3Ga_0.7As of the thickness of 0.15 µm. This structure can concentrate electric current into the dents of the diffraction grating.

0081Out of the manufacture methods for above mentioned laser, an example of metal organic vapor phase epitaxy which is directly relevant to this invention will now be described in more detail. However, this example is only illustrative of a case which achieved an optimal result and will no way limit the scope of this invention. In practice, according to the know-how of the experts of this field about the device, material and semiconductor manufacture method available, conditions disclosed herein may be suitably modified to realize this invention.

0082FIG. 12 shows schematically the manufacture procedure of the seventh embodiment of this invention semiconductor laser. In the structure shown, respective layers of a semiconductor laser diode of quantum well structure are epitaxially grown on an n⁺-GaAs substrate 1 in two stages but continuously in metal organic vapor phase.

0083More particularly, in the first stage, as shown in FIG. 12(a), an n-type cladding layer 3 is grown on the substrate 1, and an active layer 7 is grown further thereon. More specifically, in a manner to make AlAs compositional ratio change smoothly from 0.6 to 0.3, n-AlGaAs graded index layer 7G is grown in the average thickness of 0.15 µm, and then an extremely thin GaAs single quantum well layer 7W is grown thereon in the average thickness of 10 nm. A p-AlGaAs graded index layer 7G′ is further grown in the average thickness of 0.15 µm in a manner to allow the AlAs compositional ratio to change smoothly from 0.3 to 0.6.

0084As shown in FIG. 12(b) , masks 15 are formed with SiO₂ on the grown active layer 7 in the thickness of Ca. 50 nm. The masks 15 are of the structure which withstands ion implantation, and are formed in coincidence to the period of the diffraction grating. In this embodiment, the masks are formed by interference exposure and etching at the period of 255 nm in the direction of advancing light. Then, as shown in FIG. 12(c), ion is implanted from above the surface of the active layer 7 which has been covered periodically with the masks 15. As shown in FIG. 12(d), the masks 15 are subsequently removed and the second stage semiconductor growth is conducted as shown in FIG. 12(e).

0085In other words, a p-AlGaAs layer is grown as a cladding layer 8 on the active layer 7 in the thickness of 1.5 µm and a p-GaAs capping layer 9 is further grown thereon in the thickness of 0.4 µm. Electrodes are vapor-­deposited on the layer 9.

0086Similarly to the third embodiment shown in FIG. 7, the active layer 7 including the graded index layers and a quantum well may be manufactured according to the description in Bhat's paper.

0087The semiconductor laser of quantum well structure is taught by Asada as mentioned above.

0088The technology to disorder a quantum well layer by ion implantation is described in detail in the paper, "Low Dimensional Systems Quantum Wires and Quantum Boxes by MBE" by A. Gossard et al., Journal of Crystal Growth 81 (1987) pp. 101 - 105, Amsterdam.

0089Table 3 shows structures of respective layers of the embodiment. <tables id="tabl0003" num="0003"><table frame="all"><title>Table 3</title><tgroup cols="4" colsep="1" rowsep="0"><colspec colnum="1" colname="col1" colwidth="39.37mm" /><colspec colnum="2" colname="col2" colwidth="39.37mm" /><colspec colnum="3" colname="col3" colwidth="39.37mm" /><colspec colnum="4" colname="col4" colwidth="39.37mm" /><thead valign="top"><row rowsep="1"><entry namest="col1" nameend="col1" align="left">No.</entry><entry namest="col2" nameend="col2" align="center">name of layer</entry><entry namest="col3" nameend="col3" align="center">aluminum compositional ratio</entry><entry namest="col4" nameend="col4" align="center">thickness</entry></row></thead><tbody valign="top"><row><entry namest="col1" nameend="col1" align="left">9</entry><entry namest="col2" nameend="col2" align="left">p-capping layer</entry><entry namest="col3" nameend="col3" align="left">0</entry><entry namest="col4" nameend="col4" align="left">0.4 µm</entry></row><row><entry namest="col1" nameend="col1" align="left">8</entry><entry namest="col2" nameend="col2" align="left">p-cladding layer</entry><entry namest="col3" nameend="col3" align="left">0.6</entry><entry namest="col4" nameend="col4" align="left">1.5 µm</entry></row><row><entry namest="col1" nameend="col1" align="left">7G′</entry><entry namest="col2" nameend="col2" align="left">graded index layer (p-type)</entry><entry namest="col3" nameend="col3" align="left">0.6 - 0.3</entry><entry namest="col4" nameend="col4" align="left">0.15 µm</entry></row><row><entry namest="col1" nameend="col1" align="left">7W</entry><entry namest="col2" nameend="col2" align="left">quantum well layer</entry><entry namest="col3" nameend="col3" align="left">0</entry><entry namest="col4" nameend="col4" align="left">ca. 10 nm</entry></row><row><entry namest="col1" nameend="col1" align="left">7G</entry><entry namest="col2" nameend="col2" align="left">graded index layer (n-type)</entry><entry namest="col3" nameend="col3" align="left">0.3 - 0.6</entry><entry namest="col4" nameend="col4" align="left">0.15 µm</entry></row><row><entry namest="col1" nameend="col1" align="left">3</entry><entry namest="col2" nameend="col2" align="left">n-cladding layer</entry><entry namest="col3" nameend="col3" align="left">0.6</entry><entry namest="col4" nameend="col4" align="left">1.5 µm</entry></row><row rowsep="1"><entry namest="col1" nameend="col1" align="left">1</entry><entry namest="col2" nameend="col2" align="left">substrate</entry><entry namest="col3" nameend="col3" align="left">0</entry><entry namest="col4" nameend="col4" align="left">-</entry></row></tbody></tgroup></table></tables>

0090FIG. 13 is sectional views to indicate the manufacture process of the eighth embodiment of this inven­tion. This embodiment differs from the seventh embodiment in that the active layer is disordered by focused ion beams (FIB) . More specifically, as shown in FIG. 13(a) , a substrate 1, a cladding layer 3, and an active layer 7 including a quantum well layer 7W are formed by semi­conductor growth. Then, as shown in FIG. 13(b), an ion beam source 20 is scanned from above the active layer 7 to emit focused ion beams. While scanning, the ion beam source 20 is intermittently suspended of its supply of ion beams to repeat emission and suspension. As the period is adjusted to coincide with the period of the diffraction grating, by the time the ion beam scanning is completed, the quantum well layer 7W of the active layer 7 has been periodically disordered. As shown in FIG. 13(c), a cladding layer 8 and a contact layer 9 are grown thereupon by semiconductor growth.

0091FIG. 14 shows an application of the above embodiment wherein external light guiding components L₁ and L₃ are formed extending from both sides of a portion L₂ of the semi­conductor laser.

0092In this structure, as the quantum well layer 7W of the active layer 7 has been disordered periodically according to the diffraction grating period in the direction of light waves, light distribution feedback is achieved by gain coupling based on periodical perturbation of gain factors according to the theory of <u style="single">Kogelnik</u> et al.

0093The quantum well layer 7W may be structured with a multi quantum well layer (MQW) comprising plural quantum well layers and barriers in alternation.

[Industrial Applicability]

0094As described in the foregoing statement, this inven­tion realized a semiconductor laser which performs light distributed feedback gain coupling based on the periodic perturbation of gain coefficient according to the theory of <u style="single">Kogelnik</u> et al. This invention laser does not cause energy absorption loss unlike the prior application device which has an untransparent layer, nor cause defects in semiconductor crystal structure even if a diffraction grating is formed on the active layer. It does not require any anti-reflection coating.

0095Therefore, the semiconductor laser according to the present invention is stable in lasing mode without causing two mode lasing, and may be designed so in advance. This invention semiconductor laser is sample in forming the diffraction grating, does not need formation of anti-­reflection coating on the diode facet, has simple structure and simple manufacture process, is expected to achieve an excellent production yield, and is low in production cost. This invention laser can eliminate disadvantages of the prior application laser such as energy absorption loss and does not develop defects in the semiconductor crystal structure of the active layer even if the diffraction grating is formed to thereby effectively generate stimulated emission.

0096The semiconductor laser according to this invention can be manufactured with the lasing wavelength designed in advance, and is most suitable to mass production. Therefore it is extremely useful as a light source for long distance optical communication systems, wavelength division multiplex optical communication systems, optical information processing systems, optical information memory systems, optical measuring instruments and other various opto-electronic systems and devices.