Thermally optimized interdigitated transistor

A quasi-interdigitated transistor (50) for rf power applications has a plurality of channel regions (102-118) that are each offset from each other in a y-direction such that a qx heating component from adjacent channel regions will affect any one channel region to a lesser extent than the qx from adjacent channel regions in the conventional interdigitated structure. In a preferred embodiment, the channel regions (102-118) are formed in a single, curved, V-shaped row such that the cumulative transverse width of all of the transistor sections is less than the waveguide cutoff frequency. The V-shaped row of transistor sections also provides the advantage of parallel signal paths having approximately the same propagation time delay such that there is no phase cancellation within the device.