EP0342271A2

Process for making solid optical single and multiple interference layers.

Abstract

Process for the production of solid, optical, single and multiple interference layers on a substrate, in which one liquid film containing reactive compounds from which the layers are subsequently produced is applied to the substrate per layer by dipping into and removing from a dipping solution or by spin-coating, and the liquid film is converted into the layer, characterised in that the energy necessary for converting the particular liquid film into the particular layer is supplied to the liquid film by the action of high-intensity radiation.

Term

Term ended

Projected expiry passed 10 December 2008, 17.8 years ago.

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17 claims: 7 independent, 10 dependent

  1. c-de-0001
    1. A process for the preparation of solid optical single and Merhfach interference layers of metal oxides on a substrate, which contains on the substrate per shift by turning on and appearance in a dipping solution or by spin-coating a liquid film, the reactive compounds from which subsequently, the layers are produced, is applied and the liquid film is converted into the layer, characterized in that the liquid film by exposure to high intensity radiation, suitable for very quick, direct, and limited to the thickness of the liquid film itself substantially heating to high temperature, which is supplied for conversion of the respective liquid film in each layer necessary energy.
  2. c-de-0006
    6. The method according to any one of the preceding claims, characterized in that the necessary energy is supplied by a laser.
  3. c-de-0009
    9. A method according one of the preceding claims, characterized in that the radiation having an intensity of 300 to 5,000 watts / cm² is supplied to each liquid film.
  4. c-de-0011
    11. The method according to any one of the preceding claims, characterized in that oxide layers of Mg, Ca, Ba, Sr, Al, Ga, In, Si, Ge, Sn, Pb, Sb, Be, Te, Zr, Hf, Nb, Ta , Cr, Mo, W, Mn, Fe, Ru, Co, Rh, Ni, Pd, Zn, Cd, La and the rare earths, and mixtures thereof can be produced.
  5. c-de-0013
    13. The method according to any one of the preceding claims, characterized in that the conversion to produce a semi-conductive layer is carried out in a forming gas.
  6. c-de-0014
    14. The method according to any one of the preceding claims, characterized in that doped semiconductive oxide layers are produced.
  7. c-de-0015
    15. The method according to any one of the preceding claims, characterized in that only certain areas of the liquid film are exposed to the radiation and then the non-irradiated portion of the liquid film is removed with a suitable solvent.