Photoelectron mask and photo cathode image projection method using the same
Abstract
A photoelectron mask for photo cathode image projection includes a transparent substrate (11), a pattern (12) formed on a main surface of the transparent substrate. The pattern includes a non-transparent material. The mask also includes a photoelectron emission film (13) formed so as to cover the main surface of the transparent substrate on which the pattern are formed. The photoelectron emission film includes a material selected from the group consisting of pure platinum, a platinum-rich material containing platinum as the major component, and a platinum compound.
Term
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Projected expiry passed 8 December 2008, 17.8 years ago.
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1 sheet
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Every citation, both ways
| Document | Relation | Office | Category | Cited during |
|---|---|---|---|---|
| EP0157457A2 | Cites | European Patent Office (EPO) | Y | Search report |
| EP0182665A2 | Cites | European Patent Office (EPO) | Y | Search report |
| US3588570A | Cites | United States of America | X | Search report |
| IBM TECHNICAL DISCLOSURE BULLETIN, vol. 25, no. 3A, August 1982, page 986, New York, US; N.G. ANANTHA et al.: "Proximity correction in E-beam-systems", | Non-patent | – | – | Search report |
7 members in 4 offices; this record represents the family
Priority claims2
| Document | Office | Kind | Date |
|---|---|---|---|
| 31690187 | Japan | – | |
| 31690187 | Japan | A |
Members7
| Document | Office | Kind | |
|---|---|---|---|
| EP0321147A2 | European Patent Office (EPO) | A2 | |
| JPH01158731A | Japan | A | |
| KR890010605A | Republic of Korea | A | |
| EP0321147A3This record | European Patent Office (EPO) | A3 | |
| US4954717A | United States of America | A | |
| KR920005634B1 | Republic of Korea | B1 | |
| EP0321147B1 | European Patent Office (EPO) | B1 |
16 legal events, as 2 offices reported them to INPADOC
Over the term
Point at a mark for the eventEvents
| Event | Code | Office | |
|---|---|---|---|
| Gb: european patent ceased through non-payment of renewal feeCeasedGBPC | GBPC | EP | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Annual fee paid to national office [announced via postgrant information from national office to epo]GrantedPGFP | PGFP | EP | |
| No opposition filedOpposition26N | 26N | EP | |
| No opposition filed within time limitOppositionORIGINAL CODE: 0009261PLBE | PLBE | EP | |
| Information on the status of an ep patent application or granted ep patentGrantedSTATUS: NO OPPOSITION FILED WITHIN TIME LIMITSTAA | STAA | EP | |
| Designated contracting statesAK | AK | EP | |
| (expected) grantORIGINAL CODE: 0009210GRAA | GRAA | EP | |
| Designated country de not longer valid8566 | 8566 | DE | |
| Designated contracting states (corrected)RBV | RBV | EP | |
| First examination report despatched17Q | 17Q | EP | |
| Request for examination filed17P | 17P | EP | |
| Designated contracting statesAK | AK | EP | |
| Search report despatchedORIGINAL CODE: 0009013PUAL | PUAL | EP | |
| Designated contracting statesAK | AK | EP | |
| Public reference made under article 153(3) epc to a published international application that has entered the european phaseORIGINAL CODE: 0009012PUAI | PUAI | EP |
Numbers
- Publication
- 0321147
- Application
- 883116246
Titles3
- German
- Photoelektronische Maske und Verfahren zur Projektion eines durch eine Photokathode erzeugten Bildes unter Verwendung dieser Maske
- English
- Photoelectron mask and photo cathode image projection method using the same
- French
- Masque photoélectronique et méthode de projection d'image photocathodique faisant usage d'un tel masque
Classification
- CPC, 6
- B82Y10/00
- H01J37/3175
- B82Y40/00
- H01J1/34
- H01J2201/3425
- H01J2237/31779
- IPC, 5
- G03F1 00
- G03F7 20
- H01J1 34
- H01J37 317
- H01L21 027
Designated states1
- Contracting states, 1
- United Kingdom