Semiconductor device having a diffusion barrier and process for its production

This invention provides a semiconductor device having an electrode conductor layer (6) on a semiconductor substrate (1) through the medium of a diffusion barrier layer (5) which is formed of an amorphous material having a higher crystallization temperature than the heat treatment temperature for the semiconductor device, and a process for manufacturing this device. According to this invention, an undesired reaction between the metal of the electrode conductor layer (6) and the material of the semiconductor substrate (1) and the diffusion of the electrode conductor material into the semiconductor substrate (1) can be prevented, whereby a semiconductor device having a high thermal reliability can be obtained.