EP0246765A3

Apparatus and method for manufacturing planarized aluminium films

Abstract

An apparatus for planarizing an aluminum layer on a semiconductor wafer includes two deposition sources. The first source applies a refractory metal silicide layer to form a barrier to oxygen. The water is moved to a second deposition source which is an aluminum sputter device including a heater for the wafer, R.F. bias on the wafer and a magnetic mirror behind the wafer to move the plasma away from the wafer.

EP0246765A3, drawing sheet 1
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Term ended

Projected expiry passed 27 April 2007, 19.4 years ago.

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