EP0246514A3
Deep trench etching of single crystal silicon
Abstract
A process is described for the deep trench, anisotropic plasma etching of single crystal silicon through an apertured mask of SiO2 or Si3N4 using an atmosphere comprising a mixture of NF3, a halofluorocarbon and optionally an inert gas.
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Projected expiry passed 8 May 2007, 19.4 years ago.
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1 sheet
Sheet 1
Every citation, both ways
| Document | Relation | Office | Category | Cited during |
|---|---|---|---|---|
| EP0148340A1 | Cites | European Patent Office (EPO) | A | Search report |
| EP0200951A2 | Cites | European Patent Office (EPO) | XP | Search report |
| GB2026395A | Cites | United Kingdom | Y | Search report |
| JOURNAL OF VACUUM SCIENCE & TECHNOLOGY PART B. vol. 5, no. 1, January-February 1987, pages 342-346, Woodbury, NY, USA; R. SELLAMUTHU et al.: "A study of anisotropic trench etching of Si with NF3-halocarbon". | Non-patent | – | – | Search report |
| MICROELECTRONICS JOURNAL. vol. 16, no. 1, January-February 1985, pages 5-21, Luton, GB; B. GOLJA et al.: "A review of nitrogen trifluoride for dry etching in microelectronics processing". | Non-patent | – | – | Search report |
| IBM TECHNICAL DISCLOSURE BULLETIN. vol. 26, no. 2, July 1983, pages 682-683; J. GRESCHNER et al.: "Reactive ion etching of submicron silicon grooves". | Non-patent | – | – | Search report |
| IBM TECHNICAL DISCLOSURE BULLETIN. vol. 25, no. 8, January 1983, pages 4408-4409; J.S. LECHATON et al.: "Method for forming vertical walled trenches in silicon substrates using reactive sputter etching". | Non-patent | – | – | Search report |
8 members in 5 offices; this record represents the family
Priority claims2
| Document | Office | Kind | Date |
|---|---|---|---|
| 864177 | United States of America | – | |
| 86417786 | United States of America | A |
Members8
| Document | Office | Kind | |
|---|---|---|---|
| EP0246514A2 | European Patent Office (EPO) | A2 | |
| KR870011672A | Republic of Korea | A | |
| JPS6333586A | Japan | A | |
| BR8702442A | Brazil | A | |
| JPS6356312B2 | Japan | B2 | |
| ZA873465B | South Africa | B | |
| EP0246514A3This record | European Patent Office (EPO) | A3 | |
| KR900003804B1 | Republic of Korea | B1 |
11 legal events, as the office reported them to INPADOC
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| Event | Code | |
|---|---|---|
| Information on inventor provided before grant (corrected)RIN1 | RIN1 | |
| Information on inventor provided before grant (corrected)RIN1 | RIN1 | |
| Information on inventor provided before grant (corrected)RIN1 | RIN1 | |
| Information on inventor provided before grant (corrected)RIN1 | RIN1 | |
| Application deemed to be withdrawnWithdrawn18D | 18D | |
| Information on the status of an ep patent application or granted ep patentGrantedSTATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWNSTAA | STAA | |
| Designated contracting statesAK | AK | |
| Main classification (correction)RHK1 | RHK1 | |
| Search report despatchedORIGINAL CODE: 0009013PUAL | PUAL | |
| Designated contracting statesAK | AK | |
| Public reference made under article 153(3) epc to a published international application that has entered the european phaseORIGINAL CODE: 0009012PUAI | PUAI |
Numbers
- Publication
- 0246514
- Application
- 871067112
Titles3
- German
- Ätzung tiefer Nuten in monokristallinen Silizium
- English
- Deep trench etching of single crystal silicon
- French
- Gravure de sillons profonds dans du silicium monocristallin
Classification
- CPC, 2
- H10P50/242
- H10P50/692
- IPC, 7
- C30B33 00
- C23F4 00
- C30B29 06
- C30B33 12
- H01L21 145
- H01L21 3065
- H01L21 308
Designated states7
- Contracting states, 7
- Belgium
- Germany
- Spain
- France
- United Kingdom
- Italy
- Netherlands (Kingdom of the)