Nova Patents
EP0177221A3

Semiconductor laser

Abstract

A distributed feedback semiconductor laser has gain producing regions formed by superlattice regions (5) separated by semiconductor regions (4) with a greater band gap, and which are transparent to laser radiation. These regions are between guide layers (3,7) which in turn are between cladding layers (2.8) of the semiconductor laser. The semiconductor regions (4) of greater band gap are preferably formed by disordering superlattice regions by diffusing or implanting an impurity therein, as this permits them to be formed with little lattice damage. The result is a semiconductor which oscillates in a single longitudinal mode, has a low threshold current, and exhibits a good mode stability against reflected light.

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Term ended

Projected expiry passed 18 September 2005, 21 years ago.

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Citations
DocumentRelationOfficeCategoryCited during
JPS60217690ACitesJapanESearch report
APPLIED PHYSICS LETTERS, vol. 45, no. 1, 1st September 1984, pages 549-551, American Institute of Physics, New York, US; K. MEEHAN et al.: "Disorder of an AlxGa1-xAs-GaAs superlattice by donor diffusion"Non-patent––Search report
PATENT ABSTRACTS OF JAPAN, vol. 1, no. 114 (E-49), 30th September 1977; & JP-A-52 45 888 (SONY K.K.) 11-04-1977Non-patent––Search report
PATENT ABSTRACTS OF JAPAN, Vol. 8, No. 268, (E-283)[1705], 7th December 1984; & JP-A-59 139 691 (NIPPON DENSHIN DENWA KOSHA) 10-08-1984Non-patent––Search report
APPLIED PHYSICS LETTERS, vol. 40, no. 10, 15th May 1982, pages 904-906, American Institute of Physics, New York, US; J.J. COLEMAN et al.: "Disorder of an AlAs-GaAs superlattice by silicon implantation"Non-patent––Search report
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B., vol. 3, no. 2, March-April 1985, pages 687-693, American Vacuum Society, New York, US; H. OKAMOTO: "Optical properties of superlattice and MQW laser diode"Non-patent––Search report