Improvements in the manufacture of group iiib-vb compounds

This invention relates to the manufacture of group IIIB-VB alloys or compounds, hereinafter referred to as compounds. More specifically, the invention relates to the deposition onto a heated substrate in an otherwise cool environment of the precursors of the compounds to be produced. The elements herein referred to as group IIIB elements are those elements which have an s² p¹ outer electron configuration, and those elements herein referred to as group VB elements are those elements which have an s² p³ outer electron configuration.

The Metal Organic Chemical Vapour Deposition procedure referred to hereinafter as MOCVD has been proposed. This procedure comprises impinging a stream of cool gaseous reactants usually in admixture with a carrier gas onto a hot substrate and is exemplified by the reaction of trimethyl gallium and arsine with hydrogen as a carrier gas. This reaction can be represented by the equation. <chemistry id="chem0001" num="0001"><img file="EP0052979B1_D0001.tif" /></chemistry>

Attempts to apply an analogous reaction to the production of group IIIB-VB compounds wherein the group IIIB element is indium, for example indium phosphide, have met with limited success as trialkylindium and group VB element hydrides, for example phosphine and arsine, react together in the cold to form an involatile polymeric substance before reaching the hot substrate. The formation of the polymer may be summarised in the following equation:- <chemistry id="chem0002" num="0002"><img file="EP0052979B1_D0002.tif" /></chemistry>where R=_alkyl, and X is a group VB element. A reaction of this type was disclosed by R. Didchenko et al in J. In. Org. Nuc. Chem. 1960 Vol. 14 p. 35. Formation of this polymeric substance causes depletion of the gas phase reactants resulting in poor product growth rates and morphology. Furthermore accurate control of the amount of indium present in the product is impossible as the gas phase concentration of the indium compound is being varied by reaction 2 as shown above. Trimethyl gallium and arsine do not produce a corresponding polymeric substance to any significant extent.

A method of growing epitaxial indium phosphide layers on a heated substrate is described by H. Renz et al. in Electronic Letters Vol. 16 No. 6 page 228 (1980); wherein the previously prepared adduct (CH₃)₃ In-P (CH₃)₃ is impinged upon a heated substrate and undergoes pyrolysis to yield indium phosphide.

This method could only be used to produce group IIIB-group VB compounds where the constituent group IIIB and VB elements form stable adducts of the type described which undergo the desired pyrolysis reaction when heated. The reference does not mention the possibility of preparing any compounds other than indium phosphide by the described method. Furthermore the ratio of the indium to the phosphorous, conveyed to the substrate, is fixed at 1:1 in the adduct, the use of the method to produce a group IIIB-group VB compound having three or more components is not disclosed.

In accordance with the present invention, instead of attempting to react a group VB element hydride with an alkyl derivative of group IIIB element on impact with the hot substrate; at least one alkyl derivative of at least one group IIIB element, modified by the donation of electron density to be a weaker Lewis acid which does not undergo the reaction with the group VB hydride to form an involatile polymer, is conveyed, in admixture with the hydride of at least one group VB element, to a substrate on a heated susceptor plate where the required group IIIB-group VB compound is deposited. A Lewis acid is herein defined as an element or compound which is electron deficient and an electron acceptor, and a Lewis base is an element or compound which has an "excess" of electrons and is an electron donor.

Accordingly the method of the present invention may be used to produce a binary group IIIB-group VB compound where the desired group IIIB and VB elements will not form an adduct of the form R₃ M-XR₃ which will undergo pyrolysis to form MX (where R=alkyl, M=group IIIB element and X=group VB element). Further advantages of the method of the present invention are that the ratio of the group IIIB element to the group VB element being impinged upon the substrate may be varied; and the present invention may be used to produce compounds containing three or more group IIIB and VB elements.

A first method in accordance with the present invention comprises reacting 1 an alkyl derivative of the desired group IIIB element with, 2 an alkyl derivative of a group VB element thereby forming a volatile intermediate, and thereafter conveying the volatile intermediate and 3 the hydride of the desired group VB element as .gases in a stream of hydrogen gas to impinge upon a hot substrate. In this method electron density is donated to the alkyl derivative of the group IIIB element in the reaction between it and the alkyl derivative of a group VB element forming the volatile intermediate. This volatile intermediate reacts with the group VB element hydride on the hot substrate. The reaction can be represented by the equation: <chemistry id="chem0003" num="0003"><img file="EP0052979B1_D0003.tif" /></chemistry><chemistry id="chem0004" num="0004"><img file="EP0052979B1_D0004.tif" /></chemistry>where M is a group IIIB element, X and X' are group VB elements and R and R' are alkyl groups. X may be the same as X', but it need not be and R may be the same as R' but it need not be. R and R' are preferably methyl or ethyl groups.

In the above equation MR₃ reacts with XR'₃ when cold and the compound formed, RaM. XR'₃ is stable in the presence of X'H₃ because XR'₃ is a stronger Lewis base than X'H₃, thus the formation of the unwanted polymer is stopped.

A second method in accordance with the present invention comprises replacing an alkyl group on the alkyl derivative of the desired group IIIB element with an electron donating group and thereafter conveying the resulting substituted alkyl derivative of the group IIIB element to a hot substrate in admixture with the hydride of the required group VB element in a stream of hydrogen gas.

In this method a substituted alkyl derivative of a group IIIB element is prepared which is a weaker Lewis acid than the non-substituted alkyl derivative of the group IIIB element. When used in the MOCVD procedure this substituted alkyl derivative of a group IIIB element will not react with the group IIIB element hydride until it reaches the hot substrate.

The invention will now be described with reference to the following Examples and the accompanying drawing which is a schematic view of an apparatus for carrying the method of the invention into effect. The general procedure for carrying the invention into effect will initially be described with reference to the drawing.

The apparatus illustrated comprises a water cooled vessel 1 with inlet and exit pipes 2 and 3 for cooling water running through exterior cooling jacket 9. The interior of the vessel 1 houses a graphite pedestal 4 onto which substrates 5 for the vapour deposition are laid. A thermocouple 6 extending from outside the vessel 1 penetrates the interior of the pedestal 4 and the outside of the vessel is surrounded by an induction heating coil 7. The interior of the vessel has a waste exhaust pipe 8. Thus far the invention is a standard reaction vessel for MOCVD with the exception that the water jacket 9 is shortened and does not cover the varpour entry end part of the vessel 1. The reasons for this will become apparent.

At the inlet end of the vessel 1 there is an entry passage 10 for vapour streams for reaction, in accordance with the invention, into an adduct or a compound. Passage 10 has an axial entry port 11 for the group IIIB alkyl derivative vapour and a radial port 12 adjacent port 11 for entry of the electron donating vapour. Baffles 13 restrict the passage in front of radial port 12 in order to define a partially closed reaction chamber. Immediately in front of baffles 13 there is a radial entry port 14 for dopants such as H₂S and ZnMe₂. The passage extends into the vessel 1 and has side orifices 15 for communicating the passage 10 with the vessel interior. A radial entry port 16 is provided in the vessel outside of water jacket 9 for the group VB hydride vapour.

Means such as a heater tape are provided for raising the temperature of the entry passage 10 typically to 20° above ambient, in order to prevent condensation of the adduct or compound produced in the passage 10. Premature condensation is also discouraged by the shortening of the water jacket referred to previously.

Referring now to the specific examples.

Example 1

A first cool vapour stream comprising 10-⁴ mol fraction of trimethyl indium in hydrogen is caused to flow into passage 10 through port 11 and a second cool vapour stream comprising a similar concentration of triethyl phosphine in hydrogen is caused to flow into passage 10 through port 12. The streams reacted within the reaction chamber to provide a volatile adduct which enters the vessel 1 through ports 15 to be contacted by a third cool vapour stream of approximately 15 times the quantity of phosphine again in admixture with hydrogen entering the vessel through port 16. The mixed vapour streams impinged upon the heated, typically 650°±50°C substrate 5 to deposit indium phosphide. The reactions can be represented as follows:- <chemistry id="chem0005" num="0005"><img file="EP0052979B1_D0005.tif" /></chemistry><chemistry id="chem0006" num="0006"><img file="EP0052979B1_D0006.tif" /></chemistry>

The deposition rate is adjusted to approximately 5 to 6 microns per hour per unit area by adjustment of the vapour inlet flows using mass flow controllers.

In the following further examples the reaction apparatus and conditions are similar to those set out above.

Example 2

Indium arsenide was prepared on a hot substrate by an MOCVD process wherein trimethyl indium and triethyl arsine followed by an excess quantity of arsine were combined in a cool stream of hydrogen gas and impinged upon the substrate. The reaction can be represented by the following equation: <chemistry id="chem0007" num="0007"><img file="EP0052979B1_D0007.tif" /></chemistry><chemistry id="chem0008" num="0008"><img file="EP0052979B1_D0008.tif" /></chemistry>

Example 3

Indium phosphide was prepared on a hot substrate by an MOCVD process wherein triethyl indium and, triethylamine followed by an excess quantity of phosphine were combined in a cool stream of hydrogen gas and impinged upon the substrate. The reaction can be represented by the following equation: <chemistry id="chem0009" num="0009"><img file="EP0052979B1_D0009.tif" /></chemistry><chemistry id="chem0010" num="0010"><img file="EP0052979B1_D0010.tif" /></chemistry>

Example 4

Gallium indium arsenide a tertiary alloy was prepared on a hot substrate by an MOCVD process wherein trimethyl gallium, trimethyl indium and triethyl phosphine followed by an excess quantity of arsine were combined in a cool stream of hydrogen gas and impinged upon the substrate. The reaction can be represented by the following equation: <chemistry id="chem0011" num="0011"><img file="EP0052979B1_D0011.tif" /></chemistry><chemistry id="chem0012" num="0012"><img file="EP0052979B1_D0012.tif" /></chemistry>

The second method in accordance with the present invention is illustrated by the following example:

Example 5

Indium phosphide was prepared on a hot substrate by an MOCVD process wherein phosphine and dimethyl diethylamino Indium (Me₂lnNEt₂) were combined in a cool stream of hydrogen gas and impinged upon a hot substrate. The dimethyl diethylamino indium was prepared by conventional chemical means.

It will be appreciated that dimethyl diethylamino indium is trimethyl indium with one of the alkyl groups replaced by the electron donating amine group. Thus dimethyl diethylamino indium is a weaker Lewis acid than trimethyl indium. The MOCVD reaction can be represented by the following equation: <chemistry id="chem0013" num="0013"><img file="EP0052979B1_D0013.tif" /></chemistry>

The dimethyl diethylamino indium does not react with PH₃ when cold to yield an involatile product. Dimethyl dimethylamino indium may be used and is preferable by reason of its enhanced volatility.

Example 6

Gallium indium arsenide phosphide a quaternary alloy was prepared on a hot substrate by an MOCVD process wherein trimethyl gallium, trimethyl indium, triethyl phosphine and an excess quantity of arsine and phosphine were the cold gases impinged upon the substrate. The reaction can be represented by the following equation: <chemistry id="chem0014" num="0014"><img file="EP0052979B1_D0014.tif" /></chemistry><chemistry id="chem0015" num="0015"><img file="EP0052979B1_D0015.tif" /></chemistry>

In this reaction the equations are not balanced, but for accuracy the x and y terms for the alloy are included.