Semiconductor layer solar battery and method of manufacturing same

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The invention relates to a method for producing a silicon layer having a solar cell, wherein the silicon is applied by means of arc spraying or plasma spraying in a gas atmosphere on a support.

Such a method is known from US-B 5 61 404. After the production of the silicon layer by means of arc spraying or plasma spraying, a heat treatment of the applied material can take place in the known method.

Subject of the German Patent Application DE-OS 29 24 584 corresponding older German patent application is a method for producing silicon for solar cells, is introduced in the silicon dioxide or silicon with a higher Verunräutigungsgrad in a reducing gas atmosphere in a plasma. As a reducing gas atmosphere hydrogen or lower saturated or unsaturated hydrocarbons should be used

the. 40 \

From »IBM Techn. Disci. Bull. ", Vol. 10

March 1977. Pages 3955-6 it is known silicon f

Melt layers after application to improve crystallinity.

The invention has for its object to improve the quality of the silicon layer in a method of the type mentioned. This object is achieved according to the invention in that the silicon is applied in a gas atmosphere, which reacts only slightly with the silicon, but strongly with the impurities in the silicon. ύ

For this purpose, the arc or plasma atmosphere contains, for example, gases such as HCl. HF, CI2, h or S2. By pulverizing and treating with HCl, for example, silicon powder can be freed from impurities such as metallic Al, Mg or Na.

According to one embodiment of the invention, the $

Silicon layer after application to the carrier ^:'

with the help of an arc beam. Plasma beam or a focused light or LASER beam briefly melted.