Semiconductor processing device

Substrate processing equipment

[0001] Cross-references to related applications

[0002] This application claims the rights and interests of Korean Patent Application No. 102019-0008341 filed with the Korean Intellectual Property Office on January 22, 2019, the entire disclosure of which is incorporated herein by reference.

Technical field

[0003] One or more embodiments relate to a substrate processing apparatus, and more particularly, to a substrate processing apparatus having an improved exhaust structure for a batch reactor.

Background technique

[0004] In semiconductor or display processing equipment, productivity (eg, the number of substrates that can be processed per unit time) is a very important factor in the mass production process. As a device capable of mass production, there is a batch reactor. A batch reactor is a system in which dozens of substrates are stacked vertically, loaded into a reactor, and then processed. Batch-type reactors have high productivity because they can process dozens of substrates at a time, but a disadvantage of batch-type reactors is that since one reactor processes multiple substrates at the same time, it is difficult to precisely control a single substrate.

[0005] For example, in a multi-reactor system equipped with multiple reactors in one chamber, it is necessary to implement a gas supply and exhaust structure for processing multiple substrates simultaneously. However, this gas supply and exhaust structure is more complex than that of a reactor system equipped with a single reactor.

[0006] In recent years, there has been an increasing demand for multiple reactors capable of precise control of production rates and individual substrates. Furthermore, as a system equipped with multiple reactors in one chamber, there is a need for a substrate processing device that can process multiple substrates simultaneously while accurately controlling a single substrate, thereby improving productivity.

Contents of the invention

[0007] In the case of a multi-reactor system, each reactor has a gas supply and exhaust system, and the arrangement of the exhaust system affects the process reproducibility of each reactor. Accordingly, one of the problems addressed by the present disclosure is to provide an exhaust system that improves process reproducibility between reactors.

[0008] Additional aspects will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the embodiments presented.

According to one or more embodiments, the substrate processing device includes: a first reactor including a first reaction space for processing the first substrate and a first exhaust for exhausting gas in the first reaction space. space; a first exhaust path extending to surround at least a portion of the first exhaust space; a second exhaust path extending to surround at least a portion of the first exhaust space; a first exhaust port connecting the first one end of the exhaust path and the first exhaust space; a second exhaust port connecting one end of the second exhaust path and the first exhaust space; and a first transfer port connecting the first exhaust path and the second exhaust space. Exhaust path.

[0010] A part of the gas in the first reaction space can be discharged through the first exhaust port, the first exhaust path and the first transfer port, and another part of the gas in the first reaction space can pass through the second exhaust port, The second exhaust path and the first transfer port exhaust.

[0011] The gas in the exhaust space may be exhausted upward to the first exhaust path through the first exhaust port, and the gas in the first exhaust space may be exhausted upward to the second exhaust path through the second exhaust port.

[0012] The substrate processing apparatus may further include: a first transfer path connected to the first transfer port, wherein the gas in the first exhaust path and the second exhaust path may be discharged downwardly to the first transfer port through the first transfer port. Transmission path.

[0013] The substrate processing apparatus may further include a partition wall housing the first reactor, wherein the first transfer path may be arranged in the partition wall.

[0014] The substrate processing device may further include: a second reactor including a second reaction space for processing the second substrate and a second exhaust space for discharging gas in the second reaction space; a third exhaust space a path extending to surround at least a portion of the second exhaust space; a fourth exhaust path extending to surround at least a portion of the second exhaust space; a third exhaust port connecting one end of the third exhaust path and a second exhaust space; a fourth exhaust port connecting one end of the fourth exhaust path and the second exhaust space; and a second transfer port connecting the third exhaust path and the fourth exhaust path.

[0015] The substrate processing apparatus may further include a partition wall accommodating a first reactor and a second reactor, wherein a plurality of substrates may be processed simultaneously by the first reactor and the second reactor.

[0016] The substrate processing apparatus may further include: a first transfer path connected to the first transfer port; a second transfer path connected to the second transfer port; and a connection port connecting the first transfer path to the second transfer port. path; and an exhaust pump connected to the connection port, wherein the first transfer path and the second transfer path may be arranged in the partition wall, and the connection port and the exhaust pump may be located outside the partition wall and asymmetrically with respect to the substrate processing apparatus layout.

[0017] Each of the first transfer port and the second transfer end may be adjacent to a corner of the partition wall.

[0018] The first reactor may include: a substrate support unit; a first cover including a processing unit and disposed on the substrate support unit; and a second cover having a first exhaust space formed therein and disposed on the substrate between the support unit and the first cover.

[0019] The first exhaust space may extend to surround the first reaction space, and a channel may be formed between the first exhaust space and the first reaction space, so that the first exhaust space communicates with the first reaction space through the channel. Connected.

[0020] According to one or more embodiments, a substrate processing apparatus includes: a partition wall having a plurality of substrate support units arranged therein; a cover arranged on the partition wall and providing an exhaust space; a plurality of rows a gas port connected to the exhaust space and configured to exhaust gas in a first direction; a plurality of exhaust paths connected to the plurality of exhaust ports respectively; and a transfer end connected to the plurality of exhaust paths and configured to to discharge the gas in the second direction.

The plurality of exhaust paths may include: a first exhaust path extending to surround at least a portion of the exhaust space; and a second exhaust path extending to surround at least a portion of the exhaust space, wherein the plurality of exhaust paths The gas port may include: a first exhaust port connecting one end of the first exhaust path to the exhaust space; and a second exhaust port connecting one end of the second exhaust path to the exhaust space.

[0022] A plurality of processing units may be formed inside the cover.

[0023] A plurality of reaction spaces may be defined by a plurality of substrate support units and a plurality of processing units.

[0024] The substrate processing apparatus may further include: a top cover disposed between the partition wall and the cover; and a flow control ring disposed on the top cover between the top cover and each of the plurality of substrate support units, and spaced apart from each of the plurality of substrate support units to form a gap, wherein the flow control ring is slidably disposed on the top cover.

[0025] The plurality of exhaust ports may be spaced apart from each other at intervals of 360/n degrees, where n may be the number of the plurality of exhaust ports and be a natural number greater than 2.

[0026] The substrate processing device may also include: a plurality of control valves, which are respectively connected to a plurality of exhaust terminals, wherein a plurality of control valves

Control valves control the flow of gas through various exhaust ports.

[0027] The plurality of control valves may be controlled such that the gas flow rate through the exhaust port located a first distance from the delivery end is less than the gas flow rate through the exhaust port located a second distance greater than the first distance.

According to one or more embodiments, a substrate processing apparatus includes: a plurality of reactors, wherein each of the plurality of reactors includes a reaction space for processing the substrate and a gas for exhausting the reaction space. an exhaust space; a partition wall that accommodates a plurality of reactors; a first cover that includes a plurality of gas supply units and is arranged on the partition wall; a second cover that has an exhaust space formed therein and is arranged on the partition wall between the partition wall and the first cover; a first exhaust path extending to surround at least a portion of the exhaust space; a second exhaust path extending to surround at least a portion of the exhaust space; a first exhaust end One end of the first exhaust path is connected to the exhaust space and configured to discharge gas in the exhaust space upward; a second exhaust end connects one end of the second exhaust path to the exhaust space and is configured to discharge gas in the exhaust space upward; and a first transfer port connecting the first exhaust path to the second exhaust path and configured to discharge gas in the first exhaust path and the second exhaust path downward. gas.

Description of the drawings

[0029] These and/or other aspects will become apparent and easier to understand through the following description of the embodiments in conjunction with the accompanying drawings, in which:

[0030] FIG. 1 is a view of a substrate processing apparatus according to an embodiment of the inventive concept;

[0031] FIG. 2 is a view of a substrate processing apparatus according to other embodiments of the inventive concept;

[0032] Figure 3 is a plan view of the substrate processing apparatus of Figure 2;

[0033] Figures 4 to 6 are cross-sectional views of the substrate processing apparatus of Figures 2 and 3;

[0034] FIG. 7 is a view of a substrate processing apparatus according to some embodiments of the inventive concepts;

[0035] FIG. 8 is a view of FIG. 7 viewed from a first direction, and FIG. 9 is a view of FIG. 7 viewed from a second direction;

10 to 12 are views of a substrate processing apparatus according to an embodiment of the inventive concept;

13 to 15 are views of a substrate processing apparatus according to an embodiment of the inventive concept;

[0038] FIG. 16 is a plan view of a substrate processing apparatus illustrating an exhaust flow of the substrate processing apparatus according to an embodiment of the inventive concept; and

[0039] FIG. 17 is a view of a substrate processing apparatus according to an embodiment of the inventive concept.

Detailed ways

[0040] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

[0041] In this regard, the present embodiments may have different forms and should not be construed as limited to the description set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.

[0042] The terminology used herein is for the purpose of describing particular embodiments and is not intended to limit the disclosure. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will also be understood that as used herein, the terms "comprising", "comprising" and variations thereof specify the presence of stated features, integers, steps, operations, components, parts and/or groups thereof, but do not exclude the presence or addition of a or multiple other characteristics, integers, steps, operations, components, parts and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.

[0043] It will be understood that, although the terms first, second, etc. may be used herein to describe various components, components, regions, layers and/or sections, these components, components, regions, layers and/or sections should not be limited to These terms are restricted. These terms do not imply any order, quantity or importance and are only used to distinguish various components, regions, layers and/or sections. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the embodiments.

[0044] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings, in which embodiments of the present disclosure are schematically shown. In the drawings, variations from the shapes shown may be anticipated due, for example, to manufacturing techniques and/or tolerances. Thus, embodiments of the present disclosure should not be construed as limited to the specific shapes of regions illustrated herein but may include deviations in shapes that result, for example, from the manufacturing process.

[0045] FIG. 1 is a view of a substrate processing apparatus according to an embodiment of the inventive concept.

Referring to FIG. 1 , the substrate processing apparatus may include a first reactor R1, a first exhaust port 13, a second exhaust port 14, a first exhaust path 15, a second exhaust path 16, and a first transfer port. 17.

[0047] The first reactor R1 may be a space in which an object to be processed such as a substrate is processed. Although only one reactor is shown in Figure 1, multiple reactors may be implemented. The reactor may provide a space for heating, deposition, etching, polishing, ion implantation, and/or other processing of the object to be processed.

[0048] For example, the reactor may be configured to perform a movement function, a vacuum sealing function, a heating function, a venting function, and/or other functions for the object to be processed, thereby processing the object in the reactor. For example, the reactor may include a reaction space 51 for processing an object to be processed such as a substrate and an exhaust space 55 for exhausting gas from the reaction space 51 .

[0049] In alternative embodiments, the exhaust space 55 may extend to surround the reaction space 51. In another alternative embodiment, the reactor may comprise at least one cover structure, and the exhaust space 55 and/or the reaction space 51 may be formed by the cover structure. In another alternative embodiment, the reactor may include a first cover and a second cover. In this case, the exhaust space 55 may be formed in the first cover, and a processing unit (for example, a gas supply unit) for the reaction may be formed in the second cover (see FIG. 4 ).

[0050] The first exhaust port 13 may be configured to communicate with the exhaust space 55. In an embodiment, the first exhaust port 13 may be configured to communicate with a first portion of the exhaust space 55 formed around the reaction space 51 . The first exhaust port 13 may connect one end of the first exhaust path 15 to the exhaust space 55 . In an alternative embodiment, gas in the exhaust space 55 may be exhausted upwardly through the first exhaust port 13 to

[0051] First exhaust path 15. This upward discharge can be achieved through the channel structure inside the first exhaust port 13 . For example, a part of the channel structure of the first exhaust port 13 may communicate with the exhaust space 55 in a side direction, and another part of the channel structure of the first exhaust port 13 may communicate with the first exhaust path 15 in an upward direction. Connected. Therefore, an L-shaped or L-shaped channel may be formed in the first exhaust port 13 .

[0052] The second exhaust port 14 may be configured to communicate with the exhaust space 55. In an embodiment, the second exhaust port 14 may be configured to communicate with a second portion of the exhaust space 55 formed around the reaction space 51 . The second exhaust port 14 may connect one end of the second exhaust path 16 to the exhaust space 55 . In alternative embodiments, gas in the exhaust space 55 may be exhausted upwardly through the second exhaust port 14 to the second exhaust path 16 . This upward discharge can be achieved through the channel structure inside the second exhaust port 14 . For example, a portion of the channel structure of the second exhaust port 14 may communicate with the exhaust space 55 in a side direction, and another portion of the channel structure of the second exhaust port 14 may communicate with the second exhaust path 16 in an upward direction. Connected. Therefore, an L-shaped or L-shaped channel may be formed in the second exhaust port 14 .

[0053] In alternative embodiments, the first exhaust port 13 and the second exhaust port 14 may be symmetrically arranged. For example, first

The exhaust port 13 and the second exhaust port 14 may be arranged to face each other at intervals of 180 degrees in opposite directions to each other. In another embodiment, in addition to the first exhaust port 13 and the second exhaust port 14, additional exhaust ports may be provided, and these exhaust ports may be arranged at the same angular interval (see Figure 16) .

[0054] The first exhaust path 15 may be connected between the first exhaust port 13 and the first transfer port 17. One end of the first exhaust path 15 may be connected to the first exhaust port 13 , and the other end of the first exhaust path 15 may be connected to the first transfer port 17 . Therefore, a part of the gas in the reaction space 51 can be exhausted through the first exhaust port 13 , the first exhaust path 15 and the first transfer port 17 . In alternative embodiments, first exhaust path 15 may extend to surround a portion of exhaust space 55 . When the first exhaust port 13 has a channel structure for upward discharge, the first exhaust path 15 may be above the exhaust space 55 of the first reactor R1. In another alternative embodiment, the first exhaust path 15 may be arranged outside the dividing wall (not shown).

[0055] The second exhaust path 16 may be connected between the second exhaust port 14 and the first transfer port 17. One end of the second exhaust path 16 may be connected to the second exhaust port 14 , and the other end of the second exhaust path 16 may be connected to the first transfer port 17 . Therefore, another part of the gas in the reaction space 51 can be exhausted through the second exhaust port 14 , the second exhaust path 16 and the first transfer port 17 . In alternative embodiments, the second exhaust path 16 may extend to surround a portion of the exhaust space 55 . When the second exhaust port 14 has a channel structure for upward exhaust, the second exhaust path 16 may be above the exhaust space 55 of the first reactor R1. In another alternative embodiment, the second exhaust path 16 may be arranged outside the dividing wall (not shown).

[0056] The first transfer port 17 may be configured to connect the first exhaust path 15 with the second exhaust path 16. The first transfer port 17 may be configured to discharge the gas of the first exhaust path 15 and the gas of the second exhaust path 16 . For example, the first transfer port 17 may be connected to the first transfer path 18 , and the gas of the first exhaust path 15 and the gas of the second exhaust path 16 may be discharged to the first transfer path 18 through the first transfer port 17 . In alternative embodiments, the above-mentioned discharge may be a downward discharge, and such downward discharge may be achieved through a channel structure inside the first transfer port 17 . For example, a first portion of the channel structure of the first transfer port 17 may communicate with the first exhaust path 15 in a first lateral direction, and a second portion of the channel structure of the first transfer port 17 may communicate with the first lateral direction. The two exhaust paths 16 are connected, and the third part of the channel structure of the first transfer port 17 can be connected with the first transfer path 18 in a downward direction. Therefore, a T-shape or T-shaped channel may be formed in the first exhaust port 13 .

[0057] In the substrate processing apparatus having such an exhaust structure, the gas flow and exhaust flow in the reactor can be uniformly controlled by providing a plurality of exhaust ports around the reaction space 51.

[0058] Alternatively, the exhaust ports may be arranged asymmetrically for more efficient and uniform exhaust flow in the reactor. The optimal placement of exhaust ports can be determined empirically or through simulation evaluation.

[0059] In an alternative embodiment, the substrate processing apparatus may further include a partition wall (not shown) housing the first reactor R1. In this case, the first transfer path 18 may be arranged in the partition wall. This arrangement structure of the first conveying path 18 has the following technical advantage: in a multi-reactor structure in which substrate processing in multiple reactors is performed simultaneously, the exhaust structure can be simplified. This will be described in detail later with reference to Figures 2 and 3 below.

[0060] FIG. 2 is a view of a substrate processing apparatus according to other embodiments of the inventive concept. Fig. 3 is a plan view of the substrate processing apparatus. The substrate processing apparatus according to the embodiment may be a modification of the above-described substrate processing apparatus according to the embodiment. Hereinafter, repeated descriptions of the embodiments will not be given here.

[0061] The substrate processing apparatus may be a multi-reactor apparatus including multiple reactors. That is, the first reactor R1 and the second reactor R2 may be included in one substrate processing apparatus, so that a plurality of substrates can be processed at one time. Although in Figures 2 and 3

Four reactors are shown, but the disclosure is not limited thereto, and the substrate processing apparatus may include multiple reactors (ie, two or more reactors).

2 and 3, the substrate processing apparatus may include a first reactor R1, a first exhaust port 13, a second exhaust port 14, a first exhaust path 15, a second exhaust path 16, and a first exhaust port 14. Transport port 17. These components have been described in detail with reference to FIG. 1 , so a repeated description thereof will not be given here. In addition, the substrate processing apparatus may further include a second reactor R2, a third exhaust port 23, a fourth exhaust port 24, a third exhaust path 25, a fourth exhaust path 26, and a second transfer port 27. The substrate processing apparatus may further include corresponding exhaust ports, exhaust paths, and transfer end structures associated with the third reactor R3 and the fourth reactor R4.

[0063] The third exhaust port 23 may be configured to communicate with the exhaust space 55' of the second reactor R2. In an embodiment, the third exhaust port 23 may be configured to communicate with an exhaust space 55' formed surrounding the reaction space 51' of the second reactor R2. The third exhaust port 23 may connect one end of the third exhaust path 25 to the exhaust space 55'. In an alternative embodiment, gas in the exhaust space 55' may be exhausted upwardly through the third exhaust port 23 to the third exhaust path 25. This upward discharge can be achieved through the channel structure inside the third exhaust port 23 . A part of the channel structure of the third exhaust port 23 may communicate with the exhaust space 55' in a side direction, and another part of the channel structure of the third exhaust port 23 may communicate with the third exhaust path 25 in an upward direction. . Therefore, an L-shaped or L-shaped channel may be formed in the third exhaust port 23 .

[0064] The fourth exhaust port 24 may be configured to communicate with the exhaust space 55' of the second reactor R2. In an embodiment, the fourth exhaust port 24 may be configured to communicate with an exhaust space 55' formed around the reaction space 51' of the second reactor R2. The fourth exhaust port 24 may connect one end of the fourth exhaust path 26 to the exhaust space 55'. In an alternative embodiment, gas in the exhaust space 55' may be exhausted upwardly through the fourth exhaust port 24 to the fourth exhaust path 26. This upward discharge can be achieved through the channel structure inside the fourth exhaust port 24 . For example, a portion of the channel structure of the fourth exhaust port 24 may communicate with the exhaust space 55' in a side direction, while another portion of the channel structure of the fourth exhaust port 24 may communicate with the fourth exhaust path in an upward direction. 26 connected. Therefore, an L-shaped or L-shaped channel may be formed in the fourth exhaust port 24 .

[0065] In alternative embodiments, the third exhaust port 23 and the fourth exhaust port 24 may be symmetrically arranged. In another embodiment, the third exhaust port 23 and the fourth exhaust port 24 may be arranged to be evenly spaced from each other relative to the center of the reactor. In another embodiment, the third exhaust port 23 and the fourth exhaust port 24 may be provided with control valves, and the gas flow through the exhaust ports may be controlled by the control valves. Gas flow can be controlled simultaneously or individually to optimize exhaust uniformity, and the flow rate exhausted through each exhaust port can be the same or different from each other. This construction of the control valve allows more precise control of the air and exhaust flow in asymmetric exhaust systems.

[0066] The third exhaust path 25 may be connected between the third exhaust port 23 and the second transfer port 27. One end of the third exhaust path 25 may be connected to the third exhaust port 23 , and the other end of the third exhaust path 25 may be connected to the second transfer port 27 . Therefore, a part of the gas in the reaction space 51' of the second reactor R2 can be discharged through the third exhaust port 23, the third exhaust path 25 and the second transfer port 27. In alternative embodiments, third exhaust path 25 may extend to surround a portion of exhaust space 55'. When the third exhaust port 23 has a channel structure for upward discharge, the third exhaust path 25 may be above the exhaust space 55' of the second reactor R2. Furthermore, the third exhaust path 25 may be arranged outside the partition wall 100 .

[0067] The fourth exhaust path 26 may be connected between the fourth exhaust port 24 and the second transfer port 27. One end of the fourth exhaust path 26 may be connected to the fourth exhaust port 24 , and the other end of the fourth exhaust path 26 may be connected to the second transfer port 27 . Therefore, another part of the gas in the reaction space 51' can be exhausted through the fourth exhaust port 24, the fourth exhaust path 26 and the second transfer port 27. In alternative embodiments, the fourth exhaust path 26 may extend to surround the exhaust space 55'.

part. When the fourth exhaust port 24 has a channel structure for upward exhaust, the fourth exhaust path 26 may be above the exhaust space 55' of the second reactor R2. Furthermore, the fourth exhaust path 26 may be arranged outside the partition wall 100 .

[0068] The second transfer port 27 may be configured to connect the third exhaust path 25 with the fourth exhaust path 26. The second transfer port 27 may be configured to discharge the gas of the third exhaust path 25 and the gas of the fourth exhaust path 26 . For example, the second transfer port 27 may be connected to the second transfer path 28 , and the gas of the third exhaust path 25 and the fourth exhaust path 26 may be discharged to the second transfer path 28 through the second transfer port 27 . In an alternative embodiment, the above-mentioned discharge may be a downward discharge, and such downward discharge may be achieved through a channel structure inside the transfer end . For example, the first part of the channel structure of the second transfer port 27 may be connected to the third exhaust path 25 in the first lateral direction, and the second part of the channel structure of the second transfer port 27 may be connected to the third exhaust path 25 in the second lateral direction. The four exhaust paths 26 are connected, and the third part of the channel structure of the second transfer port 27 can be connected with the second transfer path 28 in the downward direction. Therefore, a T-shape or T-shaped channel may be formed in the second exhaust port 27 .

[0069] The substrate processing apparatus may be a multi-substrate processing apparatus implementing a gas supply and exhaust structure for processing a plurality of substrates simultaneously. For example, a multi-substrate processing apparatus may be a horizontal batch-type apparatus capable of processing multiple substrates simultaneously. That is, a plurality of substrates arranged in the lateral direction can be processed simultaneously. In this case, the first reactor R1 and the second reactor R2 may be used as an inner chamber for processing a plurality of substrates simultaneously. The substrate processing apparatus may further include a partition wall 100 for accommodating the inner chamber (ie, the first reactor R1 and the second reactor R2). The partition wall 100 can be used as an outer room.

[0070] The substrate processing apparatus may further include a first transfer path 18 and a second transfer path 28. The first transfer path 18 may connect the first transfer port 17 with the connection port CP to transfer gas from the first transfer port 17 to the connection port CP. The second transmission path 28 can connect the second transmission port 27 and the connection port CP to transmit the gas in the second transmission port 27 to the connection port CP. The connection port CP can be connected to the exhaust pump EP through the external path EC, and the above-mentioned gas can be discharged to the outside through the exhaust pump EP. In alternative embodiments, the connection DCP may be arranged inside or outside the dividing wall 100 . In another alternative embodiment, the external path EC may be arranged in the dividing wall 100 .

[0071] In an alternative embodiment, the connection port CP may be arranged symmetrically relative to the substrate handling device. For example, as shown in FIGS. 2 and 3 , the first connection port CP connected to the first and second transmission paths 18 and 28 and the second connection port CP' connected to the third and fourth transmission paths may be opposite to each other. Arranged symmetrically at the center of the substrate processing device.

[0072] In some embodiments, the external path EC and the exhaust pump EP may be symmetrically arranged relative to the substrate processing apparatus. For example, as shown in FIGS. 2 and 3 , the first and second external paths EC and EC' respectively connected to the first and second connection ports CP and CP' may be symmetrically arranged with respect to the central portion of the substrate processing apparatus. . In addition, the exhaust pump EP may be arranged in the center part of the substrate processing apparatus.

[0073] In another embodiment, the external path EC and the exhaust pump EP may be arranged asymmetrically with respect to the substrate processing apparatus. For example, as shown in FIGS. 7 to 9 , the first external path EC connected to the first connection port CP may extend below the partition wall 100 toward the first corner C1 of the outer chamber. In addition, the second external path EC' connected to the second connection port CP' may extend below the partition wall 100 toward the second corner C2 of the outer chamber. The exhaust pump EP may be arranged on one surface of the substrate processing apparatus, for example, corresponding to the center between the first corner C1 and the second corner C2. The first external path EC may extend from a portion extending to the first corner C1 to the exhaust pump EP. In addition, the second external path EC' may extend from a portion extending to the second corner C2 to the exhaust pump EP.

[0074] In the case of a multi-reactor installation with such an asymmetric exhaust system, the uniformity or symmetry of the gas discharge from the reactor to the exhaust pump depends on the position of the reactor in the outer chamber. According to embodiments of the inventive concept, it is possible to

Evenly by arranging the exhaust port , the exhaust path, the transfer end , the transfer path, the connection port and the external path around the reaction space and by configuring such components to be connected to an exhaust pump arranged asymmetrically with respect to the substrate processing apparatus Control gas flow and exhaust flow in the reactor. Alternatively, control valves can be added to the external path to achieve uniform exhaust flow within each reactor.

[0075] In another alternative embodiment, the first transfer path 18 and the second transfer path 28 may be arranged in the dividing wall 100 of the outer chamber. For example, the first transfer path 18 may be formed in the partition wall 100 of the outer chamber, and the first transfer port 17 disposed at the first corner C1 ( FIG. 7 ) of the partition wall 100 may be connected to the first transfer path 18 . Similarly, the second transfer path 28 may be formed inside the partition wall 100 of the outer chamber, and the second transfer port 27 disposed at the second corner C2 ( FIG. 7 ) of the partition wall 100 may be connected to the second transfer path 28 . The first transfer port 17 and the second transfer port 27 may respectively extend downwardly from the corners of the partition wall 100 . Alternatively and additionally, the first and second transfer ports 17 and 27 may extend downward along the surface of the partition wall 100, and then the first and second transfer paths 18 and 28 may be connected to the connection port CP.

[0076] FIGS. 4 to 6 are cross-sectional views of the substrate processing apparatus of FIGS. 2 and 3. FIG. 4 is a cross-sectional view taken along line IVTV' of FIG. 3 , FIG. 5 is a cross-sectional view taken along line VV' of FIG. 3 , and FIG. 6 is a cross-sectional view taken along line VI - VI' of FIG. 3 .

[0077] Referring to FIGS. 4 to 6, the reactor of the substrate processing apparatus may include a substrate supporting unit 150, a first cover 110, and a second cover 120.

[0078] The first cover 110 is located on the substrate supporting unit 150 and covers an upper portion of the reaction space 51, and may include a processing unit. The processing unit may be coupled (eg, fixed) to the first cover 110 and may employ components that perform appropriate functions according to the functionality of the reactor. For example, when the reactor performs a deposition function, the processing unit of the first cover 110 may include a reactant supply (eg, a showerhead assembly). In another embodiment, the processing unit of the first cover 110 may include a polishing pad when the reactor performs a polishing function.

[0079] The second cover 120 may be between the first cover 110 and the partition wall 100. The second cover 120 may provide a space in which a processing unit connected to the first cover 110 is accommodated. Alternatively, the second cover 120 may provide a portion of the space for the object to be processed. For example, when the reactor performs a deposition function, a reaction space 51 for deposition may be formed inside the side wall of the second cover 120, and an exhaust space 55 may be formed inside the second cover 120.

[0080] The top cover TLD may contact the second cover 120 to support the first cover 110 and the second cover 120. The top cover TLD may be supported by the partition wall 100 . The top cover TLD may be between the partition wall 100 and the cover (especially the second cover 120). A gap E may be formed between the second cover 120 and the flow control ring (FCR). The gap E may serve as a passage between the first reaction space 51 and the first exhaust space 55 . Therefore, the first reaction space 51 and the first exhaust space 55 can communicate with each other through the passage.

[0081] Referring to FIG. 4, a portion of the second cover 120 may be communicated with the first exhaust port 13. Therefore, the gas in a portion of the exhaust space 55 can be exhausted through the first exhaust port 13 . In an exemplary embodiment, the first exhaust port 13 may have an L-shaped or L-shaped channel formed therein so that the gas in the exhaust space 55 flows in a side direction and is discharged upward. Another portion of the second cover 120 may communicate with the second exhaust port 14 (Fig. 1). Therefore, the gas in another part of the exhaust space 55 can be exhausted through the second exhaust port 14 (Fig. 1).

[0082] The gas exhausted upward through the first exhaust port 13 may be exhausted in relation to the first exhaust path 15. As described above, the first exhaust path 15 may extend to surround at least a portion of the first exhaust space 55 . Furthermore, as shown in FIGS. 1 , 4 , 5 and 6 , the first exhaust path 15 may be connected to the first transfer port 17 . Similarly, gas exhausted upwardly through second exhaust port 14 may be exhausted in relation to second exhaust path 16 (Fig. 1). The second exhaust path 16 (Fig. 1) may extend to surround another portion of the first exhaust space 55 and, as shown in Figs. 1, 4, 5, and 6, the second exhaust path 16 may be connected to the first delivery end

Mouth 17.

[0083] The first transfer port 17 may have a T-shaped or T-shaped (eg, y-shaped) channel formed therein. The gas in the first exhaust path 15 may be introduced into the first transfer port 17 along a first direction (eg, a first lateral direction), while the gas in the second exhaust path 16 may be introduced into a second direction (eg, a second lateral direction). One transport port 17. In addition, the gas introduced in the first direction and the second direction may be discharged in a third direction (eg, downward direction).

[0084] In alternative embodiments, the FCR may be between the cap TLD and the substrate support unit 150. The FCR is disposed on the top cover TLD and may be disposed slidably on the top cover TLD. The FCR may be spaced apart from the substrate support unit 150 to form a gap G, and the pressure balance between the reaction space 51 and the inner space of the outer chamber may be controlled by adjusting the gap G.

[0085] In another alternative embodiment, three or more exhaust ports may be arranged. For example, as shown in Figure 16, each reactor may be provided with four exhaust ports, and the four exhaust ports may be spaced apart from each other at 90 degree intervals. In other words, multiple exhaust ports may be arranged per reactor, and the multiple exhaust ports may be spaced apart from each other at intervals of 360/n degrees. In this case, n is the number of the plurality of exhaust terminals , and may be a natural number of 2 or more. Alternatively, multiple exhaust ports can be arranged asymmetrically to achieve optimized uniform exhaust flow, and the spacing and angle can be determined through experimental and simulation evaluations.

[0086] In another embodiment, as shown in Figure 17, multiple control valves may be installed in each of multiple exhaust ports . A plurality of control valves may be connected to the exhaust port and configured to control the flow of gas through the respective exhaust port. For example, a plurality of control valves may individually control gas flow through an exhaust port located a first distance from the delivery port to be less than gas flow through an exhaust port located a second distance from the delivery port, the second distance being greater than First distance. This construction of the control valve allows for more uniform control of the air and exhaust flow in asymmetric exhaust systems.

[0087] FIGS. 7-9 are views of a substrate processing apparatus according to some embodiments of the inventive concept. In more detail, FIG. 7 shows parts of the substrate processing apparatus except the cover, exhaust port, exhaust path and transfer port (i.e. transfer paths 18 and 28, connection terminals DCP and CP', connection to the external pump External path EC, etc.). FIG. 8 is a view of FIG. 7 viewed from a first direction, and FIG. 9 is a view of FIG. 7 viewed from a second direction. The substrate processing apparatus according to the embodiment may be a modification of the above-described substrate processing apparatus according to the embodiment. Hereinafter, repeated descriptions of the embodiments will not be given here.

[0088] Referring to FIGS. 7 to 9, transfer paths 18 (18a and 18b) and 28 (28a and 28b) are formed in the partition wall 100. The transfer paths 18 and 28 are connected to the external path EC through the connection ports CP and CP', and the external path EC is connected to the main exhaust path 211 . Therefore, the gas in the reaction space is discharged to the exhaust pump EP via the transfer ports 17 and 27, the transfer paths 18 and 28, the external path EC and the main exhaust path 211.

As shown in Figure 8, the two reactors R1a and R1b in the first direction share the internal transfer path 18 (18a and 18b), in the opposite direction to the first direction (e.g. A', not shown) The remaining two reactors share another internal transfer path 28 (28a and 28b). The two internal transmission paths 18, 28 are connected to the external path EC via corresponding connections DCP. Figures 7, 8 and 9 show that the four reactors share the external path EC, the main exhaust path 211 and the exhaust pump EP. An isolation valve 210 may be added to the main exhaust path 211 . Therefore, the isolation valve 210 can protect the exhaust pump EP from the outside atmosphere during maintenance. Additionally, a pressure control valve (eg, a throttle valve) may be added to the main exhaust path 211 . The outer path EC may be fixed so as not to move in close contact with the lower surface of the partition wall 100 of the outer chamber. In an alternative embodiment, the two internal transfer paths 18 and 28 may be connected to each other within the bottom wall of the dividing wall 100 of the outer chamber and directly to the main exhaust path 211 without the external path EC.

[0090] FIGS. 10 to 12 are views of a substrate processing apparatus according to an embodiment of the inventive concept. The substrate processing apparatus according to the embodiment may be a modification of the above-described substrate processing apparatus according to the embodiment. In the following, no examples will be given here

of repeated descriptions.

[0091] Figure 10 shows the upper surface of multi-reactor chamber 311. A plurality of reactors 312 are arranged in the chamber 311, and one side of each reactor 312 is connected to the exhaust port 313. Figure 10 shows each reactor 312 connected to each exhaust port 313.

[0092] Figure 11 shows a side perspective view of reactor 312. The reaction space of the reactor 312 may be defined by a cover 314 having an exhaust pipe, an FCR 315 disposed below the cover 314, and a gas supply (such as a spray head (not shown)) disposed in the inner space surrounded by the cover 314, and A space surrounded by a substrate heating device, such as a heating block (not shown), is arranged to face the gas supply.

[0093] Cover 314 and FCR 315 may be spaced apart from each other to form a gap. A space of, for example, 1 mm may be formed between them, and the gas in the reaction space may be discharged to an exhaust pump (not shown) through the gap (ie, a separate space) via the exhaust space 316 and the exhaust port 313 inside the cover 314 . Exhaust port 313 may include a channel for venting gas downwardly.

[0094] In FIGS. 10 to 12, the exhaust path of the gas is indicated by an arrow. As can be seen from the figure, the exhaust port 313 is arranged at the side of the reaction space, so that the exhaust flow around the substrate is uneven and may be biased to one side. This may lead to problems with poor uniformity of film thickness and inhomogeneity of film properties depending on the location.

[0095] FIGS. 13 to 15 are views of a substrate processing apparatus according to an embodiment of the inventive concept. The substrate processing apparatus according to the embodiment may be a modification of the above-described substrate processing apparatus according to the embodiment. Hereinafter, repeated descriptions of the embodiments will not be given here.

[0096] Referring to FIG. 13, the substrate processing apparatus has a first exhaust port 13 and a second exhaust port 14 arranged at both ends of the second cover 120. The first exhaust port 13 and the second exhaust port 14 are connected to the first transfer port 17 through the first exhaust path 15 and the second exhaust path 16 respectively. The first transfer port 17 is connected to the transfer path 18 or 28 (Fig. 8) inserted within the partition wall 100 (Fig. 8). The discharge sequence thereafter to the exhaust pump EP (Fig. 8) is the same as described in Figs. 8 and 9.

[0097] According to the exhaust configuration of FIGS. 13 and 14, the gas in the reactor can be uniformly discharged in both directions through the first exhaust port 13 and the second exhaust port 14 without being biased to one side and discharged. In more detail, the gas exhausted through the separate space between the second cover 120 and the FCR is exhausted upward in both directions through the first exhaust port 13 and the second exhaust port 14 . Thereafter, the gas is transferred to the first transfer port 17 through the first exhaust path 15 and the second exhaust path 16, and the gas is discharged downward through the first transfer port 17. The gas discharged downward is discharged to the exhaust pump EP through the internal transfer path 18 or 28 in the chamber wall, the connection port CP, the external path EC and the main exhaust path 211. In Figure 14, two exhaust ports 13 and 14 are provided in two directions of the second cover 120, but by providing additional exhaust ports as shown in Figure 16, more uniform exhaust can be achieved in the reactor. gas efficiency.

[0098] Figure 15 is a plan view of a multi-reactor chamber to which the reactor according to Figure 14 is applied and showing its exhaust gas flow. 13 to 15 and 7, the gas exhausted from the reaction space passes through the first exhaust port 13 connected to the cover 120, the second exhaust port 14 connected to the cover 120, the first exhaust path 15, and the Two exhaust paths 16 and a first transfer port 17 . Thereafter, the gas is discharged to the exhaust pump EP through the transfer path 18 or 28, the connection terminal DCP, the external path EC and the main exhaust path 211. FIG. 15 illustrates air flow 20 exhausted through the exhaust space 120 to the first exhaust port 13 and the second exhaust port 14 and exhausted through the first exhaust path 15 and the second exhaust path 16 to the first transfer port 17 Airflow 21.

[0100] According to an embodiment of the inventive concept, as shown in Figure 7, two reactors share one set of internal transfer paths 18a and 18b, and the remaining two reactors share another set of internal transfer paths 28a and 28b. The two internal transfer paths 18 and 28 of different sets share the external path EC, the main exhaust path 211 and the exhaust pump EP.

[0101] According to FIG. 13, two exhaust ports 13 and 14 are provided in the cover 120. However, the present disclosure is not limited thereto, and may

An exhaust port is also provided to improve the uniformity of exhaust efficiency. FIG. 16 shows a modified embodiment of another exhaust system according to an embodiment of the inventive concept, which can achieve such uniformity of exhaust efficiency.

[0102] Referring to FIG. 16, four exhaust ports, namely, the first exhaust port 13, the second exhaust port 14, the third exhaust port 23, and the fourth exhaust port 24 are connected to the exhaust pipe 161. The first and fourth exhaust ports 13, 24 are connected to an exhaust pipe 161 (cover 120 of FIG. 13) surrounding the reaction space and an external exhaust path 167, and one side surface of the external exhaust path 167 is connected to the first conveyor Port 17. The first transfer port 17 is connected to a transfer path formed within the chamber wall (see internal transfer path 18 or 28 of Figure 7). With this structure of Figure 16, more uniform exhaust gas can be achieved in the reaction space.

[0103] In FIG. 16, four exhaust ports are connected to the exhaust pipe 161, but the present disclosure is not limited thereto, and the exhaust ports may be arranged symmetrically with respect to the center of the exhaust pipe 161. For example, 2, 3, 4, 5, 6...n exhaust ports can be arranged at even intervals. In this case, the exhaust ports are arranged at angles of 180 degrees (n = 2), 120 degrees (n = 3), 90 degrees (n = 4), 72 degrees (n = 5), 60 degrees ( n = 6)...360/n degrees. In this case, n is the number of multiple exhaust ports , and can be a natural number above 2.

[0104] Alternatively, the exhaust ports may be arranged asymmetrically for more efficient and uniform exhaust flow in the reactor. The optimal placement of exhaust ports can be determined empirically or through simulation evaluation.

[0105] FIG. 17 shows a substrate processing apparatus capable of achieving a more uniform exhaust gas flow, which is a modified embodiment of the substrate processing apparatus according to the embodiment of FIG. 16.

[0106] Referring to Figure 17, the control valves are respectively connected to the exhaust ports. The first control valve 168 is arranged between the first exhaust port 13 and the exhaust pipe 161 , and the second control valve 169 is arranged between the second exhaust port 14 and the exhaust pipe 161 . Similarly, the third control valve 170 and the fourth control valve 171 are arranged between the third exhaust port 23 and the exhaust pipe 161 and between the fourth exhaust port 24 and the exhaust pipe 161, respectively. The control valve allows more precise control of the exhaust efficiency of the gas exhausted to the external exhaust path 167 in the reaction space, thereby achieving more uniform and effective exhaust. Furthermore, by controlling the valve, a more uniform gas flow can be achieved in the reaction space.

[0107] In the substrate processing apparatus of FIG. 17, by individually controlling the opening and closing sequence, speed, or cross-sectional area of the air flow path of each control valve, uniform air flow can be achieved inside the reaction space, and problems due to exhaust gas can be solved. The problem of uneven airflow caused by the asymmetric arrangement of terminals.

[0108] For example, the opening and closing speed of the first control valve 168 and the fourth control valve 171 respectively connected to the first exhaust port 13 and the fourth exhaust port 24 near the first transfer port 17 and each control valve The cross-sectional area of the internal gas flow path may be set to the first value, while the second control valve 169 and the third exhaust port 169 and 23 are respectively connected to the second exhaust port 14 and the third exhaust port 23 relatively far away from the first transfer port 17. The opening and closing speeds of the three control valves 170 and the cross-sectional area of the gas flow path inside each control valve may be set to a second value different from the first value. Through these configurations, gas flow and uniformity in the reactor can be manually controlled. That is, in a multi-reactor device with an asymmetrically arranged exhaust system, the gas flow and exhaust flow in the reactor can be manually controlled to make them more uniform. As a result, reproducible processing implementations during reactions can be achieved.

[0109] For a clear understanding of the present disclosure, the shape of each part of the drawings should be considered in a descriptive sense and may be modified into various shapes other than those shown.

[0110] It should be understood that the embodiments described herein should be considered in a descriptive sense only and not for purposes of limitation. Descriptions of features or aspects within each embodiment should typically be considered as available for other similar features or aspects in other embodiments.

[0111] Although one or more embodiments have been described with reference to the accompanying drawings, one of ordinary skill in the art will understand that

Various changes in form and details may be made without departing from the spirit and scope of the disclosure as defined by the following claims.