Advanced platform for passivating crystalline silicon solar cells

Advanced platform technology field for passivating crystalline silicon solar cells

[0001] The embodiments of the present invention generally relate to an apparatus and method for forming a layer on a substrate for forming a solar cell device. The present invention is particularly useful for the manufacture of crystalline silicon solar cells.

Background technique

[0002] Photovoltaic (PV) cells or solar cells are devices that convert sunlight into direct current (DC) power. A typical PV cell includes a p-type crystalline silicon circle or p-type substrate with a thickness generally less than about 0.3 mm, wherein a thin layer of n-type silicon material is disposed on top of the p-type substrate. The voltage or photovoltage generated by the PV cell and the current generated depend on the material properties of the p-η junction, the nature of the interface between the deposited layers, and the surface area of the device. When exposed to sunlight (consisting of energy from photons), the p-n junction of the PV cell generates free electron and hole pairs. The electric field formed in the depletion region of the p-n junction separates free electrons and holes, generating a voltage. When the PV cell is connected to an electrical load, the circuit from the η side to the ρ side allows electrons to flow. Electrical power is the product of current and voltage generated when electrons and holes move through an external electrical load and finally recombine. Each solar cell generates a specific amount of electric power. Multiple solar cells are tiled (t set e) into modules that are sized to deliver the desired amount of system power.

[0003] In the past ten years, the PV market has experienced an annual growth rate greater than 30% growth. Some articles have suggested that the global solar cell power capacity may exceed 10 GW in the near future. Po has estimated that more than 90% of all photovoltaic modules are based on silicon wafers. The high market growth rate combined with the need to fully reduce the cost of solar power has caused many severe challenges to the production and development of silicon wafers for photovoltaic devices.

[0004] There are various methods for manufacturing active regions and current-carrying metal wires or conductors of formed solar cells. Manufacturing high-efficiency human solar batteries at low cost is key to making human solar batteries more competitive in the production of subsidies for human-scale consumption. The efficiency of a solar cell is directly related to the ability of the cell to collect the charge generated by the photons absorbed in the various layers. A good front surface passivation layer and back surface passivation layer can help reduce the recombination of electrons or holes generated in the formed solar cell device, and redirect the electrons and holes back to the solar cell to generate the desired light Current. When the electrons and holes are recombined, the incident solar energy is re-emitted as heat or light, thereby reducing the conversion efficiency of the solar cell. In addition, generally speaking, the passivation layer will have the desired optical properties to minimize light reflection and light absorption when light passes through the passivation layer, and have the following desired functional properties: "surface passivate" on top On the surface provided with the passivation layer, "bulk passivate" the substrate surface and adjacent areas, and store the desired charge, to "field passivate" the solar energy provided with the passivation layer The surface of the battery substrate. The formation of the desired passivation layer on the solar cell can greatly improve the efficiency of the solar cell, however, the refractive index of one or more front-side passivation layers formed The number (η) and the inherent extinction coefficient (k) need to be adjusted with the surrounding layers to minimize light reflection and increase the light absorption of the solar cell device. However, the deposition rate and thus the final number of substrates that can be processed in a set period of time have an impact on the refractive index and k value and the physical properties of the film, such as density.

[0005] In order to meet these challenges, the following solar cell processing requirements generally need to be met: 1) The cost of ownership (Co0) of substrate manufacturing equipment needs to be improved (for example, high system output, high machine working time, and inexpensive Machine, low cost of consumables); 2) need to increase the processing area in each processing cycle (for example, reduce the processing of each Wp); and 3) need to control the quality of the formation layer and film stack forming process and the quality needs Enough to produce a very efficient sun

Can battery. Therefore, there is a need to cost-effectively form and manufacture silicon sheets for solar cell applications.

[0006] In addition, as the demand for solar cell devices continues to grow, it is a trend to reduce the cost by increasing substrate yield and improving the quality of the deposition process performed on the substrate. However, the costs associated with the production and support of all processing components in the solar cell production line continue to increase rapidly. In order to reduce this cost while also reducing surface contamination, it is necessary to design a novel solar cell processing system and processing sequence with high output, improved device yield, reduced number of substrate processing steps, and compact system footprint.

Summary of the invention

[0007] Aspects of the present invention generally provide a high-throughput substrate processing system for forming one or more regions of a solar cell device. In one configuration of the processing system, one or more solar cell passivation layers or dielectric layers are deposited and further processed in one or more processing chambers included in the high-throughput substrate processing system. The processing chamber can be, for example, a plasma-enhanced chemical vapor deposition (PECVD) chamber, a low pressure chemical vapor deposition (LPCVD) chamber, an atomic layer deposition (ALD) chamber, a physical vapor deposition (PVD) or a sputtering chamber Chamber, heat treatment chamber (for example, RTA or RTO chamber), substrate redirection chamber (for example, flip chamber), and/or other similar processing chambers.

[0008] In one embodiment, a solar cell processing system is provided. The solar cell processing system includes: a substrate automation system having a substrate configured to move a substrate in a first direction through a processing area sequentially One or more conveyors, in which the processing area is maintained at a pressure lower than atmospheric pressure; a first processing chamber, the first processing chamber having two or more first deposition sources arranged in the processing area , Wherein each of the first deposition sources is configured to individually deliver the processing gas to the surface of each of the substrates when the substrate is moved through the processing area relative to the two or more first deposition sources; and second A processing chamber, the second processing chamber has two or more first deposition sources disposed in the processing area, wherein each second deposition source is configured to be opposite to the two or more second deposition sources on the substrate When the deposition source is moved through the processing area, the processing gas is individually delivered to the surface of each of the substrates.

[0009] In another embodiment, a solar cell processing system is provided. The solar cell processing system includes a substrate automation system having two substrates configured to move a substrate through a processing area in a first direction. Two or more conveyors, wherein the processing area is maintained at a pressure lower than atmospheric pressure; two or more first deposition sources, each of the two or more first deposition sources is set in the processing In the area, each of the two or more first deposition sources is arranged in the first direction and at an interval of one distance from the first part of one of the two or more conveyors, wherein each of the first deposition sources A deposition source is configured to individually deliver the first processing gas to the first portion of the conveyor when the substrate is transferred through the processing area relative to the two or more first deposition sources; one or more first energy sources , The one or more first energy sources are configured to deliver energy to an area formed between the first part of the conveyor and one of the two or more first deposition sources; and two or more The second deposition source, each of the two or more second deposition sources is arranged in the processing area, and is separated from the second part of one of the two or more conveyors along the first direction. The spacing relationship of the distance sets each of two or more second deposition sources, wherein each second deposition source is configured to be transported through the processing area relative to the two or more second deposition sources on the substrate Time will The second process gas is separately delivered to the second part of the conveyor.

[0010] In yet another embodiment, there is provided a method of forming a solar cell, the method comprising the following steps: reducing the pressure in the processing area of the solar cell processing system to a pressure lower than atmospheric pressure; positioning the substrate at least Partly disposed on the substrate automation system in the processing area, wherein the substrate automation system is configured to transfer the substrate through at least a portion of the processing area in a first direction; and transport the first deposition source from two or more first deposition sources. A processing gas

Each of the two or more first deposition sources is arranged in the processing area, and the two or more are arranged in a spaced relationship along the first direction and a distance from the first part of the substrate automation system. Each of the first deposition sources, wherein each of the two or more first deposition sources is configured to deliver the first processing gas to the substrate formed on the first deposition source and positioned on the substrate automation system A deposition area between at least one; and forming a plasma in the deposition area by delivering energy from the source.

Description of the drawings

[0011] In order to understand in detail the manner in which the above-mentioned characteristic structure of the present invention is obtained, the present invention briefly summarized above can be described in more detail with reference to the embodiments, and some embodiments of the embodiments are illustrated in the accompanying drawings. It should be noted, however, that the drawings only illustrate typical embodiments of the present invention and therefore should not be considered as limiting the scope of the present invention, as the present invention may allow other equivalent embodiments.

[0012] FIG. 1 is an unintended isometric view of an embodiment of a substrate processing system.

[0013] FIG. 2A is a schematic cross-sectional plan view of an automated substrate processing system according to an embodiment described herein.

[0014] FIG. 2B is a schematic cross-sectional plan view of an automated substrate processing system according to an embodiment described herein.

[0015] Figure 2C is a schematic side cross-sectional view of an automated substrate processing system according to one embodiment described herein.

[0016] FIG. 3 is a cross-sectional view of a solar cell substrate formed in a substrate processing system according to an embodiment described herein.

[0017] FIG. 4 is a schematic side cross-sectional view of a processing chamber according to an embodiment of the present invention.

[0018] FIG. 5A is a schematic side cross-sectional view of a deposition chamber according to an embodiment of the present invention.

[0019] FIG. 5B is a schematic side cross-sectional view of the deposition chamber illustrated in FIG. 5A according to an embodiment of the present invention.

[0020] FIG. 5C is a more detailed schematic side cross-sectional view of the area of the deposition chamber illustrated in FIG. 5A according to an embodiment of the present invention.

[0021] FIG. 5D is a schematic side cross-sectional view of the area of the deposition chamber illustrated in FIG. 5A according to an embodiment of the present invention.

[0022] FIG. 6 is a schematic side cross-sectional view of a deposition chamber according to an embodiment of the present invention.

[0023] FIG. 7A is a schematic partial cross-sectional isometric view of a redirection chamber according to an embodiment of the present invention.

[0024] FIG. 7B is a schematic side cross-sectional view of a redirection chamber according to an embodiment of the present invention.

[0025] FIG. 7A is a schematic plan view of a substrate processing system according to an embodiment described herein.

[0026] FIG. 7B is a schematic plan view of a substrate processing system according to an embodiment described herein.

[0027] FIG. 7C is a schematic plan view of a substrate processing system according to an embodiment described herein.

[0028] FIG. 8 illustrates a processing sequence that may be executed in an automated substrate processing system according to embodiments described herein. [0029] For the sake of clarity, the same element symbols are used where possible to indicate the same elements common to the figures. It is conceivable that the features of one embodiment may be advantageously incorporated into other embodiments without further elaboration.

Detailed ways

[0030] The present invention generally provides for in-situ processing for forming solar cell devices

High-yield substrate processing system or cluster tool for regional film stacking. In one configuration, the film stack formed on each of the substrates contains one or more passivation layers or dielectric layers in one or more processing chambers included in a high-throughput substrate processing system The one or more passivation layers or dielectric layers are deposited and further processed. The processing chamber can be, for example, a plasma enhanced chemical vapor deposition (PECVD) chamber, a low pressure chemical vapor deposition (LPCVD) chamber, an atomic layer deposition (ALD) chamber, a physical vapor deposition (PVD) chamber, heat treatment Chamber (for example, RTA or RT0 chamber), substrate redirection chamber (for example, flip chamber), and/or other similar processing chambers.

[0031] The high-throughput substrate processing system may include one or more deposition chambers in which the substrate is exposed to one or more vapor phase materials and radio frequency plasma. In one embodiment, the processing system includes at least one plasma-enhanced chemical vapor deposition (PECVD) processing chamber, which is adapted to process multiple substrates simultaneously when they pass through the system in a straight line. . In one embodiment, the solar cell substrates are simultaneously transferred through the linear system in a vacuum or inert environment to prevent substrate contamination and improve substrate yield. In some embodiments, the substrates 200 are arranged in a linear array (such as those illustrated in FIGS. 2A to 2B) for processing, which is the same as processing vertically stacked substrates (eg, batches stacked in a crystal cassette). (Substrate) or the opposite of processing the planar array substrate which is usually transferred in batches on the substrate carrier. This processing of substrates arranged in a linear array allows each of the substrates to be directly and uniformly exposed to the generated plasma, radiant heat, and/or process gas. A linear array may contain a subset or group of substrates that are similarly processed as they are sequentially transferred through the processing system. In this configuration, the subset or group of substrates are generally substrates arranged in a similarly arranged linear array in a direction perpendicular to the direction of substrate transfer, and thus will be similarly processed at any given time during the processing sequence. Substrate. Therefore, processing multiple sets of substrates arranged in a linear array does not rely on diffusion-type processes or energy Sequential transfer of quantities from one substrate to the next (such as a diffusion process or sequential transfer that is not expected to be found in the vertical stacking of conventional configurations or back-to-back substrate batch processing).

[0032] Those skilled in the art will understand that the conventional substrate processing system requires batch substrates to move in multiple directions as the substrate is transferred through the processing system. The conventional substrate processing system will require structural elements (such as a substrate carrier) in order to Support and maintain the alignment and position of the substrates relative to each other during processing. The addition of substrate carriers in the processing system leads to many undesirable processing problems, increased system complexity, and device throughput issues. In one example, due to the increase in the quality of the substrate carrier in the processing area of the processing chamber during processing, it is more difficult to achieve rapid heating or cooling of the substrate due to the increased thermal mass and thermal inertia of the chamber caused by the addition of the substrate carrier. The addition of the substrate carrier also increases the complexity of the system, because the substrate carrier needs to be cleaned and returned continuously after being processed in the system, so that the substrate carrier can receive the next batch of substrates. In addition, the addition of the substrate carrier creates a need for additional automation and robotic hardware to position the substrate in the substrate carrier before the substrate is processed in the system and then remove the substrate from the substrate carrier after the substrate is processed in the system. As the solar cell substrate becomes thinner and thinner (for example, <0. 3mm), the demand for minimizing the number of robot picking, transferring, and dropping movements performed on the substrate has greatly increased. Therefore, in one embodiment of the present invention, the processing system 100 (FIG. 1) is configured such that no "pick and put" type robotic transfer step is performed during the movement of the substrate through the processing system. The pick-and-drop type transfer process generally includes the following steps: by using robot blades, vacuum clamping devices or other similar independent repositioning methods to transfer substrates from one position to another in the processing system, the individual repositioning The positioning method requires repeated interaction of the end effector to enable the substrate to be moved from one point in the system to another. In addition, usually "pick and put" type devices only minimally support the weight of the transferred substrate to reduce the number of particles produced by frequent interactions between the substrate and the end effector, which is moving the substrate through the system. When supporting the substrate.

[0033] The embodiments of the present invention disclosed herein can be used to quickly form a high-throughput substrate processing system (such as FIG. 1

To the next generation solar cell device in the processing system 100) illustrated in FIGS. 2B and 7A to 7C and discussed further below. In some configurations, next-generation solar cell devices will include multiple deposition layers (such as advanced passivation layers) formed on both sides of the solar cell substrate in the processing system 100. As mentioned above, forming layers (such as high-quality passivation layers) on both sides of the substrate can reduce carrier recombination, redirect electrons and holes back to the solar cell to generate the desired photocurrent, and act as a backside reflection To better collect incident solar energy. However, as those skilled in the art will understand, the processing system forms and processes multiple layers on both sides of the substrate while maintaining high substrate throughput (eg, >3000 substrates per hour) and providing repeatable desired film quality. The ability of the solar cell manufacturing industry is difficult to grasp. The processing system configuration described herein is thus generally configured to reliably form high-quality advanced passivation layers on both surfaces of the solar cell substrate.

[0034] FIGS. 1 and 2A to 2B illustrate a substrate processing system 100 according to an embodiment of the present invention. The substrate processing system 100 is used to perform one or more solar cell manufacturing processes on a linear array of substrates. In one embodiment, the substrate processing system 100 may include: a substrate receiving chamber 105, a dynamic load lock chamber 120, a preprocessing chamber 130, at least one processing chamber (such as a first processing chamber 140, a second processing chamber) The chamber 160 and the third processing chamber 180), at least one transfer chamber (such as the transfer chambers 150 and 170), the buffer chamber 190, the second dynamic load lock chamber 192, and the substrate unloading chamber 195. Each of FIGS. 7A to 7C, which will be discussed further below, illustrates some alternative configurations of the processing system 100 according to some embodiments of the present invention. In general, the processing chambers 130-190 may include one of the following types of chambers: PECVD chamber, LPCVD chamber, hot-wire chemical vapor deposition (HWCVD) chamber, ion implantation/doping chamber, plasma Bulk nitridation chamber, atomic layer deposition (ALD) chamber, physical vapor deposition (PVD) or sputtering chamber, plasma or vapor phase chemical etching chamber, heat treatment chamber (for example, RTA or RT0 chamber), substrate Reorientation chamber (eg, flip chamber) and/or other similar processing chambers.

[0035] FIG. 3 illustrates a cross-sectional view of a solar cell substrate 310 having a passivation/ARC layer stack 320 formed on the front surface (eg, top surface 305) of the solar cell device 300, front The side electrical contact 307, the back surface passivation layer stack 340 on the back surface (for example, the back surface 306), and the conductive layer 345 forming the back side electrical contact 346, the back side electrical contact 346 passing through the passivation layer The through hole region 347 formed in the stack 340 electrically contacts the surface of the substrate 310. In one embodiment, the substrate 310 includes a silicon substrate having a p-type dopant disposed in the silicon substrate to form a part of the solar cell device 300. In this configuration, the substrate 310 may have a p-type doped base region 301 and an n-type doped base region 301 and n-type doped region generally formed on the substrate 310 by doping and diffusion/annealing processes (although other processes including ion implantation may be used). Miscellaneous emitter region 302. The substrate 310 also includes a p-n junction region 303 disposed between the base region 301 and the emitter region 302 of the solar cell, and the substrate 310 is configured to irradiate the solar cell device 300 by incident photons "I" of light from the sun 350. When generating electron-hole pairs in the area. The conductive layer 345 and the front-side electrical contact 307 may include metals such as aluminum (Al), silver (Ag), tin (Sn), cobalt (Co), nickel (Ni), zinc (Zn), lead (Pb) , Pigeon (W), titanium (Ti), tongs (Ta), nickel sail (NiV), or other similar materials, and the above composition).

[0036] In one example, the formed solar cell device 300 includes a passivation/ARC layer stack 320 and a back surface passivation layer stack 340, the passivation/ARC layer stack 320 and the back surface passivation layer stack Each of the stacks 340 contains at least two or more layers of deposited material all formed on the substrate 310 in the processing system 100. The substrate 310 similar to the substrate 200 discussed herein may include monocrystalline silicon, multi-crystalline silicon (multi-crystalline silicon), or polycrystalline silicon (polycrystalline silicon), but the substrate 310 may also be suitable for including Ge and non-crystalline silicon. Shenhua (GaAs), Quehua Cadmium (CdTe), Cadmium Sulfide (CdS), Copper Ingot Selenide (CIGS), Copper Ingot Selenide (CuInSe)₂), phosphide fetters (GaInP₂), organic materials and heterojunction batteries used to convert sunlight into electricity (such as GalnP/GaAs/Ge or ZnSe/GaAs/

Ge substrate) is useful. The passivation/ARC layer stack 320 may include a first layer 321 in contact with the substrate surface 305 and a second layer 322 disposed on the first layer 321. In one example, the first layer 321 may include a nitride layer formed by a plasma-enhanced chemical vapor deposition (PECVD) process with a thickness between about 50 angstroms (A) and about 350 angstroms (such as 150 people thick). Silicon (SiN) layer, and has a desired amount of (QJ) trapped charge formed in the first layer 321 to effectively passivate the substrate surface 305. In one example, the second layer 322 may include a PECVD process formed A silicon nitride (SiN) layer with a thickness of between about 400 A and about 700 A (such as 600 A thick), and has a desired amount (Q) formed in the second layer 322₂) To trap the charge to effectively passivate the substrate surface 305. It should be noted that the type of charge (such as a positive net charge or a negative net charge based on the sum of $ and Q?) can be set according to preference according to the type of the substrate on which the passivation layer is formed. However, in one example, it is desirable to achieve a temperature of about 5 X 10 above the surface of the n-type substrate.¹¹Coulomb/cm²To about 1 X 10¹³Coulomb/cm²The total net positive charge is expected to be about 5 X 10 above the surface of the p-type substrate.¹¹Coulomb/cm²To about 1 X 10¹³Coulomb/cm²The total net negative charge between. In this configuration of the solar cell device 300, the back surface passivation layer stack 340 may include a first back layer 341 in contact with the back surface 306 of the substrate and a second back layer 342 disposed on the first back layer 341 . In one example, the first backside layer 341 may include aluminum oxide (Al) formed by a PECVD process with a thickness of between about 200 angstroms (A> and about 1300 angstroms)._x0_y) Layer, and has a desired amount (Q₃) To trap the charge to effectively passivate the back surface 306 of the substrate. In one example, the second back layer 342 may include a silicon nitride (SiN) layer formed by a PECVD process with a thickness between about 600 A and about 2500 A, and has a layer formed on the second back layer 342. Expected amount in (Q₄) To trap the charge to effectively help passivate the back surface of the substrate 306. It should be noted that, as discussed above, the type of charge can be set according to preference according to the type of substrate on which the passivation layer is formed (such as based on Q₃With Q₄The sum of the positive net charge or the negative net charge). In an embodiment of the solar cell device 300, as shown in FIG. 3, the selection of the passivation/ARC layer stack 320 and the rear surface passivation layer stack 340 will respectively minimize the front surface reflection Ri in the formed device. And maximize the back surface reflection R₂, To improve the efficiency of solar cell devices.

[0037] In some embodiments, as illustrated in FIGS. 2A to 2B, the substrate processing system 100 has a processing area 210, and the substrate automation system 515 is used to remove the linear array of substrates from the substrate in the direction "M" during processing. The substrate receiving chamber 105 is transferred through the processing area 210 to the substrate unloading chamber 195 (FIGS. 5A to 5C ). As illustrated in FIGS. 1 to 2C, each of the substrate receiving chamber 105 and the substrate unloading chamber 195 has at least one substrate transfer area (such as the substrate transfer area 104A) positioned on one side of the substrate automation system 515 , 104B, 108A and 108B). However, this configuration is not intended to limit the scope of the invention described herein.

[0038] Referring to FIG. 2A, in one embodiment, the substrate receiving chamber 105 includes one or more automated devices (such as an actuator assembly 122) configured to receive substrates from The substrates of the interface 121 (for example, the substrate 200) are transferred, and the substrates are positioned on a part of the substrate automation system 515, so that the substrates can be transferred through various processing chambers existing in the processing system 100. The substrate transfer interface 121 will generally receive substrates from an upstream location (for example, an upstream processing module in a solar cell manufacturing line). In operation, in the substrate receiving chamber 105, the substrate automation system 515 is generally loaded with an unprocessed substrate 200. In one embodiment, the substrate 200 is transferred to the substrate transfer interface 121 via one or more modular substrate conveyors 123, the one or more modular substrate conveyors 123 are configured to receive a plurality of substrates 200 Crystal box or stacking box. In one embodiment, the actuator assembly 122 may be a SCARA, six-axis, parallel, belt conveyor, or linear robot adapted to transfer the substrate from the substrate transfer interface 121 to a part of the substrate automation system 515. In one instance, actuation

The device component 122 is a Quattro Parallel Robot available from Adept Technology Inc., Presandton, California, U.S._oIn another example, the actuator assembly 122 includes one or more rollers or belts available from Applied Materials Italia S. r. 1. branch of Applied Materials, Inc., Santa Clara, California, USA Conveyor.

[0039] In one embodiment, the substrate automation system 515 has a first end 209 and a second end 211, where the substrate 200 enters the substrate automation system at the first end 209, and has a processed substrate on which material is deposited The 200 is removed from the substrate automation system 515 at the second end 211. At the first end 209, the input conveyor 220 included in the substrate automation system 515 supports and guides the substrate 200 into the dynamic load lock chamber 120, which then transfers the substrate 200 to the pretreatment chamber 130 in. A series of intermediate conveyors 221 are generally used to support and guide substrates through various processing chambers present in the processing system 100. At the second end 211, the exit conveyor 222 included in the substrate automation system 515 receives the substrate 200 that has been processed in the processing system 100. Although a substrate automation system 515 with a plurality of independent conveyors 220, 221, and 222 has been illustrated, a continuous web of material with a continuous web of material extending between the first end 209 and the second end 211 may be used Single conveyor.

[0040] In one configuration, the conveyor in the substrate automation system 515 includes a support roller 512 (FIGS. 5A to 5C) that supports and drives a support material configured to support the substrate. In one example, the support material includes a continuous web 513 of material (eg, stainless steel mesh, high temperature polymeric material) that can withstand the processing environment gas and temperature achieved by the substrate during processing. When the independent conveyors 220, 221 and 222 are used, the rollers 512 can be mechanically driven by a common drive system (not shown) to make the rollers 512 move in unison. The system controller 110 provides various driving signals for the roller 512, the transfer port 418, and other system actuators. Although there are seven deposition and processing chambers in the embodiment illustrated in FIGS. 1 to 2B, this configuration is not intended because any number of chambers can be provided depending on the number of processes and the equipment required for each process. This limits the scope of the present invention. Some examples of other possible processing system configurations are shown in Figures 7A to 7C.

[0041] In one embodiment, the substrate automation system 515 is configured to quickly move one or more rows of substrates 200 through the processing area 210 of the processing system 100. In one example, as illustrated in FIG. 2A, the substrate automation system 515 is adapted to sequentially transfer multiple rows of substrates 200 from the first end 209 through the processing area 210 to the second end 211. It should be noted, however, that although five columns (ie, column Ri to column RJ substrates are illustrated in FIG. 2A, fewer or more columns of substrates can be processed sequentially without departing from the scope of the invention described herein.) In one example, as shown in FIG. 2B, the substrate automation system 515 is adapted to transfer two rows of substrates 200 (ie, row R] to row R₂) Continuously transfer from the first end 209 to the second end 211. In another example, as illustrated in FIG. 7A, the substrate automation system 515 is adapted to sequentially transfer a single row of substrates 200 (ie, row RJ passes through the processing area 210 from the first end 209 to the second end 21L ·

[0042] It has been found that in order to achieve the desired output of substrates to meet current solar cell processing cost targets (such as processing >3000 substrates per hour) and to minimize the cost, the number of substrate rows to be processed in sequence needs to be limited to Between about one substrate row and three substrate rows. Thus, in one example, as shown in FIG. 2B, the substrate automation system 515 is adapted to transfer the two substrate rows R1 and R2 through the processing area 210 present in the processing system 100. It is believed that a single row or even two or three rows of processing substrates are better than the arrangement of transferring three or more continuous rows of substrates (for example, more than 5 rows). This confidence stems from the aspects discussed below: the high-speed relative speed of the supporting robot required for the supporting robot (for example, the actuator assembly 122) to work together reliably to achieve high system output of the fragile solar cell substrate; During the processing, the processing environment in the processing area 210 (for example, the deposition chamber) is effectively maintained under a moderate vacuum (for example, 1-100mTorr); the chamber components (for example, the wall) required for multiple columns are processed at a time. 202 and port 517)

Structural integrity; and material cost issues arising from the size adjustment of chamber components (for example, wall 202, vacuum pump 542, port 517, valves) in order to process multiple rows of substrates at various high processing temperatures and vacuum pressures Among them, the various high processing temperatures and vacuum pressures are required to form various layers on the solar cell substrate. It should be noted that as the width of the opening required to receive the substrate row (for example, the size of the substrate transfer port 418 in the Y-axis direction in FIGS. 2A to 2B and FIG. 4) increases, the processing environment is maintained at a moderate degree of vacuum The ability to achieve more difficult to achieve, this is because as the cross-sectional area of the opening (for example, hole size) increases, the pumping capacity required to achieve a moderate vacuum pressure in the processing area of one or more processing chambers Non-linear increase. As shown in Figure 2A to Figure 2B, the width of the processing area of the deposition and processing chamber can be reduced by appropriately selecting the number of substrate rows that are sequentially transported through the system, and thus the volume of the processing area can be reduced. , In order to improve substrate output, reduce system cost, improve the structural integrity of deposition and processing chambers, and improve device yield (for example, reduce robot transfer errors, reduce automation-induced pollution). In one example, the required width of the processing system with five columns is greater than the required width% of the processing system with two columns. Since the chamber volume and wall surface area that can be degassed when the chamber is evacuated to vacuum pressure are small and must be cooled for maintenance or heating Since the amount of material to be operated is smaller, the reduction in the width of the processing system also improves the maintainability of the system, reduces the repair time for repairing system problems, and reduces the system startup time after performing repairs on one of the chambers.

2A to 2B, in one configuration, the substrate unloading chamber 195 includes one or more substrates configured to transfer the processed substrate (eg, substrate 200) from the substrate automation system 515 to the substrate transfer interface 126 Multiple automation devices (such as the actuator assembly 122 discussed above). The substrate transfer interface 126 will generally transfer the substrate to a downstream location (for example, a downstream processing module in a solar cell manufacturing line). In operation, the actuator assembly 122 will generally remove the processed substrate 200 from the second end 211 and transfer the processed substrate 200 out of the processing system 100. In one embodiment, via one or more modules The substrate conveyor 127 transfers the substrate 200 from the substrate transfer interface 126 position, and the one or more modular substrate conveyors 127 are configured to transfer the received wafer or stacking box containing a plurality of substrates to the solar cell manufacturing plant Other parts.

[0044] In one embodiment, the chambers 130-190 provided in the processing system 100 are selectively isolated from each other by using the slit valve assembly 417 discussed below. Each slit valve assembly 417 is configured to selectively isolate the processing area in one of the chambers 130-190 from the substrate automation system 515, and each slit valve assembly 417 is adjacent to the chambers 130-190 and the substrate The interface between the automation system 515 is set. In one embodiment, the substrate automation system 515 is maintained in a vacuum environment to eliminate or minimize the pressure difference between the transfer chamber 110 and the independent chambers 130-190, which are generally used in vacuum Under the condition of processing the substrate. However, in an alternative embodiment, the transfer area 210 and the separate chambers 130-190 can be used to process the substrate in a clean and inert atmospheric pressure environment.

[0045] Generally speaking, the processing system 100 includes a system controller 110 configured to control the automation aspect of the system. The system controller 110 facilitates the control and automation of the entire substrate processing system 100, and the system controller 110 may include a central processing unit. Unit (central processing unit; CPU) (not shown), memory (not shown), and support circuit (or 1/0) (not shown). The CPU can be any form of computer processor that is used in an industrial environment to control various chamber processes and hardware (for example, conveyors, motors, liquid delivery hardware, etc.) and monitor systems and chambers Process (for example, substrate position, process time, detector signal, etc.). The memory is connected to the CPU, and the memory can be easily available memory (such as random access memory (random access memory; RAM), read only memory (ROM), floppy disk, hard disk, or any other form of local or Remote digital storage device). Software instructions and data can be encoded and stored in the memory to command the CPU. The support circuit is also connected to the CPU for supporting the processor in a conventional manner. Support circuits can include flash memory, power supplies, clock circuits, input/output circuit systems,

Subsystems and the like. The program (or computer instruction) readable by the system controller 110 determines which tasks can be performed on the substrate. Preferably, the program is software that can be read by the system controller 110, and the software includes codes for generating and storing at least the substrate position information, the action sequence of each controlled component, and any combination of the above.

[0046] FIGS. 1 and 2A to 2B are schematic diagrams of an embodiment of a substrate processing system 100 including a plurality of processing chambers (for example, reference numerals 140, 160, and 180). Although, as discussed above, the types of processing techniques performed in the processing chambers 140, 160, and 180 provided in the processing system 100 may include PVD, PECVD, LPCVD, etc., it is believed to be similar to those shown in FIGS. 5A to 5D. The PECVD deposition chamber of one of the configurations in the configuration facilitates the formation of high-quality layers on both surfaces of the solar cell substrate 200.

[0047] FIG. 2C is a side cross-sectional view of a portion of the substrate processing system 100 illustrated in FIG. 2B. It should be noted that for clarity, the processing chamber 170 illustrated in FIG. 2B has been removed from the side cross-sectional view illustrated in FIG. 2C, however, in some configurations, the processing chamber 170 may be positioned in the processing chamber Between the chamber 160 and the processing chamber 180 to control the temperature of the substrate entering the processing chamber 180. In one configuration of the processing system 100, as illustrated in FIG. 2C, multiple processing chambers are arranged so that the independent conveyors 220, 221, and 222 in the substrate automation system 515 are adapted to transfer substrates through the processing system 100. Each of the different parts of the processing area 210. The processing area 210 may include processing areas 131, 141, 151, 161, 171, 181, and 191 (FIG. 2A to FIG. 2B). The processing areas 131, 141, 151, 161, 171, 181, and 191 exist in optional In isolated processing chambers 130-190. The parts of the processing area 210 may be intermittently isolated from each other by using one or more slit valve assemblies 417 provided at the inlet and/or outlet of each of the processing chambers 130-190. Although the slit valve assembly 417 is discussed in conjunction with the processing chamber 400 schematically illustrated in FIG. 4, this configuration is not intended It is intended to limit the number and/or positions of slit valve components that can be used in the processing system 100. In one embodiment of the processing system 100, each of the slit valve assemblies 417 is closable and mounted on one of the processing chamber walls. The slit valve assembly 417, which can be used in combination with any of the processing chambers discussed herein, can contain a closable door 417B, which is connected to the door 417B by using an elastomer strap 402A provided on the top of the wall 402. A part of the wall 402 forms a seal to seal the substrate transfer port 418. Based on the command received from the support circuit 162 of the system controller 110, the actuator 417A extends and retracts the door 417B. When the door 417B is in the closed position, the processing chamber is sealed to isolate the areas on both sides of the door 417B from each other. In one embodiment, the gate 417B is a conventional gate valve configured to prevent gas leakage through the substrate transfer port 418. During processing, the door 417B can be closed so that one or more substrate processing steps can be performed in the portion of the processing area 210 provided between the processing chamber walls 402. After performing the process related to each chamber, the door 417B of each chamber is opened. Based on the command received by the driving mechanism from the support circuit 162 of the system controller 110, the conveyors 220, 221, and 222 advance the substrate 200 in the direction "M" into the subsequent processing chamber. However, in some configurations, The substrate transfer port 418 remains at least partially open during substrate processing, and therefore only hinders the movement of the substrate when performing maintenance activities on the processing system (ie, the transfer port is "closed").

[0048] The design of the board processing chamber

[0049] FIG. 4 is a side cross-sectional view of one embodiment of a processing chamber 400, which may form a processing chamber provided in the processing system 100, such as processing chambers 130-190 (FIGS. 1 to Figure 2B)) one or more of them. 4 is a side cross-sectional view of the processing chamber 400, which is aligned with or parallel to the X-axis direction of the processing system 100 with respect to the transfer direction. In one embodiment, the processing chamber 400 includes one or more energy sources (such as a source 410), a chamber wall 402 that at least partially encloses a processing area 210 or a portion of the processing area 406, and a substrate automation system 515 At least part of it. The wall 402 generally contains a material that can structurally support the load applied by the external environment 543 outside the processing area 406 when the wall 402 is heated to a desired temperature and pumped to a vacuum pressure by the vacuum pump 542. similar

The wall 402 of the wall 202 illustrated in FIG. 2A generally includes a material such as aluminum material or stainless steel.

[0050] In one configuration, each of the sources 410 includes a reflector 412 and a radiation source (such as an IR lamp, a crane lamp, an arc lamp, a microwave heater, or other radiation energy source) that is configured to When the substrate 200 installed in the processing area 406 of the processing chamber 400 is transferred by the substrate automation system 515, the energy "E" is transferred to the surface of the substrate 200. During processing, the processing chamber 400 can be used to deliver a desired amount of energy to the substrate 200 before receiving the substrate by the subsequent processing chamber (such as the deposition chamber 140.160 or 180), so that the substrate enters the processing area of the subsequent processing chamber. When the desired processing temperature is reached.

[0051] FIGS. 5A to 5C are side cross-sectional views of an embodiment of a processing chamber 500 that may be positioned in a processing chamber provided in the processing system 100 (such as processing chambers 140, 160). And 180 (FIGS. 1 to 2B)) or replace one or more of the processing chambers. 5A is a side cross-sectional view of the processing chamber 500, which is aligned with or parallel to the X-axis direction of the processing system 100 with respect to the transfer direction. 5B is a side cross-sectional view of the processing chamber 500, which is aligned with the direction perpendicular to the transfer direction or parallel to the Y-axis direction. In one embodiment, the processing chamber 500 includes one or more deposition sources (such as the deposition sources 560A-560D illustrated in FIG. 5A), gas sources 528 and 529, a power source 530, and at least partially enclosed processing The chamber wall 502 of a portion of the area 210 (eg, the processing area 506), and at least a portion of the substrate automation system 515. 5C is an enlarged side cross-sectional view of two deposition sources 560A and 560B, which are intended to form a layer on the surface of the substrate 200 as the substrate 200 passes under the deposition source. The wall 502 generally contains a material that can structurally support the load applied by the environment 543 outside the processing area 506 when the wall 502 is heated to a desired temperature and pumped to a vacuum pressure by the vacuum pump 542 material. The wall 502, which is similar to the wall 202 illustrated in FIG. 2A, generally contains a material such as aluminum material or stainless steel.

[0052] In one configuration, part of the substrate automation system 515 includes an intermediate conveyor 221, which

221 is adapted to support, guide, and move the substrate 200 through the processing chamber by using one or more actuators (not shown) (eg, stepper motors or servo motors). In one configuration, the intermediate conveyor 221 includes two or more rollers 512 and a conveyor belt 513 configured to support and move the substrate row 200 in the positive +X axis direction during processing. [0053] In the processing chamber In one embodiment of the chamber 500, each of the deposition sources 560A-560D is coupled to at least one gas source (such as gas sources 528 and 529) that is configured to combine one or more processing gases It is conveyed to the processing area 525 formed together with the processing area 506, and the processing area 525 is under each of the deposition sources and above the surface of the substrate 200 disposed under the processing area 525. As illustrated in FIG. 5B, the deposition sources 560A-560D are generally configured to extend above the substrate 200 provided on the substrate automation system 515.

[0054] As shown in FIG. 5C, the deposition source will generally include at least one gas delivery element (such as a first gas delivery element 581 and a second gas delivery element 582), each of the at least one gas delivery element It is configured to direct the processing gas to the processing area 525. The first gas delivery element 581 includes a fluid gas chamber 561 configured to receive processing gas from a gas source 528 and deliver the received gas to the fluid gas chamber 561 through a plurality of holes 563 formed in the fluid gas chamber 561 The processing area 525. Similarly, the second gas delivery element 582 includes a fluid plenum 562 configured to receive processing gas from a gas source 529 and to receive the processing gas through a plurality of holes 564 formed in the fluid plenum 562 The gas is delivered to the processing area 525. The gas sources 528 and 529 are generally configured to provide one or more precursor gases and/or carrier gases for use on the surface of the substrate 200 by using a PECVD process Upper deposition layer. In a process sequence, at least one of the gas sources 528 and 529 is configured to deliver silicon-containing gas (such as silane (SiHj), nitrogen-containing gas (such as nitrogen (%)) or ammonia (NHJ) to the deposition source to A silicon nitride layer is formed on the surface of the substrate. In a process sequence, at least one of the gas sources 528 and 529 is configured

It is configured to deliver an aluminum-containing gas (such as trimethyl aluminum (TMA)) and an oxygen-containing gas (such as oxygen (0J) to the deposition source to form an aluminum oxide layer (Al_x0_y）。

[0055] In one configuration, as illustrated in FIG. 5C, the power supply 530 is configured to deliver radio frequency energy to the processing area by using a radio frequency power supply 530C, an optional matching 530A (for example, a matching network), and an electrical connection 530B 525 forms plasma "P" in the processing area 525 to enhance the deposition process performed on the substrate 200. In one embodiment, an electrical bias is applied to the electrode 580 disposed in the processing area 506 to help improve the properties of the deposited film. In one configuration, a bias voltage is applied to the electrode 580 by using a power supply 587 (FIG. 5A). The power supply 587 may include an active electric bias source (for example, an AC power supply or a DC power supply) or selectively make the electrode 580 partly grounded switch. In one embodiment, the electrode 580 may include a heating element 584 (such as a resistive heating element 584) that can be powered by an independent heater power supply (not shown). The electrode 580 is positioned adjacent to the substrate 200 to heat the substrate 200 to a temperature of about 200°C to about 550°C during processing. The electrode 580 and/or the heating element 584 can be made of conductive material to function as a ground electrode or a radio frequency (RF) electrode to act as an electrode in a capacitively coupled plasma.

[0056] In another processing chamber configuration, as illustrated in FIG. 5D, the deposition sources 560A-560D illustrated in FIG. The precursor gas is transported in two different directions (such as two different directions F] and F? relative to the moving direction of the substrate + X-axis direction. 5D is a side cross-sectional view of the processing chamber 100 aligned with or parallel to the X-axis direction with respect to the transfer direction. The fluid distribution source 565 further includes a dual gas injection manifold 566 having two separate flow passages 574 and 575 formed in the dual gas injection manifold 566. The flow channel 574 is coupled to the first gas source 528 and the flow channel 575 is coupled to the second gas source 529. The first gas source 528 and the second gas source 529 are generally configured to deliver one or more precursor gases or carrier gases to the gas injection dual manifold 566. Each of the first gas source 528 and the second gas source 529 can be adapted to deliver a process gas containing a gas selected from the group consisting of: silicon-containing gas (eg, silane (SiH»), ammonia (alumina) ), aluminum-containing gas (for example, trimethyl aluminum (TMA)), oxygen ), nitrogen (%), hydrogen (out), and the above composition or the above derivatives.

[0057] The first gas source 528 and the first gas source 529 are coupled to a flow controller (not shown). The flow controller may include a series of controlled valves or mass flow controllers configured to control the flow rate of the precursor gas from the first gas source 528 and the second gas source 529 to the gas injection manifold 566. Each of the flow channels 574.575 may include a plurality of discrete holes formed through a portion of the fluid distribution source 565 to direct the flowing gas in the desired direction A or F₂The upper air chambers 568 and 569 are respectively guided into the processing area 525. In one embodiment, each of the fluid distribution sources 565 may contain a plurality of separately isolated air chambers (such as air chambers 568, 569 distributed in the Y-axis direction), and each of the fluid distribution sources 565 Is adjusted to flow in direction A and/or direction F₂One or more processing gases are separately delivered from the flow channels of the fluid distribution sources 565. The flow rate of the gas delivered from the first gas source 528 and the second gas source 529 can be individually controlled to provide a desired gas composition to be delivered from the flow channel 574 or the flow channel 575.

[0058] In one configuration, each of the fluid distribution sources 565 is configured to deliver an asymmetric fluid distribution and/or gas composition to the space within the processing area 525 to provide a gap between the substrate 200 and the fluid distribution source 565. When each one moves, uneven deposition occurs on the substrate 200. Due to the configuration of the runners 574 and 575 and/or the configuration of the power supply 530, the processing area 525 can be effectively divided into two or more areas, thus allowing the process variables in each area to be changed and controlled independently. In one configuration of the processing chamber 100, the fluid distribution source 565 is configured to divide the processing area 525 into the first plasma space 578 and the first plasma space 578 by using the radio frequency energy delivered by the radio frequency power supply 530C, the optional matching 530A, and the electrical connection 530B. The second plasma space 579. In one example, the portion of the processing area 506 may be divided into two sections separated by an imaginary vertical plane 571 (eg, parallel to the Y-Z plane in FIG. 5D). In one embodiment,

An electrical bias is applied to the electrode 580 disposed in the processing area 506 to help improve the properties of the deposited film. In one configuration, the electrode 580 may have independent electrode elements 585A, 585B configured to individually change the plasma formed in the first plasma space 578 or the second plasma space 579.

[0059] According to the properties of the plasma generated by the fluid distribution source 565, the first plasma space 578 is different from the second plasma space 579. For example, compared with the second plasma space 579, the first plasma space 578 may have a lower plasma density (that is, the number of ions per unit area) and a lower flux (that is, per unit area). /Time ion density) or a combination of the above. Alternatively, compared with the first plasma space 578, the second plasma space 579 may have a lower plasma density and/or a lower flux. Due to the configuration of the fluid distribution source 565 and the division of the processing area 525 into the first plasma space 578 and the second plasma space 579, the user can change the deposition process parameters. In one embodiment, this promotes a film with a graded composition. Formation on the substrate 200.

[0060] In one embodiment, the pressure in the processing area 525 may be adjusted by the vacuum pump 542 (FIG. 5A) to provide a desired gas flow pattern in the processing area 525 to enhance the quality or properties of the deposited film. In one example, a low pressure (e.g., less than about 500 mTorr) is generated in the processing region 525 to provide laminar reactants (e.g., precursor gas) and also prevent the first plasma space 578 and the first plasma space 578 across the imaginary vertical plane 571 The amount of reactants mixed between the two plasma spaces 579. In addition, the flow channels 574 and 575 may be positioned to guide the airflows toward different areas of the substrate 200 as the airflows pass through the processing area 506. In one embodiment, the flow channels 574 and 575 include multiple angles 572 and 573 (for example, in the -X axis direction or the +X direction) formed at angles 572 and 573 (for example, in the -X axis direction or the +X direction) of about 30 degrees to about 45 degrees with respect to the imaginary vertical plane 571, respectively. Openings.

[0061] Therefore, the fluid distribution source 565 can be used to form a graded film, which can be composed of a single film layer having regions with different chemical compositions and/or crystal structures. In one embodiment, the graded film may have regions with different chemical compositions and/or crystal structures in a direction parallel to the thickness of the deposited film (for example, parallel to the Z-axis direction in FIG. 5A). The grading film may be composed of layers that are sequentially deposited as the substrate 200 moves relative to one or more fluid distribution sources 565 in the X-axis direction. Due to the orientation of the flow channels 574, 575 and the speed of the substrate 200 as the substrate 200 moves relative to the fluid distribution source 565, the deposition of each layer or part of the layer is temporarily separated. In one embodiment, the second flow rate of the precursor gas from the second gas source 529 is greater than the first flow rate of the precursor gas from the first gas source 528. Therefore, the first precursor gas flows to the processing area 525 at a higher rate than the second precursor gas, which provides higher plasma in the second plasma space 579 compared to the first plasma space 578 Bulk density and/or higher flux, and can form membranes with different compositions. The graded film can be formed from the same precursor or different precursors. In one embodiment, the graded film may be one or more hydrogenated silicon nitride (Si_xN_Y: H) Layer. In another embodiment, the graded film may be alumina (A1) with different stoichiometry (such as different ratios of aluminum to oxygen)._χ0_γ) Ο Although the material layer formed on the substrate 200 will experience a slight temporal separation, a single continuous film may be formed on the surface of the substrate 200. In one example, the first flow rate of the precursor gas from the first gas source 528 and the second flow rate of the precursor gas from the second gas source 529 are.

[0062] The first plasma space (for example, the plasma space 578 under the first deposition source 560A), the second plasma space (for example, the plasma space 579 under the first deposition source 560A), and the The formation of the three plasma spaces (for example, the plasma space 578 under the second deposition source 560B) and the fourth plasma space (for example, the plasma space 579 under the second deposition source 560B) utilizes the formation of the deposition sources 560A and 560B. Combine to form a graded film on the substrate 200. Each of the first plasma space, the second plasma space, the third plasma space, or the fourth plasma space may contain different plasma densities and/or different fluxes to promote the deposition on the substrate 200

The first and second layers are deposited at different deposition rates. In one embodiment, one or both of the deposition source 560A and the deposition source 560B may be coupled to an actuator that is at least vertically movable. An actuator can be used to adjust the spacing between the substrate and the corresponding fluid distribution source 565. This allows for additional process control by changing the distance between the corresponding gas injection dual manifold and the substrate 200.

[0063] It is believed that the properties of the deposited layer can be greatly improved by using at least two deposition sources 560A, 560B, 560C, and 560D to process or deposit layers on the substrate in a sequential manner compared with conventional processing techniques. The ability to separately control the processing conditions and gas concentration in different areas of the processing chamber when the substrate is being rapidly transferred through the processing area 210 allows for easy control of the material deposited on the surface of the substrate at different times. Therefore, by using two or more deposition sources, different compositions, hierarchical compositions, and/or different physical structures (eg, mass density, crystal structure) can be produced during the deposition sequence performed in the processing system. membrane. In one example, a first mixture of a plurality of processing gases and plasma power is first used to deposit a high-quality passivation layer (such as the first layer provided on the substrate surface 305 of the substrate 310) on the substrate surface at the first deposition rate. 321 (FIG. 3)), and then use a second mixture of multiple processing gases and plasma power to deposit a lower-quality passivation layer (such as shown in FIG. 3) on the surface of the high-quality passivation layer at a second deposition rate The second layer 322 is shown), the second deposition rate is higher than the first deposition rate.

[0064] FIG. 6 is a side cross-sectional view of an embodiment of a processing chamber 600 that can be positioned in processing chambers (such as processing chambers 140, 160, and 180) provided in the processing system 100 (FIG. 1 To one or more of Figure 2B)) or replace one or more of the processing chambers. 6 is a side cross-sectional view of the processing chamber 600, which is aligned with or parallel to the X-axis direction of the processing system 100 with respect to the transfer direction. In one embodiment, the processing chamber 600 includes one or more energy sources (such as sources 612 and 614), a chamber wall 602 that at least partially encloses the processing area 210 or a portion of the processing area 606, and a substrate automation system At least part of 515. The wall 602 is generally composed of a material that can structurally support the load applied by the external environment 643 outside the processing area 606 when the wall 602 is heated to a desired temperature and pumped to a vacuum pressure by the vacuum pump 642. The wall 602 similar to the wall 202 illustrated in FIG. 2A may be constructed of a material such as aluminum material or stainless steel.

[0065] In the configuration illustrated in FIG. 6, the sources 612, 614 are "Hall effect" plasma sources. In this type of source, the first source 612 is surrounded by the second source 614. A nozzle 616 for introducing processing gas into the processing area 606 is shown. A gas source 628 is provided to transport the processing gas through the nozzle 616. Each source 612, 614 includes a housing 608 enclosing electrodes 610A.610B. Each electrode 610A.610B has a cooling channel 613 formed in each electrode 610A.610B. The electrodes 610A, 610B are coupled to the common power supply 634, and the electrodes 610A, 610Bo are driven in reverse phase during operation. In one embodiment, the power supply 634 is an AC power supply.

[0066] Gas is also introduced from the gas source 626 to the sources 612, 614 via a gas manifold 628 formed in the plate 620. The plate 620 is cooled by the cooling liquid flowing through the cooling channel 622. The plate 620 is coupled to the housing 608 by a well-known fastening mechanism (not shown, such as screws). The plate 620 has an opening through which a nozzle 622 is formed.

[0067] Each source 612, 614 has a cavity portion 621 defined by a gasket 623 covering the electrodes 610A. 610B. The electrodes 610A and 610B are shaped to form a cavity portion. The liner 623 promotes heat transfer in the sources 612,614. Magnets 624A and 624B are provided adjacent to the end of the cavity portion 621 and adjacent to the plate 620. The magnets 624A, 624B may include permanent magnets or magnetrons. The magnets 624A and 624B have opposite polarities. In addition, magnet shunts 636A>636B exist in the cavity portion 621 and are coupled to the electrodes 610A and 610B. The magnetic shunt 636A.636B has the opposite polarity to the corresponding magnet 624A.624B. In general, the magnet 624A.624B and the shunt 636A.636B form a magnetic field that affects the deposition.

[0068] The two electrodes 610A and 610B are connected on opposite sides of the AC power source 634. Will react via the gas manifold 628

The inert gas and/or inert gas are introduced into the cavity portion 621. At the same time, the second gas is introduced through the nozzle 616. Each of the electrodes 610A and 610B alternately serves as a cathode and an anode during the treatment. When one electrode 610A, 610B is the cathode, the other electrode 610A.610B is the anode of the circuit. The two sources 610A. 610B alternately acting as anodes and cathodes prevent material from accumulating on the liner 623 because any accumulation is continuously removed.

[0069] The source 612.614 generates an ion beam for depositing material onto the substrate 200. Although operating as an anode, all electrons from source 612 must flow to source 614 to return to power source 624. In order to reach the internal electrodes 610A.610B, electrons must enter the cavity portion 621 via the nozzle 632. When the electrons move toward the nozzle 632, the electrons are blocked by the positively charged electric field emitted through the nozzle 632. The positively charged electric field is generated by the strong magnetic field in the nozzle 632, and the nozzle 632 extends to a weaker field region closer to the substrate 200. Because the electron current on the positively charged electric field is blocked, a voltage drop occurs.

[0070] Since electrons are blocked from flowing into the cavity portion 621, gas atoms flow out of the cavity portion 621 through the nozzle 632. These neutral atoms collide with the electrons to form ions. The accelerated ions then leave the sources 612, 614 toward the substrate 200. This overall effect is similar to the "End Hall" effect used by the ion source in the case of axial electron mirror limitation. In operation, a dense linear ion beam flows out of the sources 612, 613 toward the substrate 200 in every half cycle. At the same time, the electrons flowing out of the cathode sources 612 and 614 neutralize the generated ion beam. The result is an ideally neutralized, uniform, dense beam directed to the substrate 200. [0071] As illustrated in FIG. 6, the first source 612 is surrounded by the second source 614. Therefore, when the first source 612 operates as a cathode, the anode surrounds the cathode. Conversely, when the second source 614 operates as a cathode, the anode is surrounded by the cathode. The rapid cycling between the cathode and the anode allows the continuous transfer of electrons between adjacent sources 612.614.

[0072] In operation, the two sources 612.614 operate together to deposit a uniform film on each of the substrates 200. The processing gas from the gas source 628 is introduced through the nozzle 616. At the same time, the reactive gas and/or inert gas from the gas source 626 is introduced through the manifold 618 in the top plate 620. With the introduction of gas through the manifold 618 and nozzle 616, The power from the power source 624 is applied to the electrodes 610A, 610B. The electrodes 610A and 610B are driven in reverse so that one of the electrodes 610A and 610B operates as an anode, and the other of the electrodes 610A and 610B operates as a cathode. The electrical bias to the electrodes 610A. 610B causes the source 612.614 operating as a cathode to generate electrons, which are collected near the nozzle 616 of the source 612, 614 operating as a cathode, and near the nozzle 616 of the source 612, 614 operating as an anode Gather. Due to the magnetic field generated by the magnet 624A.624B and the shunt 626A.626B, electrons cannot penetrate into the cavity portion 621 of the anode source 612,614. At the same time, the gas atoms introduced from the manifold 618 flow out of the nozzle 632. Gas atoms collide with electrons and produce ions. The ions are then accelerated toward the substrate 200 due to the potential difference between the electric field generated by the electrons collected near the nozzle 632 and the bias voltage applied to the electrodes 610A.610B. The ions generate a plasma plume, which allows uniform deposition on all substrates 200.

[0073] In a process sequence, at least one of the sources 612 and 614 is configured to combine a silicon-containing gas such as silane (SiHj), a nitrogen-containing gas such as nitrogen (N₂) Or ammonia (NHJ) is delivered to the deposition source to form a silicon nitride layer on the front surface of the substrate 200 (for example, the front surface 305).

[0074] As further illustrated in FIG. 6, a part of the substrate automation system 515 includes an intermediate conveyor 221 adapted to use one or more actuators (not shown) ( For example, a stepping motor or a servo motor) supports, guides, and moves the substrate 200 through the processing chamber 600. In one configuration, the intermediate conveyor 221 includes a support roller 512 and a material web 513 configured to support and move the substrate row 200 in the positive +X axis direction during processing.

[0075] In one embodiment, the pressure in the processing area 606 is adjusted by the vacuum pump 642 to be in the processing area 606

Provide the desired gas flow pattern to enhance the quality or properties of the deposited film. In one example, a low pressure (eg, less than about 500 mTorr) is generated in the processing region 606 to provide a laminar flow reactant (eg, precursor gas).

[0076] Reorientation of palatal chamber with plate

[0077] Referring to FIGS. 7A to 7B, in one embodiment, the processing system 100 may further include a processing chamber 700 (such as a processing chamber 150) for The substrate 200 disposed in the vacuum environment within the processing area 210 or a part of the processing area 701 is redirected or turned over. In some embodiments, a portion of the linear array substrate 200 that has been processed on one side can then be transferred to the processing chamber 150 for redirecting the substrate 200 so that the opposite side can be processed in a downstream processing chamber. For example, if the upward side of each substrate is processed first, the processing chamber 150 redirects each of the substrates 200 so that the previously upward side is downward and the previously downward side upward for subsequent processing. After the substrate 200 is redirected, the substrate 200 may then be transferred to a subsequent processing chamber (such as processing chambers 160-190) for processing the opposite side of the substrate 200. In one embodiment, the substrate 200 is transferred to a processing chamber 160 (such as a PECVD chamber), and a deposition process is performed on the substrate 200. Therefore, the steps of processing the first side of the substrate 200, then turning the substrate 200 and processing the opposite side of the substrate 200 can be all implemented in the processing system 100 without breaking the vacuum in the system.

[0078] FIG. 7A is an isometric view of a portion of a processing chamber 700 containing a substrate redirection device 705. The substrate redirection device 705 may include a rotary actuator 720 all coupled to the system controller 110, conveyor components 710A and 710B connected in series, and a support 780. In one configuration of the substrate inverter system 705, the tandem conveyor assemblies 710A and 710B are positioned coplanar with the substrate transfer direction 708 (for example, the X-axis direction in FIGS. 5A and 6). The system controller 110 using a rotary actuator (not shown) installed inside each conveyor assembly 710A and 710B activates the conveyor belt 770 to facilitate loading and distribution of substrates along the substrate transfer direction 708. If the substrate is required to be reversed, then the group of substrates (such as the row R of the substrate_rR₅And when one or more rows (X-axis direction) are positioned between the conveyor belts 770, the conveyor belt 770 is stopped so that a vacuum gradient can be applied to further fasten the substrate to at least one of the conveyor belts 770. The substrate reverser system 700 reverses the substrate by uniformly rotating the conveyors in series using a rotary actuator 720 (FIG. 7A), which is coupled to each of the conveyor assemblies 710A and 710B Supporting structural elements. The reversal operation may be performed around any rotation axis on the centerline of the group of substrates or any rotation axis adjacent to the centerline of the group of substrates. In this embodiment, the reverse rotation "R" (FIG. 7B) occurs around the substrate centerline "Y" (FIG. 7B ), and the substrate centerline "Y" is 90 degrees to the substrate transfer direction 708. Reversing the substrate about any axis that coincides with the centerline of the substrate causes the reverse front edge of the substrate relative to the substrate transfer direction 708 to become the reverse rear edge. In an automated substrate production system, the control of the substrate edge orientation relative to the substrate transfer direction 708 may be desired for processing. In addition, this method allows the substrates conveyed in the substrate transfer direction 708 to be loaded, reversed, and unloaded from both sides of the conveyor assembly 710A and 710B in series, thus eliminating the need to reset the reverser to collect another group of substrates. The time required.

[0079] FIG. 7B illustrates a schematic cross-sectional view of one embodiment of conveyor assemblies 710A and 710B disposed in the processing chamber 150. In one embodiment, the conveyor belt 770 is disposed above the rollers 711 and 712 included in the conveyor assembly 710A, and the second conveyor belt 770 is disposed above the rollers 713 and 714 included in the conveyor assembly 710B. In one embodiment, the first rotary actuator (for example, an electric motor) controlled by the system controller 110 is coupled to one of the rollers in the conveyor assembly 710A, and the first rotary actuator is also controlled by the system controller 110 Two rotary actuators (eg, electric motors) are coupled to the rollers in the conveyor assembly 710B. In one embodiment, the conveyor belt 770 in each of the conveyor assemblies 710A and 710B is operated independently via the use of commands sent by the system controller 110 to each of the rotary actuators. In one embodiment, the elastic properties of the conveyor belt 770 combined with the spacing between the two conveyor components 710A and 710B (ie, the gap formed between the conveyor components 710A and 710B) are used to adjust the thickness of the substrate and the warpage of the substrate. and

Changes in the flatness of the conveyor.

[0080] In addition, each of the conveyor belts 770 may be porous to allow fluid to be transferred from one side of the conveyor belt 770 to the other side. In one embodiment, the conveyor belt 770 is formed of a flexible and porous material (such as polyurethane foam or metal wire mesh or other similar materials). In one embodiment, the system controller 110 can be used to selectively control the transport The air flow between the gas source 791 and the gas chamber 790 in each of the engine components 710A and 710B. In one example, due to the application of a vacuum applied to the opposing surface in fluid communication with the fluid source 791, sub-atmospheric pressure (eg, vacuum) may be generated on one surface of the conveyor belt 770. In one aspect, by providing vacuum pressure in the port 794 formed in each of the conveyor assemblies 710A and 710B, the substrate is captured and held on the porous conveyor belt 770 disposed above the support surface 792. In one configuration, the fluid source 791 is a vacuum pump or vacuum evacuator adapted to provide vacuum to the surface of the conveyor belt 770 from one or more ports 794 formed in the air chamber 790. In configurations where the pressure in the processing area 210 is too low to create the desired "clamping force" by applying vacuum to one side of the conveyor belt 770, the actuator can be used to reposition at least one of the conveyor assemblies 710A and 710B. Which are formed in these conveying units in a closed form The gap between the pieces 710A and 710B is such that the substrate 200 disposed in the gap is restricted from moving during the reorientation process. [0081] In some embodiments of the processing system 100, the processing chamber 700 may further include one or more energy sources (such as energy sources 704). The energy source 704 may include similar elements as discussed above along with the source 410, and thus each of the energy sources 704 may include a reflector 412 and a radiation source 411, the reflector 412 and the radiation source 411 configured to be redirected by the substrate The device 705 redirects the substrates 200 disposed in the processing area 701 of the processing chamber 700 and transfers the energy "E" to the substrates 200 when the substrates 200 are transferred by the components existing in the substrate automation system 515. In one configuration, the energy source 704 is configured to deliver energy to the substrate received by the substrate redirection device 705 and/or provided in the substrate redirection device 705. The energy source 704 and the system controller 110 are generally used to maintain and/or control the temperature of the redirected substrates to ensure that the redirected substrates are transferred from the processing chamber 700 and/or received by the downstream processing chamber. The redirecting substrates are at the desired temperature.

[0082] Dynamic Loading Locking the Eye Room

[0083] FIG. 8A is a schematic plan view of a dynamic load lock chamber 800 according to an embodiment of the present invention. 8B is a schematic cross-sectional view of the dynamic load lock chamber 800 taken along the section line B-B in FIG. 8B. As illustrated in FIGS. 8A and 8B, the dynamic load lock chamber 800 may correspond to the first dynamic load lock when configured to transfer the substrate 201 in the forward direction "F" (for example, from atmospheric pressure to vacuum) The chamber 120, and the dynamic load lock chamber 800 may correspond to the second dynamic load lock chamber 192 when configured to transfer the substrate 201 in the opposite direction "R" (eg, from vacuum to atmospheric pressure).

[0084] Regardless of the direction in which the substrate 201 is transferred, the function of the dynamic load lock chamber 800 is to continuously transfer the substrate 201 to the processing chamber 130 or continuously transfer the substrate 201 from the processing chamber 190, while eliminating the movement from the dynamic load lock chamber. The air flow from the atmospheric pressure side of 800 to the vacuum condition inside the processing chamber 130.190. In order to achieve this desired function, the internal volume of the dynamic load lock chamber 800 is configured into a plurality of discrete volumes when between the atmospheric side of the dynamic load lock chamber 800 and the vacuum condition inside the one or more processing chambers 130.190 When the substrates arranged in the discrete volumes are transferred, the discrete volumes are movable along the linear path between the atmospheric side and the vacuum condition. As described later, when the discrete volume is transferred along the substrate transfer path during the substrate transfer process, the pressure in the equal discrete volume is reduced to staged levels, respectively. The linear substrate is set to continuously move The separation mechanism on the conveyor belt provides separation between the discrete volumes that transports substrates between the atmospheric side of the dynamic load lock chamber 800 and the one or more processing chambers 130, 190.

[0085] The dynamic load lock chamber 800 includes a top wall 802, a bottom wall 804, and a side wall 806 that enclose a staged load lock region 808. The walls 802, 804, and 806 can be made of typical materials (such as stainless steel or aluminum) that can be used in the substrate processing chamber. The linear transport mechanism 810 extends from the atmospheric pressure side 812 of the dynamic load lock chamber 200 through the staged load lock region 808 to the processing pressure side 814 of the dynamic load lock chamber 200. The linear transport mechanism 810 includes one or more rollers 816 positioned on the atmospheric pressure side 812 of the dynamic load lock chamber 800 and one or more rollers positioned on the processing pressure side of the dynamic load lock chamber 800 818. One or more rollers 816, 818 support and drive a continuous conveyor belt 820 of material that is configured to support and convey the substrate 201 through the load lock chamber 800. The rollers 816, 818 can be driven by a mechanical drive 894 (FIG. 8A, such as a motor/chain drive (not shown)), and the rollers 816, 818 can be configured to transport the conveyor belt at a linear speed of up to about 10 m/min. The mechanical drive 894 may be an electric motor (eg, an AC servo motor or a DC servo motor) adjusted to provide the desired conveyor belt 820 speed during processing. The conveyor belt 820 may be made of stainless steel, aluminum, or polymer materials. One or more support plates 822 may extend between the side walls 806 to support the inner surface of the conveyor belt 820. The inner surface of the conveyor belt 820 is generally supported by the surface 822A (FIG. 8D) of one or more support plates 822.

[0086] The upper wall 802 of the load lock chamber 800 includes a plurality of pockets 826, 827, 828, 829, and 830 formed in the upper wall 802, and the plurality of pockets 826, 827, 828, 829 And 830 are fluidly coupled to a plurality of actuators 831, 832, 833, 834, and 835, respectively. Each of the pockets 826-830 is in further fluid communication with the corresponding discrete area of the staged load lock area 808. For example, the cavity 826 is in fluid communication with the area 846. The pocket 827 is in fluid communication with the area 847. The pocket 828 is in fluid communication with the area 848. The cavity 829 is in fluid communication with the area 849, and the cavity 830 is in fluid communication with the area 850.

[0087] The lower wall 804 includes a plurality of corresponding recesses 836, 837, 838, 839, and 840 formed in the lower wall 804 and coupled to a plurality of actuators 831, 832, 833, 834, and 835, respectively. Each of the pockets 836-840 is further fluidly integrated with the corresponding discrete area of the staged load lock area 808. For example, the cavity 836 is in fluid communication with the area 856. The cavity 837 is in fluid communication with the area 857. The pocket 838 is in fluid communication with the area 858. The cavity 839 is in fluid communication with the area 859, and the cavity 840 is in fluid communication with the area 860.

[0088] In addition, the one or more supporting plates 822 may also include corresponding recesses formed in the one or more supporting plates 822 and coupled to the plurality of actuators 831, 832, 833, 834, and 835, respectively 841, 842, 843, 844 and 845. Each of the pockets 841-845 is fluidly coupled to a corresponding discrete area of the staged load lock area 808. For example, the cavity 841 is in fluid communication with the corresponding areas 846 and 856. The cavity 842 is in fluid communication with the corresponding areas 847 and 857. The pocket 843 is in fluid communication with the corresponding areas 848 and 858. The cavity 844 is in fluid communication with the corresponding areas 849 and 859, and the cavity 845 is in fluid communication with the corresponding areas 850 and 860.

[0089] In one embodiment, the plurality of actuators 831-835 includes a plurality of pumps configured to gradually reduce the pressure in the dynamic load lock chamber 800 from the atmospheric pressure side 812 to the process pressure side 814 . In this embodiment, each of the pumps is configured to reduce the volume in the staged load lock area 808 corresponding to the cavity to which the pump is coupled. For example, the actuator 831 may be configured to reduce the pressure in the respective regions 846 and 856 to a first pressure (eg, 480-600 mbar) that is less than atmospheric pressure. The actuator 832 may be configured to reduce the pressure in the respective regions 847 and 857 to a second pressure (eg, 100-300 mbar) that is less than the first pressure. The actuator 833 may be configured to reduce the pressure in the respective regions 848 and 858 to a third pressure (eg, 10-100 mbar) that is less than the second pressure. The actuator 834 may be configured to reduce the pressure in the respective regions 849 and 859 to a fourth pressure (10-²-1 mbar), and the actuator 835 can be configured to reduce the pressure in the respective regions 850 and 860 to less than the fourth pressure and can be greater than one or more

The pressure in the processing chamber 130, 190 (for example, 10 "5 mbar) is a fifth pressure (10 "-10 Mana mbar). In one configuration, multiple actuators 831-835 are fluidly coupled to the cavity 826-830 and 836-845 each have a single actuator instead, where the single actuator is individually connected and valved to control the pressure in each of these pockets and/or from these pockets The air flow received by each of the cavities. In another embodiment, the actuator 831 may include a compressor configured to inject clean dry air (CDA) or an inert gas (such as nitrogen or nitrogen) into In the corresponding regions 846 and 856 of the first pressure slightly higher than atmospheric pressure (for example, 15-100 mbar higher than atmospheric pressure). This overpressure condition in the regions 846 and 856 guarantees the pollutants from the atmospheric pressure side 812 It is not introduced into the dynamic load lock chamber 800 and therefore into one or more processing chambers 130, 190.

[0090] In this embodiment, the actuators 832-835 include a plurality of pumps configured to gradually reduce the pressure from the respective areas 846 and 856 to the processing pressure side 814 of the dynamic load lock chamber 800. For example, the actuator 832 may be configured to reduce the pressure in the respective regions 847 and 857 to a second pressure (eg, 300-600 mbar) that is less than the first pressure. The actuator 833 may be configured to reduce the pressure in the respective regions 848 and 858 to a third pressure (eg, 50-200 mbar) that is less than the second pressure. The actuator 834 may be configured to reduce the pressure in the respective regions 849 and 859 to a fourth pressure (1-50 mbar) less than the third pressure, and the actuator 835 may be configured to reduce the pressure in the respective regions 850 and 860 To a fifth pressure (10 ni-1 mbar) that is less than the fourth pressure and may be greater than the pressure (for example, 10 arch mbar) in one or more processing chambers 130.190.

[0091] Although the actuators 831-835 are configured for the increased pressure drop from the atmospheric pressure side 812 of the dynamic load lock chamber 800 to the processing pressure side 814 of the dynamic load lock chamber 800, because of the stepped load lock Each of the adjacent areas within the area 808 is in fluid communication with each other, so there are still difficulties in maintaining some separation between the adjacent areas. In order to ensure this separation between adjacent areas and provide a semi-enclosed area, a plurality of separation mechanisms 852 are attached to the conveyor belt 820, wherein when the substrate 201 passes through the dynamic load lock chamber 800, the semi-enclosed area separates the substrate 201 Or the substrate 201 group is exposed to each pressure level. The separation mechanisms 852 may be spaced along the surface of the conveyor belt so that one or more substrates 201 (for example, an array of two or more substrates 201) can be positioned between each separation mechanism 852.

[0092] In addition, the separation mechanism 852 may be positioned to provide a small gap "G" between the surfaces of each separation mechanism 852, which is coupled to the conveyor belt 820 and the top of the dynamic load lock chamber 800 Part of the wall 802, the side wall 806, and/or the bottom wall 804. The gap "G" may have between 0mm and 3mm, preferably between 0mm and 0. The height "H" between 2mm and the width "W" between 1mm and 30mm. In one configuration, the gap "G" defined between each separation mechanism 852 and the top wall 802, side walls 806, and/or bottom wall 804 of the dynamic load lock chamber 800 provides a controlled fixed gap when adjacent When both the higher pressure zone and the adjacent lower pressure zone move in the desired direction as the conveyor belt 820 is moved by the mechanical drive 894, the gas arranged in the adjacent higher pressure zone (for example, area 846) is leaking When entering the adjacent lower pressure zone (for example, region 847), the controlled fixed gap will be passed. The separation mechanism 852 is used to form a known and repeatable space. The separation mechanism 852 and the substrate (for example) move from the atmospheric pressure side 812 of the first dynamic load lock chamber 800 to the processing pressure side of the first dynamic load lock chamber 800 At 814, the gas will flow through this known repeatable space. The pumping capacity of each of the actuators 831-835 and the size of the gap "G" formed between the walls 802, 804, 806 and the separation mechanism 852 are selected so that the separation mechanism 852 and the wall are separated during the substrate transfer process. 802, 804, and 806 generate a controlled air flow or "gas leakage" so that the substrate 201 is removed from the dynamic load lock chamber 800 in the forward "F" direction (that is, the first dynamic load lock chamber 120) When one end is transferred to the other end, continuously lower the The pressure above the substrate 201, or vice versa in the opposite direction "R" (ie, the second dynamic load lock chamber 192). In one embodiment, at least a portion of one or more of the separation mechanism 852 is configured to contact the walls 802, 804, 806

One or more of to minimize the gap through which gas can flow from a higher pressure area on one side of the separation mechanism to the other side of the separation mechanism.

[0093] In addition, because the back side 821 of the substrate transfer belt 820 can provide a "gas leak" path between the adjacent areas of the dynamic load lock chamber 800, the recesses 841 are provided in the one or more support plates 822 -845 is configured to ensure that the pressure condition between the back side 821 of the conveyor belt 820 and the one or more support plates 822 is maintained at the same pressure as the pressure in the remaining area of the corresponding area in fluid communication. For example, the cavity 841 is configured to ensure that the rear side 821 of the conveyor belt 820 in the area 846 is maintained at the same pressure as the pressure in the area 846.

[0094] FIG. 8C is a partial plan view of the separation mechanism 801 attached to the conveyor belt 820 according to one embodiment. Fig. 8D is a cross-sectional view of the separation mechanism taken along the line DD. FIG. 8E is a cross-sectional view of the separation mechanism 801 taken along the line EE. Fig. 8F is a schematic end view of the separation mechanism 801 from Fig. 8C.

[0095] As shown in the figure, the separation mechanism 801 is a linear member arranged across the width of the conveyor belt 820. The separation mechanism 801 includes a housing member 872 attached to the conveyor belt 820 using one or more suitable fasteners (such as screws, bolts, adhesives, etc.). The housing member 872 may be made of materials commonly used in substrate processing environments, such as stainless steel, aluminum, or suitable polymeric materials. The blade 874 is provided in the housing member 872. The blade 874 may be made of a suitable polymer material, such as a self-lubricating polymer, to provide low sliding resistance and low possibility of contamination when the blade 872 is in contact with the top wall 802 or the bottom wall 804. An example of a polymer material that can be used for the blade 874 is ORIGINAL MATERIAL "S" Splash 8000 manufactured by Murtfeldt Kunststoffe GmbH & Co. KG of Dortmund, Germany. Alternatively, the blade 874 may be made of other materials, such as metallic materials (for example, stainless steel, aluminum) or graphite.

[0096] A spring member 876 is used to load the blade 874 with a spring in the housing member 872. The spring member 876 may be a mechanical spring. Alternatively, the spring member 876 may include a magnetic actuator, a hydraulic actuator, or a pneumatic actuator. Optionally, the spring member 876 may include a gravity-activated actuation, such as a pivot or rocker that may be configured to be in an extended position under normal conditions and pivot to a retracted position if contacted. The spring member 876 may be disposed in the slot 878 and contact the housing part 872 so that the upper portion 880 of the blade 874 extends through the opening 882 in the housing part 872 and beyond the upper surface 884 of the housing part 872. Thus, the blade 874 provides a gap "G" between the separation mechanism 801 and the top wall 802 and/or the bottom wall 804. Preferably, when the substrate is transferred through the dynamic load lock chamber 800, the blade 874 contacts the top wall 802 and/or the bottom wall 804 to minimize gas leakage between the discrete areas of the chamber 800. In addition, because the blade 874 is spring-loaded, a small frictional force between the separation mechanism 801 and the top wall 802 or the bottom wall 804 is provided during contact. Therefore, the probability of contamination in the dynamic load lock chamber 800 is significantly reduced.

[0097] The separation mechanism 801 further includes an end member 886 provided at each end of the separation mechanism 801. A spring member 888 is used to spring load each end member 886 within the blade 874. The spring member 888 may be disposed in the slot 890 and contact the blade 874 so that the outer portion 892 of the end member 886 extends outside the outer surface of the blade 874. Thus, each end member 886 provides a small gap (eg, the same size as the gap "G") between the separation mechanism 801 and the corresponding side wall 806. Preferably, when the substrate is transferred through the dynamic load lock chamber 800, each end member 886 is in contact with the corresponding side wall 806 to minimize gas leakage between discrete areas of the chamber 800. In addition, because the end member 886 is spring loaded, a small frictional force between the separation mechanism 801 and the side wall 806 is provided during contact. In addition, the spring member 888 may be made of the same material as the blade 874, such as a self-lubricating polymer. Therefore, the probability of contamination in the dynamic load lock chamber 801 is significantly reduced. The end member 874 is generally configured to form a desired gap (eg, gap "G") between the outer surface of the end member 874 and the surface 822A of the support plate 822 and the inner surfaces of the side walls 806 and the top wall 802. As described above, the gap "G" is small enough to minimize the dynamic loading when the transfer substrate 201 passes through the dynamic load lock chamber 800.

"Gas leakage" between adjacent areas of the lock chamber 800 is loaded.

[0098] Processing system configuration example

[0099] FIGS. 9A to 9C illustrate further examples of different embodiments of the processing system 100. It should be noted that the processing chambers 940-945 illustrate that FIGS. 9A-9C may include one of the processing chambers (such as the processing chambers 400, 500, 600, 700 discussed herein). Generally speaking, the processing system 100 illustrated in FIGS. 9A to 9C will include a substrate receiving chamber 105, one or more processing chambers 940-945, and a substrate unloading chamber 195. Although FIG. 9A illustrates a processing system adapted to process substrates of a single row (RJ, and each of FIGS. 9B to 9C illustrates a processing system adapted to process substrates of two rows (Ri-Rj), because More or fewer rows of substrates can be desirably processed in any of these processing system 100 configurations illustrated in any of these figures or the figures illustrated above, so these configurations are not It is intended to limit the scope of the invention described herein.

[0100] FIG. 9A illustrates an embodiment of a substrate processing system 100 that allows a simplified transfer of a substrate stacker or wafer cassette between the input portion and the output portion of the processing system 100. In these configurations, the wafer or stacking box emptied by the automated components in the substrate receiving chamber 105 is subsequently transferred to the substrate unloading chamber 195, where the emptied stacking box or wafer can then be received in The processed substrate in the system. In one configuration, the processing system 100 may include a substrate receiving chamber 105, a preprocessing chamber 930, at least one processing chamber (such as a first processing chamber 940 (for example, processing chambers 500, 700)), and at least one support Chambers (for example, chambers 400, 600), and substrate unloading chamber 195. During processing, the substrate receiving chamber 105 is configured to receive substrates (eg, substrate 200) from the substrate transfer interface 921 and position the substrates on a part of the substrate automation system 515 to transfer the substrates through the processing system 100 Exists in the various processing chambers. The substrate transfer interface 921 will generally receive substrates from one or more modular substrate conveyors 123 that are configured to receive a wafer cassette or stacking box containing multiple substrates. In one configuration, the actuator assembly 122 provided in the inlet portion 910 of the substrate receiving chamber 105 is configured to transmit from the transmission interface under atmospheric pressure 921 transfers the substrate to the staging area 920 which is under an intermediate vacuum pressure due to the use of the vacuum pump 961. The actuator assembly 122 can then position the transferred substrate onto a part of the substrate automation system 515. Then move the substrates positioned in the substrate automation system 515 ± in the direction "M" through the processing chamber until the substrates reach the second end 21L of the processing system 100. Once the substrate is at the second end 211, then use The actuator assembly 122 present in the outlet portion 970 of the substrate unloading chamber 195 removes the substrate from the substrate automation system 515. The actuator assembly 122 provided in the substrate unloading chamber 195 is generally configured to transfer the substrate from the substrate automation system 515 through the staged area 960 at an intermediate vacuum pressure by using the vacuum pump 961, and then transfer the substrates To the transmission interface 926 set in the area under atmospheric pressure. The actuator assembly 122 provided in the substrate receiving chamber 105 and the substrate unloading chamber 195 may each include one or more roller conveyors configured to be connected to the substrate automation system 515 and the interface 92K926 Support and transfer the substrates when moving the substrates between. Although the substrate 200 is being processed in the processing chamber within the processing system 100, by using one or more modular substrate transport The conveyor 923 can transport the substrate stacking box or wafer cassette emptied in the substrate receiving chamber 105 to the substrate unloading chamber 195, and the one or more modular substrate conveyors 923 are adapted to use conventional Conveyor belts, rollers, linear motors or other similar conveying systems transport these components. Although FIG. 9A only illustrates a single processing chamber adapted to process a single row (RJ) substrate, because without departing from the basic scope of the present invention described herein, the processing system 100 illustrated in FIG. 9A may contain One or more processing chambers and/or support chambers, so this configuration is not intended to limit the scope of the embodiments of the invention described herein.

[0101] FIG. 9B illustrates an embodiment of a substrate processing system 100 that allows the substrate to be positioned at

The substrate is removed from the processing system 100 within the processing system 100 and from the same end, so that it is easier to connect the processing system 100 to other upstream processing systems and downstream processing systems existing in a solar cell manufacturing plant (fab). In one configuration, the processing system 100 may include a substrate receiving chamber 105, at least one processing chamber (such as first processing chambers 940-943 (for example, processing chambers 500, 700)), and at least one support chamber 930, 950, 951 (for example, chamber 400, 600) and substrate unloading chamber 195. In one configuration, the chamber 950 contains a substrate redirection device similar to the substrate redirection device illustrated in FIG. 7A as discussed above.

[0102] During processing, the substrate receiving chamber 105 is configured to receive substrates (for example, the substrate 200) from the substrate transfer interface 921 and position the substrates on a part of the substrate automation system 515 to transfer the substrates through Each processing chamber existing in the first processing area 901 of the processing system 100 is processed. It should be noted that the substrate is transferred from the substrate transfer interface 921 to the first part of the substrate automation system 515 (hereinafter referred to as the first substrate automation system 515A), and from the second part of the substrate automation system 515 (hereinafter referred to as the second substrate automation system) 515B) The process of transferring to the substrate transfer interface 926 in the configuration of the processing system 100 illustrated in FIG. 9B is similar to the above discussion and therefore the process is not described herein. Once the substrates are positioned on the first substrate automation system 515A by using an automated device (for example, the actuator assembly 122), the substrates are then moved in the direction M/ through the first processing area provided in the processing system 100 And process the substrates in the processing chambers in 901 until the substrates reach the second end 211. Once the substrates are at the second end 211, then by using one or more actuators The processor assembly 981 transfers the substrates from the first substrate automation system 515A in the first processing area 901 to the second processing area 902 (FIG. 7B). The second substrate automation system 515B of the second substrate automation system 515B then moves in the direction "M?" The substrate positioned on the second substrate automation system 515B passes through the processing chambers provided in the second processing area 902 and processes the substrates in these processing chambers. Wait for the substrates until the substrates reach the third end 213 of the processing system 100. The processed substrate is then removed from the substrate automation system 515B by using the actuator assembly 122 present in the outlet portion 970 of the substrate unloading chamber 195.

[0103] The actuator assembly 981 is generally configured to receive substrates from the end of the first part of the first substrate automation system 515A and then sequentially transfer the substrates arriving at the end of the first part of the first substrate automation system 515A to the first substrate automation system 515A. A substrate automation system 515B. The actuator assembly 981 may include a first set of motorized rollers or a first roller 983, and a second set of motorized rollers or a second roller 982, which are positioned perpendicular to each other to allow the substrate to be positioned adjacently The substrate automation system or the rapid movement to the adjacent substrate automation system. In one example, as illustrated in FIGS. 9B and 9C, at least one actuator assembly 981 is configured to receive substrates 200 from the exit conveyor 222 and position the substrates 200 on the first roller 983. The substrate is received from the first substrate automation system 515A provided in the first processing area 901. Once the substrate has been received and supported by the first roller 983, the second roller 982 is actuated relative to the first roller 983, so that the substrate is now supported on the second roller 982. Then once the substrate is supported by the second roller 982, the second roller 982 is actuated so that the second roller 982 is in a direction perpendicular to the direction in which the first roller 983 receives the substrate from the substrate automation assembly ( For example, the substrate 200 is moved in the direction "Τ"). Next, the actuator assembly 981 can be moved The substrate is sent to the second actuator assembly 981 so that the substrate can be positioned on the second part of the substrate automation assembly or the second substrate automation system 515B. The substrate can be positioned on the second substrate automation system 515B by using one or more sets of motorized rollers 982, 983. It should be noted that the process of loading the substrate 200 onto the second substrate automation system 515B is similar to the process of unloading the substrate from the first substrate automation system 515A, except that the process steps are performed in reverse. In this substrate transfer configuration, the solar cell substrates, which are often fragile, are unlikely to be broken or cracked due to the load applied during the transfer process, because the substrates are always at least partially supported by a plurality of rollers.

[0104] In a configuration of the processing system 100 similar to the configuration illustrated in FIG. 9B, the substrate receiving chamber 105

Coupled with the substrate unloading chamber 195 so that the substrate receiving chamber 105 can receive the wafer cassette containing multiple substrates (for example, the substrate 200) from the substrate transfer interface 921, and unload the substrate from the wafer cassette to the first substrate automation system 515A and then directly transfer the received unloaded cassette to the substrate unloading chamber 195, and then the processed substrate can be reloaded into the waiting cassette in the substrate unloading chamber 195, and then can be removed from the processing system Remove the crystal case. In one embodiment, the substrate receiving chamber 105 and the substrate unloading chamber 195 are coupled together and maintained at a pressure lower than atmospheric pressure by using a vacuum pump (not shown), so that the substrate receiving chamber 105 receives From the time of the crystal cassette, the crystal cassette can be kept under vacuum pressure until the crystal cassette exits the substrate unloading chamber 195. The substrate receiving chamber 105 and the substrate unloading chamber 195 may each contain a load lock area that is configured to receive the crystal cassette and is also evacuated and exhausted between vacuum and atmospheric pressure. Conveyors or robotic actuators can be used to transfer the wafer cassette between the substrate receiving chamber 105 and the substrate unloading chamber 195 while the environment around the wafer cassette is maintained under vacuum pressure.

[0105] FIG. 9C illustrates an embodiment of a substrate processing system 100 that allows for in-situ processing of substrates using a process that integrates different processing times to provide high substrate yield. In one configuration, the processing system 100 may include one or more substrate receiving chambers 105, at least one processing chamber (such as the first processing chambers 940-945), at least one support chamber 930, 951 (for example, chamber 400, 700), and one or more substrate unloading chambers 195. Thus, in a configuration, as illustrated in FIG. 9C, the processing system 100 contains two processing chambers 940, 941 in the first processing area 901 of the processing system 100, and two processing chambers 940, 941 in the second processing area 902 of the processing system 100. Two processing chambers 942, 944 and two processing chambers 943, 945 in the third processing area 903 of the processing system 100. In the configuration shown in the figure, the process performed in the first processing area 901 of the processing system 100 allows the first part of the substrate automation assembly or the first substrate automation system 515A to transfer and process substrates at high speed, while in the second processing The processes performed in the area 902 and the third processing area 903 will only allow the second substrate automation assembly 515B and the third substrate automation assembly 515C to respectively transfer substrates at a second speed lower than the first high speed. In one example, the first substrate automation assembly 515A The substrate is adapted to transfer the substrate through the processing chambers 940, 940 and the support chambers 930, 951 at a speed of about 5 meters per minute, and the first part and the third part of the substrate automation assembly 515B.515C are adjusted to about 2.5 meters. The substrate is transported through the processing chamber and the support chambers existing in the processing areas 902 and 903 at a speed per minute.

[0106] During processing, the substrate receiving chamber 105 is configured to receive substrates (for example, the substrate 200) from the substrate transfer interface 921 and position the substrates on the first substrate automation system 515A so that the substrates can be transported through Through each processing chamber existing in the first processing area 901 of the processing system 100. As discussed above, once the substrates have been received and processed by the processing chamber existing in the first processing area 901, the substrates can be processed by the components in the chamber 950 and/or by using the first processing system 100 One or more actuator assemblies 981 at the two ends 222 selectively transfer the substrates to the second processing area 902 and the third processing area 903, respectively. The substrates received by the second substrate automation system 515B or the third substrate automation system 515C can then be transferred through each processing chamber existing in the second processing area 902 or the third processing area 903 of the processing system 100 and processed in these The substrates are processed in the chamber. In one example, the passivation/ARC layer stack 320 (FIG. 3) is formed on the substrate 200 that is transferred through the first processing area 901 using a first automated system 515A that is configured to first transfer Speed transfer at least one row of substrates (RJ, and the rear surface passivation layer stack 340 is formed using the second automated system 515B and the third automated system The system 515C transfers the substrate 200 passing through the second processing area 902 or the third processing area 903. The second automation system 515B and the third automation system 515C are each configured to transfer at least one row of substrates at a second transfer speed (RJ In one example, the first automation system 515A can be configured to transfer two rows of substrates at a first transfer speed, and the second automation system 515B and the third automation system 515C are each configured to transfer two rows at a second transfer speed The substrate,

The first transfer speed is twice the second transfer speed. In one example, the first automated system 515A can be configured to transfer a single row of substrates at a first transfer speed, and the second automated system 515B and the third automated system 515C are each configured to transfer two rows of substrates at a second transfer speed , Where the first transfer speed is four times faster than the second transfer speed.

[0107] Referring to FIG. 9C, once the substrate is at the third end 213, it is then moved from the substrate automation system 515 by using one or more actuator assemblies 122 present in the staged region 960 of the substrate unloading chamber 195 In addition to the substrate. In one embodiment, the one or more actuator assemblies 122 disposed in the substrate unloading chamber 195 are generally configured to transfer the substrate 200 from the substrate automation system 515B.515C through the substrate by using a vacuum pump (not shown) ) A step area 960 of the intermediate vacuum pressure reached, and then the substrates are transferred to the transfer interface of one or more subsequent processing systems 196 disposed in the area under atmospheric pressure. The actuator assemblies 122 provided in the substrate unloading chamber 195 may each include one or more roller conveyors that are configured to support and support the substrate when moving the substrate between the substrate automation system and the interface 926. Transfer these substrates. In some configurations, the one or more subsequent processing systems 196 may include one or more substrate conveyors adapted to transport processed substrates to one or more metals Chemical chamber (such as, available from Applied Materials Italia S. r. 1. The screen printing chamber (for example, Soft LineTM system), so that metal containing jelly can be deposited on the surface of the substrate to form metal contacts in contact with various areas of the substrate. An example of a screen printing system that can be coupled to the substrate unloading chamber 195 is further described in US Patent Publication No. 2009/0305441 filed on April 6, 2009, which is incorporated by reference in its entirety.

[0108] Processing sequence example

[0109] FIG. 10 is a block diagram illustrating a processing sequence performed on a plurality of substrates in a processing system according to an embodiment of the present invention described herein. In one embodiment, the processing sequence 1000 may be performed in a processing system similar to the processing system 100 illustrated in FIGS. 2B to 2C. It should be noted that the processing sequence illustrated in FIG. 8 is only used as a method for manufacturing solar cells. An example of the process flow of the device. In addition, steps can be added between any of the steps illustrated in FIG. 10 according to the requirements of different device structure requirements. Similarly, one or more steps described herein can also be cancelled as needed.

[0110] In one embodiment, the processing sequence 1000 performed on the plurality of substrates processed in the processing system 100 starts at step 1002. In this step 1002, a plurality of substrates 200 are prepared and the plurality of substrates 200 is transported to the processing system 100. As described above, the processed substrate can be transported to the substrate transfer interface 12L via the modular conveyor 123. In one example, the preprocessed substrate includes a p-type doped base region 301 formed in the substrate 200 and The substrate of the n-type doped emitter region 302, the substrate 200 has been textured and chemically cleaned, so that the substrate can be further processed in a vacuum environment to form a passivation/ARC layer stack 320 on the textured front surface 305 of the substrate 200 And a back surface passivation layer stack 340 is formed on the back surface 306 of the substrate 200 in the processing system 100. The cleaning process performed on the substrate 200 before being inserted into the processing system 100 is generally used to remove any undesirable materials that may affect the properties of the passivation layer and/or may contaminate the processing area 210 of the processing system 100. Can use cleaning solutions (such as the final HF cleaning solution, ozone water cleaning solution, hydrofluoric acid (HF) and hydrogen peroxide (H₂0₂) The substrate 200 is cleaned by a wet cleaning process of a) solution or other suitable cleaning solution). In some configurations, the substrate 200 may be a single crystal silicon substrate or a polycrystalline silicon substrate, a substrate containing a substrate, a substrate containing doped silicon, or other suitable substrates. In the embodiments described herein, as discussed above in conjunction with FIG. 3, the substrate 200 is a p-type crystalline silicon (c-Si) substrate.

[0111] Next, at step 1004, the substrate receiving chamber 105 receives substrates from one or more modular substrate conveyors 123, the one or more modular substrate conveyors 123 configured to receive Cassettes or stacks of substrates

box. In one configuration, the actuator assembly 122 (eg, conveyor, robot) provided in the substrate receiving chamber 105 is configured to transfer the substrate from the modular substrate conveyor 123 under atmospheric pressure to the dynamic load lock chamber In the chamber 120, the substrates are then moved through the processing chamber coupled to the processing area 210 in the processing system 100. The actuator assembly 122 can be used to transfer the substrate to the surface of the conveyor 220 in a first direction (for example, +X axis direction) in sequence, so that at least one column (for example, , R plant R?) substrate.

[0112] At step 1006, the substrate is transferred through one or more pretreatment chambers, such as the process chamber 130 (FIG. 2B) containing the process chamber 400 (FIG. 4) discussed above) to prepare A substrate used for the deposition process performed in the subsequent processing chamber. In one configuration, the pre-processing chamber is configured to deliver energy (such as radiant thermal energy) to the substrates as they are transferred by the substrate automation assembly 515 through the portion of the processing area 210 present in the pre-processing chamber. In one example, the pretreatment chamber component is configured to heat the substrates to a temperature between about 100°C and 450°C as the substrates are transferred through the processing area of the pretreatment chamber. In some configurations, heating, dry etching, doping, or other similar processes may be performed on the plurality of substrates while sequentially transferring the plurality of substrates through the processing area of the pretreatment chamber.

[0113] At step 1008, when the substrate is transferred relative to the deposition sources 560A-560D by using the substrate automation system 515, two or more deposition sources (for example, deposition sources 560A, 560B, 560C, 560D) are used in One or more layers of the passivation/ARC layer stack 320 are formed on the front surface 305 of the substrate 200, and the two or more deposition sources are provided in the portion of the processing area 210 provided in the processing chamber 140. In one configuration, the processing chamber 140 may include the processing chamber 500 illustrated in FIGS. 5A to 5D. In one example, the passivation/ARC layer stack 320 may include two or more anti-reflection/passivation layers, and the two or more anti-reflection/passivation layers may include silicon oxide and/or nitride. silicon. In one example, during processing in the processing chamber, the first gas source 528 and the second gas source 529 are configured to combine one or more types of deposition sources 560A-560D provided in the processing chamber 140. The precursor gas or carrier gas is delivered to the surface of the substrate 200. The first gas source 528 and the second gas source 529 can be adapted to silane (SiH₄), ammonia (NH₃), nitrogen (%) and hydrogen (H₂) Is transported to the processing area 525 formed above the substrate 200. The power supply 530 may be adapted to deliver radio frequency energy (for example, 100W to 4kW at up to 13.56 MHz) to the processing gas disposed in the processing area 525 above the substrate 200. In one embodiment, the first deposition source 560A and the second source 560B are configured to provide nitrogen (%) and silane (SiH) at a ratio Z/SiHj of about 1:1 or less.₄) The first layer 321 of the passivation/ARC layer stack 320 is formed, and the heating element 584 is used to maintain the substrate at a temperature between about 300-400 Ό, and the power supply 530 provides about 4000 watts of radio frequency power and maintains about The processing pressure of 10 mTorr is used to form a silicon nitride (SiN) layer with a thickness between about 50 angstroms (A) and about 350 angstroms on the surface of the substrate. The third deposition source 560C and the fourth source 560D can also be configured to provide nitrogen (%) and silane (SiH) at a ratio of Z/SiH» of about 1:1 or greater.₄) And about 1:1 ratio (NHs/SiH» of ammonia (NH₃) And silane on the first layer 321 to form the second layer 322 of the passivation/ARC layer stack 320, and at the same time, the heating element 584 is used to maintain the substrate at a temperature between about 300-400°C, and the power supply 530 provides about 4000 watts of radio frequency power and maintaining a processing pressure of about 10 mTorr to form a silicon nitride (SiN) layer with a thickness between about 400 angstroms (A) and about 700 angstroms on the surface of the substrate.

[0114] At step 1010, the substrate is optionally redirected to perform a deposition process on the back surface 306 of the substrate, which is on the side of the substrate 200 opposite to the front surface 305. The process of redirecting the substrate is generally similar to the process described above in connection with FIGS. 7A to 7B discussed above. In one configuration of the processing sequence 1000, the substrates 200 are all redirected in groups (for example, at least one row of substrates (for example, two substrates in a two-row (R factory R?) configuration)). In one example, in order to allow the substrate to be redirected, the substrates set in the substrate automation system 515 ± are grouped

The group is transferred to a redirecting device (such as the redirecting device 705 illustrated in FIG. 7A), and then all the substrates set in the substrate automation system 515± are temporarily stopped so that the redirecting device can direct the substrate from the face up The configuration is "flipped" to the downward facing configuration. However, it is generally desirable to make each conveyor 220, 221, 222 in the substrate automation system 515 move at a continuous speed to achieve high substrate output requirements for the solar cell manufacturing industry.

[0115] At step 1012 and step 1014, the back surface passivation layer stack 340 is deposited on the second surface 306 (for example, the back surface) of the substrate 200. The back surface passivation layer stack 340 may be a dielectric layer that provides interface properties that reduce recombination loss in the formed solar cell device. In one embodiment, the rear surface passivation layer stack 340 can be made of a dielectric material selected from the group consisting of: silicon nitride (Si₃N₄), silicon nitride hydride (SixNy:H), silicon oxide, silicon oxynitride, a composite film of silicon oxide and silicon nitride, an aluminum oxide layer, an oxide clamp layer, a titanium dioxide layer or any other suitable material. In one configuration, the rear surface passivation layer stack 340 includes a first rear surface layer 341 that includes an aluminum oxide layer (A1₂0₃) ο When the substrate is transferred relative to the deposition sources 560A-560D by using the substrate automation system 515, the alumina layer can be formed by using two or more deposition sources (for example, deposition sources 560A, 560B, 560C, 560D) (Α1₂0₃), the two or more deposition sources are arranged in the part of the processing area 210 arranged in the processing chamber 160. In one configuration, the processing chamber 160 may include the processing chamber 500 illustrated in FIGS. 5A to 5D. In one example, during processing in the processing chamber, the first gas source 528 and the second gas source 529 are configured to combine one or more types of deposition sources 560A-560D provided in the processing chamber 160. The precursor gas or carrier gas is delivered to the surface of the substrate 200. The first gas source 528 and the second gas source 529 can be adapted to combine trimethylaluminum (TMA) with oxygen (0₂) Is transported to the processing area 525 formed above the substrate 200. The power supply 530 may be adapted to deliver radio frequency energy (for example, 100W to 4kW at up to 13.56 MHz) to the processing gas disposed in the processing area 525 above the substrate 200. In one embodiment of the process sequence 800, the first deposition source 560A and the second source 560B are configured to provide trimethylaluminum (TMA) and oxygen (0J) in a ratio (TMA/O?) of about 1:3. The first rear surface layer 341 is formed, while the substrate is maintained at a temperature of about 350°C by using the heating element 584, and the power supply 530 provides about 4000 watts of radio frequency power and maintains a processing pressure of about 10 mTorr to form on the surface of the substrate 200 The thickness of the aluminum oxide layer (Α1₂0₃)。

[0116] At step 1014, optionally, the second rear surface layer 342 in the rear surface passivation layer stack 340 is deposited on the first rear surface 306 (for example, the back surface) disposed on the second surface 306 (for example, the back surface) of the substrate 200. On the surface layer 341. The second back surface layer 342 may be a dielectric layer that provides good insulation properties, main body passivation properties, and serves as a diffusion barrier for the subsequent metallization layer. At step 814, when the substrate is transferred relative to the deposition sources 560A-560D by using the substrate automation system 515, two or more deposition sources (for example, deposition sources 560A, 560B, 560C, 560D) are used on the substrate 200. A second rear surface layer 342 is formed on the second surface 306, and the two or more deposition sources are provided in the portion of the processing area 210 provided in the processing chamber 180. In one configuration, the processing chamber 180 may include the processing chamber 500 illustrated in FIGS. 5A to 5D. In one example, the second back surface layer 342 may include one or more passivation layers, and the one or more passivation layers may include silicon nitride. In one example, during the processing in the processing chamber, the first gas source 528 and the second gas source 529 are configured to combine one or more types of deposition sources 560A-560D provided in the processing chamber 180. The precursor gas or carrier gas is delivered to the surface of the substrate 200. The first gas source 528 and the second gas source 529 can be adapted to remove silane (SiH₄), ammonia (NHJ, nitrogen (%) and hydrogen (H₂) Is transported to the processing area 525 formed above the substrate 200. The power supply 530 may be adapted to deliver radio frequency energy (for example, 100W to 4kW at up to 13.56 MHz) to the processing gas disposed in the processing area 525 above the substrate 200. In one embodiment, the first deposition source 560A, the second source 560B, the third source 560C, and the fourth source 560D in the processing chamber 180 are configured to provide a ratio (N₂/SiH₄) Of nitrogen (%) and silane (SiH₄) And a ratio of approximately 1:1 (NH₃/SiH₄) Of ammonia (NH₃) And silane on the first rear surface layer 341 to form the first

The second rear surface layer 342, while maintaining the substrate at a temperature of about 300-400°C by using the heating element 584, the power supply 530 provides about 4000 watts of radio frequency power and maintains a processing pressure of about 10 mTorr on the surface of the substrate. A silicon nitride (SiN) layer with a thickness between about 400 angstroms (A) and about 700 angstroms is formed.

[0117] At step 1016, the substrate 200 may be further processed in the processing chamber 190 before exiting the processing system 100 as appropriate. These post-processing steps can be performed in one or more additional processing chambers as necessary to help reliably form the desired solar cell device. In one embodiment, the post-processing step may include the following steps: a heat treatment (for example, rapid thermal annealing, a step of dopant driving), a laser ablation of the area of the substrate 200 to form a surface on any surface of the substrate. The steps of opening holes in the passivation layer to subsequently form backside field (BSF) regions and electrical contacts to the surface of the substrate 200, and/or other deposition process steps (such as PVD or vapor deposition type contact layer deposition steps). In one example, an aluminum-containing layer is deposited on the back surface passivation layer stack 340 in the processing chamber 190 by an evaporation process to form a metal contact to a portion of the back surface 306 of the substrate 200. The contact area generated on the substrate 200 can be formed by using a laser ablation process performed after forming the back surface passivation layer stack 340 and before the aluminum layer deposition process step.

[0118] Next, at steps 1018 and 1020, the substrate unloading chamber 195 receives the substrates 200 from the dynamic load lock chamber 192 and transfers the substrates 200 to one or more modular substrate conveyors 127. One or more modular substrate conveyors 127 are configured to contain and transfer the wafer cassettes or stacks of processed substrates. In one configuration, the actuator assembly 122 (eg, conveyor, robot) provided in the substrate unloading chamber 195 is configured to transfer the substrate from the substrate automation system 515. The actuator assembly 122 then positions the substrates into the crystal cassettes provided on the modular substrate conveyor 127 so that the substrates can then be moved to other areas of the substrate production facility. At step 1020, the plurality of processed substrates 200 are then removed from the processing system 100 via the modular conveyor 127.

[0119] Thus, embodiments of the present invention generally provide a solar cell processing system that includes: a substrate automation system having a substrate configured to transfer a substrate in a first direction through a processing area sequentially One or more conveyors; a first processing chamber, the first processing chamber having two or more first deposition sources disposed in the processing area, wherein each first deposition source is configured to be on the substrate When two or more first deposition sources are transferred through the processing area, the processing gas is separately delivered to the surface of each of the substrates; and a second processing chamber, the second processing chamber having Two or more first deposition sources in the processing area, wherein each second deposition source is configured to separate the processing gas when the substrate is moved through the processing area relative to the two or more second deposition sources Ground to the surface of each of the substrates.

[0120] Although the above is about the embodiments of the present invention, other and further embodiments of the present invention can be envisaged without departing from the basic scope of the present invention, and the scope of the present invention is determined by the appended claims .