Magnetic memory device

Magnetic storage device

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This US formal patent application is based on the requirements of 35U.SC§ 119 for Korean Patent Application No. 10-2009-0093306 filed on September 30, 2009 and Korean Application No. 10-2009 filed on September 11, 2009 -0086084 priority rights, the entire disclosure of which is incorporated herein by reference.

Technical field

[0003] Here, the present disclosure relates to a memory device, and more specifically, to a magnetic storage device.

Background technique

[0004] With the realization of high-speed operation and low power consumption of electronic devices, memory devices may also require fast read/write performance and low operating voltage. As a memory device, magnetic memory devices are being studied to provide increased speed and reduced operating voltage. Because the magnetic storage device can provide high-speed operation and/or non-volatile characteristics, the magnetic storage device attracts attention for the next memory.

[0005] A well-known magnetic memory device may include a magnetic tunnel junction pattern (MTJ). The magnetic tunnel junction pattern is formed of two magnetic substances and an insulating layer interposed therebetween, and the resistance value of the magnetic tunnel junction pattern may vary according to the magnetization directions of the two magnetic substances. Specifically, when the magnetization directions of the two magnetic substances are antiparallel to each other, the magnetic tunnel junction pattern may have a high resistance value. When the magnetization directions of the two magnetic substances are parallel to each other, the magnetic tunnel junction pattern may have a low resistance value. The difference between these resistance values can be used to write/read data.

Summary of the invention

[0006] According to some embodiments of the principles of the present invention, a magnetic memory device can provide enhanced reliability, high magnetoresistance ratio, and/or reduced operating power.

[0007] In some embodiments, a magnetic memory device may include a tunnel barrier on a substrate, a first junction magnetic layer and a second junction magnetic layer, and a non-magnetic layer. The first junction magnetic layer may contact one surface of the tunnel barrier. The first perpendicular magnetic layer may be separated from the tunnel barrier by the first junction magnetic layer. The second junction magnetic layer may contact the other side of the tunnel barrier, and the second perpendicular magnetic layer may be separated from the tunnel barrier by the second junction magnetic layer. The non-magnetic layer may be between the first junction magnetic layer and the first perpendicular magnetic layer.

[0008] In other embodiments, when the magnetic storage device is operating, the magnetization directions of the first perpendicular magnetic layer and the second perpendicular magnetic layer may be perpendicular to the plane of the substrate.

[0009] In another embodiment, another non-magnetic layer may be inserted between the second junction magnetic layer and the second perpendicular magnetic layer.

[0010] In other embodiments, the first junction magnetic layer and/or the second junction magnetic layer may have a first crystal structure, and the first perpendicular magnetic layer and/or the second perpendicular magnetic layer may have a crystal structure different from the first crystal structure. Structure of the second crystal structure.

[0011] In another embodiment, the crystal plane of the tunnel barrier at the interface between the tunnel barrier and the first junction may be the same as the crystal plane of the first junction magnetic layer at the interface. The first crystal structure can be NaCl type crystal structure or BCC

Crystal structure, and the crystal plane can be (001) crystal plane.

[0012] In another embodiment, the second crystal structure may be an L10 crystal structure, an FCC crystal structure, or a hexagonal close packed (HCP) crystal lattice.

[0013] In another embodiment, the first perpendicular magnetic layer and/or the second perpendicular magnetic layer may include

RE-TM (rare earth transition metal) alloy.

[0014] In another embodiment, the first perpendicular magnetic layer and/or the second magnetic layer may include a non-magnetic metal layer and a ferromagnetic metal layer alternately stacked multiple times, and the ferromagnetic metal layer may have one to several The thickness of the atom.

[0015] In another embodiment, the first junction magnetic layer and/or the second junction magnetic layer may include an alloy magnetic material, the alloy magnetic material including from diamond (Co), iron (Fe) and nickel (Ni) ) At least one selected from the group consisting of, and the alloy magnetic substance may further include a non-magnetic element.

[0016] In some embodiments, the non-magnetic layer may have a thickness in the range of about 2A (Angstrom) to about 20A (Angstrom).

[0017] In other embodiments, the non-magnetic layer may include at least one selected from non-magnetic metals. The non-magnetic metal may be at least one selected from non-magnetic transition metals.

[0018] In other embodiments, the first perpendicular magnetic layer and the first junction magnetic layer may be exchange-coupled with each other through a non-magnetic layer.

[0019] In other embodiments, the non-magnetic layer may further include a metal compound layer contacting the top surface and/or the bottom surface of the non-magnetic layer, and the metal compound layer may include a metal oxide, a metal nitride, and/or a metal compound layer. At least one selected from the group consisting of metal oxynitride.

[0020] In other embodiments of the principles of the invention, the magnetic memory device may include a tunnel barrier on the substrate, a free magnetic layer contacting one surface of the tunnel barrier and having a plane parallel to the plane of the substrate, and a contact tunnel The other side of the barrier has a reference magnetic layer parallel to the plane of the substrate. The free magnetic layer and the reference magnetic layer may include iron (Fe), and the iron content of the free magnetic layer may be equal to or greater than the iron content of the reference magnetic layer.

[0021] In some embodiments, the iron (Fe) content of the free magnetic layer may be in the range of about 40% by atom to about 60% by atom.

[0022] In other embodiments, the free magnetic layer and/or the reference magnetic layer may further include at least one selected from Co and Ni.

[0023] In other embodiments, the free magnetic layer and/or the reference magnetic layer may further include non-magnetic elements.

[0024] In other embodiments, when the magnetic storage device is operating, the free magnetic layer and the reference magnetic layer may have magnetization directions perpendicular (orthogonal) to the plane/surface of the substrate.

[0025] In other embodiments, when the magnetic storage device is operating, the free magnetic layer and the reference magnetic layer may have magnetization directions parallel to the plane/surface of the substrate.

[0026] In other embodiments of the principles of the present invention, the magnetic storage device may include a substrate. The first magnetic substance, the tunnel barrier, and the second magnetic substance may be sequentially stacked on the substrate. The first magnetic substance may include a first vertical magnetic layer that is adjacent to the substrate and has a hexagonal close packed (HCP) lattice structure.

<td>[0027][0028][0029]</td><td>In some embodiments, the C-axis of the hexagonal close-packed lattice may be substantially perpendicular to the plane of the substrate. In other embodiments, the C axis is an axis where the first perpendicular magnetic layer can be easily magnetized. In other embodiments, the magnetic storage device may further include a magnetic storage device between the substrate and the first vertical magnetic layer.</td>

The seed layer including the HCP lattice.

[0030] In other embodiments, the second magnetic substrate may further include a second vertical magnetic layer having a hexagonal close-packed lattice structure.

[0031] In other embodiments, the first magnetic substance may include a first magnetic junction layer adjacent to the tunnel barrier on the first vertical magnetic layer, and the second magnetic substance may include a first magnetic junction layer below the second vertical magnetic layer and The second magnetic junction layer adjacent to the tunnel barrier.

[0032] In another embodiment, the second magnetic junction layer and the first magnetic junction layer may include a soft magnetic material.

[0033] In another embodiment, the magnetic storage device may further include exchange between the first perpendicular magnetic layer and the first magnetic junction layer and/or between the second perpendicular magnetic layer and the second magnetic junction layer Coupling control layer.

[0034] In another embodiment, the exchange coupling control layer may include at least one selected from metal elements including transition metal elements.

[0035] In another embodiment, the exchange coupling control layer may further include an oxide layer formed by oxidation of the surface of the exchange coupling control layer.

[0036] In an alternative embodiment, the second magnetic substance may further include a non-magnetic layer and a ferromagnetic layer alternately stacked multiple times on the second perpendicular magnetic layer. The ferromagnetic layer may have an atomic layer thickness.

[0037] In another alternative embodiment, the first perpendicular magnetic layer may include a disordered drill clamp alloy having a clamp content in a range of about 10% atomic percent to about 45% atomic percent.

[0038] In another alternative embodiment, the first perpendicular magnetic layer may include Co₃Pto

[0039] In another alternative embodiment, the first perpendicular magnetic layer may further include at least one selected from the group consisting of boron (B), lo (Cr), and copper (Cu).

[0040] In other alternative embodiments, the tunnel barrier may include oxides of magnesium (Mg), titanium (Ti), aluminum (Al), magnesium zinc (MgZn) and/or magnesium boron (MgB), And/or at least one selected from the group consisting of nitrides of titanium (Ti) and/or organic (V).

[0041] In another alternative embodiment, the magnetic storage device may further include a capping layer on the first magnetic substance. The capping layer may comprise from clamp (Ta), aluminum (A1), copper (Cu), gold (Au), silver (Ag), titanium (Ti), nitride clamp (TaN) and/or titanium nitride (TiN) ) At least one selected from the group consisting of.

[0042] In other alternative embodiments, when the magnetic storage device is operating, current may flow in a direction substantially perpendicular to the plane of the substrate.

[0043] In other alternative embodiments, the magnetization directions of the second magnetic layer and the first magnetic layer may be substantially perpendicular to the plane of the substrate.

[0044] According to some embodiments, a magnetic storage device may include a first perpendicular magnetic layer, a non-magnetic layer on the first perpendicular magnetic layer, and a first junction magnetic layer on the non-magnetic layer, wherein the non-magnetic layer is on the first Between the perpendicular magnetic layer and the first junction magnetic layer. The tunnel barrier may be on the first junction magnetic layer, wherein the first junction magnetic layer is between the non-magnetic layer and the tunnel barrier. The second junction magnetic layer may be on the tunnel barrier, where the tunnel barrier is between the first junction magnetic layer and the second junction magnetic layer. The second vertical magnetic layer may be on the second junction magnetic layer, wherein the second junction magnetic layer is between the tunnel barrier and the second vertical magnetic layer.

[0045] According to some other embodiments, the magnetic memory device may include: a free magnetic layer containing iron (Fe), a tunnel barrier on the free magnetic layer, and a reference magnetic layer containing iron (Fe) on the tunnel barrier. Floor. The tunnel barrier may be between the free magnetic layer and the reference magnetic layer. The concentration of iron in the free magnetic layer may be at least as great as the concentration of iron in the reference magnetic layer.

[0046] According to other embodiments, the magnetic storage device may include a substrate, a first magnetic substance on the substrate, a tunnel barrier on the first magnetic substance, and a second magnetic substance on the tunnel barrier. The first magnetic substance may include a vertical magnetic layer adjacent to the substrate and having a hexagonal close-packed (HCP) lattice structure. The magnetic substance may be between the substrate and the tunnel barrier, and the tunnel barrier may be between the first magnetic substance and the second magnetic substance.

Description of the drawings

[0047] The accompanying drawings are included to provide a further understanding of the principles of the present invention, and are incorporated into and constitute a part of this specification. The drawings illustrate exemplary embodiments of the principles of the present invention, and together with the description serve to explain the principles of the principles of the present invention. In the attached picture:

[0048] FIG. 1 is a view illustrating a magnetic storage device according to a first embodiment of the principles of the present invention;

[0049] FIG. 2 is a view illustrating a modified example of the magnetic storage device according to the first embodiment of the principles of the present invention;

[0050] FIG. 3 is a view illustrating another modified example of the magnetic storage device according to the first embodiment of the principles of the present invention;

[0051] FIGS. 4A to 4C are views describing a method for a magnetic storage device according to a first embodiment of the principles of the present invention;

[0052] FIG. 5 is a view illustrating a magnetic storage device according to a second embodiment of the principles of the present invention;

[0053] FIG. 6 is a view illustrating a modified example of the magnetic storage device according to the second embodiment of the principles of the present invention;

[0054] FIG. 7 is a view illustrating a magnetic storage device according to a third embodiment of the principles of the present invention;

[0055] FIG. 8 is a view describing a method for a magnetic storage device according to a third embodiment of the principles of the present invention;

[0056] FIG. 9 is a view describing a crystal structure of a third embodiment according to the principles of the present invention; and

[0057] FIG. 10 is a view illustrating a magnetic storage device according to a fourth embodiment of the principles of the present invention.

Detailed ways

[0058] Hereinafter, a magnetic storage device according to an embodiment of the principles of the present invention and a method for forming the magnetic storage device will be described in more detail with reference to the accompanying drawings. The embodiments to be described are provided so that those skilled in the art can easily understand the spirit of the principles of the present invention, and the principles of the present invention should not be interpreted as being limited thereby. The embodiments of the inventive principle may be implemented in different forms within the technical spirit and scope of the inventive principle. In the drawings, it is possible to exaggerate the thickness and relative thickness of elements to clearly illustrate embodiments of the principles of the invention. Terms related to position, such as upper and lower in the middle, are relative expressions for clear description and should not be construed as being limited to positions between absolute elements.

[0059] By referring to the following detailed description of the embodiments and the accompanying drawings, it is easier to understand the advantages and features of the principles of the invention and the methods for implementing the principles of the invention. However, the principles of the invention can be implemented in many different forms and should not be construed as being limited to the embodiments set forth herein. On the contrary, these embodiments are provided so that the present disclosure will be comprehensive and complete, and will fully convey the principle of the invention to those skilled in the art, and the principle of the invention will be limited only by the appended claims. Throughout, the same reference numerals denote the same elements.

[0060] It should be understood that when an element is referred to as being "on," "connected to," or "coupled to" another element, the element can be directly on the other element, directly connected to the other element, or directly coupled To another element, or there may be an intervening element. In contrast, when an element is referred to as being "directly on," "directly connected to," or "directly coupled to" another element, there are no intervening elements. As used herein, the term "and/or" includes related listed items

Any one of and all combinations of one or more.

[0061] It should be understood that although the terms first, second, etc. may be used herein to describe various elements, components, layers and/or parts, these elements, components, layers and/or parts should not be limited by these terms . These terms are only used to distinguish one element, component or section from another element, component or section. Therefore, without departing from the teaching of the principles of the present invention, the following first element, first component, first layer or first part can be referred to as a second element, second part, second layer or second part.

[0062] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those of ordinary skill in the field to which the principles of the invention belong. It should be further understood that terms such as those defined in general dictionaries should be interpreted as having meanings consistent with their meanings in the context of the relevant field, and should not be interpreted in ideal or excessively formal meanings, unless explicitly defined here. .

[0063] In addition, when the terms used in this document are not specifically defined, those skilled in the art can understand all terms (including technical and scientific terms) used in this document. In addition, when the general terms defined in the dictionary are not specifically defined, these terms will have ordinary meanings in the art.

[0064] Relational terms such as "under" or "on", or "upper" or "below" or "horizontal" or "lateral" or "vertical" may be used herein to describe what is shown in the drawings. The relationship between one element, layer or region and another element, layer or region is shown. It should be understood that these terms are intended to encompass different orientations of the device in addition to the orientations described in the drawings.

[0065] The terms used herein are only for the purpose of describing specific embodiments, and are not intended to limit the exemplary embodiments. As used herein, the singular indefinite article "a" and "an" and the definite article "the" are intended to also include the plural form, unless the context clearly dictates otherwise. It should be further understood that the term "comprising" when used in this specification specifies the presence of stated features, integers, steps, operations, elements, layers and/or components, but does not exclude the presence or addition of one or more other features, integers , Steps, operations, elements, layers, parts, and/or groups thereof.

[0066] In the drawings, the illustrated features may be changed due to, for example, manufacturing technology and/or manufacturing tolerances. Therefore, it should be understood that the exemplary embodiments of the principles of the invention are not limited to the drawings, but include modification of the features of the elements due to, for example, manufacturing tolerances.

[0067] (First Embodiment and Modified Examples thereof)

[0068] With reference to FIG. 1, a magnetic memory device according to a first embodiment of the principles of the present invention will be described. The lower electrode 110 is arranged on the substrate 100. The substrate 100 may be a semiconductor-based semiconductor substrate. The substrate 100 may include a conductive area and/or an insulating area. The lower electrode 110 may be electrically connected to the conductive area of the substrate 100. The lower electrode 110 may be arranged on and/or in the substrate 100. The lower electrode 110 may have, for example, any one shape selected from the group including wires, islands, and/or plates.

[0069] The first vertical magnetic layer 123 may be disposed on the lower electrode 110. In one embodiment, the first vertical magnetic layer 123 may include a non-magnetic layer 121 and a ferromagnetic layer 122 that are alternately stacked. The ferromagnetic layer 122 may include at least one element selected from the group consisting of iron (Fe), cobalt (Co), and/or nickel (Ni), and the non-magnetic layer 121 may include an element selected from the group consisting of iron (Fe), cobalt (Co), and/or nickel (Ni). (Pt), Rake (Pd), Iron (Ir), Nail (Ru), Co (Rh), E (Os), Baht (Re), Gold (Au), and/or Copper (Cu) At least one element selected. For example, the first vertical magnetic layer 123 may be [Co/Pt]m> [Co/Pd]m> [Ni/Pt]m (m is the number of stacks per layer and is a natural number of 2 or more) or Its combination. In an embodiment, the non-magnetic layer 121 and the ferromagnetic layer 122 may be performed about 2 to about 20 times, respectively.

The stack of times within the enclosure. When current flows in a direction perpendicular (orthogonal) to the plane of the substrate 100 and the first perpendicular magnetic layer 123, the first perpendicular magnetic layer 123 may be configured such that it has a magnetization direction parallel to the current. With this configuration, the ferromagnetic layer 122 may be thinly formed to have a thickness of one to several atomic layers.

[0070] The first non-magnetic layer 130 may be disposed on the first perpendicular magnetic layer 123. The first non-magnetic layer 130 may have a relatively thin thickness. For example, the first non-magnetic layer 130 may be formed to have a thickness in the range of about 2A (Angstrom) to about 20A (Angstrom). The first non-magnetic layer 130 may not have texture. For example, the first non-magnetic layer 130 may be uniformly formed on the first perpendicular magnetic layer 123, and may not have a texture due to a thin thickness.

[0071] The first non-magnetic layer 130 may include at least one selected from non-magnetic metal elements including non-magnetic transition metals. For example, the first non-magnetic layer 130 may include magnesium (Mg), aluminum (Al), titanium (Ti), rim (Cr), nail (Ru), copper (Cu), zinc (Zn), (Ta) , Gold (Au), silver (Ag), rake (Pd), wrong (Rh), iron (Ir), IS (Mo), machine (V), duck (W), ingot (Nb), wrong (Zr) At least one selected from the group consisting of, chaotic (Y) and/or wrong (Hf).

[0072] In an embodiment, the first non-magnetic layer may be formed with multiple layers. For example, the first non-magnetic layer 130 may include a first lower metal compound layer 133, a first non-magnetic metal layer 136, and a first upper metal compound layer 139 sequentially stacked on the vertical magnetic layer 123. Although not shown in FIG. 1, the first non-magnetic layer 130 may include a metal compound layer/non-magnetic metal layer and/or a non-magnetic metal layer/metal compound layer sequentially stacked on the vertical magnetic layer 123. The first non-magnetic metal layer 136 may include magnesium (Mg), aluminum (Al), titanium (Ti), Luo (Cr), nail (Ru), copper (Cu), zinc (Zn), (Ta), Gold (Au), silver (Ag), rake (Pd), wrong (Rh), iron (Ir), (Mo), machine (V), pigeon (W), ingot (Nb), wrong (Zr), chaos At least one selected from the group consisting of (Y) and/or wrong (Hf). The first lower metal compound layer 133 and the first upper metal compound layer 139 may be metal oxide, metal nitride, metal oxynitride, and/or a combination thereof. For example, each metal compound layer may be formed of a compound of the metal layer. In contrast, the first non-magnetic layer 130 may include only a single metal layer or multiple metal layers. Through the first lower metal compound layer 133 and the first upper metal compound layer 139, it is possible to prevent and/or reduce the diffusion of metal atoms in the first non-magnetic metal layer 136 into another adjacent layer.

[0073] The first junction magnetic layer 141 may be disposed on the first non-magnetic layer 130. The first junction magnetic layer 141 may include a soft magnetic material. The first junction magnetic layer 141 may have a low damping constant and a high spin polarizability. For example, the first junction metal layer 141 may include at least one selected from the group consisting of cobalt (Co), iron (Fe), and/or nickel (Ni). The first junction magnetic layer 141 may further include materials including boron (B), zinc (Zn), aluminum (A1), titanium (Ti), nail (Ru), (Ta), silicon (Si), silver (Ag), At least one selected from non-magnetic materials of gold (Au), copper (Cu), carbon (C), and/or nitrogen (N). Specifically, the first junction magnetic layer 141 may include CoFe and/or NiFe, and may further include boron (B). In addition, in order to reduce the saturation magnetization of the first junction magnetic layer 141, the first junction magnetic layer 141 may further include titanium (Ti), aluminum (Al), silicon (Si), magnesium (Mg), (Ta) And/or at least one selected from the group consisting of silicon (Si).

[0074] The first non-magnetic layer 130 between the first junction magnetic layer 141 and the first perpendicular magnetic layer 123 can enhance the perpendicular magnetic anisotropy (anisotropy) of the magnetic memory cell including them. For example, the first junction magnetic The layer 141 may be anti-ferromagnetically or ferromagnetically exchange-coupled with the first perpendicular magnetic layer 123 through the first non-magnetic layer 130. Since the first perpendicular magnetic layer 123 has high perpendicular magnetic anisotropy, the perpendicular magnetic anisotropy of the first junction magnetic layer 141 exchange-coupled with the first perpendicular magnetic layer 123 can also be enhanced. The perpendicular magnetic anisotropy herein is defined as the attribute of the layer to be magnetized in the direction perpendicular to the plane of the substrate 100. As used herein, the term vertical can refer to phase

A direction orthogonal to the surface of the substrate 100.

[0075] The crystal structure of the first junction magnetic layer 141 may have a structure different from that of the first perpendicular magnetic layer 123 because the first non-magnetic layer 130 may have a structure different from the crystal structure of the first perpendicular magnetic layer 123. Therefore, the magnetoresistance ratio of the magnetic tunnel junction can be further enhanced. A detailed description about this will be provided with respect to the method for forming the first junction metal layer 141 described later.

[0076] The tunnel barrier 145 may be disposed on the first junction metal layer 141. The tunnel barrier 145 may have a thickness thinner than the spin diffusion distance. The tunnel barrier 145 may include a non-magnetic material. In an embodiment, the tunnel barrier 145 may be formed of an insulating material layer. In contrast, the tunnel barrier 145 may include multiple layers. For example, the tunnel barrier 145 may include oxides of magnesium (Mg), titanium (Ti), aluminum (Al), magnesium-zinc (MgZn) and/or magnesium-boron (MgB), and/or titanium (Ti) ) And/or at least one selected from the group consisting of nitrides of the machine (V). For example, the tunnel barrier may be formed of a magnesium oxide (MgO) layer.

[0077] The tunnel barrier 145 may have a crystal structure similar to that of the first junction magnetic layer 141. For example, the first junction magnetic layer 141 may include a magnetic material having a body-centered cubic (BCC) structure or a magnetic material having a body-centered cubic structure, including non-magnetic elements. When the first junction magnetic layer 141 includes a non-magnetic element, the magnetic material may become amorphous. The tunnel barrier 145 and the first junction magnetic layer 141 may have a NaCl type crystal structure and a body-centered cubic structure, respectively, and the (001) crystal plane of the tunnel barrier 145 may be in contact with the (001) crystal plane of the first junction magnetic layer 141 To form an interface. Thereby, the magnetoresistance ratio of the magnetic tunnel junction including the tunnel barrier 145 and the first junction magnetic layer 141 can be improved.

[0078] The second junction magnetic layer 149 may be disposed at the tunnel barrier 145 ±. The second junction magnetic layer 149 may include a soft magnetic material. For example, the second junction magnetic layer 149 may include cobalt (Co) atoms, iron (Fe) atoms, and/or nickel (Ni) atoms, so that the content of atoms can be determined to reduce the saturation magnetization of the second junction magnetic layer 149. The second junction magnetic layer 149 may have a low damping constant and a high spin polarizability. In order to achieve this, the second junction magnetic layer 149 may further include materials including boron (B), zinc (Zn), aluminum (A1), titanium (Ti), nail (Ru), clamp (Ta), silicon (Si), At least one selected from non-magnetic materials of silver (Ag), gold (Au), copper (Cu), carbon (C), and/or nitrogen (N). For example, the second junction magnetic layer 149 may include CoFe and/or NiFe, and may further include boron. In addition, the first junction magnetic layer 149 may further include at least one selected from non-magnetic elements including titanium (Ti), aluminum (Al), silicon (Si), magnesium (Mg), and/or clamp (Ta). The content of the selected non-magnetic element in the second junction magnetic layer 149 may be in the range of about 1% by atom to about 15% by atom. When the second junction magnetic layer 149 is used as the free layer of the magnetic memory cell, the saturation magnetization of the second junction magnetic layer 149 can be controlled to a value smaller than the saturation magnetization of the first junction magnetic layer 141.

[0079] The second junction magnetic layer 149 may have a crystal structure similar to the tunnel barrier 145. For example, the tunnel barrier 145 and the second junction magnetic layer 149 may have a NaCl type crystal structure and a body-centered cubic structure, and the (001) crystal plane of the tunnel barrier 145 may be the same as the (001) crystal plane of the second junction magnetic layer 149 Contact to form an interface. Thereby, the magnetoresistance ratio of the magnetic tunnel junction including the second junction magnetic layer 149 and the tunnel barrier 145 can be improved.

[0080] In some embodiments, the content of ferromagnetic atoms in the second junction magnetic layer 149 may be different from the content of ferromagnetic atoms in the first junction magnetic layer 141. For example, the first junction magnetic layer 141 and the second junction magnetic layer 149 may include at least one selected from cobalt (Co), nickel (Ni), and/or iron (Fe), and the second junction magnetic layer 149 The iron (Fe) content may be equal to or greater than the iron (Fe) content in the first junction magnetic layer 141. In this case, the second junction magnetic layer 149 may serve as a free layer.

[0081] The second non-magnetic layer 150 may be disposed on the second junction magnetic layer 149. The second non-magnetic layer 150 may be formed with a relatively thin thickness. For example, the second non-magnetic layer 150 may be formed to have a thickness ranging from about 2 angstroms (angstroms) to about

The thickness is within the range of 20A (Angstrom). The second non-magnetic layer 150 may not have texture. For example, the second non-magnetic layer 150 may be uniformly formed on the second junction magnetic layer 149±, and may not have a texture due to a thin thickness.

[0082] The second non-magnetic layer 150 may include at least one selected from non-magnetic metal elements including non-magnetic transition metals. For example, the second non-magnetic layer 150 may include magnesium (Mg), aluminum (Al), titanium (Ti), rim (Cr), nail (Ru), copper (Cu), zinc (Zn), ® (Ta ), gold (Au), silver (Ag), rake (Pd), wrong (Rh), table (Ir), IS (Mo), machine (V), duck (W), ingot (Nb), wrong (Zr) At least one selected from the group consisting of ), random (Y) and/or wrong (Hf).

[0083] In some embodiments, the second non-magnetic layer 150 may be formed with multiple layers. For example, the second non-magnetic layer 150 may include a second lower metal compound layer 153, a second non-magnetic metal layer 156, and a second upper metal compound layer 159 sequentially stacked on the second junction magnetic layer 149. Although not shown in FIG. 1, the second non-magnetic layer 150 may include a metal compound layer/non-magnetic metal layer or a non-magnetic metal layer/metal compound layer sequentially stacked on the second junction magnetic layer 149. The second non-magnetic metal layer 156 may include magnesium (Mg), aluminum (A1), titanium (Ti), Luo (Cr), nail (Ru), copper (Cu), zinc (Zn), pincers (Ta) , Gold (Au), silver (Ag), rake (Pd), wrong (Rh), iron (Ir), aluminum (Mo), machine (V), duck (W), ingot (Nb), wrong (Zr) At least one selected from the group consisting of, Kai (Y) and/or Wrong (Hf). The second lower metal compound layer 153 and the second upper metal compound layer 159 may be metal oxide, metal nitride, metal oxynitride, or a combination thereof. For example, the second lower metal compound layer 153 and the second upper metal compound layer 159 may be formed of the compound of the second non-magnetic metal layer 156. Through the second lower metal compound layer 153 and the second upper metal compound layer 159, the metal in the second non-magnetic metal layer 156 can be prevented and/or reduced. The atoms diffuse into another adjacent layer. In contrast, the second non-magnetic layer 150 may include only a single metal layer or multiple metal layers.

[0084] The second vertical magnetic layer 163 may be disposed on the second non-magnetic layer 150. In some embodiments, the second vertical magnetic layer 163 may include a non-magnetic layer 161 and a ferromagnetic layer 162 that are alternately stacked. The ferromagnetic layer 162 may include iron (Fe), cobalt (Co), and/or Ni (Ni). At least one selected from the group consisting of, and the non-magnetic layer 161 may include from Luo (Cr), pincers (Pt), rake (Pd), iron (Ir), nails (Ru), corrugated (Rh), E At least one selected from the group consisting of (Os), baht (Re), gold (Au) and/or copper (Cu). For example, the second vertical magnetic layer 163 may include [Co/Pt]n, [Co/Pd]n, [Ni/Pt]n (n is the number of stacks per layer and is a natural number of 2 or more) or combination. The ferromagnetic layer 162 may be formed to have a thickness of one to several atoms. The exchange coupling between the second perpendicular magnetic layer 163 and the second junction magnetic layer 149 may be enhanced by the second non-magnetic layer 150. Thereby, the perpendicular magnetic anisotropy of the second junction magnetic layer 149 can be enhanced.

[0085] The stacking number n of the non-magnetic layer 161 and the ferromagnetic layer 162 in the second vertical magnetic layer 163 may be different from the stacking number m of the non-magnetic layer 121 and the ferromagnetic layer 122 in the first vertical magnetic layer 123. For example, the number of stacks of the non-magnetic layer 161 and the ferromagnetic layer 162 in the second vertical magnetic layer 163 may be smaller than the number of stacks of the non-magnetic layer 121 and the ferromagnetic layer 122 in the first vertical magnetic layer 123. In this case, the first junction magnetic layer 141 adjacent to the first vertical magnetic layer 123 may be used as a reference layer of the magnetic memory cell, and the second junction magnetic layer 149 adjacent to the second vertical magnetic layer 163 may be used as a reference layer. As the free layer of the magnetic memory cell. In contrast, the stack number n of the non-magnetic layer 161 and the ferromagnetic layer 162 in the second vertical magnetic layer 163 may be greater than the stack number m of the non-magnetic layer 121 and the ferromagnetic layer 122 in the first vertical magnetic layer 123. In this case, the second junction magnetic layer 141 may serve as a reference layer, and the first junction magnetic layer 149 may serve as a free layer.

[0086] According to the function to be performed, the first junction magnetic layer 141 and the second junction magnetic layer 149 may have different magnetic properties.

Attributes. For example, the junction magnetic layer used as the free layer may have a smaller saturation magnetization than the junction magnetic layer used as the reference layer. The saturation magnetization can be controlled by the ratio of ferromagnetic materials (Co, Ni, and/or Fe) to be included and/or the ratio of non-magnetic materials.

[0087] The first junction magnetic layer 141, the tunnel barrier 145, and the second junction magnetic layer 149 may constitute a magnetic tunnel junction of the magnetic memory cell. Data can be stored in the magnetic memory cell including the magnetic tunnel junction by using the difference between the resistance values of the magnetic tunnel junction when the magnetization directions of the free layer and the reference layer are parallel or antiparallel to each other. The magnetization direction of the free layer may be changed according to the direction of current supplied to the magnetic memory cell. For example, the magnetization direction of the free layer in the case where current is supplied from the first junction magnetic layer 141 to the second junction magnetic layer 149 may be antiparallel to the current supplied from the second junction magnetic layer 149 to the first junction magnetic layer 141. The magnetization direction of the free layer in the case. The magnetization directions of the reference layer and the free layer may be perpendicular to the plane of the substrate 100. The reference layer may be perpendicular to the plane of the substrate 100 and have a fixed first magnetization direction. The free layer has a magnetization direction perpendicular to the plane of the substrate 100, and the magnetization direction of the free layer may be the first magnetization direction or the second magnetization direction antiparallel to the first magnetization according to the direction of the supplied current.

[0088] The capping layer 170 may be disposed on the second vertical magnetic layer 163. The capping layer 170 may include a combination of tongs (Ta), aluminum (A1), copper (Cu), gold (Au), silver (Ag), titanium (Ti), nails (Ru), magnesium (Mg), nitrided metal At least one selected from the group consisting of (TaN) and/or titanium nitride (TiN).

[0089] With reference to FIG. 2, a modified example of a magnetic memory device according to some embodiments of the principles of the invention will be described. For clarity and/or brevity, the description of elements that are substantially the same as those described in FIG. 1 may be omitted.

[0090] The lower electrode 110 may be arranged on the substrate 100±o the seed layer 115 and the first vertical magnetic layer 124 may be arranged on the lower electrode 110. The seed layer 115 may include metal atoms constituting a hexagonal close packed lattice (HCP). The seed layer 115 may be formed to have a thickness ranging from about 10 A (Angstrom) to about 100 A (Angstrom). The seed layer 115 may include nail (Ru) or titanium (Ti). On the contrary, the seed layer 115 may include metal atoms constituting a face centered cubic lattice (FCC). For example, the seed layer 115 may include pincers (Pt), rake (Pd), gold (Au), silver (Ag), copper (Cu), and/or aluminum (Al). The seed layer 115 may include a single layer or multiple layers having different crystal structures. In contrast, when the material constituting the first vertical magnetic layer 124 is amorphous, the seed layer 115 may be omitted.

[0091] The magnetization direction of the first perpendicular magnetic layer 124 may be substantially perpendicular to the plane of the substrate 100 and modified. To achieve this, the first vertical magnetic layer 124 may include from the group consisting of a material having an L10 crystal structure, a material having a hexagonal close-packed (HCP) lattice, and an amorphous rare earth transition metal (RE-TM) alloy Choose at least one. For example, the first vertical magnetic layer 124 may be at least one selected from materials having an L10 crystal structure, the material including Fe₅₀Pt₅₀> Fe₅₀Pd₅₀> Co₅₀Pt₅₀> Co₅₀Pd₅₀ And/or Fe₅₀Ni₅₀o In contrast, the first vertical magnetic layer 124 may include a disordered drill clamp alloy having a clamp content of about 10% to about 45% atomic% or an ordered CogPt alloy having a hexagonal close packed (HCP) lattice. On the contrary, the first perpendicular magnetic layer 124 may include at least one of amorphous RE-TM alloys including iron (Fe), cobalt (Co), and/or nickel (Ni). At least one selected from the group of and at least one selected from the group consisting of rare earth kill (Tb), pick (Dy) and/or rolled (Gd).

[0092] The first non-magnetic layer 130 may be disposed on the first perpendicular magnetic layer 124. The first non-magnetic layer 130 may be formed with a thin thickness. For example, the first non-magnetic layer 130 may be formed to have a thickness in the range of about 2 Angstroms (Angstroms) to about 20 Angstroms (Angstroms). The first non-magnetic layer 130 may not have texture. For example, the first non-magnetic layer 130 may be uniformly formed on the first perpendicular magnetic layer 124, and may not have a texture due to a thin thickness.

[0093] The first non-magnetic layer 130 may include at least one selected from non-magnetic metal elements including non-magnetic transition metals. In an embodiment, the first non-magnetic layer 130 may be formed with multiple layers. For example, the first non-magnetic layer 130 may include a first lower metal compound layer 133, a first non-magnetic metal layer 136, and a first upper metal compound layer 139 sequentially stacked on the vertical magnetic layer 124. Although not shown in FIG. 2, the first non-magnetic layer 130 may include a metal compound layer/non-magnetic metal layer, or a non-magnetic metal layer/metal compound layer sequentially stacked on the first vertical magnetic layer 124. The non-magnetic metal layer may include magnesium (Mg), aluminum (A1), titanium (Ti), rim (Cr), nail (Ru), copper (Cu), zinc (Zn), (Ta), gold (Au) ), silver (Ag), rake (Pd), wrong (Rh), iron (Ir), IS (Mo), machine (V), duck (W), ingot (Nb), wrong (Zr), chaos (Y At least one selected from the group consisting of) and/or wrong (Hf). The first lower metal compound layer 133 and the first upper metal compound layer 139 may be metal oxide, metal nitride, or a combination thereof. For example, the metal compound layer may be a compound of the metal layer. In contrast, the first non-magnetic layer 130 may include only a single metal layer or multiple metal layers.

[0094] The first junction magnetic layer 141, the tunnel barrier 145, and the second junction magnetic layer 149 may be sequentially stacked on the first non-magnetic layer 130. The first junction magnetic layer 141, the tunnel barrier 145, and the second junction magnetic layer 149 may constitute a magnetic tunnel junction. The first junction magnetic layer 141 may perform strong exchange coupling with the first perpendicular magnetic layer 123 through the first non-magnetic layer 130. Thereby, the perpendicular magnetic anisotropy of the first junction magnetic layer 141 can be enhanced. The first junction magnetic layer 141 and the second junction magnetic layer 149 may include soft magnetic materials. When the magnetic memory cell operates, one of the first junction magnetic layer 141 and the second junction magnetic layer 149 may be used as a reference layer, and the other may be used as a free layer. The junction magnetic layer used as the free layer may have a lower saturation magnetization than the junction magnetic layer used as the reference layer.

[0095] The second non-magnetic layer 150 may be disposed on the second junction magnetic layer 149. The second non-magnetic layer 150 may be formed with a thin thickness. For example, the second non-magnetic layer 150 may be formed to have a thickness in the range of about 2 A (Angstrom) to about 20 Angstrom (Angstrom). The second non-magnetic layer 150 may not have texture. For example, the second non-magnetic layer 150 may be uniformly formed on the second junction magnetic layer 149±, and may not have a texture due to a thin thickness.

[0096] The first vertical magnetic layer 163 may be disposed on the first non-magnetic layer 150. The first perpendicular magnetic layer 163 may be configured such that it has a magnetization direction perpendicular to the plane of the substrate 100. For example, the second perpendicular magnetic layer 163 may include a non-magnetic layer 161 and a ferromagnetic layer 162 alternately stacked, and the ferromagnetic layer 162 may be formed with a thickness of one to several atoms. The magnetization direction of the ferromagnetic layer 162 may be perpendicular to the plane of the substrate 100. Through the second non-magnetic layer 150, the second perpendicular magnetic layer 163 may be exchange-coupled with the second junction magnetic layer 149.

[0097] The capping layer 170 may be formed on the second vertical magnetic layer 163. The capping layer 170 may include a combination of tongs (Ta), aluminum (A1), copper (Cu), gold (Au), silver (Ag), titanium (Ti), nails (Ru), magnesium (Mg), nitrided metal At least one selected from the group consisting of (TaN) and/or titanium nitride (TiN).

[0098] With reference to FIG. 3, a modified example of the magnetic storage device according to the embodiment of the principles of the invention will be described. The seed layer 115 and the first vertical magnetic layer 124 are sequentially stacked on the substrate 100 and the lower electrode 110. The seed layer 115 may include a single metal layer and a plurality of metal layers. The first perpendicular magnetic layer 124 may include a material having an axis perpendicular to the plane of the substrate 100 and easily magnetized. The first vertical magnetic layer 124 may include at least one selected from the group consisting of a material having an L10 crystal structure, a material having a hexagonal close packed (HCP) crystal lattice, and an amorphous RE-TM alloy. When the first vertical magnetic layer 124 includes an amorphous RE-TM alloy, the seed layer 115 may be omitted.

[0099] The first non-magnetic layer 130 may be disposed on the first perpendicular magnetic layer 124. The first non-magnetic layer 130 may be formed with a thin thickness. For example, the first non-magnetic layer 130 may be formed to have a thickness in the range of about 2 A (Angstrom) to about 20 Angstrom (Angstrom). The first non-magnetic layer 130 may not have texture.

Π/27 page

[0100] The first non-magnetic layer 130 may include at least one selected from non-magnetic metal elements including non-magnetic transition metals. In an embodiment, the first non-magnetic layer 130 may be formed with multiple layers. For example, the first non-magnetic layer 130 may include a first lower metal compound layer 133, a first non-magnetic metal layer 136, and a first upper metal compound layer 139 sequentially stacked on the vertical magnetic layer 124. Unlike the illustration, the first non-magnetic layer 130 may include a metal compound layer/non-magnetic metal layer or a non-magnetic metal layer/metal compound layer sequentially stacked on the first vertical magnetic layer 124. In contrast, the first non-magnetic layer 130 may include only a single metal layer or multiple metal layers. The first perpendicular magnetic layer 123 may be exchange-coupled with the first junction magnetic layer 141 through the first non-magnetic layer 130.

[0101] The first junction magnetic layer 141, the tunnel barrier 145, and the second junction magnetic layer 149 may be sequentially stacked on the first non-magnetic layer 130. The first junction magnetic layer 141 and the second junction magnetic layer 149 may include soft magnetic materials. When the magnetic memory cell operates, one of the first junction magnetic layer 141 and the second junction magnetic layer 149 may be used as a reference layer, and the other may be used as a free layer. The junction magnetic layer used as the free layer may have a smaller saturation magnetization than the junction magnetic layer used as the reference layer.

[0102] The second non-magnetic layer 150 may be disposed on the second junction magnetic layer 149. The second non-magnetic layer 150 may be formed with a thin thickness. For example, the second non-magnetic layer 150 may be formed to have a thickness in the range of about 2A (Angstrom) to about 20A (Angstrom). The second non-magnetic layer 150 may not have texture.

[0103] The second vertical magnetic layer 164 may be disposed on the second non-magnetic layer 150. The second perpendicular magnetic layer 164 may be configured such that it has a magnetization direction perpendicular to the plane of the first junction magnetic layer 141 and the second junction magnetic layer 149 constituting the magnetic tunnel junction. The second perpendicular magnetic layer 164 may be exchange-coupled with the second junction magnetic layer 149 through the second non-magnetic layer 150. For example, the second vertical magnetic layer 164 may include an amorphous RE-TM alloy. The capping layer 170 may be arranged on the second perpendicular magnetic layer 164 ±.

[0104] With reference to FIGS. 4A and 4C and FIG. 1, a method for forming a magnetic memory device according to an embodiment of the principles of the present invention will be described. Some descriptions with reference to FIG. 1 may be omitted.

[0105] Referring to FIG. 4A, the lower electrode 110 may be formed on the substrate 100±. The lower electrode 110 may be formed on and/or in the substrate 100.

[0106] The non-magnetic layer 121 and the ferromagnetic layer 122 may be alternately stacked on the lower electrode 110. The number of stacking of the non-magnetic layer 121 and the ferromagnetic layer 122 may range from about 2 times to about 20 times. The ferromagnetic layer 122 may be formed with a thickness of one to several atoms. The non-magnetic layer 121 and the ferromagnetic layer 122 may constitute the first perpendicular magnetic layer 123.

[0107] Referring to FIG. 4B, a first lower metal compound layer 133 may be formed on the first vertical magnetic layer 123. A metal layer may be thinly formed on the first vertical magnetic layer 123, followed by oxidation and/or nitridation to form the first lower metal compound layer 133. The metal layer may include at least one selected from, for example, transition metals.

[0108] The first non-magnetic metal layer 136 may be formed on the first lower metal compound layer 133. The first non-magnetic metal layer 136 may include at least one selected from non-magnetic metals such as non-magnetic transition metals. For example, the first non-magnetic metal layer 136 and the first lower metal compound layer 133 may include magnesium (Mg), aluminum (Al), titanium (Ti), Luo (Cr), nail (Ru), copper (Cu) , Zinc (Zn), tongs (Ta), gold (Au), silver (Ag), rake (Pd), wrong (Rh), iron (Ir), aluminum (Mo), machine (V), duck (W) At least one selected from the group consisting of, ingot (Nb), zirconium (Zr), arsenic (Y) and/or zirconium (Hf). The first non-magnetic metal layer 136 may include the same metal as the first lower metal compound layer 133.

[0109] Referring to FIG. 4C, a first upper metal compound layer 139 is formed on the first non-magnetic metal layer 136. The first upper metal compound layer 139 may be formed by oxidizing or nitriding the top surface of the first non-magnetic metal layer 136. for

For oxidation or nitridation, a small amount of oxidizing gas and/or nitriding gas may be provided on the top surface of the first upper metal compound layer 139. Conversely, a separate metal layer may be formed on the first non-magnetic metal layer 136, followed by oxidation and/or nitridation to form the first upper metal compound layer 139, or a separate metal compound layer may be deposited to form the second A metal compound layer 139.

[0110] A first junction magnetic layer 141, a tunnel barrier 145, and a second junction magnetic layer 149 may be sequentially formed on the first upper metal compound layer 139. The first junction magnetic layer 141 and the second junction magnetic layer 149 may include soft Magnetic material. In an embodiment, the first junction magnetic layer 141 and the second junction magnetic layer 149 may include materials having different saturation magnetizations from each other. The first and second junction magnetic layers 149 may be formed in an amorphous state. In an embodiment, a process for oxidizing the top of the first junction magnetic layer 149 may be further included.

[0111] The tunnel barrier 145 may include oxides of magnesium (Mg), titanium (Ti), aluminum (Al), magnesium-zinc (MgZn) and/or magnesium-boron (MgB), and/or titanium ( At least one selected from the group consisting of Ti) and/or organic (V) nitrides. In contrast, the tunnel barrier 145 may include multiple layers. The plurality of layers may be at least two layers selected from the group consisting of a metal layer, a metal oxide layer, a metal nitride layer, and/or a metal oxynitride layer. The tunnel barrier 145 may have a predetermined crystal structure, for example, a NaCl type crystal structure.

[0112] The second junction magnetic layer 149 may be formed on the tunnel barrier 145. When the second junction magnetic layer 149 is used as a free layer of the magnetic memory cell, the second junction magnetic layer 149 may have a smaller saturation magnetization than the first junction magnetic layer 141. Alternatively, the iron (Fe) content of the second junction magnetic layer 149 may be greater than or at least equal to the iron (Fe) content of the first junction magnetic layer 141.

[0113] The top surface of the second junction magnetic layer 149 may be oxidized and/or nitrided. Thereby, a pre-lower metal compound layer 152 can be formed in the top of the second junction magnetic layer 149. The top surface of the second junction magnetic layer 149 may be oxidized and/or nitrided in the same manner as the top surface of the first non-magnetic metal layer 136. On the contrary, the oxidation and/or nitridation process of the second junction magnetic layer 149 may be omitted.

[0114] The first non-magnetic metal layer 156 may be formed on the first junction magnetic layer 149 and the pre-lower metal compound layer 152. The second non-magnetic metal layer 156 may include magnesium (Mg), aluminum (Al), titanium (Ti), Luo (Cr), nail (Ru), copper (Cu), zinc (Zn), (Ta), Gold (Au), silver (Ag), rake (Pd), wrong (Rh), iron (Ir), (Mo), machine (V), (W), ingot (Nb), wrong (Zr), chaos At least one selected from the group consisting of (Y) and/or wrong (Hf).

[0115] Referring again to FIG. 1, a second upper metal compound layer 159 is formed on the second non-magnetic metal layer 156. The second upper metal compound layer 159 may be formed by oxidizing or nitriding the top surface of the second non-magnetic metal layer 156. In order to perform oxidation or nitridation, a small amount of oxidizing gas and/or nitriding gas may be provided on the top surface of the second upper metal compound layer 159. Instead, a separate metal layer may be formed on the second non-magnetic metal layer 156, followed by oxidation and/or nitridation to form the second upper metal compound layer 159, or a separate metal compound layer may be deposited to form the second upper metal compound layer. Metal compound layer 159.

[0116] The non-magnetic layer 161 and the ferromagnetic layer 162 may be alternately stacked on the second upper metal compound layer 159. The ferromagnetic layer 162 may be formed with a thickness of one to several atoms. The non-magnetic layer 161 and the ferromagnetic layer 162 may be included in the second perpendicular magnetic layer 163. The number of stacks of the non-magnetic layer 161 and the ferromagnetic layer 162 in the second vertical magnetic layer 163 may be different from the number of stacks of the non-magnetic layer 121 and the ferromagnetic layer 122 in the first vertical magnetic layer 123.

[0117] Before and/or after forming the second vertical magnetic layer 163, an annealing process may be performed. Through the annealing process, the amorphous first junction magnetic layer 141 and the second junction magnetic layer 149 can be crystallized into the seed layer of the tunnel barrier 145.

The annealing process may be a magnetic annealing process or another annealing process. When the tunnel barrier 145 is used as a seed layer, the tunnel barrier 145 may have a crystal structure similar to the first junction layer 141 and the second junction layer 149. Alternatively, the faces of the first junction layer 141 and the second junction layer 149 that contact the tunnel barrier 145 may have crystal faces equivalent to the faces of the tunnel barrier. For example, when the top and bottom surfaces of the tunnel barrier 145 correspond to the (001) crystal plane of the NaCl type crystal structure, the faces of the first junction magnetic layer 141 and the second junction magnetic layer 149 that contact the tunnel barrier 145 may be solid. (001) crystal plane with centered cubic structure.

[0118] During annealing, the first non-magnetic layer 130 and the second non-magnetic layer 150 may prevent the first junction magnetic layer 141 and the second junction magnetic layer 149 from crystallizing along the crystal structure of a layer different from the tunnel barrier 145. For example, when the first non-magnetic layer 130 and the second non-magnetic layer 150 are omitted, the crystallization of the first junction magnetic layer 141 and the second junction magnetic layer 149 may be affected by the first vertical magnetic layer 123 and the second vertical magnetic layer 163. influences. In this case, the first junction magnetic layer 141 and the second junction magnetic layer 149 may not have the same crystal structure and/or crystal plane as the tunnel barrier 145. When the first junction magnetic layer 141 and the second junction magnetic layer 149 have a crystal structure and/or crystal plane different from the tunnel barrier 145, the resistance ratio of the magnetic tunnel junction including these can be significantly reduced. However, when an embodiment according to the principles of the invention, the first non-magnetic layer 130 and the second non-magnetic layer 150 are inserted between the first perpendicular magnetic layer 123 and the first junction magnetic layer 141 and/or between the second perpendicular magnetic layer When between 163 and the second junction magnetic layer 140, the first vertical magnetic layer 123 and the second vertical magnetic layer 163 may not be used as seed layers for the crystallization of the first junction magnetic layer 141 and the second junction magnetic layer 149.

Therefore, the crystal structure of the first junction magnetic layer 141 and the second junction magnetic layer 149 may be aligned with the crystal structure of the tunnel barrier 145. Therefore, the magnetoresistance ratio of the magnetic tunnel junction including these can be improved.

[0119] The capping layer 170 may be formed on the second vertical magnetic layer 163. The capping layer 170 may include a combination of tongs (Ta), aluminum (A1), copper (Cu), gold (Au), silver (Ag), titanium (Ti), nails (Ru), magnesium (Mg), nitrided metal At least one selected from the group consisting of (TaN) and/or titanium nitride (TiN).

[0120] The first vertical magnetic layer 123, the first non-magnetic layer 130, the first junction magnetic layer 141, the tunnel barrier 145, the second junction magnetic layer 149, the second non-magnetic layer 150, the second vertical magnetic layer 163 and the cover layer 170 are patterned. The patterning may be performed by a process selected from various patterning processes including photolithography and/or electron beam patterning. After all the layers are formed, or after some layers are formed, patterning may be performed. When only some layers are patterned, additional patterning may be performed after forming other layers.

[0121] With reference to FIG. 2, a method for forming a modified example of a magnetic storage device according to an embodiment of the principles of the invention will be described. The description of the method for forming the element described with reference to FIG. 1 is omitted.

[0122] A seed layer 115 may be formed on the substrate 100. The seed layer 115 may include a single metal layer or a plurality of metal layers. The seed layer 115 may include a metal layer having a predetermined crystal structure. For example, the seed layer 115 may have at least one crystal structure selected from the group consisting of a body-centered cubic lattice (BCC), a face-centered cubic lattice (FCC), and a hexagonal close-packed (HCP) lattice.

[0123] The first vertical magnetic layer 124 may be formed on the seed layer 115. The first vertical magnetic layer 124 may be deposited using the seed layer 115 as a seed crystal. The first vertical magnetic layer 124 deposited using the seed layer 115 as a seed crystal may have an HCP or L10 crystal structure. When the first vertical magnetic layer 124 is formed of an amorphous RE-TM alloy, the seed layer 115 may be omitted.

[0124] Referring to FIG. 3, a method for forming a modified example of a magnetic memory device according to an embodiment of the principles of the present invention will be described. The description of the method for forming the element described with reference to FIGS. 1 and 2 is omitted.

[0125] A second vertical magnetic layer 164 is formed on the second non-magnetic layer 150. The second vertical magnetic layer 164 may include, for example, an amorphous RE-TM alloy. Although not shown, the second perpendicular magnetic layer 164 may include a plurality of ferromagnetic layers.

Non-magnetic metal layers may be inserted between ferromagnetic layers. In a range where the ferromagnetic material layer has a perpendicular magnetization direction, the second perpendicular magnetic layer 164 may be modified in various shapes.

[0126] (Second Embodiment)

[0127] With reference to FIG. 5, a magnetic memory device according to a second embodiment of the principles of the present invention will be described.

[0128] The lower electrode 210 is arranged on the substrate 200. The substrate 200 may be a semiconductor-based semiconductor substrate. The substrate 200 may include a conductive area and/or an insulating area. The lower electrode 210 may be electrically connected to the conductive area of the substrate 200. The lower electrode 210 may be arranged on and/or in the substrate 200. The lower electrode 210 may have any one selected from the group consisting of wires, islands, and or plates.

[0129] The pinning layer 226 is disposed on the lower electrode 210. The pinning layer may include an antiferromagnetic material. For example, the pinning layer 226 may include PtMn, IrMn, FeMn, NiMn, MnO, MnS, MnTe, MnF₂> FeF₂> FeCl₂> FeO, CoCl₂> CoO, NiCl₂> At least one selected from the group consisting of NiO and/or Cr. The pinning layer 226 may fix the magnetization direction of the adjacent magnetic layer in one direction.

[0130] A lower reference layer 227 may be provided on the pinning layer 226. The lower reference layer 227 may include a ferromagnetic material. For example, the lower reference layer 227 may include CoFeB, Fe, Co, Ni, Gd, Dy, CoFe, NiFe, MnAs,

MnBi, MnSb, CrO₂> MnOFe₂O₃> FeOFe₂O₃> NiOFe₂O₃> CuOFe₂O₃> At least one selected from the group consisting of EuO and/or YsFesO^. The magnetization direction of the lower reference layer 227 may be fixed to one direction by the pinning layer 226. One direction can be selected from the directions parallel to the plane of the substrate 200. For another example, the lower reference layer 227 may include at least one selected from the group consisting of a material having an L10 crystal structure, a material having HCP, and an amorphous RE-TM alloy. In this case, the magnetization direction of the lower reference layer 227 may be perpendicular (orthogonal) to the plane of the substrate 200.

[0131] The reference exchange coupling layer 228 may be disposed on the lower reference layer 227. The reference exchange coupling layer 228 may include at least one selected from the group consisting of nail (Ru), iron (Ir), Luo (Cr), and/or ergonium (Rh).

[0132] The upper reference layer 241 may be formed on the reference exchange coupling layer 228. The upper reference layer 241 may include iron (Fe). The upper reference layer 241 may include at least one selected from the group consisting of cobalt (Co) and/or nickel (Ni).

The upper reference layer 241 may further include at least one of non-magnetic materials including boron (B), zinc (Zn), aluminum (Al), titanium (Ti), nail (Ru), (Ta) , Silicon (Si), silver (Ag), gold (Au), copper (Cu), carbon (C) and/or nitrogen (N). The upper reference layer 241 and the lower reference layer 227 may be exchange-coupled through the reference exchange coupling layer 228.

[0133] A tunnel barrier 245 may be formed on the upper reference layer 241. The tunnel barrier 245 may include a non-magnetic material.

The tunnel barrier 245 may include oxides of magnesium (Mg), titanium (Ti), aluminum (A1), magnesium-zinc (MgZn) and/or magnesium-boron (MgB), and/or titanium (Ti) and / Or at least one selected from the group consisting of nitrides of the machine (V). For example, the tunnel barrier 245 may be a magnesium oxide (MgO) layer. In contrast, the tunnel barrier 245 may include multiple layers, including a metal layer and a metal compound layer.

[0134] The tunnel barrier 245 may have a crystal structure similar to that of the upper reference layer 241. For example, the tunnel barrier 245 and the upper reference layer 241 may have a NaCl type crystal structure and a body-centered cubic structure, respectively. The interface between the tunnel barrier 245 and the upper reference layer 241 may include the same crystal plane. For example, the (001) crystal plane of the tunnel barrier 245 may include the (001) crystal plane of the upper reference layer 241.

[0135] The lower free layer 249 may be disposed on the tunnel barrier 245. The lower free layer 249 may include iron (Fe). The lower free layer 249 may include at least one selected from the group consisting of cobalt (Co) and/or nickel (Ni). Upper base layer

241 may further include at least one of non-magnetic materials including boron (B), zinc (Zn), aluminum (Al), titanium (Ti), nails (Ru), (Ta), silicon ( Si), silver (Ag), gold (Au), copper (Cu), carbon (C) and/or nitrogen (N).

[0136] The iron (Fe) content in the lower free layer 249 may be higher than the iron (Fe) content in the upper reference layer 241. The reliability of the magnetic memory cell including the upper reference layer 241 and the lower free layer 249 can be enhanced by the high iron content in the lower free layer 249. When the iron content in the reference layer between the reference layer and the free layer constituting the magnetic tunnel junction is high, the magnetic memory cell including the magnetic tunnel junction may show abnormal switching behavior. In one example, the magnetization direction of the free layer including a relatively low iron content may not remain in a direction parallel to the magnetization direction of the reference layer. Therefore, when the magnetic memory cell is switched to a parallel state (a state in which the magnetization direction of the free layer is parallel to the magnetization direction of the reference layer), the magnetization direction of the free layer may be abnormally reversed. Due to these abnormal switching phenomena, the reliability of the magnetic memory cell including the free layer may be reduced. However, according to an embodiment of the principles of the invention, the lower free layer 249 may have a higher iron content than the upper reference layer 241. Therefore, in the operation of switching the magnetic memory cell to the parallel state, the magnetization direction of the lower free layer 249 can be stably maintained in a state parallel to the magnetization direction of the upper reference layer 241. The magnetization direction of the lower free layer 249 may not be abnormally reversed. Therefore, the reliability of the magnetic memory cell including the lower free layer 249 can be enhanced.

[0137] The free exchange coupling layer 265 may be disposed on the lower free layer 249. The free exchange coupling layer 265 may include at least one selected from the group consisting of nail (Ru), iron (Ir), Luo (Cr), and/or ergonium (Rh).

[0138] The upper free layer 266 may be disposed on the free exchange coupling layer 265. The upper free layer 266 may include a ferromagnetic material. For example, the upper free layer 266 may include CoFeB, Fe, Co, Ni, Gd, Dy, CoFe, NiFe> MnAs, MnBi> MnSb, CrO₂> MnOFe₂O₃> FeOFe₂O₃> NiOFe₂O₃> CuOFe₂O₃> EuO and/or Y₃Fe₅O₁₂At least one selected from the group consisting of. When the magnetic memory cell operates, the magnetization direction of the upper free layer 266 may be changed to a first direction or a second direction parallel to the plane of the substrate 200. For another example, the upper free layer 266 may include at least one selected from amorphous RE-TM alloy. In this case, when the magnetic memory cell operates, the magnetization direction of the upper free layer 266 may be changed to the first direction or the second direction perpendicular to the plane of the substrate 200. The upper free layer 266 and the lower free layer 249 can be exchange coupled through the free exchange coupling layer 265.

[0139] The cover layer 270 may be disposed on the upper free layer 266. The capping layer 270 may include from button (Ta), aluminum (Al), copper (Cu), gold (Au), silver (Ag), titanium (Ti), nitriding forceps (TaN) and/or titanium nitride ( TiN) at least one selected from the group consisting of.

[0140] Although not shown, the positions of the lower free layer 249 and the upper free layer 266, and the lower reference layer 227 and the upper reference layer 241 may be changed. For example, the lower free layer 249 and the upper free layer 266 may be arranged below the tunnel barrier 245, and the lower reference layer 227 and the upper reference layer 241 may be arranged above the tunnel barrier 245. In this case, the upper free layer 266, the free exchange coupling layer 265, and the lower free layer 249 may be sequentially stacked between the lower electrode 210 and the tunnel barrier 245, while the tunnel barrier 245 and the capping layer 270 may be sequentially stacked. The upper reference layer 241, the reference exchange coupling layer 228, and the lower reference layer 227 are stacked.

[0141] With reference to FIG. 6, a modified example of the magnetic storage device of the second embodiment according to the principles of the invention will be described. The description of the elements described with reference to FIG. 5 may be omitted.

[0142] The vertical lower reference layer 223 may be disposed on the lower electrode 210±0. The vertical lower reference layer 223 may include a non-magnetic layer 221 and a ferromagnetic layer 222 that are alternately stacked. The ferromagnetic layer 222 may include iron (Fe), cobalt (Co) and/or

At least one selected from the group consisting of nickel (Ni), and the non-magnetic layer 121 may include selected from the group consisting of Luo (Cr), pincers (Pt), rake (Pd), iron (Ir), nails (Ru), and zirconium (Cr), tongs (Pt), rakes (Pd), iron (Ir), nails (Ru), and At least one selected from the group consisting of Rh, Os, Re, Au and/or Cu. For example, the vertical lower reference layer 223 may include [Co/Pt]m>[Co/Pd]m or [Ni/Pt]m (m is the number of stacks per layer and is a natural number of 2 or more). In some embodiments, the non-magnetic layer 221 and the ferromagnetic layer 222 may be stacked about 2 to about 20 times, respectively. When a current flows in a direction perpendicular to the substrate 200 and a plane perpendicular to the lower reference layer 223, the perpendicular lower reference layer 223 may be configured such that it has a magnetization direction parallel to the current. With this configuration, the ferromagnetic layer 222 may be thinly formed with a thickness of one to several atomic layers.

[0143] The vertical upper free layer 263 may be disposed on the lower free layer 249. The vertical upper free layer 263 may include a non-magnetic layer 261 and a ferromagnetic layer 262 alternately stacked. The ferromagnetic layer 262 may include at least one selected from the group consisting of iron (Fe), cobalt (Co), and/or nickel (Ni), and the non-magnetic layer 261 may include the ferromagnetic layer 261 from the group consisting of iron (Fe), cobalt (Co), and/or nickel (Ni). Pt), rake (Pd), iron (Ir), nail (Ru), wrong (Rh), Os, baht (Re), gold (Au) and/or copper (Cu) At least one. For example, the vertical upper free layer 263 may include [Co/Pt]n, [Co/Pd]n, and/or [Ni/Pt]n (n is the number of stacks per layer and is a natural number of 2 or more). In some embodiments, the non-magnetic layer 261 and the ferromagnetic layer 262 may be stacked about 2 to about 20 times, respectively. The stacking number n of the non-magnetic layer 261 and the ferromagnetic layer 262 in the vertical upper free layer 263 may be smaller than the stacking number Π1 of the non-magnetic layer 221 and the ferromagnetic layer 222 in the vertical lower reference layer 223.

[0144] Referring again to FIG. 5, a method for forming a magnetic memory device according to a second embodiment of the principles of the present invention will be described. The lower electrode 210 is formed on the substrate 200 ±. The lower electrode 210 may be formed on and/or in the substrate 200.

[0145] The pinning layer 226 is formed on the lower electrode 210. The pinning layer 226 may include an anti-ferromagnetic material. In some embodiments, a seed layer may be formed as an alternative to the pinned layer 226. The seed layer may include a metal or a metal alloy having a predetermined crystal structure.

[0146] The lower reference layer 227 may be formed on the pinning layer 226. The lower reference layer 227 may include a ferromagnetic material. For example, the lower reference layer 227 may include components made of CoFeB, Fe, Co, Ni, Gd, Dy, CoFe, NiFe, MnAs, MnBi, MnSb, CrO₂> MnOFe₂O₃> FeOFe₂O₃> NiOFe₂O₃> CuOFe₂O₃> EuO and/or Y₃Fe₅O₁₂At least one selected from the group consisting of. For another example, the lower reference layer 227 may include at least one selected from the group consisting of a material having an L10 crystal structure, a material having a hexagonal close packed (HCP) crystal lattice, and an amorphous RE-TM alloy.

[0147] The reference exchange coupling layer 228 may be formed on the lower reference layer 227. The reference exchange coupling layer 228 may include at least one selected from the group consisting of nail (Ru), iron (Ir), Lo (Cr), and/or ergonium (Rh).

[0148] The upper reference layer 241, the tunnel barrier 245, and the lower free layer 249 may be formed on the reference exchange coupling layer 228±. The upper reference layer 241 and the lower free layer 249 may be formed in an amorphous state, and the tunnel barrier 245 may be formed in a NaCl type crystal state. Through the subsequent annealing process, the crystal structure of the upper reference layer 241 and the lower free layer 249 may be aligned with the crystal structure of the tunnel barrier 245.

[0149] A free exchange coupling layer 265 may be formed on the lower free layer 249. The reference exchange coupling layer 228 may include at least one selected from the group consisting of nail (Ru), iron (Ir), Lo (Cr), and/or ergonium (Rh).

[0150] The upper free layer 266 may be formed on the free exchange coupling layer 265. The upper free layer 266 may include a ferromagnetic material. The capping layer 270 may be formed on the upper free layer 266 ±.

[0151] The layers stacked on the lower electrode 210 are patterned. Can be used from various types including photolithography and electron beam

At least one process selected in the patterning process is used to perform the patterning. After all layers are formed, or after some layers are formed, patterning is performed. When only some layers are patterned, additional patterning may be performed after forming other layers.

[0152] With reference to FIG. 6, a method for forming a modified example of the magnetic storage device according to the second embodiment of the principles of the invention will be described. The description of the method for forming the element previously described in FIG. 5 is omitted.

[0153] The non-magnetic layer 221 and the ferromagnetic layer 222 may be alternately stacked on the lower electrode 210. The ferromagnetic layer 222 is deposited with a thickness of 1 to several atoms. The non-magnetic layer 221 and the ferromagnetic layer 222 formed on the lower electrode 210 may constitute the vertical lower reference layer 223.

[0154] The non-magnetic layer 261 and the ferromagnetic layer 262 may be alternately stacked on the lower free layer 249. The ferromagnetic layer 262 is formed to have a thickness of 1 to several atoms. The non-magnetic layer 221 and the ferromagnetic layer 222 formed on the lower free layer 249 may constitute the vertical upper free layer 263.

[0155] The stacking number of the non-magnetic layer 221 and the ferromagnetic layer 222 in the vertical lower reference layer 223 may be greater than the stacking number of the non-magnetic layer 261 and the ferromagnetic layer 262 in the vertical upper free layer 262.

[0156] (Third Embodiment)

[0157] With reference to FIG. 7, a magnetic storage device according to a third embodiment of the principles of the invention will be described. The lower electrode 320 is arranged on the substrate 310. The substrate 310 may be any one selected from various substrates including a semiconductor element-based substrate and a metal compound-based substrate. The substrate 310 may include a conductive area and/or an insulating area. Although the lower electrode 320 is illustrated as being arranged in the substrate 310±, the electrode may be included in the substrate 310. The lower electrode 320 may be an electrode or an electrode contact. The lower electrode 320 may be electrically connected to the conductive area in the substrate 310. For example, the lower electrode 320 may be electrically connected to at least one switching device selected from switching devices including a transistor and a diode in the substrate 310.

[0158] The seed layer 330 is disposed on the substrate 310. The seed layer 330 may include metal atoms constituting a hexagonal close packed (HCP) lattice. As shown in FIG. 9, the HCP may be a lattice including three a-axes, three b-axes forming a hexagonal plane with the a-axis, and a c-axis substantially perpendicular to the hexagonal plane. The hexagonal plane formed by the a-axis and the b-axis may be substantially parallel to the plane of the substrate 310, and the c-axis may be substantially perpendicular to the plane of the substrate 310. The (001) crystal plane constituting the crystal structure of the seed layer 330 may be parallel to the plane of the substrate 310. The seed layer 330 is formed thinly. For example, the seed layer 330 may be formed to have a thickness in the range of about 10 A (Angstrom) to about 100 A (Angstrom). The seed layer 330 may include nail (Ru) or titanium (Ti). On the contrary, the seed layer 330 may include metal atoms constituting a face-centered cubic (FCC) crystal lattice. For example, the seed layer 330 may include pincers (Pt), rake (Pd), gold (Au), silver (Ag), copper (Cu), and/or aluminum (Al).

[0159] The free magnetic substance 340 may be disposed on the seed layer 330. The free magnetic substance 340 may include a vertical free magnetic layer 342 contacting the seed layer 330 and a junction free magnetic layer 348 on the vertical free magnetic layer 342. Unlike the illustration, the vertical free magnetic substance 342 and the junction free magnetic layer 348 may include multiple layers.

[0160] The perpendicular free magnetic layer 342 may include a ferromagnetic material. The atoms included in the vertical free magnetic layer 342 may constitute an HCP lattice. As shown in FIG. 9, the HCP lattice of the perpendicular free magnetic layer 342 may include an a-axis, a b-axis, and a c-axis. The c-axis of the HCP lattice constituting the vertical free magnetic layer 342 may be substantially perpendicular to the plane of the substrate 310. The (001) plane of the HCP lattice constituting the vertical free magnetic layer 342 may be parallel to the plane of the substrate 310. The easy-to-magnetize axis of the perpendicular free magnetic layer 342 may be the c-axis. Therefore, the magnetization direction of the perpendicular free magnetic layer 342 may be perpendicular to the substrate 310. The perpendicular free magnetic layer 342 may have magnetic anisotropy in a direction perpendicular to the plane of the substrate 310.

[0161] The ferromagnetic properties and lattice structure of the vertical free magnetic layer 342 may be caused by the type and/or content of atoms constituting the vertical free magnetic layer 342.

[0162] In some embodiments, the vertical free magnetic layer 342 may include a disordered drill-clamp alloy having a clamp content in a range of about 10% atomic percent to about 45% atomic percent. The content of clamp atoms in the vertical free magnetic layer 342 may be in the range of about 20% by atom to about 30% by atom. The perpendicular free magnetic layer 342 may further include a non-magnetic material. For example, the vertical free magnetic layer 342 may further include at least one selected from the group consisting of boron (B), lo (Cr), and/or copper (Cu).

[0163] In other embodiments, the vertical free magnetic layer 342 may include Co which is an ordered alloy.₃The Pto perpendicular free magnetic layer 342 may further include a non-magnetic material. For example, the vertical free magnetic layer 342 may further include at least one selected from the group consisting of boron (B), lo (Cr), silicon (Si), and/or copper (Cu).

[0164] In other embodiments, the vertical free magnetic layer 342 may be formed in the form of multiple layers. In this case, the vertical free magnetic layer 342 may include a first free ferromagnetic layer having an HCP lattice and a second free ferromagnetic layer on the first free ferromagnetic layer sequentially stacked on the seed layer 330. The first free ferromagnetic layer may be one selected from the previously described embodiments of the vertical free magnetic layer 342, and the second free ferromagnetic layer may be composed of iron (Fe), cobalt (Co) and/or An alloy of at least one selected from the group consisting of nickel (Ni) and at least one selected from rare earth metals. For example, the rare earth metal may be at least one selected from the group consisting of killing (Tb), picking (Dy), and/or rolling (Gd). On the contrary, the second free ferromagnetic layer may be at least one selected from ferromagnetic materials having an L10 crystal structure, the ferromagnetic material including Fe₅₀Pt₅₀> Fe₅₀Pd₅₀> Co₅₀Pt₅₀> Co₅₀Pd₅₀ And/or Fe₅₀Ni₅₀o

[0165] By the crystal structure of the perpendicular free magnetic layer 342, that is, the HCP lattice structure of the perpendicular free magnetic layer 342, the perpendicular free magnetic layer 342 may have high perpendicular magnetic anisotropy. Here, the perpendicular magnetic anisotropy refers to the magnetic anisotropy in the direction perpendicular to the plane of the substrate 310. The reliability of the magnetic memory device including the perpendicular free magnetic layer 342 can be enhanced, and the operating power of the magnetic memory can be reduced by high perpendicular magnetic anisotropy. Specifically, the spin direction of many electrons in the electrons transmitted through the vertical free magnetic layer 342 can be aligned to the direction perpendicular to the plane of the substrate 310 through the vertical free magnetic layer 342. Therefore, many of the electrons transferred through the vertical free magnetic layer 342 can basically be used in the write operation of the magnetic storage device. Therefore, the reliability of the magnetic storage device can be enhanced, and a relatively small amount of switching current can be used to operate the magnetic storage device.

[0166] The lower exchange coupling control layer 344 may be disposed on the vertical free magnetic layer 342. Lower exchange coupling control layer

344 may include a magnetic material having a large exchange coupling constant or a non-magnetic material that can increase surface magnetic anisotropy. For example, the lower exchange coupling control layer 344 may include at least one of iron (Fe), cobalt (Co), and/or nickel (Ni) having a large exchange coupling constant. The lower exchange coupling control layer 344 may further include a clamp (Pt). The thickness of the lower exchange coupling control layer 344 may be in the range of about 2A (Angstrom) to about 20A (Angstrom). The lower exchange coupling control layer 344 can enhance the exchange coupling between the vertical free magnetic layer 342 and the junction free magnetic layer 348 to be described. Because the vertical free magnetic layer 342 has high magnetic anisotropy in the direction perpendicular to the plane of the substrate 310, the junction free magnetic layer 348 exchange-coupled through the vertical free magnetic layer 342 and the lower exchange coupling control layer 344 is perpendicular to the substrate 310. The bottom 310 may also have high magnetic anisotropy in the direction of the plane.

[0167] For another example, the lower exchange coupling control layer 344 may include at least one selected from metal elements including transition metals. The lower exchange coupling control layer 344 may include titanium (Ti), Luo (Cr), nail (Ru), aluminum (Rh), copper (Cu), magnesium (Mg), zinc (Zn), aluminum (A1), At least one selected from the non-magnetic metal of the tongs (Ta), the rake (Pd) and/or the tongs (Pt). Therefore, the lower exchange coupling control layer 344 can increase the verticality of the surface of the adjacent magnetic layer.

Direct magnetic anisotropy.

[0168] In an embodiment, the lower exchange coupling control layer 344 may further include an oxide layer on the surface of the lower exchange coupling control layer 344. The oxide layer may be an oxide of the material constituting the surface of the lower exchange coupling control layer 344.

[0169] The junction free magnetic layer 348 may be disposed on the lower exchange coupling control layer 344. Through the lower exchange coupling control layer 344 and/or the vertical free magnetic layer 342, the junction free magnetic layer 348 may have high vertical anisotropy. For example, the free magnetic layer 348 can be strongly exchange-coupled by the vertical free magnetic layer 342 and the lower exchange coupling control layer 344 having high perpendicular anisotropy. For another example, the perpendicular magnetic anisotropy of the surface of the junction free magnetic layer 348 may be enhanced by the lower exchange coupling control layer 344 including a non-magnetic metal.

[0170] The junction free magnetic layer 348 may include a soft magnetic material. The junction free magnetic layer 348 may have a low damping constant and a high spin polarizability. For example, the junction free magnetic layer 348 may include cobalt (Co) atoms, iron (Fe) atoms, and/or nickel (Ni) atoms. The junction free magnetic layer 348 may further include boron (B), zinc (Zn), aluminum (Al), titanium (Ti), nail (Ru), bare (Ta), silicon (Si), silver (Ag), gold At least one of non-magnetic materials of (Au), copper (Cu), carbon (C), and/or nitrogen (N). Specifically, the junction free magnetic layer 348 may include CoFe and/or NiFe, and may further include boron (B). In order to further reduce the saturation magnetization of the junction free magnetic layer 348, the junction free magnetic layer 348 may further include titanium (Ti), aluminum (Al), silicon (Si), magnesium (Mg), (Ta) and/or At least one selected from the group consisting of silicon (Si). As the saturation magnetization decreases, the switching current of the magnetic memory cell including the junction free magnetic layer 348 can be reduced.

[0171] Although not shown, the junction free magnetic layer 348 may include a plurality of magnetic layers. For example, the junction free magnetic layer 348 may include a first free ferromagnetic layer, a free nonmagnetic layer, and a second free ferromagnetic layer sequentially stacked on the lower exchange coupling magnetic layer 344, that is, a synthetic antiferromagnetic (SAF) layer. The junction free magnetic layer 348 may include various shapes of magnetic layers with variable magnetization directions.

[0172] The magnetization direction of at least one of the layers constituting the free magnetic substance 340 may be changed. For example, the junction free magnetic layer 348 may have a variable magnetization direction. By electrical and/or magnetic factors provided from outside the junction free magnetic layer 348, the magnetization direction of the junction free magnetic layer 348 can be changed to a first direction perpendicular to the substrate 310 or a second direction antiparallel to the first direction. direction.

[0173] The tunnel barrier 350 may be arranged at the free magnetic substance 340 ±. The tunnel barrier 350 may have a thickness thinner than the spin diffusion distance. The tunnel barrier 350 may include a non-magnetic material. In some embodiments, the tunnel barrier 350 may be formed of an insulating material layer. For example, the tunnel barrier 350 may include a mixture of magnesium (Mg)/magnesium oxide (MgO), magnesium oxide (MgO)/magnesium (Mg), and/or magnesium (Mg)/magnesium oxide (MgO)/magnesium (Mg) At least one selected from the group consisting of.

[0174] The reference magnetic substance 360 may be formed on the tunnel barrier 350 ±. The reference magnetic substance 360 may include a junction reference magnetic layer 361, an upper exchange coupling control layer 362, and a vertical reference magnetic layer sequentially stacked on the tunnel barrier 350 363. A plurality of upper reference non-magnetic layers 364 and reference ferromagnetic layers 365 may be alternately stacked on the vertical reference magnetic layer 363.

[0175] The junction reference magnetic layer 361 may include a soft magnetic material. For example, the junction reference magnetic layer 361 includes cobalt (Co), iron (Fe), and/or nickel (Ni), and the content of atoms can be determined so that the saturation magnetization of the junction reference magnetic layer 361 can be reduced. The junction reference magnetic layer 361 may have a low damping constant and a high spin polarizability. To this end, the junction reference magnetic layer 361 may further include boron (B), zinc (Zn), aluminum (Al), titanium (Ti), nail (Ru), clamp (Ta), silicon

At least one of non-magnetic materials of (Si), silver (Ag), gold (Au), copper (Cu), carbon (C), and/or nitrogen (Ν). For example, the junction reference magnetic layer 361 may include CoFe and/or NiFe, and may further include boron. In addition, the junction reference magnetic layer 361 may further include at least one selected from non-magnetic elements including titanium (Ti), aluminum (Al), silicon (Si), magnesium (Mg), and/or clamp (Ta). The content of the selected non-magnetic element in the junction reference magnetic layer 361 may be in the range of about 1% by atom to about 15% by atom.

[0176] The junction free magnetic layer 348, the tunnel barrier 350, and the junction reference magnetic layer 361 may constitute a magnetic tunnel junction. A magnetic memory cell according to an embodiment of the principles of the present invention can be determined by using the difference in resistance values of the two magnetic materials constituting the magnetic tunnel junction, the junction free magnetic layer 348 and the junction reference magnetic layer 361, whose magnetization directions are parallel to each other or antiparallel to each other. Storing data. Specifically, according to the direction of electrons traveling through the magnetic tunnel junction, the magnetization direction of the junction free magnetic layer 348 can be changed.

[0177] For example, when electrons move in the direction from the junction free magnetic layer 348 to the junction reference magnetic layer 361, electrons having spins in the first direction parallel to the magnetization direction of the junction reference magnetic layer 361 can be transported Passing through the junction reference magnetic layer 361, electrons having spins in the second direction antiparallel to the magnetization of the junction reference magnetic layer 361 cannot be transmitted through the junction reference magnetic layer 361 (for example, reflected) and are transferred to the junction freeMagnetosphere348. Magnetic layer 348. By electrons having spins in the second direction, the magnetization direction of the junction free magnetic layer 348 may be the second direction. Therefore, the junction reference magnetic layer 361 and the junction free magnetic layer 348 may have magnetization directions anti-parallel to each other. A magnetic tunnel junction composed of magnetic substances having magnetization directions anti-parallel to each other may have a relatively high resistance value. In this embodiment, the first direction and the second direction may be directions substantially perpendicular (orthogonal) to the plane of the substrate 310.

[0178] For another example, when electrons move from the junction reference magnetic layer 361 to the junction free magnetic layer 348, electrons having spins in the first direction transmitted through the junction reference magnetic layer 361 can reach the junction free magnetic layer. Layer 348. By electrons having spins in the first direction that have reached the junction free magnetic layer 348, the magnetization direction of the junction free magnetic layer 348 can be changed to the first direction. Therefore, the junction reference magnetic layer 361 and the junction free magnetic layer 348 may have the magnetization direction in the first direction. A magnetic tunnel junction composed of magnetic substances having magnetization directions parallel to each other may have a relatively low resistance value.

[0179] In this manner, the resistance value of the magnetic tunnel junction can be changed according to the direction of electrons flowing through the magnetic tunnel junction. By using the difference in resistance value, data can be stored in the magnetic memory cell.

[0180] The upper exchange coupling control layer 362 may be disposed on the junction reference magnetic layer 361. Upper exchange coupling control layer

362 may include a material having a large exchange coupling constant, such as a ferromagnetic metal, or a material such as a non-magnetic metal, which can control the orientation of adjacent magnetic substances. For example, the upper exchange coupling control layer 362 may include at least one selected from the group consisting of iron (Fe), cobalt (Co), and/or nickel (Ni). For another example, the upper exchange coupling control layer 364 may include titanium (Ti), Luo (Cr), nail (Ru), aluminum (Rh), copper (Cu), magnesium (Mg), zinc (Zn), At least one selected from the group consisting of aluminum (Al), (Ta), rake (Pd) and/or tongs (Pt). In some embodiments, the upper exchange coupling control layer 362 may further include an oxide layer on the surface of the upper exchange coupling control layer 362. The oxide layer may be a layer formed by oxidation of some of the upper exchange coupling control layer 362. The function and composition of the upper exchange coupling control layer 362 may be substantially the same as the function and composition of the lower exchange coupling control layer 344.

[0181] The vertical reference magnetic layer 363 may be disposed on the upper exchange coupling control layer 362. The vertical reference magnetic layer 363 may include a ferromagnetic material. The atoms constituting the perpendicular reference magnetic layer 363 may constitute a crystal structure having an easy axis of magnetization substantially perpendicular to the plane of the substrate 310. For example, the vertical reference magnetic layer 363 may include a drill (Co) and/or a clamp (Pt) ordered alloy or a disordered alloy, and the c-axis of the HCP lattice may be perpendicular to the plane of the substrate 310. therefore,

The vertical anisotropy of the vertical reference magnetic layer 363 can be significantly enhanced. The vertical reference magnetic layer 363 may further include at least one selected from the group consisting of boron (B), chamfer (Cr), silicon (Si), and/or copper (Cu).

[0182] The upper reference magnetic layers 364, 365 may be disposed on the upper exchange coupling control layer 363. Upper reference magnetic layer

364 and 365 may include a reference non-magnetic layer 364 and a reference ferromagnetic layer 365 alternately stacked. The reference non-magnetic layer 364 may include at least one selected from the group consisting of iron (Fe), cobalt (Co), and/or silver (Ni), and the reference ferromagnetic layer 365 may include from the group consisting of iron (Cr), Pliers (Pt), Rake (Pd), Iron (Ir), Nail (Ru), Co (Rh), E (Os), Baht (Re), Gold (Au) and/or Copper (Cu) At least one of the choices. For example, the upper reference magnetic layer 364, 365 may include [Co/Pb]n, [Co/Pt]n, or [Ni/Pt]n (n is a natural number of 2 or more). The number of stacking of the reference non-magnetic layer 364 and the reference ferromagnetic layer 365 may range from about 2 times to about 11 times. The reference ferromagnetic layer 365 may be formed with a very thin thickness. For example, the reference ferromagnetic layer 365 may be formed with an atomic layer thickness. The magnetization direction of the reference ferromagnetic layer 365 may be perpendicular to the plane of the substrate 310.

[0183] The upper reference magnetic layers 364, 365 may be arranged in different shapes. For example, the upper reference magnetic layer 364,

365 may include a first reference ferromagnetic layer, a reference non-magnetic layer, and a second reference ferromagnetic layer sequentially stacked on the vertical reference magnetic layer 363, that is, a synthetic antiferromagnetic (SAF) layer.

[0184] The capping layer 370 may be disposed on the upper reference magnetic layers 364, 365. The capping layer 370 may include aluminum (Ta), aluminum (Al), copper (Cu), gold (Au), silver (Ag), titanium (Ti), nitriding forceps (TaN) and/or titanium nitride (TiN). ) At least one selected from the group consisting of.

[0185] With reference to FIGS. 7 and 8, a method for forming a magnetic memory device according to a third embodiment of the principles of the present invention will be described. The description previously described with reference to FIG. 7 may be omitted.

[0186] Referring to FIG. 8, a lower electrode 320 is formed on a substrate 310±. The lower electrode 320 may include a metal or a metal compound.

[0187] The seed layer 330 is formed on the lower electrode 320 ±. The seed layer 330 may include a metal having an HCP lattice or an FCC lattice. For example, the seed layer 330 may comprise from nail (Ru), titanium (Ti), pincers (Pt), rake (Pd), gold (Au), silver (Ag), copper (Cu) and/or aluminum (Al) ) At least one selected from the group consisting of. The seed layer 330 may be formed with a relatively thin thickness. For example, the seed layer 330 may be formed to have a thickness in the range of about 2A (Angstrom) to about 20A (Angstrom).

[0188] A vertical free magnetic layer 342 is formed on the seed layer 330. The crystal structure of the vertical free magnetic layer 342 may be aligned with the crystal structure of the seed layer 330. For example, the vertical free magnetic layer 342 may be formed with an HCP lattice equivalent to the crystal structure of the seed layer 330. The vertical free magnetic layer 342 may include drill (Co) and/or clamp (Pt). The vertical free magnetic layer 342 may include an ordered alloy or a disordered alloy of cobalt (Co) and clamp (Pt).

[0189] The vertical free magnetic layer 342 using the seed layer 330 as a seed growth may be formed by a relatively low temperature process. For example, the vertical free magnetic layer 342 formed by using the seed layer 330 as a seed crystal may be deposited at room temperature.

[0190] In the case of a magnetic storage device in which the magnetization direction of a magnetic substance is perpendicular to the substrate, a magnetic substance having a large perpendicular anisotropy crystal structure, for example, a ferromagnetic substance composed of an L10 ordered alloy is used. In order to form a ferromagnetic substance through an L10 ordered alloy, a plurality of seed layers including a Lo (Cr) seed layer with an FCC crystal lattice and a clamp (Pt) seed layer with a BCC crystal lattice may be required. Multiple layers are formed thicker than a single seed layer. Therefore, it is possible to increase the size of the device including the seed layer. During the patterning process of the seed layer, other magnetic layers and insulating layers may be contaminated due to etching byproducts of the seed layer. Specifically, when the tunnel barrier described later is contaminated due to the etching byproduct of the seed layer, a short-circuit phenomenon may occur on the tunnel barrier to reduce the function of the memory. In addition, use 400°C or more

A high temperature deposition process and/or a high temperature annealing process of 600 Ό or higher can form an L10 ordered alloy.

[0191] In contrast, when the vertical free magnetic layer 342 having an HCP crystal lattice is formed according to an embodiment of the principles of the present invention, the seed layer 330 may be formed as a single layer. Therefore, the thickness of the seed layer 330 may be thinner than the thickness of a plurality of layers. The crystal structure of the vertical free magnetic layer 342 may have a high dependence on the seed layer 330. Therefore, even at a low process temperature, the vertical free magnetic layer 342 of an embodiment according to the principles of the invention may be aligned with the crystal structure of the seed layer 330. That is, a high-temperature deposition process or a high-temperature annealing process may not be necessary.

[0192] The lower exchange coupling control layer 344 may be formed on the vertical free magnetic layer 342. The lower exchange coupling control layer 344 may include a ferromagnetic metal having a large exchange coupling constant, for example, at least one selected from metals including iron (Fe), cobalt (Co), and/or nickel (Ni). On the contrary, the lower exchange coupling control layer 344 may include a non-magnetic material that can enhance the surface magnetic anisotropy of adjacent magnetic substances or control the crystal orientation of the magnetic substance to be formed on the lower exchange coupling control layer 344. For example, the lower exchange coupling control layer 344 may include titanium (Ti), Luo (Cr), nail (Ru), aluminum (Rh), copper (Cu), magnesium (Mg), zinc (Zn), aluminum (Al) ), at least one selected from the group consisting of tongs (Ta), rake (Pd) and/or tongs (Pt). In some embodiments, the surface of the lower exchange coupling control layer 344 may be oxidized. The process for oxidation may include injecting a very small amount of oxygen into a chamber before forming the lower exchange coupling control layer 344, in which a product in which the vertical free magnetic layer 342 has been formed is loaded; or by forming an atomic layer thickness The lower exchange coupling control layer 344 is then formed by injecting a very small amount of oxygen into the chamber to form an oxide layer, and then the remaining lower exchange coupling control layer 344 is formed.

[0193] The junction free magnetic layer 348 may be formed on the lower exchange coupling control layer 344. Through the vertical free magnetic layer 342 and/or the lower exchange coupling control layer 344, the vertical anisotropy of the junction free magnetic layer 348 can be enhanced. Specifically, the crystal structure of the lower exchange coupling control layer 344 can prevent and/or reduce the crystallization of the junction free magnetic layer 348 into the crystal structure of the vertical free magnetic layer 342. For example, when the lower exchange coupling control layer 344 is omitted, the junction free magnetic layer 348 formed in an amorphous state may be crystallized into the crystal structure of the vertical free magnetic layer 342 through a heating process. In this case, by the crystal structure of the perpendicular free magnetic layer 342, that is, the (011) crystal plane other than the (001) crystal plane of the BCC structure, the crystal structure of the junction free magnetic layer 348 can be aligned, and then the crystal structure of the junction free magnetic layer 348 can be reduced. The small includes the magnetoresistance ratio of the magnetic tunnel junction of the junction free magnetic layer 348. However, because the vertical free magnetic layer 342 is separated from the junction free magnetic layer 348 by the lower exchange coupling control layer 344, the crystal structure of the junction free magnetic layer 348 may not be aligned with the crystal structure of the vertical free magnetic layer 342. Therefore, the magnetoresistance ratio of the magnetic tunnel junction can be enhanced.

[0194] Referring again to FIG. 7, a tunnel barrier 350 may be formed on the junction free magnetic layer 348. The tunnel barrier may include oxides of magnesium (Mg), titanium (Ti), aluminum (Al), magnesium-zinc (MgZn) and/or magnesium-boron (MgB), and/or titanium (Ti) and/ Or at least one selected from the group consisting of nitride (V). For example, the tunnel barrier 350 may be a magnesium oxide (MgO) layer. In contrast, the tunnel barrier 350 may include multiple layers. For example, the tunnel barrier may include magnesium (Mg)/magnesium oxide (MgO), magnesium oxide (MgO)/magnesium (Mg), and/or magnesium (Mg)/magnesium oxide (MgO)/magnesium (Mg). The tunnel barrier 350 may be formed by depositing a metal oxide or metal nitride on the junction free magnetic layer 348; or forming a metal layer on the junction free magnetic layer 348, and then oxidizing the metal layer. In an embodiment, the tunnel barrier 350 may have a predetermined crystal structure. For example, the tunnel barrier 350 may have a NaCl type crystal structure (face-centered cubic lattice structure).

[0195] The junction reference magnetic layer 361 may be formed on the tunnel barrier 350. The junction reference magnetic layer 361 may have a relatively low saturation magnetization. The junction reference magnetic layer 361 may include a soft magnetic material. The junction reference magnetic layer 361 may further include a non-magnetic material. The junction reference magnetic layer 361 may have the same magnetic properties as the junction free magnetic layer 348

Magnetic properties. In contrast, the junction reference magnetic layer 361 may have magnetic properties different from those of the junction free magnetic layer 348. For example, the product of the thickness of the junction reference magnetic layer 361 and the saturation magnetization of the junction reference magnetic layer 361 may be greater than the product of the thickness of the junction free magnetic layer 348 and the saturation magnetization of the junction free magnetic layer 348.

[0196] The crystal structure of the junction reference magnetic layer 361 may be aligned with the tunnel barrier 350. For example, when the tunnel barrier 350 is formed of magnesium oxide (MgO) having a (001) crystal plane of the NaCK face-centered three-dimensional lattice structure parallel to the plane of the substrate 310, the junction reference magnetic layer 361 may be in contact with the tunnel barrier The crystal structure of 350 is aligned. Therefore, the perpendicular magnetic anisotropy of the junction reference magnetic layer 361 can be enhanced. The crystallization of the junction reference magnetic layer 361 may be performed through a heating process.

[0197] The upper exchange coupling control layer 362 may be formed on the junction reference magnetic layer 361. Upper exchange coupling control layer

362 may include a magnetic material having a large exchange coupling constant. Therefore, the exchange coupling between the vertical reference magnetic layer 363 and the magnetic junction reference magnetic layer 361 can be enhanced to increase the perpendicular magnetic anisotropy of the junction reference magnetic layer 361. The upper exchange coupling control layer 362 may be used as a seed layer, and may be aligned so that the easy magnetization axis of the vertical reference magnetic layer 363 is perpendicular to the plane of the substrate 310. In some embodiments, the surface of the upper exchange coupling control layer 362 may be oxidized. The process for oxidation may include injecting a very small amount of oxygen into a chamber before forming the upper exchange coupling control layer 362, in which a product in which the upper junction reference magnetic layer 361 has been formed is loaded; or by forming an atomic layer thickness Then, a very small amount of oxygen is injected into the upper exchange coupling control layer 362 to form an oxide layer, and then the remaining upper exchange coupling control layer 362 is formed.

[0198] A vertical reference magnetic layer 363 may be formed on the junction reference magnetic layer 361. The vertical reference magnetic layer 363 may be an amorphous ferromagnetic layer. For example, the vertical reference magnetic layer 363 may be formed of amorphous cobalt (Co) and/or clamp (Pt) alloy. The vertical reference magnetic layer 363 may include at least one selected from the group consisting of boron (B), lo (Cr), silicon (Si), and/or copper (Cu).

[0199] Upper reference magnetic layers 364, 365 may be formed on the vertical reference magnetic layer 363. The reference non-magnetic layer 365 and the reference ferromagnetic layer 365 may be alternately stacked multiple times to form the upper reference magnetic layers 364, 365. The reference ferromagnetic layer 365 can be formed with a very thin thickness. For example, the reference ferromagnetic layer 365 may be formed with an atomic layer thickness.

[0200] The upper reference magnetic layers 364, 365 may be formed in various forms. For example, the upper reference magnetic layers 364, 365 may include a first reference ferromagnetic layer, a reference non-magnetic layer, and a second reference ferromagnetic layer sequentially stacked on the vertical reference magnetic layer 363, that is, a synthetic antiferromagnetic (SAF) layer .

[0201] When the vertical reference magnetic layer 363 and/or the upper exchange coupling control layer 362 are inserted between the reference non-magnetic layer 364 and the junction reference magnetic layer 361, the magnetic properties of the magnetic tunnel junction including the junction reference magnetic layer 361 can be enhanced. Resistance ratio. Specifically, when the reference non-magnetic layer 364 is directly formed on the junction reference magnetic layer 361, during the heating process, the metal constituting the reference non-magnetic layer 364 may react with the material constituting the reference magnetic layer 361 to form non-magnetic properties.Layer. The layer. The layer having no magnetic properties significantly reduces the magnetoresistance ratio of the magnetic tunnel junction.

[0202] In some embodiments, the junction reference magnetic layer 361 may be thinly formed with a thickness equal to or less than a predetermined critical thickness. In this case, the junction reference magnetic layer 361 may be consumed by reacting with the reference non-magnetic layer 364 so as to reduce the magnetoresistance ratio. On the contrary, since the vertical reference magnetic layer 363 and/or the upper exchange coupling control layer 362 are formed between the vertical reference magnetic layer 361 and the reference non-magnetic layer 364 according to the embodiment of the principle of the invention, a layer without magnetic properties may not be formed. Therefore, the junction reference magnetic layer 361 is not consumed unnecessarily. Therefore, the magnetoresistance ratio of the magnetic tunnel junction including the junction reference magnetic layer 361 can be enhanced.

[0203] The capping layer 370 may be formed on the upper reference magnetic layers 364, 365. The capping layer 370 may include from (Ta), aluminum (Al), copper (Cu), gold (Au), silver (Ag), titanium (Ti), nitriding forceps (TaN), and/or titanium nitride

At least one selected from the group consisting of (TiN).

[0204] The layers stacked on the substrate 310 ± can be patterned. The patterning is performed after stacking all the layers from the lower electrode 310 to the capping layer 370, or the patterning of some layers may be performed before stacking other layers. The patterning may be performed using an ion beam process and/or a photolithography process. Patterning may include performing an anisotropic etching process.

[0205] (Fourth Embodiment)

[0206] With reference to FIG. 10, a magnetic memory device according to a fourth embodiment of the principles of the invention will be described. The lower electrode 420 is arranged on the substrate 410. The substrate 410 may include a conductive area and/or an insulating area. The lower electrode 420 may be electrically connected to the conductive area in the substrate 410.

[0207] The seed layer 430 is disposed on the lower electrode 420 ±. The seed layer 430 may include metal atoms constituting the HCP lattice. The HCP c axis may be substantially perpendicular to the plane of the substrate 410.

[0208] The reference magnetic substance 440 may be disposed on the seed layer 430. The reference magnetic substance 440 may include a vertical reference magnetic layer 442, a lower exchange coupling control layer 444, and/or a junction reference magnetic layer 448 sequentially stacked on the seed layer 430.

[0209] The vertical reference magnetic layer 442 may include a ferromagnetic material. The vertical reference magnetic layer 442 may have an easy axis of magnetization in a direction perpendicular to the substrate 410. For example, the vertical reference magnetic layer 442 may include a hexagonal close packed (HCP) crystal lattice. As shown in FIG. 9, the hexagonal close-packed (HCP) lattice of the vertical reference magnetic layer 442 may include an a-axis, a b-axis, and a c-axis. The c-axis of the HCP lattice constituting the vertical reference magnetic layer 442 may be substantially parallel to the c-axis constituting the seed layer 430. The c-axis of the HCP lattice constituting the vertical reference magnetic layer 442 may be substantially perpendicular to the plane of the substrate 410. The easy magnetization axis of the perpendicular reference magnetic layer 442 may be the c axis. Therefore, the magnetization direction of the perpendicular reference magnetic layer 442 may be perpendicular to the substrate 410.

[0210] In one embodiment, the vertical reference magnetic layer 442 may include a drill-clamp (CoPt) disordered alloy having a clamp content in a range of about 10% by atom to about 45% by atom. The clamp atom content of the vertical reference magnetic layer 442 may be in the range of about 20% by atom to about 30% by atom. The vertical reference magnetic layer 442 may further include a non-magnetic material. For example, the vertical reference magnetic layer 442 may further include at least one selected from the group consisting of boron (B), lo (Cr), and/or copper (Cu).

[0211] In another embodiment, the vertical reference magnetic layer 442 may include Co which is an ordered alloy.₃The Pto perpendicular reference magnetic layer 442 may further include a non-magnetic material. For example, the vertical reference magnetic layer 442 may further include at least one selected from the group consisting of boron (B), lo (Cr), and/or copper (Cu).

[0212] In still another embodiment, the vertical reference magnetic layer 442 may include a plurality of layers. In this case, the vertical reference magnetic layer 442 may include a first reference ferromagnetic layer having an HCP crystal lattice that is sequentially stacked on the seed layer 430 and a second reference ferromagnetic layer on the first reference ferromagnetic layer. The first reference ferromagnetic layer may be one selected from the various embodiments of the aforementioned vertical reference magnetic layer 442, and the second reference ferromagnetic layer may be composed of iron (Fe), cobalt (Co) and/or nickel. An alloy of at least one selected from the group consisting of (Ni) and at least one selected from rare earth metals. For example, the rare earth metal may be at least one selected from the group consisting of Tb, Dy, and/or Gd. On the contrary, the second reference ferromagnetic layer may be at least one selected from ferromagnetic materials having an L10 crystal structure, the ferromagnetic material including Fe₅₀Pt₅₀> Fe₅₀Pd₅₀> Co₅₀Pt₅₀> Co₅₀Pd₅₀> And/or Fe₅₀Ni₅₀o With the HCP structure of the vertical reference magnetic layer 442, the vertical reference magnetic layer 442 may have high vertical anisotropy. Therefore, the resistance diffusion and switching current properties of the magnetic memory device including the vertical reference magnetic layer 442 can be improved.

[0213] The lower exchange coupling control layer 444 may be disposed on the vertical reference magnetic layer 442. Lower exchange coupling control layer

444 may include a magnetic material having a large exchange coupling constant or a non-magnetic material that may increase surface magnetic anisotropy. For example, the lower exchange coupling control layer 444 may include at least one from iron (Fe), cobalt (Co), and/or nickel (Ni) having a large exchange coupling constant. The lower exchange coupling control layer 444 may further include a clamp (Pt). The thickness of the lower exchange coupling control layer 444 may be in the range of about 2A (Angstrom) to about 20A (Angstrom). The lower exchange coupling control layer 444 can enhance the exchange coupling between the vertical reference magnetic layer 442 and the junction reference magnetic layer 448 which will be described later. Since the vertical reference magnetic layer 442 has high vertical anisotropy as described above, the junction reference magnetic layer 448 exchange-coupled through the vertical reference magnetic layer 442 and the lower exchange coupling control layer 444 may also have high vertical anisotropy.

[0214] For another example, the lower exchange coupling control layer 444 may include titanium (Ti), Luo (Cr), nail (Ru), aluminum (Rh), copper (Cu), magnesium (Mg), zinc ( At least one of non-magnetic metals selected from Zn), aluminum (A1), tongs (Ta), rake (Pd) and/or tongs (Pt). The non-magnetic metal can control the orientation of the crystal structure of the adjacent magnetic layer. In some embodiments, the lower swap coupling control layer 444 may further include an oxide layer on the surface of the lower swap coupling control layer 444. The oxide layer may be a layer that oxidizes the surface of the lower exchange coupling control layer 444. Through the lower exchange coupling control layer 444, the surface magnetic anisotropy of the adjacent magnetic layer can be enhanced.

[0215] A tunnel barrier 450 may be formed on the junction reference magnetic layer 448. The tunnel barrier 450 may include oxides of magnesium (Mg), titanium (Ti), aluminum (Al), magnesium-zinc (MgZn) and/or magnesium boron (MgB), and/or titanium (Ti) and/ Or at least one selected from the group consisting of nitride (V). The tunnel barrier 450 may include multiple layers. For example, the tunnel barrier 450 may include magnesium (Mg)/magnesium oxide (MgO), magnesium oxide (MgO)/magnesium (Mg), and/or magnesium (Mg)/magnesium oxide (MgO)/magnesium (Mg).

[0216] The free magnetic substance 460 may be arranged on the tunnel barrier 450. The free magnetic substance 460 may include a junction free magnetic layer 461 contacting the tunnel barrier 450, an exchange coupling control layer 463 on the junction free magnetic layer 461, and an upper free magnetic layer 466 on the upper exchange coupling control layer 463.

[0217] The junction free magnetic layer 461 may include a soft magnetic material. The junction free magnetic layer 461 may have low saturation magnetization. The junction free magnetic layer 461 may also have a low damping constant and a high spin polarizability. The junction free magnetic layer 461 may include at least one selected from the group consisting of cobalt (Co), iron (Fe), and/or nickel (Ni). The junction free magnetic layer 461 may further include boron (B), zinc (Zn), aluminum (Al), titanium (Ti), nail (Ru), pincers (Ta), silicon (Si), silver (Ag), gold At least one of non-magnetic materials of (Au), copper (Cu), carbon (C), and/or nitrogen (N).

[0218] For example, the junction free magnetic layer 461 may include CoFe and/or NiFe, and may further include boron (B). In addition, the junction free magnetic layer 461 may further include at least one of non-magnetic materials including titanium (Ti), aluminum (Al), silicon (Si), magnesium (Mg), and/or clamp (Ta). The content of the selected non-magnetic element in the junction free magnetic layer 461 may be in the range of about 1 atomic percent to about 15 atomic percent.

[0219] The upper exchange coupling control layer 463 may be disposed on the junction free magnetic layer 461. The upper exchange coupling control layer 463 may include a material having a large exchange coupling constant, for example, a ferromagnetic material, or a material that can increase the orientation and perpendicular anisotropy of adjacent magnetic substances, for example, a non-magnetic metal. For example, the upper exchange coupling control layer 463 may include at least one selected from the group consisting of iron (Fe), cobalt (Co), and/or nickel (Ni). For another example, the upper exchange coupling control layer 463 may include titanium (Ti), Luo (Cr), nail (Ru), copper (Cu), magnesium (Mg), zinc (Zn), aluminum (A1), At least one selected from the group consisting of button (Ta), rake (Pd) and/or pliers (Pt). In some embodiments, the upper exchange coupling control layer 463 may further include an oxide layer contacting the upper exchange coupling control layer 463. The oxide layer may be some oxidation of the upper exchange coupling control layer 463.

[0220] The upper free magnetic layer 466 may include a single magnetic layer or a plurality of magnetic layers. For example, the upper free magnetic layer 466

It may include a first free ferromagnetic layer, a free nonmagnetic layer, and a second free ferromagnetic layer sequentially stacked on the upper exchange coupling control layer 463, that is, a synthetic antiferromagnetic (SAF) layer. The upper free magnetic layer 466 may include various shapes of magnetic layers with variable magnetization directions.

[0221] The cover layer 470 may be disposed on the upper free magnetic layer 466 ±. The cover layer may include from button (Ta), aluminum (Al), copper (Cu), gold (Au), silver (Ag), titanium ( At least one selected from the group consisting of Ti), Nitride (TaN), and/or Titanium Nitride (TiN).

[0222] Referring to FIG. 10, a method for forming a magnetic memory device according to a fourth embodiment of the principles of the invention will be described. For the sake of brevity, further discussion of the previously described elements may be omitted.

[0223] Referring again to FIG. 10, a lower electrode 420 and a seed layer 430 are formed on the substrate 410. The seed layer 430 may include a metal having an HCP crystal lattice or an FCC crystal lattice. For example, the seed layer 430 may include from nail (Ru), titanium (Ti), pincers (Pt), rake (Pd), gold (Au), silver (Ag), copper (Cu) and/or aluminum (Al) ) At least one selected from the group consisting of. The seed layer 430 may be formed with a relatively thin thickness. For example, the seed layer 430 may be formed to have a thickness in the range of about 10 A (Angstrom) to about 100 A (Angstrom).

[0224] A vertical reference magnetic layer 442 is formed on the seed layer 430. The vertical reference magnetic layer 442 may include a material having a large dependency on the seed layer 430. For example, the crystal structure of the vertical reference magnetic layer 442 may be aligned with the crystal structure of the seed layer 430. For example, the vertical reference magnetic layer 442 may be grown along the c-axis of the seed layer 430. Therefore, the vertical reference magnetic layer 442 grown by using the seed layer 430 as a seed crystal may be formed through a relatively low temperature process.

[0225] For example, the vertical reference magnetic layer 442 may include a drill (Co) and/or a clamp (Pt). The vertical reference magnetic layer 442 may include an ordered alloy or a disordered alloy according to the content of cobalt (Co) and clamp (Pt). For example, the vertical reference magnetic layer 442 formed using the seed layer 330 as a seed crystal may be deposited at room temperature.

[0226] A lower exchange coupling control layer 444 may be formed on the vertical magnetic layer 442. The lower exchange coupling control layer 444 may include a ferromagnetic material having a large exchange coupling constant, for example, at least one selected from metals including iron (Fe), cobalt (Co), and nickel (Ni). On the contrary, the lower exchange coupling control layer 444 can increase the surface magnetic anisotropy of the adjacent magnetic substance. For example, the lower exchange coupling control layer 444 may include a non-magnetic material, for example, a non-magnetic metal element or a transition metal. The lower exchange coupling control layer 444 is composed of titanium (Ti), Luo (Cr), nails (Ru), aluminum (Rh), copper (Cu), magnesium (Mg), zinc (Zn), aluminum (Al), At least one selected from the group consisting of (Ta), rake (Pd) and/or tongs (Pt).

[0227] In some embodiments, the surface of the lower exchange coupling control layer 444 may be oxidized. The process for oxidation may include injecting a very small amount of oxygen into a chamber before forming the lower exchange coupling control layer 444, in which a product in which the vertical magnetic layer 442 has been formed is loaded, or by forming a lower exchange coupling control layer 444 with a thickness After the exchange coupling control layer 444, a very small amount of oxygen is injected into the chamber to form an oxide layer, and then the remaining lower exchange coupling control layer 444 is formed.

[0228] A junction reference magnetic layer 448 may be formed on the lower exchange coupling control layer 444. Pass the vertical reference magnetic layer

442 and/or the lower exchange coupling control layer 444 can enhance the vertical anisotropy of the junction reference magnetic layer 448.

[0229] A tunnel barrier 450 is formed on the junction reference magnetic layer 448. The tunnel barrier 450 may include oxides of magnesium (Mg), titanium (Ti), aluminum (Al), magnesium-zinc (MgZn) and/or magnesium-boron (MgB), and/or titanium (Ti) and / Or at least one selected from the group consisting of nitrides of the machine (V). In contrast, the tunnel barrier 450 may include multiple layers. For example, the tunnel barrier 450 may include magnesium (Mg)/magnesium oxide (MgO), magnesium oxide (MgO)/magnesium (Mg), and/or magnesium (Mg)/magnesium oxide (MgO)/magnesium (Mg). In an embodiment, the tunnel barrier 450 may have a NaCl type structure

(Body-centered cubic lattice structure). For example, the tunnel barrier 450 may include magnesium oxide (MgO).

[0230] A junction free magnetic layer 461 is formed on the tunnel barrier 450. The junction free magnetic layer 461 may have a relatively low saturation magnetization. The junction free magnetic layer 461 may further include a non-magnetic material. The junction free magnetic layer 461 may be formed in an amorphous state.

[0231] The upper exchange coupling control layer 463 may be formed on the junction free magnetic layer 461. In an embodiment, the junction free magnetic layer 461 may include a magnetic material having a large exchange coupling constant. Therefore, when the exchange coupling between the junction free magnetic layer 461 and the upper reference magnetic layer 466 described later increases, the perpendicular anisotropy of the junction free magnetic layer 461 increases. Specifically, when the upper exchange coupling control layer is formed on the junction free magnetic layer 461, the crystal structure of the junction free magnetic layer 461 will not crystallize into the crystal structure of the upper free magnetic layer 466 described later, but can be compared with the tunnel potential. The crystal structure of barrier 450 is aligned. When the junction free magnetic layer 461 is aligned with the crystal structure of the tunnel barrier 450, the magnetoresistance ratio of the magnetic tunnel junction including the junction free magnetic layer 461 may be enhanced. In an embodiment, the interface between the upper exchange coupling control layer 463 and the junction free magnetic layer 461 may be oxidized. The oxidation process can be performed by injecting a very small amount of oxygen into the chamber after forming the upper junction free magnetic layer 461, and loading the product on which the upper junction free magnetic layer 461 has been formed in the chamber; or, after forming an atomic layer thickness After the exchange coupling control layer 463, a very small amount of oxygen is injected into the chamber to form an oxide, and then the remaining exchange coupling control layer 463 is formed.

[0232] The upper free magnetic layer 466 may be formed on the upper exchange coupling control layer 463. The upper free magnetic layer 466 may include a single layer having a ferromagnetic material, or include multiple layers having the single layer. In an embodiment, the upper free magnetization layer 466 may include a ferromagnetic layer-antiferromagnetic layer-ferromagnetic layer structure.

[0233] The capping layer 470 may be formed on the upper exchange coupling control layer 463. The capping layer 470 may include aluminum (Ta), aluminum (Al), copper (Cu), gold (Au), silver (Ag), titanium (Ti), nitriding forceps (TaN) and/or titanium nitride (TiN). ) At least one selected from the group consisting of.

[0234] According to some embodiments of the principles of the invention, when a non-magnetic layer is inserted between the perpendicular magnetic layer and the junction magnetic layer, the magnetoresistance ratio and perpendicular magnetization properties of the magnetic tunnel junction including the junction magnetic layer can be improved. In addition, during the operation of the magnetic storage device, the switching properties can be improved by the free magnetic layer and the reference magnetic layer having different iron contents, respectively. Therefore, the reliability of the magnetic storage device can be improved.

[0235] According to other embodiments of the principles of the invention, the magnetic layer can have a hexagonal close-packed (HCP) lattice having an axis perpendicular to the plane of the substrate 100 and easy to magnetize. Therefore, the spin direction of the electrons can be arranged in the vertical direction with respect to the substrate. Therefore, the magnetoresistance ratio of the magnetic tunnel junction can be improved. In addition, the switching current of the magnetic memory device including the magnetic tunnel junction can be reduced.

[0236] The subject matter disclosed above is to be regarded as illustrative rather than restrictive, and it is hoped that the appended claims will cover all such modifications, improvements and others that fall within the true spirit and scope of the principles of the invention disclosed herein Examples. Therefore, to the greatest extent permitted by law, the broadest permissible interpretation of the appended claims and their equivalents will determine the scope of the principles of the present invention, and should not be restricted or limited by the foregoing detailed description.