Method and apparatus for an improved bellows shield in a plasma processing system
Abstract
The present invention provides an improved bellows cover for a plasma processing system, in which the design and manufacture of the bellows cover coupled to a base base electrode substantially minimizes the erosion of the bellows cover, which is advantageous to the bellows Provided protection.

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Expired 29 September 2023, 3 years ago.
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58 claims: 6 independent, 52 dependent
- 1第 1. 一种改进的波纹管罩,用于保护在等离子体加工系统的基底 座上的波纹管,其包括: 具有内表面、外表面、第一端和第二端的柱形壁,其中所述第一 端包括附加凸缘,所述附加凸缘包括结合到所述柱形壁的所述内表面 并用于与所述基底座配合的内部表面、结合到所述内部表面的内径表 面以及结合到所述外表面和所述内径表面的外部表面,其中所述柱形 壁的所述第二端包括端表面;以及 结合到所述波纹管罩的多个暴露表面的保护层,其中所述多个暴 露表面包括所述第二端的所述端表面、所述柱形壁的所述外表面、以 及所述第一端的所述附加凸缘的所述外部表面,其中所述内表面包括 阳极氧化层。
- 2如权利要求1所述的改进的波纹管罩,其中,所述附加凸缘 还包括多个紧固件接收器,它们结合到所述附加凸缘的所述内部表面 和所述外部表面并用于接收紧固器件从而将所述波纹管罩连接到所述 基底座上。
- 3如权利要求2所述的改进的波纹管罩,其中,所述多个紧固 件接收器中的每一个都包括进口腔、出口通孔以及内接收表面。
- 4如权利要求1所述的改进的波纹管罩,其中,所述改进的波 纹管罩包括金属。
- 5如权利要求1所述的改进的波纹管罩,其中,所述内部表面 还包括配合表面,该配合表面在其上不包括所述阳极氧化层并且在其 上不包括所述保护层。
- 6如权利要求1所述的改进的波纹管罩,其中,所述保护层包 括含有元素周期表第III列中的元素和锅系元素中的至少一种的化合 物。
- 7如权利要求6所述的改进的波纹管罩,其中,所述元素周期 表第III列中的元素包括军乙、铳和镇I中的至少一种。 03822376.7 第
- 8如权利要求6所述的改进的波纹管罩,其中,所述毓系元素 包括钵、鋪和铺中的至少一种。
- 9如权利要求1所述的改进的波纹管罩,其中,所述保护层包 括 Y2O3、Sc 2 O 3 > SC2F3、YF3、La 2 O 3 . CeO2、Eu 2 O 3 和 DyCh 中的至 少一种。
- 10如权利要求1所述的改进的波纹管罩,其中,所述保护层包 括具有最小厚度的热喷涂层,并且所述最小厚度为横过所述暴露表面 中的至少一个上的常数。
- 11如权利要求1所述的改进的波纹管罩,其中,所述保护层包 括具有可变厚度的热喷涂层,所述可变厚度的范围从0.5到500微米。
- 12如权利要求1所述的改进的波纹管罩,其中,所述柱形壁具 有至少两毫米的最小厚度。
- 13如权利要求1所述的改进的波纹管罩,其中,所述内径表面 包括至少200毫米的最小直径。
- 14一种波纹管罩,用于保护在等离子体加工系统的基底座上的 波纹管,其包括: 柱形元件,其包括内表面、外表面、结合到所述内表面并用于与 所述基底座配合的内部表面、结合到所述内部表面的内径表面、结合 到所述外表面和所述内径表面的外部表面、以及结合到所述内表面和 所述外表面的端表面;以及 结合到所述波纹管罩的多个暴露表面的保护层,其中所述多个暴 露表面包括所述端表面、所述外表面和所述外部表面,其中所述内表 面包括阳极氧化层。
- 15如权利要求14所述的波纹管罩,还包括多个紧固件接收器, 它们结合到所述内部表面和所述外部表面并用于接收紧固器件从而将 所述波纹管罩结合到所述基底座。
- 16如权利要求15所述的波纹管罩,其中,所述多个紧固件接收 器中的每一个都包括进口腔、出口通孔以及内接收表面。
- 17如权利要求14所述的波纹管罩,所述内部表面还包括配合表 03822376.7 第 面。 1& 如权利要求17所述的波纹管罩,还包括多个紧固件接收器, 它们结合到所述配合表面和所述外部表面并用于接收紧固器件,从而 将所述波纹管罩结合到所述基底座。
- 1819. 如权利要求14所述的波纹管罩,所述外部表面还包括安装表 面。
- 1920. 如权利要求19所述的波纹管罩,还包括多个紧固件接收器, 它们结合到所述安装表面和所述内部表面并用于接收紧固器件,从而 将所述波纹管罩结合到所述基底座。
- 2021. 如权利要求14所述的波纹管罩,还包括金属。
- 2122. 如权利要求21所述的波纹管罩,其中,所述金属包括铝。
- 2223. 如权利要求14所述的波纹管罩,其中,所述内径表面包括大 于200mm的直径。
- 2324. 如权利要求14所述的波纹管罩,其中,所述保护层包括含有 元素周期表第III列中的元素和铜系元素中的至少一种的化合物。
- 2425. 如权利要求24所述的波纹管罩,其中,所述元素周期表第 III列中的元素包括铭、铳和镉中的至少一种。
- 2526. 如权利要求24所述的波纹管罩,其中,所述镉系元素包括钵、 鏑和鋪中的至少一种。
- 2627. 如权利要求14所述的波纹管罩,其中,所述保护层包括Y2O3、 Sc 2 O 3 > Sc 2 F 3 > YF 3 > La 2 O 3 ' CeO 2 > Eu 2 O 3 和 DyC>3 中的至少一种。
- 2728. 如权利要求14所述的波纹管罩,所述内部表面还包括配合表 面,该配合表面在其上不包括所述阳极氧化层并且在其上不包括所述 保护层。
- 2829. 如权利要求14所述的波纹管罩,其中,所述阳极氧化层包括 AI2O3。
- 2930. 如权利要求14所述的波纹管罩,所述内部表面还包括阳极氧 化层。
- 3031. —种制作包围等离子体加工系统中的波纹管的波纹管罩的方 03822376.7 第 法,所述方法包括以下步骤: 制作所述波纹管罩,所述波纹管罩包括柱形元件,其具有内表面、 外表面、结合到所述内表面并用于与所述等离子体加工系统中的基底 座配合的内部表面、结合到所述内部表面的内径表面、结合到所述外 表面和所述内径表面的外部表面、以及结合到所述内表面和所述外表 面的端表面;和 在暴露表面上形成保护层,所述暴露表面包括所述端表面、所述 外表面和所述外部表面; 其中所述内表面包括阳极氧化层。
- 3132. 如权利要求31所述的方法,所述方法还包括: 阳极氧化所述波纹管罩以在所述波纹管罩上形成表面阳极氧化 层;并且 去除所述暴露表面上的所述表面阳极氧化层。
- 3233. 如权利要求32所述的方法,其中,所述去除步骤包括机械加 工。
- 3334. 如权利要求31所述的方法,所述方法还包括: 掩模所述波纹管罩上的所述暴露表面以防止形成表面阳极氧化 层; 阳极氧化所述波纹管罩以在所述波纹管罩的未掩模表面上形成表 面阳极氧化层;以及 将所述暴露表面去掩模。
- 3435. 如权利要求31所述的方法,其中,所述制作步骤包括涂覆、 掩模、去掩模、铸造、磨光、锻造和抛光中的至少之一。
- 3536. 如权利要求31所述的方法,其中,所述制作步骤包括机械加 工。
- 3637. 如权利要求31所述的方法,其中,所述形成步骤包括喷涂、 加热和冷却中的至少之一。 3& 如权利要求31所述的方法,所述方法还包括精加工所述保护 03822376.7 第
- 3739. 如权利要求31所述的方法,其中,所述波纹管罩还包括多个 紧固件接收器,它们结合到所述内部表面和所述外部表面并用于接收 紧固器件,从而将所述波纹管罩结合到所述基底座。
- 3840. 如权利要求39所述的方法,其中,所述多个紧固件接收器中 的每一个都包括进口腔、出口通孔以及内接收表面。
- 3941. 如权利要求31所述的方法,所述内部表面还包括配合表面。
- 4042. 如权利要求31所述的方法,所述外部表面还包括安装表面。
- 4143. 如权利要求31所述的方法,所述波纹管罩包括金属。
- 4244. 如权利要求41所述的方法,其中,所述配合表面在其上不包 括所述保护层并且在其上不包括所述阳极氧化层。
- 4345. 如权利要求31所述的方法,其中,所述暴露表面还包括所述 内径表面。
- 4446. 如权利要求31所述的方法,其中,所述保护层包括含有元素 周期表第III列中的元素和锢系元素中的至少一种的化合物。
- 4547. 如权利要求46所述的方法,其中,所述元素周期表第III列 中的元素包括军乙、铳和镉中的至少一种。
- 4648. 如权利要求46所述的方法,其中,所述鋪系元素包括钵、鏑 和鋪中的至少一种。
- 4749. 如权利要求31所述的方法,其中,所述保护层包括Y2O3、 Sc 2 O 3 > SC2F3、YF3、La 2 O 3 ^ CeO 2 > Eu 2 O 3 和 DyCh 中的至少一种。
- 4850. 如权利要求31所述的方法,其中,所述保护层包括最小厚度, 并且所述最小厚度为横过所述暴露表面中的至少一个上的常数。
- 4951. 如权利要求31所述的方法,其中,所述保护层包括可变厚度 并且所述可变厚度的范围从0.5到500微米。
- 5052. 一种制作能够结合到等离子体加工系统的基底座的改进的波 纹管罩的方法,所述方法包括以下步骤: 制作所述波纹管罩,所述波纹管罩包括具有内表面、外表面、第 一端和第二端的柱形壁,其中所述第一端包括附加凸缘,所述附加凸 缘包括结合到所述柱形壁的所述内表面并用于与所述基底座配合的内 03822376.7 第 部表面、结合到所述内部表面的内径表面以及结合到所述柱形壁的所 述外表面和所述内径表面的外部表面,其中所述柱形壁的所述第二端 包括端表面; 阳极氧化所述波纹管罩以在包括所述内表面的所述波纹管罩上形 成表面阳极氧化层; 机械加工所述波纹管罩上的暴露表面以除去所述表面阳极氧化 层,所述暴露表面包括所述柱形壁的所述端表面、所述柱形壁的所述 外表面以及所述附加凸缘的所述外部表面,其中所述内表面包括阳极 氧化层;以及 在暴露表面上形成保护层。
- 5153. 如权利要求52所述的方法,其中,所述附加凸缘还包括多个 紧固件接收器,它们结合到所述附加凸缘的所述内部表面和所述外部 表面并用于接收紧固器件,从而将所述波纹管罩结合到所述基底座。
- 5254. 如权利要求52所述的方法,其中,所述保护层包括含有元素 周期表第III列中的元素和铜系元素中的至少一种的化合物。
- 5355. 如权利要求52所述的方法,其中,所述保护层包括Y2O3、 Sc 2 O 3 . SC2F3、YF3、La 2 O 3 . CeO 2 > Eu 2 O 3 和 DyCh 中的至少一种。
- 5456. —种制作能够结合到等离子体加工系统的基底座的改进的波 纹管罩的方法,所述方法包括以下步骤: 制作所述波纹管罩,所述波纹管罩包括具有内表面、外表面、第 一端和第二端的柱形壁,其中所述柱形壁的所述第一端包括附加凸缘, 所述附加凸缘包括结合到所述柱形壁的所述内表面并用于与所述基底 座配合的内部表面、内径表面以及结合到所述柱形壁的所述外表面的 外部表面,其中所述柱形壁的所述第二端包括端表面; 掩模所述波纹管罩上的暴露表面以防止形成表面阳极氧化层,所 述暴露表面包括所述柱形壁的所述端表面、所述柱形壁的所述外表面 以及结合到所述柱形壁的所述附加凸缘的所述外部表面; 阳极氧化所述波纹管罩以在所述波纹管罩上形成所述表面阳极氧 化层,所述内表面包括阳极氧化层; 03822376.7 第 将暴露表面去掩模;以及 在暴露表面上形成保护层。 57.如权利要求56所述的方法,其中,所述附加凸缘还包括多个 紧固件接收器,它们结合到所述附加凸缘的所述内部表面和所述外部 表面并用于接收紧固器件,从而将所述波纹管罩结合到所述基底座。 5& 如权利要求57所述的方法,其中,所述多个紧固件接收器中 的每一个都包括进口腔、出口通孔以及内接收表面。
- 5559. 如权利要求58所述的方法,还包括掩模所述内接收表面。
- 5660. 如权利要求56所述的方法,其中,所述保护层包括含有元素 周期表第III列中的元素和镉系元素中的至少一种的化合物。
- 5761. 如权利要求55所述的方法,其中,所述保护层包括Y2O3、 Sc 2 O 3 > SC2F3、YF3、La 2 O 3 , CeO 2 . Eu 2 O 3 和 DyCh 中的至少一种。
- 5862. 一种制作能够结合到等离子体加工系统的基底座的改进的波 纹管罩的方法,所述方法包括以下步骤: 制作所述波纹管罩,所述波纹管罩包括具有内表面、外表面、第 一端和第二端的柱形壁,其中所述柱形壁的所述第一端包括附加凸缘, 所述附加凸缘包括结合到所述柱形壁的所述内表面的内部表面,所述 内部表面具有用于与所述基底座配合的配合表面,附加凸缘还包括内 径表面以及结合到所述柱形壁的所述外表面的外部表面,其中所述柱 形壁的所述第二端可包括端表面; 掩模所述波纹管罩上的暴露表面以防止形成表面阳极氧化层,所 述暴露表面包括所述柱形壁的所述端表面、所述柱形壁的所述外表面 以及结合到所述柱形壁的所述附加凸缘的所述外部表面; 阳极氧化所述波纹管罩以在所述波纹管罩上形成所述表面阳极氧 化层,其中所述内表面包括阳极氧化层; 将所述暴露表面去掩模; 机械加工所述附加凸缘的所述内部表面的所述配合表面;以及 在暴露表面上形成保护层。 03822376.7
Independent claims58
54 paragraphs, as filed
The first method and apparatus for an improved bellows cover in a plasma processing system CROSS-REFERENCE TO RELATED APPLICATIONS This application relates to an improved upper electrode with a deposition cover for use in a plasma processing system filed on the same date Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system, a co-pending US patent application with agent number 226272US6YA and serial number 10/XXX,XXX; on the same date The submitted name is "Method and apparatus for an improved baffle plate in a plasma processing system (Method and apparatus for an improved baffle plate in a plasma processing system). The agent number is 226274US6YA. The serial number is 10/XXX, XXX common U.S. patent application pending; filed on the same date entitled "Method and apparatus for an improved baffle plate in a plasma processing system" in a plasma processing system )", attorney number 228411US6YA, serial number 10/XXX, XXX co-pending US patent application; filed on the same date under the title "Improved deposition hood for plasma processing system Method and apparatus for an improved deposition shield in a plasma processing system", the agent number is 226275US6YA> The co-pending US patent application with serial number 10/XXX,XXX; the name filed on the same date is "Method and apparatus for an improved optical window deposition shield in a plasma processing system, agent number is 226276US6YA, serial number is 10/XXX,XXX The co-pending US patent application; filed on the same date entitled "Method and Device for Improved Upper Electrode Plate in Plasma Processing System" apparatus for an improved upper electrode plate in a plasma processing system ), agent number is 225277US6YA, serial number is 10/XXX,XXX. The co-pending U.S. patent application.
03822376.7 The entire contents of these applications are hereby incorporated as a reference.
TECHNICAL FIELD The present invention relates to an improved component used in a plasma processing system, and more specifically to a bellows shield used in a plasma processing system to protect bellows.
BACKGROUND In the semiconductor industry, the manufacture of integrated circuits (IC) generally uses plasma to generate and participate in surface chemistry in a plasma reactor, which is necessary for removing materials on a substrate and depositing materials on the substrate. Generally, the supplied process gas is used to heat electrons to impart sufficient energy to sustain ion collisions to form plasma in a plasma reactor under vacuum conditions. Moreover, the heated electrons can have enough energy to maintain separate collisions, so that a specific series of gases under predetermined conditions (such as chamber pressure, airflow velocity, etc.) can be selected to generate a large amount of gas suitable for special processing in the room (such as Etching process to remove material from the substrate or deposition process to add material to the substrate) charging type and chemical reaction type.
Although the formation of a large number of charging types (ions, etc.) and chemical reaction types is necessary to perform the functions of the plasma processing system (ie, material etching, material deposition, etc.) on the substrate surface, the inside of the processing chamber is exposed to physical and The surface of other parts of the chemical plasma may be corroded in time. The erosion of the exposed parts in these plasma processing systems will cause the gradual degradation of the plasma processing performance and ultimately complete the system's failure.
In order to minimize the damage sustained due to exposure to the processing plasma, the components of the known plasma processing system that maintain exposure to the processing plasma are coated with a protective layer. For example, parts made of aluminum can be anodized to produce a surface layer of aluminum oxide that is more resistant to plasma. In another example, consumable or replaceable parts, such as parts made of silicon, quartz, alumina, carbon, or silicon carbide, can be inserted into the processing chamber to protect the surface of more valuable parts. Frequent replacement will consume more costs. In addition, it is desirable to select such a surface material that can minimize the introduction of unwanted inclusions, impurities, etc. into the processing plasma and possible introduction of devices formed on the substrate.
03822376.7 In these examples, the inevitable failure of the protective coating is either due to the integrity of the protective layer or the integrity of the protective layer, and the consumable properties of the replaceable components require the plasma processing system Perform frequent maintenance. This frequent maintenance will incur a lot of costs, which involve plasma processing downtime and expensive new plasma processing chamber components.
SUMMARY OF THE INVENTION The present invention provides an improved bellows cover for a plasma processing system, wherein the design and manufacture of the bellows cover are beneficial to overcome the above-mentioned drawbacks.
An object of the present invention is to provide a bellows cover that can be incorporated into the base of a plasma processing system. The plasma processing system includes a cylindrical wall having an inner surface, an outer surface, a first end, and a second end. The first end of the cylindrical wall may include an additional flange, wherein the additional flange includes an inner surface coupled to the inner surface of the cylindrical wall and for mating with the base base, and the additional flange further includes an inner diameter surface and an outer surface coupled to the cylindrical wall. The external surface of the surface. The second end of the cylindrical wall may include an end surface.
The additional flange of the bellows cover may also include a plurality of fastener receivers for receiving fastening devices to couple the bellows cover to the base base. Each fastener receiver may include an inlet cavity, an outlet through hole, and an inner receiving surface.
The bellows cover may further include a protective layer formed on a plurality of exposed surfaces of the bellows cover facing the processing plasma.
Another object of the present invention is that the plurality of exposed surfaces of the bellows cover includes the end surface of the cylindrical wall, the outer surface of the cylindrical wall, and the outer surface of the additional flange adjacent to the outer surface of the cylindrical wall.
The present invention provides a method for manufacturing a bellows cover in a plasma processing system, including the following steps: manufacturing a bellows cover; anodizing the bellows cover to form a surface anodized layer on the bellows cover; and machining the bellows cover To remove the surface anodized layer on the exposed surface; and form a protective layer on the exposed surface.
The present invention can also optionally include machining other parts that are not actually exposed to plasma. These parts can be machined to provide freedom from contact with the anodized layer (for example, to provide better mechanical or electrical contact). These parts can include but are not limited to: additional
03822376.7 The inner surface of the flange and the inner receiving surface of multiple fastener receivers.
The present invention provides another method for manufacturing a bellows cover in a plasma processing system, including the following steps: manufacturing a bellows cover, masking the exposed surface of the bellows cover to prevent the formation of surface anodized layer; anodizing the bellows Cover to form a surface anodized layer on the bellows cover; and form a protective layer on the exposed surface.
The present invention can also optionally include other parts of the mask that are not actually exposed to the plasma. These parts can be masked to provide protection from contact with the anodized layer (for example, to provide better mechanical or electrical contact). These parts may include, but are not limited to: the inner surface of the additional flange and the inner receiving surface of the plurality of fastener receivers.
The present invention also provides a method of combining machining and masking in order to provide a bare exposed surface on which a protective layer can be formed.
BRIEF DESCRIPTION OF THE DRAWINGS Through the following detailed description of the exemplary embodiments of the present invention in conjunction with the accompanying drawings, these and other advantages of the present invention will become more obvious and easier to understand, in which: Figure 1 shows an embodiment according to the present invention A simplified block diagram of a plasma processing system for a bellows cover; Figure 2 shows a cross-sectional view of a bellows cover for a plasma processing system according to an embodiment of the present invention; A partial plan view of a bellows cover for a plasma processing system; Figure 4 shows an exploded view of an additional flange of a bellows cover for a plasma processing system according to an embodiment of the present invention; Figure 5 shows one according to the present invention An exploded view of the end surface on the second end of the bellows cover for the plasma processing system of the embodiment; FIG. 6 shows a method for manufacturing the bellows cover for the plasma processing system according to an embodiment of the present invention; Fig. 7 shows a method for manufacturing a bellows cover for a plasma processing system according to another embodiment of the present invention; Fig. 8 shows a method for manufacturing a bellows cover for a plasma processing system according to another embodiment of the present invention
03822376.7 The first method of bellows cover.
DETAILED DESCRIPTION According to an embodiment of the present invention, the plasma processing system 1 depicted in FIG. 1 includes a plasma processing chamber 10, an upper device 20, an electrode plate 24, a base 30 for supporting a substrate 35, and a vacuum pump ( Not shown) a pump pipe 40 connected to provide the atmosphere 11 with a reduced pressure in the plasma processing chamber 10. The plasma processing chamber 10 can facilitate the formation of processing plasma in the processing chamber 12 adjacent to the substrate 35. The plasma processing system 1 can be used to process substrates of various sizes (for example, 200 mm substrates, 300 mm substrates or larger substrates).
In the illustrated embodiment, the upper device 20 may include at least one of a cover, a gas injection device, and an upper electrode impedance matching network. For example, the electrode plate 24 may be connected to an RF source. In another alternative embodiment, the upper device 20 includes a cover and an electrode plate 24, wherein the electric potential of the electrode plate 24 is maintained at a potential equal to that of the plasma processing chamber 10. For example, the plasma processing chamber 10, the upper device 20, and the electrode plate 24 may be electrically connected to the ground potential.
The plasma processing chamber 10 may further include, for example, a deposition cover 14 for protecting the plasma processing chamber 10 from contact with the processing plasma in the processing room 12 and an optical viewport 16. The optical viewport 16 may include an optical window 17 connected to the back side of the optical window deposition cover 18 and an optical window edge 19 that may be used to connect the optical window 17 to the optical window deposition cover 18. Sealing elements, such as O-rings, may be provided between the optical window edge 19 and the optical window 17, between the optical window 17 and the optical window deposition cover 18, and between the optical window deposition cover 18 and the plasma processing chamber 10. The optical viewport 16 may, for example, allow monitoring of the light emission from the processing plasma in the processing room 12.
The base base 30 may also include, for example, a vertical transfer device 50 surrounded by a bellows 52 connected to the base base 30 and the plasma processing chamber 10, and the base base 30 is used to seal the vertical transfer device 50 from contacting the plasma processing chamber 10. The pressure of the atmosphere is reduced 11. In addition, the bellows cover 54 may also be connected to the base base 30 and used to protect the bellows 52 from contact with plasma, for example. The base base 10 may also be connected to at least one of the focus ring 60 and the cover ring 62, for example. Also, the baffle 64 may extend around the periphery of the base base 30.
The substrate 35 can pass through the machine, for example, through a slot valve (not shown) and a chamber feedthrough (not shown)
03822376.7 The first substrate transfer system is transferred into and out of the plasma processing chamber 10. In the robotic substrate transfer system, the substrate 35 is received by the substrate lifting rod (not shown) packaged in the substrate base 30 and transferred by the device packaged in it. Mechanical transmission. Once the substrate 35 is received from the substrate transfer system, it is lowered onto the upper surface of the base base 30.
The base 35 can be fixed to the base base 30, for example, by an electrostatic adsorption system. Moreover, the base base 30 may also include a cooling system, for example, the cooling system including a recirculating coolant flow that receives heat from the base base 30 and transfers the heat to a heat exchange system (not shown) or transfers heat from the heat exchange system when heated. Moreover, the gas may be transferred to the back surface of the substrate 35, for example, through a backside gas system, thereby improving the air gap heat conduction between the substrate 35 and the substrate base 30. Such a system can be used when temperature control of the substrate at an increased or decreased temperature is required. In other embodiments, heating elements, such as resistance heating elements or thermoelectric heaters/refrigerators, may also be included.
In the embodiment shown in FIG. 1, the base 30 may include an electrode through which the RF power source is connected to the processing plasma in the processing room 12. For example, the base base 30 can be electrically biased by the RF voltage transferred from the RF power from an RF generator (not shown) to the base base 30 through an impedance matching network (not shown). The RF bias can be used to heat electrons to form and maintain plasma. In this configuration, the system can operate as a reactive ion etching (RIE) reactor, where the chamber and upper gas injection electrodes are used as the ground surface. The typical frequency for the RF bias can range from 1 MHz to 100 MHz and is preferably 13.56 MHz. RF systems for plasma processing are well known to those of ordinary skill in the art.
Alternatively, a parallel plate, a capacitively coupled plasma (CCP) source, an inductively coupled plasma (ICP) source, any combination thereof, and a DC magnetic system may be used to form the processing plasma formed in the processing room 12. Alternatively, electron cyclotron resonance (ECR) may be used to form the processing plasma in the processing chamber 12. In another embodiment, the processing plasma in the processing chamber 12 may be formed by the emission of Helicoη waves. In another embodiment, the processing plasma in the processing chamber 12 may be formed by the propagation of surface waves.
Now referring to the schematic embodiment of the present invention shown in Figure 2 (cross-sectional view) and Figure 3 (partial plan view), the bellows cover 54 includes a cylindrical wall 80, and the cylindrical wall 80 includes an inner surface 82 and an outer surface.
03822376.7 First face 84, first end 86 and second end 88. The first end 86 of the cylindrical wall 80 includes an additional flange 90 coupled to the cylindrical wall 80 and used to connect the bellows cover 54 to the base base 30, and a through hole 92 that accommodates the upper surface of the base base 30<sub>o</sub>The second end 88 of the cylindrical wall 80 includes an end surface 94.
FIG. 4 provides an enlarged view of the additional flange 90 that is bonded to the cylindrical wall 80 and used to bond the bellows cover 54 to the base base 30. The additional flange 90 includes an inner surface 96, an inner diameter surface 97 and an outer surface 98. In addition, the inner surface 96 may include a mating surface 99 and the outer surface may include a mounting surface 91 for bonding the bellows cover 54 to the base base 30.
In addition, the additional flange 90 may, for example, include a plurality of fastener receivers 100, each of which is coupled to the inner surface 96 and the outer surface 98 and is used to receive a fastening device (not shown) (such as a screw). ) Thus, the bellows cover 54 is bonded to the base base 30. The fastener receiver 100 may include an inlet cavity 102, an outlet through hole 104 and an inner receiving surface 106. For example, the number of fastener receivers 100 formed in the bellows cover 54 may range from 0 to 100. Ideally, the number of fastener receivers 100 can range from 5 to 20; and the number of fastener receivers 100 is preferably at least 6.
FIG. 5 provides an enlarged view of the end surface 94 forming the second end 88 of the cylindrical wall 80.
Referring now to FIGS. 2 to 5, the bellows cover 54 further includes a protective layer 150 formed on the plurality of exposed surfaces 110 of the bellows cover 54. In one embodiment of the present invention, the plurality of exposed surfaces 110 may include an end surface 94 of the cylindrical wall 80, an outer surface 84 of the cylindrical wall 80, and an additional flange 90 adjacent to the outer surface 84 of the cylindrical wall 80. Alternatively, the exposed surface 110 may also include all remaining surfaces on the bellows cover 54.
In an embodiment of the present invention, the protective layer 150 may include a compound containing aluminum oxide such as AI2O3. In another embodiment of the present invention, the protective layer 150 may include AI2O3 and dagger. 3 mixtures. In another embodiment of the present invention, the protective layer 150 may include at least one of column III elements (column III of the periodic table) and copper-based elements. In another embodiment of the present invention, the column III element may include at least one of epoxide, bludgeon, and copper. In another embodiment of the present invention, the tie element may include at least one of a pot, a dysprosium, and an anchor. In another embodiment of the present invention, the compound forming the protective layer 150 may include oxyhydrogen (Y2O3), SC2O3,
03822376.7 p.
Sc<sub>2</sub>F<sub>3</sub>. YF3, La<sub>2</sub>O<sub>3</sub>> CeO<sub>2</sub>> Eu<sub>2</sub>O<sub>3</sub> And at least one of DyCh.
In one embodiment of the present invention, the protective layer 150 formed on the bellows cover 54 has a minimum thickness, where the minimum thickness may be specified as a constant across at least one of the plurality of exposed surfaces 110. In another embodiment, the minimum thickness may be a variable across at least one of the plurality of exposed surfaces 110. Alternatively, the minimum thickness may be a constant on the first portion of at least one of the plurality of exposed surfaces 110 and a variable on the second portion of at least one of the plurality of exposed surfaces 110 (that is, the variable thickness may appear on the curved surface, On the corner or in the hole). For example, the minimum thickness can range from 0.5 microns to 500 microns. Ideally, the minimum thickness ranges from 100 micrometers to 200 micrometers; and the minimum thickness is preferably at least 20 micrometers.
Fig. 6 shows a method of producing the bellows cover in the plasma processing system shown in Fig. 1 according to an embodiment of the present invention. The flowchart 300 begins with step 310 of making the bellows cover 54 (described above). The step of manufacturing the bellows cover may include at least one of machining, casting, polishing, forging, and polishing. For example, each of the above-mentioned components can be machined by using traditional techniques including guns, cars, etc. in accordance with the instructions listed on the mechanical drawing. Techniques for machining parts using, for example, guns or cars are well known to those of ordinary skill in the machining field. The bellows cover 54 may be made of aluminum, for example.
In step 320, the bellows cover is anodized to form a surface anodized layer. For example, when the bellows cover is made of aluminum, the surface anodized layer includes aluminum oxide (AI2O3). The method of anodizing aluminum parts is well known to those of ordinary skill in the field of surface anodizing.
In step 330, the surface anodized layer is removed from the exposed surface 110 using standard machining techniques. In this step or a separate step, it is also possible to machine additional non-exposed surfaces (for example, the inner surface of the additional flange and the mating surface of the inner receiving surface of the plurality of fastener receivers). These non-exposed surfaces can be machined to provide better mechanical or electrical contact between these parts and the mating parts.
In step 340, a protective layer 150 is formed on the exposed surface 110. A (thermal) spraying technique can be used to form a protective layer containing, for example, lithium oxide. The spraying technique is well known to those skilled in the field of ceramic spraying. In an alternative embodiment, a guarantee is formed
03822376.7 The step of the first protective layer can also include polishing (or finishing) the thermal spray coating. For example, polishing the thermal spray coating may include applying sandpaper to the sprayed surface.
Fig. 7 shows a method of producing the bellows cover in the plasma processing system shown in Fig. 1 according to another embodiment of the present invention. The flowchart 400 begins with step 410 of making the bellows cover 54 (described above). The step of manufacturing the bellows cover may include at least one of machining, casting, polishing, forging, and polishing. For example, each of the above-mentioned components can be machined by using traditional techniques including guns, carts, etc. in accordance with the instructions listed on the mechanical drawing. Techniques for machining parts using, for example, guns or cars are well known to those of ordinary skill in the machining field. The bellows cover 54 may be made of aluminum, for example.
In step 420, the exposed surface 110 is masked to prevent the formation of a surface anodized layer thereon. In this step or a separate step, additional non-exposed surfaces (such as the inner surface of the additional flange and the inner receiving surface of the plurality of fastener receivers) may be masked. These non-exposed surfaces can be masked to provide better mechanical or electrical contact between these parts and the mating parts. The techniques of surface masking and demasking are well known to those of ordinary skill in the field of surface coating and surface anodization.
In step 430, the bellows cover is anodized to form a surface anodized layer on the remaining unmasked surface. For example, when the bellows cover is made of aluminum, the surface anodized layer may include aluminum oxide (AI2O3). The method of anodizing aluminum parts is well known to those of ordinary skill in the field of surface anodizing.
In step 440, a protective layer 150 is formed on the exposed surface 110. The (thermal) spraying technique can be used to form a protective layer containing, for example, oxide collars. The spraying technique is well known to those skilled in the field of ceramic spraying. In an alternative embodiment, the step of forming the protective layer may further include polishing (or finishing) the thermal sprayed layer. For example, polishing the thermal spray coating may include applying sandpaper to the sprayed surface.
FIG. 8 shows a method of producing the electrode plate in the plasma processing system shown in FIG. 1 according to another embodiment of the present invention. The flowchart 500 begins with step 510 of making the bellows cover 54 (described above). The step of manufacturing the electrode plate may include at least one of machining, casting, polishing, forging, and polishing. For example, each of the above-mentioned components can be machined by using traditional techniques including guns, cars, etc. in accordance with the instructions listed on the mechanical drawing. Use for example
03822376.7 The technology of machining parts from the first gun or turning machine is well known to those of ordinary skill in the field of machining. The electrode plate may be made of aluminum, for example.
In step 520, a protective layer is formed on the exposed surface 110 of the electrode plate. The (thermal) spraying technique can be used to form a protective layer containing, for example, oxide collars. The spraying technique is well known to those skilled in the field of ceramic spraying. In an alternative embodiment, the step of forming the protective layer may further include polishing (or finishing) the thermal sprayed layer. For example, polishing the thermal spray coating may include applying sandpaper to the sprayed surface.
The process of forming the protective layer 150 on the exposed surface 110 shown with reference to FIGS. 6-8 can be modified to utilize a combination of machining and masking. In this improved process, at least one exposed surface 110 is masked to prevent the formation of an anodized layer thereon while anodizing the other exposed surfaces 110. The unmasked exposed surface 110 is then machined, and the masked exposed surface is unmasked. Then, a protective layer 150 may be formed on all exposed surfaces 110. As described above, during the method of forming an anodic oxide layer thereon, it is also possible to machine an additional surface that is not an exposed surface (for example, to provide better mechanical or electrical contact).
Although only a few exemplary embodiments of the present invention have been described in detail above, those of ordinary skill in the art can easily understand that various exemplary embodiments can be implemented without essentially departing from the novel teachings and advantages of the present invention. modify. In addition, all these modifications are intended to be included in the scope of the present invention.
03822376.7
8 sheets
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Every citation, both ways
| Document | Relation | Office | Cited during |
|---|---|---|---|
| US20010003271A1 | Cites | United States of America | Search report |
| EP1081749A1 | Cites | European Patent Office (EPO) | Search report |
| US6264788B! | Cites | United States of America | Search report |
| US6123804A | Cites | United States of America | Search report |
| US6106625A | Cites | United States of America | Search report |
| JP2000124197A | Cites | Japan | Search report |
14 members in 6 offices
Priority claims2
| Document | Office | Kind | Date |
|---|---|---|---|
| 10259306 | United States of America | – | |
| 25930602 | United States of America | A |
Members14
| Document | Office | Kind | |
|---|---|---|---|
| US2004060656A1 | United States of America | A1 | |
| WO2004030012A2 | World Intellectual Property Organization (WIPO) | A2 | |
| AU2003269394A1 | Australia | A1 | |
| AU2003269394A8 | Australia | A8 | |
| WO2004030012A3 | World Intellectual Property Organization (WIPO) | A3 | |
| KR20050053712A | Republic of Korea | A | |
| CN1682345A | China | A | |
| JP2006501646A | Japan | A | |
| KR100699636B1 | Republic of Korea | B1 | |
| US7204912B2 | United States of America | B2 | |
| US2007125494A1 | United States of America | A1 | |
| CN100508103CThis record | China | C | |
| US7678226B2 | United States of America | B2 | |
| JP4627659B2 | Japan | B2 |
4 legal events, as the office reported them to INPADOC
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| Termination of patent right due to non-payment of annual feeCF01 | CF01 | |
| Grant of patent or utility modelGrantedC14 | C14 | |
| Entry into substantive examinationC10 | C10 | |
| PublicationC06 | C06 |
Numbers
- Publication
- 100508103
- Application
- 38223767
Titles2
- Chinese
- 用于等离子体加工系统中的改进的波纹管罩的方法和装置
- English
- Method and apparatus for an improved bellows cover in a plasma processing system
Classification
- CPC, 4
- H01J37/32477
- H10P72/0421
- H01J37/20
- H01J37/3488
- IPC, 4
- H01J37 32
- H01J37 00
- H01J37 02
- H10P95 00