CA2859014C

Articles including anticondensation and/or low-e coatings and/or methods of making the same

Abstract

Certain example embodiments of this invention relate to articles including anticondensation and/or low-E coatings that are exposed to an external environment, and/or methods of making the same. In certain example embodiments, the anticondensation and/or low-E coatings may be survivable in an outside environment. The coatings also may have a sufficiently low sheet resistance and hemispherical emissivity such that the glass surface is more likely to retain heat from the interior area, thereby reducing (and sometimes completely eliminating) the presence condensation thereon. The articles of certain example embodiments may be, for example, skylights, vehicle windows or windshields, IG units, VIG units, refrigerator/freezer doors, and/or the like.

CA2859014C, drawing sheet 1
Sheet 1 of 5

Term

6.2 yearsleft in the term

Expires 13 December 2032.

  1. Priority
  2. Filed
  3. Granted
  4. Today
  5. Expires

21 claims: 16 independent, 5 dependent

  1. 1
    Claims 1. An insulating glass (1G) unit, comprising:first and second substantially parallel spaced apart glass substrates, the first and second substrates providing, in order, first through fourth substantially parallel major surfaces of the IG unit, a gap being defined between the first and second substrates;wherein the fourth major surface of the IG unit supports a first low-E coating comprising a plurality of thin film layers including, in order moving away from the second substrate: a first layer comprising silicon oxynitride having an index of refraction of 1.5-2.1 and being 50-90 nm thick, a layer comprising ITO having an index of refraction of 1.7-2.1 and being 85-125 nm thick, and a second layer comprising silicon oxynitride having an index of refraction of 1.52.1 and being 50-90 nm thick;wherein the third major surface of the IG unit supports a second low-E coating comprising a plurality of thin film layers including, in order moving away from the second substrate: a first silicon-based layer;a first dielectric layer;a second dielectric layer split by a third dielectric layer so as to form first and second portions of the second dielectric layer;a metallic or substantially metallic infrared (IR) reflecting layer over and directly contacting the second portion of the second dielectric layer;an upper contact layer comprising an oxide of Ni and/or Cr directly over and contacting the IR reflecting layer;a fourth dielectric layer;and a second silicon-based layer, wherein the third dielectric layer comprises either titanium oxide or tin oxide.
  2. 5
    The IG unit according to any one of claims 1-4, wherein the first and second layers comprising silicon oxynitride have indices of refraction and thicknesses that vary from one another by no more than 0.1 and 10 nm, respectively.
  3. 6
    6 The IG unit according to any one of claims 1-5, wherein the first dielectric layer is a high refractive index layer comprising an oxide or sub-oxide of titanium.
  4. 7
    The TG unit according to any one of claims 1 -6, wherein the third and fourth dielectric layers comprise tin oxide.
  5. 8
    The IG unit according to any one of claims 1-7, wherein the second dielectric layer comprises zinc oxide.
  6. 9
    9 The IG unit according to any one of claims 1-8, wherein the second dielectric layer is split such that the portions thereof have thicknesses that vary by no more than 5% of one another.
  7. 10
    The IG unit according to any one of claims 1-9, wherein the first and second silicon-based layers each comprise silicon nitride, the first dielectric layer comprises titanium oxide, the second dielectric layer comprises zinc oxide, the third and fourth dielectric layers each comprise tin oxide, and the IR reflecting layer comprises Ag.
  8. 11
    The IG unit according to any one of claims 1-10, wherein the second substrate is heat treated with the first and/or second low-E coatings disposed thereon. 35 19578872v2 PAGE 4/9 · RCVD AT 8/13/2019 5:58:37 PM [Eastern Daylight Ttoe[ · SVR:OTT235QFAX01/22 * DNIS:3905 · CSID:MLT ’ ANI:8582003900 · DURATION (mm-ss):02-55 CA 2859014 2019-08-13 08/13/2019 03:57 PM Page:
  9. 12
    The IG unit according to any one of claims 1-11, wherein the second low-E coating has a SHGC sufficient to bring the U-value of the IG unit to less than or equal to 0.30.
  10. 13
    A coated article comprising a substrate supporting first and second low-E coatings on opposing major surfaces thereof, respectively, wherein:the first low-E coating comprises, in order moving away from the substrate: a first layer comprising silicon oxynitride having an index of refraction of 1.5-2.1 and being 50-90 nm thick, a layer comprising ITO having an index of refraction of 1.7-2.1 and being 85-125 nm thick, and a second layer comprising silicon oxynitride having an index of refraction of 1.52.1 and being 50-90 nm thick, and the second low-E coating comprises, in order moving away from the substrate: a first silicon-based layer, a first dielectric layer, a second dielectric layer split by a third dielectric layer so as to form first and second portions of the second dielectric layer, the third dielectric layer comprising either titanium oxide or tin oxide, a metallic or substantially metallic infrared (IR) reflecting layer over and directly contacting the second portion of the second dielectric layer, an upper contact layer comprising an oxide of Ni and/or Cr directly over and contacting the IR reflecting layer, a fourth dielectric layer, and a second silicon-based layer. 1957SJ72v2 PACE 6/9 · RCVD AT 8/13/2019 5:58:37 PM /Eastern Daylight Time/ · SVR:OTT235QFAX01/22 * DNIS:3905 · CSC:MLT · AM:8582003000 · DURATION (mm-ss):02-55 CA 2859014 2019-08-13
  11. 14
    A method of making an insulating glass unit (IGU), the method comprising:providing a first glass substrate;disposing a first low-E coating, directly or indirectly, on a first major surface of the first glass substrate, the first low-E coating comprising a plurality of thin film layers including, in order moving away from the first glass substrate: a first layer comprising silicon oxynitride, a layer comprising ITO, and a second layer comprising silicon oxynitride;and providing a second glass substrate in substantially parallel, spaced apart relation to the first glass substrate such that the first major surface of the first glass substrate faces away from the second glass substrate, wherein the first substrate with only the first low-E coating thereon has a hemispherical emissivity of less than or equal to 0.20 and a sheet resistance less than or equal to 20 ohms/square following heat treatment, and disposing a second low-E coating, directly or indirectly, on a second major surface of the first glass substrate opposite to the first major surface of the first glass substrate, the second lowE coating comprising a plurality of thin film layers including, in order moving away from the first glass substrate: a first silicon-based layer;a first dielectric layer;a second dielectric layer split by a third dielectric layer so as to form first and second portions of the second dielectric layer, the third dielectric layer comprising either titanium oxide or tin oxide;a metallic or substantially metallic infrared (IR) reflecting layer over and directly contacting the second portion of the second dielectric layer;an upper contact layer comprising an oxide of Ni and/or Cr directly over and contacting the IR reflecting layer;a fourth dielectric layer, and a second silicon-based layer. CA 2859014 2020-03-27 08/13/2019 03:57 PM Page:
  12. 17
    The method according to any one of claims 14-16, wherein the second dielectric layer comprises zinc oxide.
  13. 18
    The method according to any one of claims 14-17, wherein the second dielectric layer is split such that the portions thereof have thicknesses that vary by no more than 5% of one another.
  14. 19
    The method according to any one of claims 14-18, wherein the first and second silicon-based layers each comprise silicon nitride, the first dielectric layer comprises titanium oxide, the second dielectric layer comprises zinc oxide, the third and fourth dielectric layers each comprise tin oxide, and the IR reflecting layer comprises Ag.
  15. 20
    The method according to any one of claims 14-19, wherein the first substrate is heat treated with the first and/or second low-E coatings disposed thereon.
  16. 21
    The method according to any one of claims 14-20, wherein the second low-E coating has a SHGC sufficient to bring the U-value of the IG unit to less than or equal to 0.30.