Nova Patents
ATE534079T1

Solid state memory utilizing analog communication of data values

Abstract

Memory devices and bulk storage devices configured to program a memory cell to a target threshold voltage representing a data pattern of more than one bit and read the data pattern of more than one bit of the memory cell in a single read operation by generating a signal that is representative of an actual threshold voltage of the memory cell.

Term

1.7 yearsto projected expiry

Projected expiry 5 June 2028, counted from filing; an application has no term until it is granted.

  1. Priority
  2. Filed
  3. Published
  4. Today
  5. Projected expiry

23 members in 8 offices

This recordMember, by publication datePriority claim

Priority claims2

Priority claims
DocumentOfficeKindDate
75830707United States of AmericaA
2008065846United States of AmericaW

Members23

Family members, oldest first
DocumentOfficeKind
US2008304317A1United States of AmericaA1
WO2008151262A2World Intellectual Property Organization (WIPO)A2
WO2008151262A3World Intellectual Property Organization (WIPO)A3
TW200912653ATaiwan Province of ChinaA
EP2156304A2European Patent Office (EPO)A2
KR20100028091ARepublic of KoreaA
CN101681321AChinaA
US7719901B2United States of AmericaB2
EP2156304A4European Patent Office (EPO)A4
JP2010529586AJapanA
US2010226175A1United States of AmericaA1
EP2156304B1European Patent Office (EPO)B1
US8064266B2United States of AmericaB2
AT534079TAustriaT
ATE534079T1This recordAustriaT1
US2012063225A1United States of AmericaA1
KR101120248B1Republic of KoreaB1
TWI370970BTaiwan Province of ChinaB
CN101681321BChinaB
US8411511B2United States of AmericaB2
US2013223145A1United States of AmericaA1
JP2013175276AJapanA
US8811092B2United States of AmericaB2