ATE475181T1

A configurable MVRAM and method of configuration

Abstract

A configurable MRAM device is achieved. The device comprises a memory array of magnetic memory cells. A first part of the array comprises the memory cells that can be accessed for reading and writing during normal operation. A second part of the array comprises the memory cells that can be read only during a power up initialization. The second part of the array is used to store configuration data for altering the physical operation of the memory array. Programmable current sources and timing delays use the stored configuration data to optimize device performance. A redundant section of memory cells is activated by the configuration data.

Term

Projected expiry 20 December 2026.

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31301905United States of AmericaA

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US2007140033A1United States of AmericaA1
EP1801810A1European Patent Office (EPO)A1
JP2007172819AJapanA
US7362644B2United States of AmericaB2
EP1801810B1European Patent Office (EPO)B1
AT475181TAustriaT
ATE475181T1This recordAustriaT1
DE602006015596D1GermanyD1
JP5357387B2JapanB2