ATE448569T1
Copper indium diselenide-based photovoltaic device and method of preparing the same
Abstract
This record has no abstract on file.
Term
0.6 yearsto projected expiry
Projected expiry 18 April 2027, counted from filing; an application has no term until it is granted.
- Priority
- Filed
- Published
- Today
- Projected expiry
42 members in 9 offices
Priority claims3
| Document | Office | Kind | Date |
|---|---|---|---|
| 79277006 | United States of America | P | |
| 79285206 | United States of America | P | |
| 2007009359 | United States of America | W |
Members42
| Document | Office | Kind | |
|---|---|---|---|
| WO2007123898A1 | World Intellectual Property Organization (WIPO) | A1 | |
| WO2007123901A1 | World Intellectual Property Organization (WIPO) | A1 | |
| WO2007123926A2 | World Intellectual Property Organization (WIPO) | A2 | |
| WO2007123926A3 | World Intellectual Property Organization (WIPO) | A3 | |
| US2008115827A1 | United States of America | A1 | |
| WO2008088570A1 | World Intellectual Property Organization (WIPO) | A1 | |
| KR20090003334A | Republic of Korea | A | |
| KR20090004986A | Republic of Korea | A | |
| KR20090005184A | Republic of Korea | A | |
| EP2016625A1 | European Patent Office (EPO) | A1 | |
| EP2018669A1 | European Patent Office (EPO) | A1 | |
| EP2021175A2 | European Patent Office (EPO) | A2 | |
| US2009084427A1 | United States of America | A1 | |
| US2009084428A1 | United States of America | A1 | |
| CN101421100A | China | A | |
| CN101473447A | China | A | |
| CN101473448A | China | A | |
| EP2016625B1 | European Patent Office (EPO) | B1 | |
| AT441942T | Austria | T | |
| ATE441942T1 | Austria | T1 | |
| JP2009534221A | Japan | A | |
| JP2009534839A | Japan | A | |
| JP2009534841A | Japan | A | |
| DE602007002297D1 | Germany | D1 | |
| EP2018669B1 | European Patent Office (EPO) | B1 | |
| AT448569T | Austria | T | |
| ATE448569T1This record | Austria | T1 | |
| ES2328873T3 | Spain | T3 | |
| DE602007003216D1 | Germany | D1 | |
| US2010035046A1 | United States of America | A1 | |
| ES2335551T3 | Spain | T3 | |
| CN101473448B | China | B | |
| JP2011171775A | Japan | A | |
| JP2012069965A | Japan | A | |
| CN101473447B | China | B | |
| JP4933610B2 | Japan | B2 | |
| US8207442B2 | United States of America | B2 | |
| CN102646724A | China | A | |
| US8304085B2 | United States of America | B2 | |
| JP5149275B2 | Japan | B2 | |
| CN101421100B | China | B | |
| KR101380006B1 | Republic of Korea | B1 |
1 legal event, as the office reported them to INPADOC
Events
| Event | Code | |
|---|---|---|
| Ceased as to paragraph 5 lit. 3 law introducing patent treatiesCeasedRER | RER |
Numbers
- Application
- 7755584
Titles2
- German
- FOTOVOLTAISCHE ANORDNUNG AUF KUPFER-INDIUM- DISELENIDBASIS UND HERSTELLUNGSVERFAHREN DAFÜR
- English
- COPPER-INDIUM-DISELENIDE-BASED PHOTOVOLTAIC DEVICE AND PRODUCTION METHOD THEREFOR
Classification
- CPC, 9
- C08L83/04
- H10F77/126
- C08G77/12
- C08G77/16
- C08G77/20
- Y02E10/541
- H10F10/16
- H10F10/167
- H10F77/12
- IPC, 1
- H01L31 072