Nova Patents
ATE429036T1

Method of manufacturing a thin-film transistor

Abstract

This record has no abstract on file.

Term

Term ended

Projected expiry passed 25 May 2021, 5.3 years ago.

  1. Priority
  2. Filed
  3. Published
  4. Projected expiry
  5. Today

14 members in 8 offices

This recordMember, by publication datePriority claim

Priority claims2

Priority claims
DocumentOfficeKindDate
2000188727JapanA
0104402JapanW

Members14

Family members, oldest first
DocumentOfficeKind
WO0199199A1World Intellectual Property Organization (WIPO)A1
JP2002009295AJapanA
KR20030028489ARepublic of KoreaA
EP1304746A1European Patent Office (EPO)A1
US2003096462A1United States of AmericaA1
KR100517037B1Republic of KoreaB1
EP1304746A4European Patent Office (EPO)A4
US7052944B2United States of AmericaB2
TWI283069BTaiwan Province of ChinaB
EP1304746B1European Patent Office (EPO)B1
AT429036TAustriaT
ATE429036T1This recordAustriaT1
DE60138387D1GermanyD1
JP4389359B2JapanB2