ATE404497T1

Gas-phase nucleation and growth of single-wall carbon nanotubes from high pressure carbon monoxide

Abstract

The present invention discloses the process of supplying high pressure (e.g., 30 atmospheres) CO that has been preheated (e.g., to about 1000° C.) and a catalyst precursor gas (e.g., Fe(CO)<SUB>5</SUB>) in CO that is kept below the catalyst precursor decomposition temperature to a mixing zone. In this mixing zone, the catalyst precursor is rapidly heated to a temperature that results in (1) precursor decomposition, (2) formation of active catalyst metal atom clusters of the appropriate size, and (3) favorable growth of SWNTs on the catalyst clusters. Preferably a catalyst cluster nucleation agency is employed to enable rapid reaction of the catalyst precursor gas to form many small, active catalyst particles instead of a few large, inactive ones. Such nucleation agencies can include auxiliary metal precursors that cluster more rapidly than the primary catalyst, or through provision of additional energy inputs (e.g., from a pulsed or CW laser) directed precisely at the region where cluster formation is desired. Under these conditions SWNTs nucleate and grow according to the Boudouard reaction. The SWNTs thus formed may be recovered directly or passed through a growth and annealing zone maintained at an elevated temperature (e.g., 1000° C.) in which tubes may continue to grow and coalesce into ropes.

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Projected expiry passed 3 November 2019, 6.9 years ago.

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18 members in 10 offices

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DocumentOfficeKindDate
10691798United States of AmericaP
11458898United States of AmericaP
11728799United States of AmericaP
16172899United States of AmericaP

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CA2350099A1CanadaA1
WO0026138A1World Intellectual Property Organization (WIPO)A1
AU1603300AAustraliaA
KR20010080933ARepublic of KoreaA
EP1137593A1European Patent Office (EPO)A1
CN1373736AChinaA
JP2004517789AJapanA
US6761870B1United States of AmericaB1
US2004223901A1United States of AmericaA1
KR100688138B1Republic of KoreaB1
US7204970B2United States of AmericaB2
CN100340476CChinaC
CA2350099CCanadaC
EP1137593B1European Patent Office (EPO)B1
AT404497TAustriaT
ATE404497T1This recordAustriaT1
DE69939329D1GermanyD1
JP4619539B2JapanB2