Nova Patents
ATE282903T1

On chip current source

Abstract

Current source comprising a MOS transistor (T1) having a first terminal (D) connected to a high voltage input (HV), a second terminal (S) providing an output current (Iout) to a current output terminal (Q), and a gate, the current source further including a bias unit (T2) connected to the high voltage input (HV) for generating a small bias current for the gate (G), the gate (G) further being connected to an output (Q1) of a voltage comparator (A1) for comparing a sensed voltage (Vsense) caused by the output current (Iout) over a voltage sensor means (Rsense) with a reference voltage and providing at said comparator output (Q1) a regulation voltage for the gate (G) based on the difference between the sensed voltage and the reference voltage, wherein the bias unit (T2) includes a transistor (T2) having a gate electrode (g) which is coupled to one of the nodes of the voltage sensor (Rsense).

Term

Term ended

Projected expiry passed 30 March 2021, 5.5 years ago.

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12 members in 7 offices

This recordMember, by publication datePriority claim

Priority claims2

Priority claims
DocumentOfficeKindDate
00201283European Patent Office (EPO)A
0103646European Patent Office (EPO)W

Members12

Family members, oldest first
DocumentOfficeKind
WO0178222A1World Intellectual Property Organization (WIPO)A1
US2001048296A1United States of AmericaA1
KR20020023230ARepublic of KoreaA
US6504352B2United States of AmericaB2
EP1275195A1European Patent Office (EPO)A1
JP2003530645AJapanA
EP1275195B1European Patent Office (EPO)B1
AT282903TAustriaT
ATE282903T1This recordAustriaT1
DE60107228D1GermanyD1
DE60107228T2GermanyT2
KR100791654B1Republic of KoreaB1