Electronic component comprising a p-doped organic semiconductor

The present invention relates to an electronic component comprising an organic semiconductor material layer is dispersed in the dopant, the energy of the HOMO energy level between the output and the dopant in the organic semiconductor material is less than 0.5 eV difference. Dopant 10-8The atomic element having an evaporation temperature less than 1300 & lt; 0 & gt; C at a pressure of Torr (atomic element). The present invention removes any toxicity problems associated with conventional organic acceptor dopants and, in particular, applied to the organic light emitting diode.The organic light emitting diode, a dopant, an organic semiconductor material layer, toxic