Deep sub-micron MOS preamplifier with thick-oxide input stage transistor

The invention relates to a capacitive microphone device, comprising: Capacitive microphone sensor, comprising two adjacent) resonator and back plate part, and back plate element with air gap between resonator element. In addition, the device further comprises a deep submicron MOS integrated - circuit are, comprising preamplifier; the preamplifier a receiving a capacitive microphone sensor generate electric signal first signal input terminal. The first signal input terminal is in operation coupled to Pre-amplifier's input stage; the input stage a plasma oxide semiconductor. The invention farther relates to a deep submicron MOS integrated - circuit are, comprising a plasma oxide semiconductor to a preamplifier.