Nova Patents
AT545156T

Single-electron transistors and fabrication methods in which a projecting feature defines spacing between electrodes

Abstract

This record has no abstract on file.

Term

Term ended

Expired 12 July 2022, 4.2 years ago.

  1. Priority
  2. Filed
  3. Granted
  4. Expired
  5. Today

13 members in 6 offices

This recordMember, by publication datePriority claim

Priority claims8

Priority claims
DocumentOfficeKindDate
90547101United States of AmericaA
90547101United States of AmericaA
0222260United States of AmericaW
0222260United States of AmericaW
905471–––
0222260–––
US20010905471–––
WO2002US22260–––

Members13

Family members, oldest first
DocumentOfficeKind
US2003012930A1United States of AmericaA1
WO03007385A1World Intellectual Property Organization (WIPO)A1
TW558740BTaiwan Province of ChinaB
US6653653B2United States of AmericaB2
EP1407493A1European Patent Office (EPO)A1
US2004113144A1United States of AmericaA1
JP2004535677AJapanA
US2005230713A1United States of AmericaA1
US7208784B2United States of AmericaB2
JP4343683B2JapanB2
EP1407493B1European Patent Office (EPO)B1
AT545156TThis recordAustriaT
ATE545156T1AustriaT1