Process for producing thin films and devices

The present invention offers the silicon nitride thin film formation equipment for the substrate which is standing still or moving, and the method for forming such a thin film. The method concerning the present invention raises the deposition speed of a thin film while improving the homogeneity of the thickness of a thin film, and the physical properties of a thin film. The physical properties of the thin film are suitable for the application as the antireflection layer in a solar cell device, a protection layer, or a dielectric layer in a thin film transistor. The equipment concerning the present invention is equipped with many metal filaments. In the space part in thin film formation equipment, on the basis of the filament, the distance beforehand set to the filament at the side opposite to is separated, and the gas feed system is 配設 (ed) with the substrate. The thin film formation equipment for a stationary substrate is equipped with the shutter for controlling the thickness of a thin film while it controls the start condition and terminating condition for thin film formation.