SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH ELECTRODE FOR N-POLAR InGaAlN SURFACE

The invention claims a comprises A Zhenie the ohmic electrode and indium gallium aluminium nitrogen semiconductor light-emitting element and manufacturing method thereof. The indium gallium aluminium nitrogen semiconductor light-emitting element of the present invention includes: The conductive substrate, the isolating p TYPE ohmic electrode and conductive substrate, the isolating TYPE indium gallium aluminium nitrogen (InxGayAl1-x-yN, 0≤x≤1,0≤y≤1) is p type ohmic electrode, a double-layer the indium gallium aluminium nitrogen light-emitting layer is P indium gallium aluminium nitrogen, The isolating Yinjia N indium gallium aluminium nitrogen layer is an aluminium nitrogen light-emitting layer, a double-layer the n type ohmic electrode and N-TYPE indium gallium aluminium nitrogen layer, wherein a: The N indium gallium aluminium nitrogen layer outer surface is a nitrogen polar surface; the n type ohmic electrode comprises at least) is made of metal nickel germanium contact layer of metal, germanium and nickel three metal ingredients formed. The light-emitting element is a nitrogen polar surface indium gallium aluminium nitrogen layer, and good ohmic contact and very with forward working voltage.