Bilayer hdp cvd / pe cvd cap in advanced beol interconnect structures and method thereof

Claimed is a rear end piece (BEOL) metallization structure improved. The structure comprises a double-layer diffusion barrier cap or layer, is HDP (CVD) process deposition's dielectric materials form a first cap layer and high-density plasma chemical vapor phase deposition (116,123), and is PE (CVD) process deposition's dielectric materials form the second cap layer and plasma enhanced chemical vapor phase deposition (117,124). Is claimed is for forming BEOL metallization structure and method. The invention special for comprising a dielectric layer (ILD) Low-k medium material and copper interconnection structure for conductor.