Manufacturing method for SSOI substrate

The invention claims a low temperature heat processing the separated base plate forming a ssoi substrate ssoi substrate manufacturing method the method comprises: The base plate is provided on said base plate is set on the surface of forming sige layer on said sige layer on the surface of which has less than sige crystal lattice parameter of si so as to form the deformation of the silicon layer and to the deformation of the silicon layer injecting ion in said sige layer to generate in the process of adding and it is not purified substance so as to reach injecting the ions in the depth is. So it can be made on the surface of the fine roughness good of the base plate by the injection ion and impurity from the mutual effect under low temperature but also can be separated is connected with the base plate and it saves manufacturing cost and it is easy to be formed structure of the device.