A semiconductor materials inspection system
Abstract
The high light source by such as and LED light emitting diode or VCSEL a conducting light source on the dense substrate is a micro-array, a to obtain at least 50 milliwatts/square lower power output density. The semiconductor usually device and substrate is the electric heat conducting is a clutch in energy, and a power source drive of a liquid is controlled. The optical element is placed on the micro-array, to obtain improved direct property and part of the output beam; and/or spectrum purity. The illumination module of in such a fluorescent, the detection, and measuring, photopolymerization, ionization, antiseptic, residuum elimination, and a collecting) and are processed.
Term
Term ended
Expired 8 May 2023, 3.4 years ago.
- Priority
- Filed
- Granted
- Expired
- Today
42 members in 10 offices
Priority claims2
| Document | Office | Kind | Date |
|---|---|---|---|
| 37901902 | United States of America | P | |
| 0314625 | United States of America | W |
Members42
| Document | Office | Kind | |
|---|---|---|---|
| AU2003235489A1 | Australia | A1 | |
| AU2003235489A8 | Australia | A8 | |
| WO03096387A2 | World Intellectual Property Organization (WIPO) | A2 | |
| WO03096387A3 | World Intellectual Property Organization (WIPO) | A3 | |
| TW200402151A | Taiwan Province of China | A | |
| EP1508157A2 | European Patent Office (EPO) | A2 | |
| TWI229946B | Taiwan Province of China | B | |
| KR20050044865A | Republic of Korea | A | |
| US2005152146A1 | United States of America | A1 | |
| CN1653297A | China | A | |
| JP2005524989A | Japan | A | |
| WO2006072071A2 | World Intellectual Property Organization (WIPO) | A2 | |
| KR20070102690A | Republic of Korea | A | |
| US2007278504A1 | United States of America | A1 | |
| EP1866954A2 | European Patent Office (EPO) | A2 | |
| EP1508157A4 | European Patent Office (EPO) | A4 | |
| JP2008535679A | Japan | A | |
| US7461949B2 | United States of America | B2 | |
| EP2009676A2 | European Patent Office (EPO) | A2 | |
| US2009085046A1 | United States of America | A1 | |
| WO2006072071A3 | World Intellectual Property Organization (WIPO) | A3 | |
| US2009233003A1 | United States of America | A1 | |
| US7684665B2 | United States of America | B2 | |
| CN1653297B | China | B | |
| EP2009676A3 | European Patent Office (EPO) | A3 | |
| EP1866954A4 | European Patent Office (EPO) | A4 | |
| JP4800324B2 | Japan | B2 | |
| EP1508157B1 | European Patent Office (EPO) | B1 | |
| AT535009TThis record | Austria | T | |
| ATE535009T1 | Austria | T1 | |
| ES2378067T3 | Spain | T3 | |
| US8192053B2 | United States of America | B2 | |
| EP2009676B1 | European Patent Office (EPO) | B1 | |
| US2012281408A1 | United States of America | A1 | |
| EP2009676B8 | European Patent Office (EPO) | B8 | |
| US2013034663A9 | United States of America | A9 | |
| KR101288758B1 | Republic of Korea | B1 | |
| US8496356B2 | United States of America | B2 | |
| US2013302209A1 | United States of America | A1 | |
| US9281001B2 | United States of America | B2 | |
| EP1866954B1 | European Patent Office (EPO) | B1 | |
| US10401012B2 | United States of America | B2 |
Numbers
- Application
- 3724539
Titles2
- German
- HOCHEFFIZIENTE HALBLEITER-LICHTQUELLE SOWIE VERFAHREN ZU DEREN VERWENDUNG UND HERSTELLUNG
- English
- HIGHLY EFFICIENT SEMICONDUCTOR LIGHT SOURCE AND METHOD FOR THEIR USE AND MANUFACTURE
Classification
- CPC, 21
- H05B47/10
- A61L2/10
- A61L2/26
- A61L9/20
- A61L2202/14
- A61L2202/17
- F21K9/00
- G01N21/8806
- G03F7/7005
- H01L25/0753
- H01L33/64
- H01L2924/0002
- H05B47/165
- A61L2/0047
- B41F23/0409
- B41F23/0453
- C02F1/325
- F21V29/00
- F21V29/56
- F21V29/57
- F21V29/673
- IPC, 15
- A61L2 10
- A61L2 26
- A61L9 20
- F21K99 00
- G01N21 88
- G03F7 20
- H01L21 00
- H01L25 075
- H01L25 16
- H01L27 15
- H01L31 12
- H01L33 00
- H01L33 64
- H01S5 022
- H01S5 40